KR960019115U - 반도체 웨이퍼의 산화막 형성용 확산로 - Google Patents

반도체 웨이퍼의 산화막 형성용 확산로

Info

Publication number
KR960019115U
KR960019115U KR2019940029351U KR19940029351U KR960019115U KR 960019115 U KR960019115 U KR 960019115U KR 2019940029351 U KR2019940029351 U KR 2019940029351U KR 19940029351 U KR19940029351 U KR 19940029351U KR 960019115 U KR960019115 U KR 960019115U
Authority
KR
South Korea
Prior art keywords
semiconductor wafers
oxide films
diffusion furnace
forming oxide
forming
Prior art date
Application number
KR2019940029351U
Other languages
English (en)
Other versions
KR0125853Y1 (ko
Inventor
홍성탁
Original Assignee
엘지반도체주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지반도체주식회사 filed Critical 엘지반도체주식회사
Priority to KR2019940029351U priority Critical patent/KR0125853Y1/ko
Publication of KR960019115U publication Critical patent/KR960019115U/ko
Application granted granted Critical
Publication of KR0125853Y1 publication Critical patent/KR0125853Y1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
KR2019940029351U 1994-11-05 1994-11-05 반도체 웨이퍼의 산화막 형성용 확산로 KR0125853Y1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR2019940029351U KR0125853Y1 (ko) 1994-11-05 1994-11-05 반도체 웨이퍼의 산화막 형성용 확산로

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR2019940029351U KR0125853Y1 (ko) 1994-11-05 1994-11-05 반도체 웨이퍼의 산화막 형성용 확산로

Publications (2)

Publication Number Publication Date
KR960019115U true KR960019115U (ko) 1996-06-19
KR0125853Y1 KR0125853Y1 (ko) 1998-11-02

Family

ID=19397490

Family Applications (1)

Application Number Title Priority Date Filing Date
KR2019940029351U KR0125853Y1 (ko) 1994-11-05 1994-11-05 반도체 웨이퍼의 산화막 형성용 확산로

Country Status (1)

Country Link
KR (1) KR0125853Y1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100568536B1 (ko) * 2000-01-19 2006-04-07 삼성전자주식회사 반도체 소자 제조용 수직 확산로

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100568536B1 (ko) * 2000-01-19 2006-04-07 삼성전자주식회사 반도체 소자 제조용 수직 확산로

Also Published As

Publication number Publication date
KR0125853Y1 (ko) 1998-11-02

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