JP4573921B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP4573921B2
JP4573921B2 JP01266499A JP1266499A JP4573921B2 JP 4573921 B2 JP4573921 B2 JP 4573921B2 JP 01266499 A JP01266499 A JP 01266499A JP 1266499 A JP1266499 A JP 1266499A JP 4573921 B2 JP4573921 B2 JP 4573921B2
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Japan
Prior art keywords
film
nitrogen
catalyst
oxide film
annealing
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JP01266499A
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Japanese (ja)
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JP2000216165A (ja
JP2000216165A5 (enExample
Inventor
豪一 佐藤
亮 和泉
英樹 松村
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Fujitsu Semiconductor Ltd
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Fujitsu Semiconductor Ltd
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  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP01266499A 1999-01-21 1999-01-21 半導体装置の製造方法 Expired - Fee Related JP4573921B2 (ja)

Priority Applications (1)

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JP01266499A JP4573921B2 (ja) 1999-01-21 1999-01-21 半導体装置の製造方法

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Application Number Priority Date Filing Date Title
JP01266499A JP4573921B2 (ja) 1999-01-21 1999-01-21 半導体装置の製造方法

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JP2000216165A JP2000216165A (ja) 2000-08-04
JP2000216165A5 JP2000216165A5 (enExample) 2006-03-02
JP4573921B2 true JP4573921B2 (ja) 2010-11-04

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JP01266499A Expired - Fee Related JP4573921B2 (ja) 1999-01-21 1999-01-21 半導体装置の製造方法

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Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4599734B2 (ja) * 2001-03-14 2010-12-15 ソニー株式会社 多結晶性半導体薄膜の形成方法、及び半導体装置の製造方法
JP4599746B2 (ja) * 2001-04-04 2010-12-15 ソニー株式会社 多結晶性半導体薄膜の形成方法及び半導体装置の製造方法
JP4644964B2 (ja) * 2001-04-04 2011-03-09 ソニー株式会社 多結晶性半導体薄膜の形成方法、及び半導体装置の製造方法
WO2003005435A1 (en) * 2001-07-05 2003-01-16 Tokyo Electron Limited Substrate treating device and substrate treating method, substrate flattening method
KR100482758B1 (ko) * 2002-12-12 2005-04-14 주식회사 하이닉스반도체 반도체 소자의 제조 방법
JP2005277253A (ja) * 2004-03-26 2005-10-06 National Institute Of Advanced Industrial & Technology 半導体装置の作製方法及び水素処理装置
TW200603287A (en) * 2004-03-26 2006-01-16 Ulvac Inc Unit layer posttreating catalytic chemical vapor deposition apparatus and method of film formation therewith
JP2006196713A (ja) * 2005-01-13 2006-07-27 National Institute Of Advanced Industrial & Technology 半導体装置及びその作製方法並びに重水素処理装置
JP2012186490A (ja) * 2012-05-07 2012-09-27 National Institute Of Advanced Industrial & Technology 半導体装置及び半導体基板の重水素処理装置
US20140034632A1 (en) * 2012-08-01 2014-02-06 Heng Pan Apparatus and method for selective oxidation at lower temperature using remote plasma source

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3874815B2 (ja) * 1994-08-31 2007-01-31 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3737221B2 (ja) * 1996-09-06 2006-01-18 英樹 松村 薄膜作成方法及び薄膜作成装置
JPH11340225A (ja) * 1998-05-27 1999-12-10 Sony Corp 絶縁膜の形成方法及びｐ形半導体素子の製造方法
JP4299393B2 (ja) * 1999-01-20 2009-07-22 富士通マイクロエレクトロニクス株式会社 半導体装置の製造方法

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