KR920008873A - 화합물 반도체 웨이퍼의 열처리방법 - Google Patents

화합물 반도체 웨이퍼의 열처리방법

Info

Publication number
KR920008873A
KR920008873A KR1019900016943A KR900016943A KR920008873A KR 920008873 A KR920008873 A KR 920008873A KR 1019900016943 A KR1019900016943 A KR 1019900016943A KR 900016943 A KR900016943 A KR 900016943A KR 920008873 A KR920008873 A KR 920008873A
Authority
KR
South Korea
Prior art keywords
heat treatment
semiconductor wafer
treatment method
compound semiconductor
compound
Prior art date
Application number
KR1019900016943A
Other languages
English (en)
Other versions
KR930004120B1 (ko
Inventor
박주성
Original Assignee
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성전자 주식회사 filed Critical 삼성전자 주식회사
Priority to KR1019900016943A priority Critical patent/KR930004120B1/ko
Publication of KR920008873A publication Critical patent/KR920008873A/ko
Application granted granted Critical
Publication of KR930004120B1 publication Critical patent/KR930004120B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
KR1019900016943A 1990-10-22 1990-10-22 화합물 반도체 웨이퍼의 열처리방법 KR930004120B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019900016943A KR930004120B1 (ko) 1990-10-22 1990-10-22 화합물 반도체 웨이퍼의 열처리방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900016943A KR930004120B1 (ko) 1990-10-22 1990-10-22 화합물 반도체 웨이퍼의 열처리방법

Publications (2)

Publication Number Publication Date
KR920008873A true KR920008873A (ko) 1992-05-28
KR930004120B1 KR930004120B1 (ko) 1993-05-20

Family

ID=19305048

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900016943A KR930004120B1 (ko) 1990-10-22 1990-10-22 화합물 반도체 웨이퍼의 열처리방법

Country Status (1)

Country Link
KR (1) KR930004120B1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010000939A (ko) * 2000-10-30 2001-01-05 문숙희 목재 또는 석재의 무늬 조각방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010000939A (ko) * 2000-10-30 2001-01-05 문숙희 목재 또는 석재의 무늬 조각방법

Also Published As

Publication number Publication date
KR930004120B1 (ko) 1993-05-20

Similar Documents

Publication Publication Date Title
DE69509046D1 (de) Plasmareaktoren zur Behandlung von Halbleiterscheiben
KR880700862A (ko) 실리콘 웨이퍼와 같은 얇은 부분을 열 처리하는 장치
EP0442718A3 (en) Method of manufacturing semiconductor device
DE69434773D1 (de) Vorrichtung zur schnellen thermischen Behandlung zur Herstellung von Halbleiterwafern
KR900008635A (ko) 반도체 웨이퍼의 흐림 방지장치
DE69619330D1 (de) Herstellung von Halbleiterwafern
KR900010954A (ko) Cmos반도체장치의 제조방법
EP0447175A3 (en) Method of manufacture of semiconductor devices
KR900008697A (ko) 반도체 웨이퍼 제조방법
EP0437371A3 (en) Method of manufacturing semiconductor device
DE69116033D1 (de) Reaktor zur Behandlung von Halbleiterscheiben.
EP0438693A3 (en) Method of manufacturing semiconductor device
KR960009038A (ko) 반도체 기판의 건식세정방법
EP0446532A3 (en) Method of manufacturing semiconductor device
KR900013596A (ko) 화합물 반도체의 에칭 방법
DE69125498D1 (de) Halbleiterverrichtungsherstellungsverfahren
KR920008873A (ko) 화합물 반도체 웨이퍼의 열처리방법
KR960015805A (ko) 반도체 장치의 제조 방법
FR2718286B1 (fr) Procédé d'attaque de tranches de semi-conducteur.
DE69124686D1 (de) Wärmebehandlung von Halbleiterbauelementen
EP0452966A3 (en) Method of manufacturing semiconductor device
KR890015429A (ko) Mos형 반도체소자의 제조방법
EP0495113A4 (en) Method of manufacturing semiconductor device
KR960015722A (ko) 고온 열처리를 포함하는 반도체 장치의 제조 방법
KR960009211A (ko) 반도체장치의 제조방법

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20060502

Year of fee payment: 14

LAPS Lapse due to unpaid annual fee