JP2000124450A5 - - Google Patents
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- Publication number
- JP2000124450A5 JP2000124450A5 JP1998290528A JP29052898A JP2000124450A5 JP 2000124450 A5 JP2000124450 A5 JP 2000124450A5 JP 1998290528 A JP1998290528 A JP 1998290528A JP 29052898 A JP29052898 A JP 29052898A JP 2000124450 A5 JP2000124450 A5 JP 2000124450A5
- Authority
- JP
- Japan
- Prior art keywords
- region
- semiconductor device
- contact plug
- type
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 description 141
- 239000000758 substrate Substances 0.000 description 101
- 239000010408 film Substances 0.000 description 76
- 239000010410 layer Substances 0.000 description 56
- 229910052751 metal Inorganic materials 0.000 description 45
- 239000002184 metal Substances 0.000 description 45
- 239000012535 impurity Substances 0.000 description 44
- 229910021332 silicide Inorganic materials 0.000 description 40
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 39
- 238000000926 separation method Methods 0.000 description 31
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 24
- 229910052710 silicon Inorganic materials 0.000 description 24
- 239000010703 silicon Substances 0.000 description 24
- 239000011229 interlayer Substances 0.000 description 22
- 238000004519 manufacturing process Methods 0.000 description 21
- 229910052782 aluminium Inorganic materials 0.000 description 20
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 20
- 238000000034 method Methods 0.000 description 14
- 230000010354 integration Effects 0.000 description 10
- 150000002500 ions Chemical class 0.000 description 9
- 238000005530 etching Methods 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000001312 dry etching Methods 0.000 description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- 229910019001 CoSi Inorganic materials 0.000 description 5
- 238000000137 annealing Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 230000001771 impaired effect Effects 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 101100112673 Rattus norvegicus Ccnd2 gene Proteins 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10290528A JP2000124450A (ja) | 1998-10-13 | 1998-10-13 | 半導体装置 |
| US09/285,044 US6064099A (en) | 1998-10-13 | 1999-04-01 | Layout of well contacts and source contacts of a semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10290528A JP2000124450A (ja) | 1998-10-13 | 1998-10-13 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000124450A JP2000124450A (ja) | 2000-04-28 |
| JP2000124450A5 true JP2000124450A5 (enExample) | 2005-12-02 |
Family
ID=17757204
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10290528A Pending JP2000124450A (ja) | 1998-10-13 | 1998-10-13 | 半導体装置 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US6064099A (enExample) |
| JP (1) | JP2000124450A (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW411624B (en) * | 1998-03-21 | 2000-11-11 | Shiu Ching Shiang | Structure, operation and manufacturing method of flash memory cell through channel writing and erasing |
| JP4091304B2 (ja) * | 2002-01-07 | 2008-05-28 | セイコーインスツル株式会社 | 半導体集積回路の製造方法及び半導体集積回路 |
| US7112856B2 (en) * | 2002-07-12 | 2006-09-26 | Samsung Electronics Co., Ltd. | Semiconductor device having a merged region and method of fabrication |
| TW594945B (en) * | 2003-09-05 | 2004-06-21 | Powerchip Semiconductor Corp | Flash memory cell and manufacturing method thereof |
| US7140310B2 (en) * | 2003-11-18 | 2006-11-28 | Cnh Canada, Ltd. | System and method for distributing multiple materials from an agricultural vehicle |
| JP2007258314A (ja) * | 2006-03-22 | 2007-10-04 | Seiko Npc Corp | 半導体装置の製造方法及び半導体装置 |
| JP2010245196A (ja) * | 2009-04-02 | 2010-10-28 | Elpida Memory Inc | 半導体装置およびその製造方法 |
| JP5434501B2 (ja) * | 2009-11-13 | 2014-03-05 | 富士通セミコンダクター株式会社 | Ｍｏｓトランジスタおよび半導体集積回路装置、半導体装置 |
| US9553011B2 (en) * | 2012-12-28 | 2017-01-24 | Texas Instruments Incorporated | Deep trench isolation with tank contact grounding |
| JP6972691B2 (ja) * | 2017-06-19 | 2021-11-24 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
| JP2023170727A (ja) * | 2022-05-20 | 2023-12-01 | ソニーセミコンダクタソリューションズ株式会社 | 半導体装置及び電子機器 |
| WO2025104997A1 (ja) * | 2023-11-17 | 2025-05-22 | ソニーセミコンダクタソリューションズ株式会社 | 半導体装置及び電子機器 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4621276A (en) * | 1984-05-24 | 1986-11-04 | Texas Instruments Incorporated | Buried contacts for N and P channel devices in an SOI-CMOS process using a single N+polycrystalline silicon layer |
| US4647956A (en) * | 1985-02-12 | 1987-03-03 | Cypress Semiconductor Corp. | Back biased CMOS device with means for eliminating latchup |
| US4905073A (en) * | 1987-06-22 | 1990-02-27 | At&T Bell Laboratories | Integrated circuit with improved tub tie |
| JPH0923006A (ja) * | 1995-07-06 | 1997-01-21 | Rohm Co Ltd | 半導体装置 |
| JPH1074843A (ja) * | 1996-06-28 | 1998-03-17 | Toshiba Corp | 多電源集積回路および多電源集積回路システム |
-
1998
- 1998-10-13 JP JP10290528A patent/JP2000124450A/ja active Pending
-
1999
- 1999-04-01 US US09/285,044 patent/US6064099A/en not_active Expired - Lifetime
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