JP2000128654A5 - - Google Patents

Download PDF

Info

Publication number
JP2000128654A5
JP2000128654A5 JP1998306497A JP30649798A JP2000128654A5 JP 2000128654 A5 JP2000128654 A5 JP 2000128654A5 JP 1998306497 A JP1998306497 A JP 1998306497A JP 30649798 A JP30649798 A JP 30649798A JP 2000128654 A5 JP2000128654 A5 JP 2000128654A5
Authority
JP
Japan
Prior art keywords
substrate
composite
hei
supplement
thinner
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1998306497A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000128654A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP10306497A priority Critical patent/JP2000128654A/ja
Priority claimed from JP10306497A external-priority patent/JP2000128654A/ja
Priority to EP99949425A priority patent/EP1142849B1/en
Priority to PCT/JP1999/005910 priority patent/WO2000024692A1/ja
Priority to DE69934909T priority patent/DE69934909T2/de
Priority to US09/830,219 priority patent/US6599637B1/en
Publication of JP2000128654A publication Critical patent/JP2000128654A/ja
Publication of JP2000128654A5 publication Critical patent/JP2000128654A5/ja
Pending legal-status Critical Current

Links

JP10306497A 1998-10-28 1998-10-28 窒化ケイ素複合基板 Pending JP2000128654A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP10306497A JP2000128654A (ja) 1998-10-28 1998-10-28 窒化ケイ素複合基板
EP99949425A EP1142849B1 (en) 1998-10-28 1999-10-25 Silicon nitride composite substrate
PCT/JP1999/005910 WO2000024692A1 (fr) 1998-10-28 1999-10-25 Substrat composite au nitrure de silicium
DE69934909T DE69934909T2 (de) 1998-10-28 1999-10-25 Substrat auf der basis eines siliziumnitridkomposits
US09/830,219 US6599637B1 (en) 1998-10-28 1999-10-25 Silicon nitride composite substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10306497A JP2000128654A (ja) 1998-10-28 1998-10-28 窒化ケイ素複合基板

Publications (2)

Publication Number Publication Date
JP2000128654A JP2000128654A (ja) 2000-05-09
JP2000128654A5 true JP2000128654A5 (enExample) 2005-09-08

Family

ID=17957746

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10306497A Pending JP2000128654A (ja) 1998-10-28 1998-10-28 窒化ケイ素複合基板

Country Status (5)

Country Link
US (1) US6599637B1 (enExample)
EP (1) EP1142849B1 (enExample)
JP (1) JP2000128654A (enExample)
DE (1) DE69934909T2 (enExample)
WO (1) WO2000024692A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4571728B2 (ja) * 1999-06-23 2010-10-27 日本碍子株式会社 窒化珪素焼結体及びその製造方法
JP2002029850A (ja) * 2000-07-17 2002-01-29 Denki Kagaku Kogyo Kk 窒化ケイ素焼結体とその製造方法
JP2002029851A (ja) * 2000-07-17 2002-01-29 Denki Kagaku Kogyo Kk 窒化珪素質組成物、それを用いた窒化珪素質焼結体の製造方法と窒化珪素質焼結体
US6958535B2 (en) * 2000-09-22 2005-10-25 Matsushita Electric Industrial Co., Ltd. Thermal conductive substrate and semiconductor module using the same
JP4828696B2 (ja) * 2000-12-27 2011-11-30 株式会社東芝 熱電モジュール用基板およびそれを用いた熱電モジュール
JP4454191B2 (ja) * 2001-07-30 2010-04-21 日本特殊陶業株式会社 セラミックヒータの製造方法
JP4483161B2 (ja) * 2002-08-13 2010-06-16 住友電気工業株式会社 窒化アルミニウム焼結体、メタライズ基板、ヒータ、治具および窒化アルミニウム焼結体の製造方法
JP4869070B2 (ja) 2004-05-20 2012-02-01 株式会社東芝 高熱伝導性窒化ケイ素焼結体及び窒化ケイ素構造部材
JP4756165B2 (ja) * 2004-08-26 2011-08-24 Ｄｏｗａメタルテック株式会社 アルミニウム−セラミックス接合基板
EP2217043B1 (en) * 2007-11-06 2019-01-30 Mitsubishi Materials Corporation Method for producing a substrate for power module
US7948075B2 (en) * 2008-03-10 2011-05-24 Hitachi Metals, Ltd. Silicon nitride substrate, method of manufacturing the same, and silicon nitride circuit board and semiconductor module using the same

