JP2000030654A5 - - Google Patents
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- JP2000030654A5 JP2000030654A5 JP1999169351A JP16935199A JP2000030654A5 JP 2000030654 A5 JP2000030654 A5 JP 2000030654A5 JP 1999169351 A JP1999169351 A JP 1999169351A JP 16935199 A JP16935199 A JP 16935199A JP 2000030654 A5 JP2000030654 A5 JP 2000030654A5
- Authority
- JP
- Japan
- Prior art keywords
- detectors
- sample
- particle beam
- objective lens
- optical axis
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002245 particle Substances 0.000 description 5
- 230000003287 optical Effects 0.000 description 3
Description
【請求項1】 ビーム発生器(1,2,3)と;
試料(10)上に粒子ビームをフォーカシングする焦面を有する対物レンズ(5,5a,6)と;
上記試料上に飛来する粒子ビームのエネルギを約5Keボルト以上の1次エネルギから約200eボルト以上の最低1次エネルギまでに変化させる静電装置と;
上記ビーム発生器(1,2,3)と対物レンズ(5,5a,6)の焦面との間に配設された、試料(10)から反射散乱されたまたは放射された粒子(19,20)を検知する2つの検知器(11,12,13,15,16)と;から構成された光軸を有する粒子ビーム装置において、
上記2つの検知器は、光軸の方向へ相互にずらして配設されており、この2つの検知器間の間隔は、試料側の検知器(11,12)と対物レンズの焦面との間隔の50%と75%の範囲にあることを特徴とする粒子ビーム装置。
試料(10)上に粒子ビームをフォーカシングする焦面を有する対物レンズ(5,5a,6)と;
上記試料上に飛来する粒子ビームのエネルギを約5Keボルト以上の1次エネルギから約200eボルト以上の最低1次エネルギまでに変化させる静電装置と;
上記ビーム発生器(1,2,3)と対物レンズ(5,5a,6)の焦面との間に配設された、試料(10)から反射散乱されたまたは放射された粒子(19,20)を検知する2つの検知器(11,12,13,15,16)と;から構成された光軸を有する粒子ビーム装置において、
上記2つの検知器は、光軸の方向へ相互にずらして配設されており、この2つの検知器間の間隔は、試料側の検知器(11,12)と対物レンズの焦面との間隔の50%と75%の範囲にあることを特徴とする粒子ビーム装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19828476A DE19828476A1 (de) | 1998-06-26 | 1998-06-26 | Teilchenstrahlgerät |
DE19828476.4 | 1998-06-26 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2000030654A JP2000030654A (ja) | 2000-01-28 |
JP2000030654A5 true JP2000030654A5 (ja) | 2006-07-06 |
JP4482179B2 JP4482179B2 (ja) | 2010-06-16 |
Family
ID=7872080
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16935199A Expired - Lifetime JP4482179B2 (ja) | 1998-06-26 | 1999-06-16 | 粒子ビーム装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US6498345B1 (ja) |
EP (1) | EP0969495B1 (ja) |
JP (1) | JP4482179B2 (ja) |
DE (1) | DE19828476A1 (ja) |
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DE10211977A1 (de) * | 2002-03-18 | 2003-10-02 | Leo Elektronenmikroskopie Gmbh | Rasterelektronenmikroskop |
JP2003331774A (ja) * | 2002-05-16 | 2003-11-21 | Toshiba Corp | 電子ビーム装置およびその装置を用いたデバイス製造方法 |
DE10236738B9 (de) | 2002-08-09 | 2010-07-15 | Carl Zeiss Nts Gmbh | Elektronenmikroskopiesystem und Elektronenmikroskopieverfahren |
DE10301579A1 (de) * | 2003-01-16 | 2004-07-29 | Leo Elektronenmikroskopie Gmbh | Elektronenstrahlgerät und Detektoranordnung |
DE102004037781A1 (de) * | 2004-08-03 | 2006-02-23 | Carl Zeiss Nts Gmbh | Elektronenstrahlgerät |
JP2006114225A (ja) * | 2004-10-12 | 2006-04-27 | Hitachi High-Technologies Corp | 荷電粒子線装置 |
JP5033310B2 (ja) | 2005-02-18 | 2012-09-26 | 株式会社日立ハイテクノロジーズ | 検査装置 |
JP4943733B2 (ja) * | 2005-04-28 | 2012-05-30 | 株式会社日立ハイテクノロジーズ | 荷電粒子ビームを用いた検査方法及び検査装置 |
US7462828B2 (en) | 2005-04-28 | 2008-12-09 | Hitachi High-Technologies Corporation | Inspection method and inspection system using charged particle beam |
JP4732917B2 (ja) * | 2006-02-15 | 2011-07-27 | 株式会社日立ハイテクノロジーズ | 走査型電子顕微鏡及び欠陥検出装置 |
DE602006021746D1 (de) * | 2006-09-07 | 2011-06-16 | Integrated Circuit Testing | Asymmetrischer ringförmiger Detektor |
US7851755B2 (en) | 2006-12-20 | 2010-12-14 | Jeol Ltd. | Apparatus for detecting backscattered electrons in a beam apparatus |
