JP2000128654A - 窒化ケイ素複合基板 - Google Patents

窒化ケイ素複合基板

Info

Publication number
JP2000128654A
JP2000128654A JP10306497A JP30649798A JP2000128654A JP 2000128654 A JP2000128654 A JP 2000128654A JP 10306497 A JP10306497 A JP 10306497A JP 30649798 A JP30649798 A JP 30649798A JP 2000128654 A JP2000128654 A JP 2000128654A
Authority
JP
Japan
Prior art keywords
substrate
silicon nitride
thickness
composite substrate
thermal conductivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10306497A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000128654A5 (enExample
Inventor
Ai Ito
愛 伊藤
Tomomasa Miyanaga
倫正 宮永
Masashi Yoshimura
雅司 吉村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP10306497A priority Critical patent/JP2000128654A/ja
Priority to PCT/JP1999/005910 priority patent/WO2000024692A1/ja
Priority to EP99949425A priority patent/EP1142849B1/en
Priority to DE69934909T priority patent/DE69934909T2/de
Priority to US09/830,219 priority patent/US6599637B1/en
Publication of JP2000128654A publication Critical patent/JP2000128654A/ja
Publication of JP2000128654A5 publication Critical patent/JP2000128654A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/4857—Multilayer substrates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/584—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
    • C04B37/026—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used consisting of metals or metal salts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
    • H01L23/49894—Materials of the insulating layers or coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5383—Multilayer substrates
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/12—Metallic interlayers
    • C04B2237/125—Metallic interlayers based on noble metals, e.g. silver
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/36—Non-oxidic
    • C04B2237/368—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/40—Metallic
    • C04B2237/402—Aluminium
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/40—Metallic
    • C04B2237/407—Copper
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/66—Forming laminates or joined articles showing high dimensional accuracy, e.g. indicated by the warpage
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
    • C04B2237/704—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the ceramic layers or articles
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
    • C04B2237/706—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the metallic layers or articles
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/74—Forming laminates or joined articles comprising at least two different interlayers separated by a substrate
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/76—Forming laminates or joined articles comprising at least one member in the form other than a sheet or disc, e.g. two tubes or a tube and a sheet or disc
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Products (AREA)
  • Structure Of Printed Boards (AREA)
JP10306497A 1998-10-28 1998-10-28 窒化ケイ素複合基板 Pending JP2000128654A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP10306497A JP2000128654A (ja) 1998-10-28 1998-10-28 窒化ケイ素複合基板
PCT/JP1999/005910 WO2000024692A1 (fr) 1998-10-28 1999-10-25 Substrat composite au nitrure de silicium
EP99949425A EP1142849B1 (en) 1998-10-28 1999-10-25 Silicon nitride composite substrate
DE69934909T DE69934909T2 (de) 1998-10-28 1999-10-25 Substrat auf der basis eines siliziumnitridkomposits
US09/830,219 US6599637B1 (en) 1998-10-28 1999-10-25 Silicon nitride composite substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10306497A JP2000128654A (ja) 1998-10-28 1998-10-28 窒化ケイ素複合基板

Publications (2)

Publication Number Publication Date
JP2000128654A true JP2000128654A (ja) 2000-05-09
JP2000128654A5 JP2000128654A5 (enExample) 2005-09-08

Family

ID=17957746

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10306497A Pending JP2000128654A (ja) 1998-10-28 1998-10-28 窒化ケイ素複合基板

Country Status (5)

Country Link
US (1) US6599637B1 (enExample)
EP (1) EP1142849B1 (enExample)
JP (1) JP2000128654A (enExample)
DE (1) DE69934909T2 (enExample)
WO (1) WO2000024692A1 (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001064080A (ja) * 1999-06-23 2001-03-13 Ngk Insulators Ltd 窒化珪素焼結体及びその製造方法
JP2002029851A (ja) * 2000-07-17 2002-01-29 Denki Kagaku Kogyo Kk 窒化珪素質組成物、それを用いた窒化珪素質焼結体の製造方法と窒化珪素質焼結体
JP2002029850A (ja) * 2000-07-17 2002-01-29 Denki Kagaku Kogyo Kk 窒化ケイ素焼結体とその製造方法
JP2002203993A (ja) * 2000-12-27 2002-07-19 Toshiba Corp 熱電モジュール用基板およびそれを用いた熱電モジュール
JP2006062907A (ja) * 2004-08-26 2006-03-09 Dowa Mining Co Ltd アルミニウム−セラミックス接合基板