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59150453A (ja) * 1982-12-23 1984-08-28 Toshiba Corp 半導体モジユ−ル用基板の製造方法
JPH0699191B2 (ja) * 1984-12-22 1994-12-07 京セラ株式会社 窒化珪素質焼結体の製造方法
DE69316118T2 (de) * 1992-09-08 1998-04-23 Toshiba Kawasaki Kk Siliciumnitrid-Sinterkörper mit hoher Wärmeleitfähigkeit und Verfahren zu seiner Herstellung
KR100232660B1 (ko) * 1995-03-20 1999-12-01 니시무로 타이죠 질화규소 회로기판
EP0766307B1 (en) 1995-03-20 2007-08-08 Kabushiki Kaisha Toshiba Silicon nitride circuit board
JPH09153567A (ja) 1995-09-28 1997-06-10 Toshiba Corp 高熱伝導性窒化珪素回路基板および半導体装置
JP3629783B2 (ja) * 1995-12-07 2005-03-16 電気化学工業株式会社 回路基板
TW353220B (en) 1996-08-20 1999-02-21 Toshiba Corp Silicon nitride circuit board and semiconductor module
JPH1093211A (ja) 1996-09-17 1998-04-10 Toshiba Corp 窒化けい素回路基板
JP3722573B2 (ja) 1996-12-11 2005-11-30 電気化学工業株式会社 セラミックス基板及びそれを用いた回路基板とその製造方法
WO1999011583A1 (en) 1997-09-03 1999-03-11 Sumitomo Electric Industries, Ltd. Silicon nitride sinter having high thermal conductivity and process for preparing the same

Similar Documents

Publication Publication Date Title
CA2232425A1 (en) Functionally gradient material and its use in a semiconductor circuit substrate
CA2276376A1 (en) Power module board and power module using the board
EP2214202A3 (en) Metal-ceramic circuit board
JP2000128654A5 (enExample)
HK1052799A1 (zh) 有可焊接导热介面的电子组件及其生产方法
EP1089334A3 (en) Ceramic circuit board
TW200701375A (en) Metal-ceramic composite substrate and manufacturing method thereof
EP1020914A3 (en) Ceramic substrate used for fabricating electric or electronic circuit
EP0816526A3 (en) Insulating thermal barrier coating system
CA2398613A1 (en) Substrate and production method therefor
GB2337876B (en) Ceramic electronic part and mounting structure for the same
EP1038853A3 (en) Ceramic sinter and wear resistant member and electronic member using thereof
EP1345264A4 (en) CERAMIC CONDUCTOR PLATE OF THE INTEGRAL TYPE AND METHOD FOR THE PRODUCTION THEREOF
EP0392109A3 (en) Heat-conductive composite material
JPH05347469A (ja) セラミックス回路基板
CA2251875A1 (en) Aluminum nitride heater
EP1253636A8 (en) Electronic equipment
JPS6022347A (ja) 半導体素子搭載用基板
JP3059117B2 (ja) セラミックス回路基板
JPH11100274A5 (enExample)
JPS6126231A (ja) 金属‐セラミツク複合素子およびその製法
JPS6486538A (en) Member for semiconductor device
EP0991120A3 (en) Semiconductor unit
JP2000277662A (ja) セラミックス回路基板
JPH1092988A5 (enExample)