ITMI950819A0 - Procedimento per la lavorazione di wafer sottili e celle solari di silicio cristallino - Google Patents

Procedimento per la lavorazione di wafer sottili e celle solari di silicio cristallino

Info

Publication number
ITMI950819A0
ITMI950819A0 ITMI950819A ITMI950819A ITMI950819A0 IT MI950819 A0 ITMI950819 A0 IT MI950819A0 IT MI950819 A ITMI950819 A IT MI950819A IT MI950819 A ITMI950819 A IT MI950819A IT MI950819 A0 ITMI950819 A0 IT MI950819A0
Authority
IT
Italy
Prior art keywords
processing
solar cells
crystalline silicon
silicon solar
thin wafers
Prior art date
Application number
ITMI950819A
Other languages
English (en)
Original Assignee
Siemens Ag
Siemens Solar Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag, Siemens Solar Gmbh filed Critical Siemens Ag
Publication of ITMI950819A0 publication Critical patent/ITMI950819A0/it
Publication of ITMI950819A1 publication Critical patent/ITMI950819A1/it
Application granted granted Critical
Publication of IT1273603B publication Critical patent/IT1273603B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
ITMI950819A 1994-04-29 1995-04-21 Procedimento per la lavorazione di wafer sottili e celle solari di silicio cristallino IT1273603B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE4415132A DE4415132C2 (de) 1994-04-29 1994-04-29 Verfahren zur formgebenden Bearbeitung von dünnen Wafern und Solarzellen aus kristallinem Silizium

Publications (3)

Publication Number Publication Date
ITMI950819A0 true ITMI950819A0 (it) 1995-04-21
ITMI950819A1 ITMI950819A1 (it) 1996-10-21
IT1273603B IT1273603B (it) 1997-07-08

Family

ID=6516870

Family Applications (1)

Application Number Title Priority Date Filing Date
ITMI950819A IT1273603B (it) 1994-04-29 1995-04-21 Procedimento per la lavorazione di wafer sottili e celle solari di silicio cristallino

Country Status (5)

Country Link
US (1) US5650363A (it)
EP (1) EP0680100A3 (it)
JP (1) JPH07321363A (it)
DE (1) DE4415132C2 (it)
IT (1) IT1273603B (it)