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6958535B2 (en) * 2000-09-22 2005-10-25 Matsushita Electric Industrial Co., Ltd. Thermal conductive substrate and semiconductor module using the same
JP4454191B2 (ja) * 2001-07-30 2010-04-21 日本特殊陶業株式会社 セラミックヒータの製造方法
JP4483161B2 (ja) 2002-08-13 2010-06-16 住友電気工業株式会社 窒化アルミニウム焼結体、メタライズ基板、ヒータ、治具および窒化アルミニウム焼結体の製造方法
WO2005113466A1 (ja) 2004-05-20 2005-12-01 Kabushiki Kaisha Toshiba 高熱伝導性窒化ケイ素焼結体及び窒化ケイ素構造部材
US20100258233A1 (en) * 2007-11-06 2010-10-14 Mitsubishi Materials Corporation Ceramic substrate, method of manufacturing ceramic substrate, and method of manufacturing power module substrate
US7948075B2 (en) 2008-03-10 2011-05-24 Hitachi Metals, Ltd. Silicon nitride substrate, method of manufacturing the same, and silicon nitride circuit board and semiconductor module using the same

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59150453A (ja) * 1982-12-23 1984-08-28 Toshiba Corp 半導体モジユ−ル用基板の製造方法
JPH0699191B2 (ja) * 1984-12-22 1994-12-07 京セラ株式会社 窒化珪素質焼結体の製造方法
DE69316118T2 (de) * 1992-09-08 1998-04-23 Toshiba Kawasaki Kk Siliciumnitrid-Sinterkörper mit hoher Wärmeleitfähigkeit und Verfahren zu seiner Herstellung
WO1996029736A1 (fr) * 1995-03-20 1996-09-26 Kabushiki Kaisha Toshiba Substrat de circuit au nitrure de silicium
EP0766307B1 (en) * 1995-03-20 2007-08-08 Kabushiki Kaisha Toshiba Silicon nitride circuit board
JPH09153567A (ja) 1995-09-28 1997-06-10 Toshiba Corp 高熱伝導性窒化珪素回路基板および半導体装置
JP3629783B2 (ja) * 1995-12-07 2005-03-16 電気化学工業株式会社 回路基板
EP0874399A1 (en) 1996-08-20 1998-10-28 Kabushiki Kaisha Toshiba Silicon nitride circuit board and semiconductor module
JPH1093211A (ja) 1996-09-17 1998-04-10 Toshiba Corp 窒化けい素回路基板
JP3722573B2 (ja) 1996-12-11 2005-11-30 電気化学工業株式会社 セラミックス基板及びそれを用いた回路基板とその製造方法
US6143677A (en) 1997-09-03 2000-11-07 Sumitomo Electric Industries, Ltd. Silicon nitride sinter having high thermal conductivity and process for preparing the same

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001064080A (ja) * 1999-06-23 2001-03-13 Ngk Insulators Ltd 窒化珪素焼結体及びその製造方法
JP2002029851A (ja) * 2000-07-17 2002-01-29 Denki Kagaku Kogyo Kk 窒化珪素質組成物、それを用いた窒化珪素質焼結体の製造方法と窒化珪素質焼結体
JP2002029850A (ja) * 2000-07-17 2002-01-29 Denki Kagaku Kogyo Kk 窒化ケイ素焼結体とその製造方法
JP2002203993A (ja) * 2000-12-27 2002-07-19 Toshiba Corp 熱電モジュール用基板およびそれを用いた熱電モジュール
JP2006062907A (ja) * 2004-08-26 2006-03-09 Dowa Mining Co Ltd アルミニウム−セラミックス接合基板

Also Published As

Publication number Publication date
DE69934909D1 (de) 2007-03-08
EP1142849A1 (en) 2001-10-10
DE69934909T2 (de) 2007-07-05
EP1142849B1 (en) 2007-01-17
EP1142849A4 (en) 2004-11-10
WO2000024692A1 (fr) 2000-05-04
US6599637B1 (en) 2003-07-29

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