JP2000138357A5 - - Google Patents
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- Publication number
- JP2000138357A5 JP2000138357A5 JP1998309725A JP30972598A JP2000138357A5 JP 2000138357 A5 JP2000138357 A5 JP 2000138357A5 JP 1998309725 A JP1998309725 A JP 1998309725A JP 30972598 A JP30972598 A JP 30972598A JP 2000138357 A5 JP2000138357 A5 JP 2000138357A5
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- forming
- wiring
- etching
- hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005530 etching Methods 0.000 claims description 55
- 238000000034 method Methods 0.000 claims description 24
- 239000004065 semiconductor Substances 0.000 claims description 21
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- 239000011229 interlayer Substances 0.000 claims description 3
- 239000010410 layer Substances 0.000 claims 31
- 230000015572 biosynthetic process Effects 0.000 claims 7
- 238000005553 drilling Methods 0.000 claims 7
- 239000004020 conductor Substances 0.000 claims 6
- 239000003990 capacitor Substances 0.000 claims 5
- 239000000463 material Substances 0.000 claims 4
- 229910052751 metal Inorganic materials 0.000 claims 4
- 239000002184 metal Substances 0.000 claims 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 4
- 229910052721 tungsten Inorganic materials 0.000 claims 4
- 239000010937 tungsten Substances 0.000 claims 4
- 238000005229 chemical vapour deposition Methods 0.000 claims 2
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 claims 2
- 229910021342 tungsten silicide Inorganic materials 0.000 claims 2
- 230000003796 beauty Effects 0.000 claims 1
- 230000000149 penetrating effect Effects 0.000 claims 1
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30972598A JP3843367B2 (ja) | 1998-10-30 | 1998-10-30 | 半導体集積回路装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30972598A JP3843367B2 (ja) | 1998-10-30 | 1998-10-30 | 半導体集積回路装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2000138357A JP2000138357A (ja) | 2000-05-16 |
| JP2000138357A5 true JP2000138357A5 (enExample) | 2004-11-11 |
| JP3843367B2 JP3843367B2 (ja) | 2006-11-08 |
Family
ID=17996556
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30972598A Expired - Fee Related JP3843367B2 (ja) | 1998-10-30 | 1998-10-30 | 半導体集積回路装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3843367B2 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3166749B2 (ja) | 1999-01-19 | 2001-05-14 | 日本電気株式会社 | 半導体装置およびその製造方法 |
| KR100331568B1 (ko) * | 2000-05-26 | 2002-04-06 | 윤종용 | 반도체 메모리 소자 및 그 제조방법 |
| US6518671B1 (en) * | 2000-10-30 | 2003-02-11 | Samsung Electronics Co. Ltd. | Bit line landing pad and borderless contact on bit line stud with localized etch stop layer and manufacturing method thereof |
| JP2003007854A (ja) * | 2001-06-22 | 2003-01-10 | Nec Corp | 半導体記憶装置及びその製造方法 |
| US10930763B2 (en) | 2018-09-25 | 2021-02-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and device for forming metal gate electrodes for transistors |
| US11875752B2 (en) * | 2020-03-25 | 2024-01-16 | Chengdu Boe Optoelectronics Technology Co., Ltd. | Display panel comprising initialization signal line with protruding portion, display device and manufacture method for the same |
| CN119212384A (zh) * | 2024-10-31 | 2024-12-27 | 长鑫科技集团股份有限公司 | 半导体结构及其制备方法 |
-
1998
- 1998-10-30 JP JP30972598A patent/JP3843367B2/ja not_active Expired - Fee Related
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