DE102007010873B4 (de) * | 2007-03-06 | 2009-07-30 | Carl Zeiss Nts Gmbh | Objektivlinse |
US7952073B2 (en) * | 2008-08-01 | 2011-05-31 | Direct Electron, Lp | Apparatus and method including a direct bombardment detector and a secondary detector for use in electron microscopy |
EP2219204B1 (en) * | 2009-02-12 | 2012-03-21 | ICT, Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Arrangement and method for the contrast improvement in a charged particle beam device for inspecting a specimen |
US9202667B2 (en) * | 2009-02-19 | 2015-12-01 | Hitachi High-Technologies Corporation | Charged particle radiation device with bandpass detection |
DE102009016861A1 (de) * | 2009-04-08 | 2010-10-21 | Carl Zeiss Nts Gmbh | Teilchenstrahlmikroskop |
DE102009046211B4 (de) | 2009-10-30 | 2017-08-24 | Carl Zeiss Microscopy Gmbh | Detektionsvorrichtung und Teilchenstrahlgerät mit Detektionsvorrichtung |
JP5542537B2 (ja) * | 2010-06-16 | 2014-07-09 | 株式会社日立ハイテクノロジーズ | 荷電粒子線装置 |
US8319192B2 (en) | 2010-08-24 | 2012-11-27 | Hermes Microvision Inc. | Charged particle apparatus |
DE102010041156B9 (de) | 2010-09-21 | 2018-01-25 | Carl Zeiss Microscopy Gmbh | Blendeneinheit für ein Teilchenstrahlgerät sowie Teilchenstrahlgerät |
EP2511939B1 (en) | 2011-04-13 | 2016-03-23 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Arrangement and method for the contrast improvement in a charged particle beam device for inspecting a specimen |
DE102011080341A1 (de) | 2011-08-03 | 2013-02-07 | Carl Zeiss Nts Gmbh | Verfahren und Teilchenstrahlgerät zur Erzeugung eines Bildes eines Objekts |
EP2557584A1 (en) * | 2011-08-10 | 2013-02-13 | Fei Company | Charged-particle microscopy imaging method |
US8704176B2 (en) | 2011-08-10 | 2014-04-22 | Fei Company | Charged particle microscope providing depth-resolved imagery |
JP5860642B2 (ja) | 2011-09-07 | 2016-02-16 | 株式会社日立ハイテクノロジーズ | 走査電子顕微鏡 |
EP2665082A1 (en) * | 2012-05-16 | 2013-11-20 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Element for fast magnetic beam deflection |
EP2682978B1 (en) * | 2012-07-05 | 2016-10-19 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Contamination reduction electrode for particle detector |
JP2012186177A (ja) * | 2012-06-18 | 2012-09-27 | Hitachi High-Technologies Corp | 電子線応用装置 |
DE102012215945A1 (de) | 2012-09-07 | 2014-03-13 | Carl Zeiss Microscopy Gmbh | Teilchenstrahlgerät und Verfahren zum Betrieb eines Teilchenstrahlgeräts |
JP6124679B2 (ja) * | 2013-05-15 | 2017-05-10 | 日本電子株式会社 | 走査荷電粒子顕微鏡および画像取得方法 |
WO2015016040A1 (ja) | 2013-08-02 | 2015-02-05 | 株式会社 日立ハイテクノロジーズ | 走査電子顕微鏡 |
US9558911B2 (en) * | 2014-08-01 | 2017-01-31 | Carl Zeiss Microscopy Gmbh | Method for analyzing and/or processing an object as well as a particle beam device for carrying out the method |
JP2016115680A (ja) * | 2014-12-17 | 2016-06-23 | アプライド マテリアルズ イスラエル リミテッド | 収差補正開孔を有する走査型荷電粒子ビームデバイスおよびその動作方法 |
US10008360B2 (en) | 2015-01-26 | 2018-06-26 | Hermes Microvision Inc. | Objective lens system for fast scanning large FOV |
WO2018217646A1 (en) | 2017-05-22 | 2018-11-29 | Howmedica Osteonics Corp. | Device for in-situ fabrication process monitoring and feedback control of an electron beam additive manufacturing process |
US11107656B2 (en) | 2017-06-02 | 2021-08-31 | Hitachi High-Tech Corporation | Charged particle beam device |
US10777382B2 (en) | 2017-11-21 | 2020-09-15 | Focus-Ebeam Technology (Beijing) Co., Ltd. | Low voltage scanning electron microscope and method for specimen observation |
