JP2000031280A - 集積回路のためのメタライゼ―ション装置 - Google Patents

集積回路のためのメタライゼ―ション装置

Info

Publication number
JP2000031280A
JP2000031280A JP11171020A JP17102099A JP2000031280A JP 2000031280 A JP2000031280 A JP 2000031280A JP 11171020 A JP11171020 A JP 11171020A JP 17102099 A JP17102099 A JP 17102099A JP 2000031280 A JP2000031280 A JP 2000031280A
Authority
JP
Japan
Prior art keywords
dielectric layer
metallization
layer
substrate
conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP11171020A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000031280A5 (enExample
Inventor
Young-Jin Park
パク ヨン−ジン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of JP2000031280A publication Critical patent/JP2000031280A/ja
Publication of JP2000031280A5 publication Critical patent/JP2000031280A5/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76885—By forming conductive members before deposition of protective insulating material, e.g. pillars, studs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Layout of the interconnection structure
    • H01L23/5283—Cross-sectional geometry
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Geometry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
JP11171020A 1998-06-17 1999-06-17 集積回路のためのメタライゼ―ション装置 Withdrawn JP2000031280A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/099,093 US6137178A (en) 1998-06-17 1998-06-17 Semiconductor metalization system and method
US09/099093 1998-06-17

Publications (2)

Publication Number Publication Date
JP2000031280A true JP2000031280A (ja) 2000-01-28
JP2000031280A5 JP2000031280A5 (enExample) 2006-06-01

Family

ID=22272661

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11171020A Withdrawn JP2000031280A (ja) 1998-06-17 1999-06-17 集積回路のためのメタライゼ―ション装置

Country Status (7)

Country Link
US (1) US6137178A (enExample)
EP (1) EP0966035B1 (enExample)
JP (1) JP2000031280A (enExample)
KR (1) KR100598256B1 (enExample)
CN (1) CN1139112C (enExample)
DE (1) DE69930027T2 (enExample)
TW (1) TW417204B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6849923B2 (en) 1999-03-12 2005-02-01 Kabushiki Kaisha Toshiba Semiconductor device and manufacturing method of the same
JP2011527830A (ja) * 2008-07-09 2011-11-04 テセラ・インターコネクト・マテリアルズ，インコーポレイテッド 導体間隙が縮小された超小型電子相互接続素子

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2786609B1 (fr) * 1998-11-26 2003-10-17 St Microelectronics Sa Circuit integre a capacite interlignes reduite et procede de fabrication associe
US20060017162A1 (en) * 1999-03-12 2006-01-26 Shoji Seta Semiconductor device and manufacturing method of the same
US6420252B1 (en) * 2000-05-10 2002-07-16 Emcore Corporation Methods of forming robust metal contacts on compound semiconductors
US7892962B2 (en) * 2007-09-05 2011-02-22 Taiwan Semiconductor Manufacturing Company, Ltd. Nail-shaped pillar for wafer-level chip-scale packaging
US8309446B2 (en) 2008-07-16 2012-11-13 Applied Materials, Inc. Hybrid heterojunction solar cell fabrication using a doping layer mask
EP2359410A4 (en) 2008-12-10 2014-09-24 Applied Materials Inc IMPROVED VISIBILITY SYSTEM FOR ALIGNMENT OF SCREEN PRINT PATTERNS
US9064968B2 (en) * 2013-08-19 2015-06-23 Phison Electronics Corp. Non-volatile memory device and operation and fabricating methods thereof
US8772951B1 (en) 2013-08-29 2014-07-08 Qualcomm Incorporated Ultra fine pitch and spacing interconnects for substrate
US9159670B2 (en) 2013-08-29 2015-10-13 Qualcomm Incorporated Ultra fine pitch and spacing interconnects for substrate
KR102377372B1 (ko) * 2014-04-02 2022-03-21 어플라이드 머티어리얼스, 인코포레이티드 인터커넥트들을 형성하기 위한 방법
US20190067178A1 (en) * 2017-08-30 2019-02-28 Qualcomm Incorporated Fine pitch and spacing interconnects with reserve interconnect portion

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3057975B2 (ja) * 1993-09-27 2000-07-04 日本電気株式会社 集積回路の配線
US5471093A (en) * 1994-10-28 1995-11-28 Advanced Micro Devices, Inc. Pseudo-low dielectric constant technology
JPH08293523A (ja) * 1995-02-21 1996-11-05 Seiko Epson Corp 半導体装置およびその製造方法
US5702982A (en) * 1996-03-28 1997-12-30 Taiwan Semiconductor Manufacturing Company, Ltd. Method for making metal contacts and interconnections concurrently on semiconductor integrated circuits
US5846876A (en) * 1996-06-05 1998-12-08 Advanced Micro Devices, Inc. Integrated circuit which uses a damascene process for producing staggered interconnect lines
US5753976A (en) * 1996-06-14 1998-05-19 Minnesota Mining And Manufacturing Company Multi-layer circuit having a via matrix interlayer connection
KR100219508B1 (ko) * 1996-12-30 1999-09-01 윤종용 반도체장치의 금속배선층 형성방법

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6849923B2 (en) 1999-03-12 2005-02-01 Kabushiki Kaisha Toshiba Semiconductor device and manufacturing method of the same
US7169697B2 (en) 1999-03-12 2007-01-30 Kabushiki Kaisha Toshiba Semiconductor device and manufacturing method of the same
JP2011527830A (ja) * 2008-07-09 2011-11-04 テセラ・インターコネクト・マテリアルズ，インコーポレイテッド 導体間隙が縮小された超小型電子相互接続素子
US8900464B2 (en) 2008-07-09 2014-12-02 Invensas Corporation Method of making a microelectronic interconnect element with decreased conductor spacing
US9524947B2 (en) 2008-07-09 2016-12-20 Invensas Corporation Microelectronic interconnect element with decreased conductor spacing
US9856135B2 (en) 2008-07-09 2018-01-02 Invensas Corporation Microelectronic interconnect element with decreased conductor spacing

Also Published As

Publication number Publication date
EP0966035A1 (en) 1999-12-22
KR100598256B1 (ko) 2006-07-07
DE69930027D1 (de) 2006-04-27
DE69930027T2 (de) 2006-09-14
CN1254949A (zh) 2000-05-31
EP0966035B1 (en) 2006-03-01
US6137178A (en) 2000-10-24
KR20000006238A (ko) 2000-01-25
CN1139112C (zh) 2004-02-18
TW417204B (en) 2001-01-01

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