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DE19943101C2 (de) * 1999-09-09 2002-06-20 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer gebondeten Halbleiterscheibe
WO2003005457A1 (en) * 2001-07-04 2003-01-16 Ebara Corporation Solar cell module and method of manufacturing the same
JP5057619B2 (ja) * 2001-08-01 2012-10-24 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6812064B2 (en) * 2001-11-07 2004-11-02 Micron Technology, Inc. Ozone treatment of a ground semiconductor die to improve adhesive bonding to a substrate
TWI264121B (en) * 2001-11-30 2006-10-11 Semiconductor Energy Lab A display device, a method of manufacturing a semiconductor device, and a method of manufacturing a display device
US6953735B2 (en) 2001-12-28 2005-10-11 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating a semiconductor device by transferring a layer to a support with curvature
JP2003243678A (ja) * 2002-02-15 2003-08-29 Ebara Corp 太陽電池モジュール及びその製造方法
KR20030004992A (ko) * 2002-03-29 2003-01-15 주식회사 에이티에스쏠라 태양전지용 3상 크리스탈 실리콘 인곳트 및 그 제조방법
DE10308048A1 (de) * 2003-02-26 2004-09-09 Abb Research Ltd. Verfahren zur Herstellung von Trägerelementen
DE102004007690B3 (de) * 2004-02-16 2005-10-13 Infineon Technologies Ag Integrierte Schaltungsanordnung
US7368307B2 (en) * 2005-06-07 2008-05-06 Eastman Kodak Company Method of manufacturing an OLED device with a curved light emitting surface
KR101378418B1 (ko) * 2007-11-01 2014-03-27 삼성전자주식회사 이미지센서 모듈 및 그 제조방법
US8322300B2 (en) * 2008-02-07 2012-12-04 Sunpower Corporation Edge coating apparatus with movable roller applicator for solar cell substrates
US8662008B2 (en) * 2008-02-07 2014-03-04 Sunpower Corporation Edge coating apparatus for solar cell substrates
US20090218041A1 (en) * 2008-02-29 2009-09-03 Motorola, Inc. Method for manufacturing a portable electronic device housing
US20100253902A1 (en) 2009-04-07 2010-10-07 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and manufacturing method thereof
US8911653B2 (en) 2009-05-21 2014-12-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing light-emitting device
US8691663B2 (en) * 2009-11-06 2014-04-08 Alliance For Sustainable Energy, Llc Methods of manipulating stressed epistructures
JP2011108907A (ja) * 2009-11-19 2011-06-02 Kyocera Corp 実装構造体、光電変換装置、並びに光電変換モジュール
US8607444B2 (en) * 2010-03-06 2013-12-17 Apple Inc. Method for forming a housing of an electronic device
US8954156B2 (en) 2010-10-27 2015-02-10 National Tsing Hua University Methods and apparatuses for configuring artificial retina devices
US9114004B2 (en) 2010-10-27 2015-08-25 Iridium Medical Technology Co, Ltd. Flexible artificial retina devices
US20140000690A1 (en) * 2011-03-15 2014-01-02 Victor V. Plotnikov Intrinsically Semitransparent Solar Cell and Method of Making Same
US8613135B2 (en) * 2011-05-06 2013-12-24 National Tsing Hua University Method for non-planar chip assembly
AU2011367826B2 (en) * 2011-05-06 2015-12-17 Iridium Medical Technology Co., Ltd. Non-planar chip assembly
US9155881B2 (en) 2011-05-06 2015-10-13 Iridium Medical Technology Co, Ltd. Non-planar chip assembly
DE102011077849A1 (de) 2011-06-21 2012-12-27 Robert Bosch Gmbh Solarzelle sowie Verfahren und Anordnung zur Herstellung einer solchen
DE102011081081A1 (de) 2011-08-17 2013-02-21 Robert Bosch Gmbh Solarmodul
TWI508252B (zh) * 2011-11-18 2015-11-11 Iridium Medical Technology Co Ltd 非平面晶片組件
ITMI20112296A1 (it) 2011-12-16 2013-06-17 St Microelectronics Srl Dispositivo elettronico flessibile incapsulato e relativo metodo di fabbricazione
JP5907722B2 (ja) 2011-12-23 2016-04-26 株式会社半導体エネルギー研究所 発光装置の作製方法
DE102011057172A1 (de) * 2011-12-29 2013-07-04 Gp Solar Gmbh Verfahren und Vorrichtung zur Herstellung einer Beschichtung auf einem Halbleiterbauelement
FR2995136B1 (fr) * 2012-09-04 2015-06-26 Soitec Silicon On Insulator Pseudo-substrat avec efficacite amelioree d'utilisation d'un materiau monocristallin
WO2014129519A1 (en) 2013-02-20 2014-08-28 Semiconductor Energy Laboratory Co., Ltd. Peeling method, semiconductor device, and peeling apparatus
CN105793957B (zh) 2013-12-12 2019-05-03 株式会社半导体能源研究所 剥离方法及剥离装置

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DE4343296C2 (de) * 1993-12-17 1996-09-12 Siemens Ag Verfahren zur Herstellung einer Siliziumhalbleiterscheibe mit drei gegeneinander verkippten kreissektorförmigen monokristallinen Bereichen und seine Verwendung

Also Published As

Publication number Publication date
JPH07321363A (ja) 1995-12-08
US5650363A (en) 1997-07-22
DE4415132A1 (de) 1995-11-02
EP0680100A3 (de) 1998-05-13
IT1273603B (it) 1997-07-08
DE4415132C2 (de) 1997-03-20
ITMI950819A1 (it) 1996-10-21
EP0680100A2 (de) 1995-11-02

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