DE102017130072B4 (de) * | 2017-12-15 | 2021-05-20 | Leibniz-Institut Für Festkörper- Und Werkstoffforschung Dresden E.V. | Impulsauflösendes Photoelektronenspektrometer und Verfahren zur impulsauflösenden Photoelektronenspektroskopie |
AU2019206103A1 (en) | 2018-07-19 | 2020-02-06 | Howmedica Osteonics Corp. | System and process for in-process electron beam profile and location analyses |
DE102019131998A1 (de) | 2018-11-29 | 2020-06-04 | Magna Closures Inc. | Verstellbare hebeplatte für rahmenlose tür |
DE102019133658A1 (de) * | 2019-12-10 | 2021-06-10 | Carl Zeiss Smt Gmbh | Vorrichtung und Verfahren zum Bearbeiten einer mikrostrukturierten Komponente |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4528452A (en) * | 1982-12-09 | 1985-07-09 | Electron Beam Corporation | Alignment and detection system for electron image projectors |
EP0274622B1 (de) | 1986-12-12 | 1990-11-07 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Detektoranordnung mit einem Detektorobjektiv für Korpuskularstrahlgeräte |
DE3888712D1 (de) | 1987-02-02 | 1994-05-05 | Integrated Circuit Testing | Detektorobjectiv für Rastermikroskope. |
US5063293A (en) * | 1987-11-09 | 1991-11-05 | The University Of Michigan | Positron microscopy |
US4926054A (en) | 1988-03-17 | 1990-05-15 | Ict Integrated Circuit Testing Gesellschaft Fur Halbleiterpruftechnik Mbh | Objective lens for focusing charged particles in an electron microscope |
EP0490154A3 (en) * | 1990-12-07 | 1992-09-30 | Siemens Aktiengesellschaft | Method for determining the charge of a sample region |
US5644132A (en) | 1994-06-20 | 1997-07-01 | Opan Technologies Ltd. | System for high resolution imaging and measurement of topographic and material features on a specimen |
US5466940A (en) * | 1994-06-20 | 1995-11-14 | Opal Technologies Ltd. | Electron detector with high backscattered electron acceptance for particle beam apparatus |
DE69504294T2 (de) * | 1994-12-19 | 1999-04-08 | Opal Technologies Ltd | System zur Hochauflösungsbildgebung und Messung von topographischen Characteristiken und Materialcharakteristiken einer Probe |
US5894124A (en) * | 1995-03-17 | 1999-04-13 | Hitachi, Ltd. | Scanning electron microscope and its analogous device |
JP3774953B2 (ja) * | 1995-10-19 | 2006-05-17 | 株式会社日立製作所 | 走査形電子顕微鏡 |
EP0769799B1 (en) * | 1995-10-19 | 2010-02-17 | Hitachi, Ltd. | Scanning electron microscope |
JP3136353B2 (ja) * | 1996-02-09 | 2001-02-19 | 株式会社ホロン | 走査型電子顕微鏡の2次電子検出装置 |
DE69602936T2 (de) * | 1996-07-25 | 1999-11-04 | Act Advanced Circuit Testing | Detektor-Objektivlinse |
US5945672A (en) * | 1998-01-29 | 1999-08-31 | Fei Company | Gaseous backscattered electron detector for an environmental scanning electron microscope |
US6590210B1 (en) * | 1998-03-10 | 2003-07-08 | Erik Essers | Scanning electron microscope |
US6201240B1 (en) * | 1998-11-04 | 2001-03-13 | Applied Materials, Inc. | SEM image enhancement using narrow band detection and color assignment |
-
1998
- 1998-06-26 DE DE19828476A patent/DE19828476A1/de not_active Withdrawn
-
1999
- 1999-05-20 EP EP99109886A patent/EP0969495B1/de not_active Expired - Lifetime
- 1999-06-16 JP JP16935199A patent/JP4482179B2/ja not_active Expired - Lifetime
- 1999-06-23 US US09/339,348 patent/US6498345B1/en not_active Expired - Lifetime
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