KR960009211A - 반도체장치의 제조방법 - Google Patents
반도체장치의 제조방법 Download PDFInfo
- Publication number
- KR960009211A KR960009211A KR1019950025585A KR19950025585A KR960009211A KR 960009211 A KR960009211 A KR 960009211A KR 1019950025585 A KR1019950025585 A KR 1019950025585A KR 19950025585 A KR19950025585 A KR 19950025585A KR 960009211 A KR960009211 A KR 960009211A
- Authority
- KR
- South Korea
- Prior art keywords
- manufacturing
- semiconductor device
- semiconductor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8222—Bipolar technology
- H01L21/8228—Complementary devices, e.g. complementary transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22724894A JP3551489B2 (ja) | 1994-08-29 | 1994-08-29 | 半導体装置の製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR960009211A true KR960009211A (ko) | 1996-03-22 |
Family
ID=16857845
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950025585A KR960009211A (ko) | 1994-08-29 | 1995-08-21 | 반도체장치의 제조방법 |
Country Status (3)
Country | Link |
---|---|
US (1) | US5629219A (ko) |
JP (1) | JP3551489B2 (ko) |
KR (1) | KR960009211A (ko) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3409618B2 (ja) * | 1996-12-26 | 2003-05-26 | ソニー株式会社 | 半導体装置の製造方法 |
DE19742624A1 (de) * | 1997-09-26 | 1999-04-22 | Siemens Ag | Herstellverfahren für einen vertikalen Bipolartransistor |
KR100524997B1 (ko) * | 2004-01-02 | 2005-10-31 | 삼성전자주식회사 | 상보형 바이폴라 접합 트랜지스터의 제조방법 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04150017A (ja) * | 1990-10-12 | 1992-05-22 | Toshiba Corp | 半導体装置の製造方法 |
-
1994
- 1994-08-29 JP JP22724894A patent/JP3551489B2/ja not_active Expired - Fee Related
-
1995
- 1995-08-21 KR KR1019950025585A patent/KR960009211A/ko not_active Application Discontinuation
- 1995-08-29 US US08/520,704 patent/US5629219A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP3551489B2 (ja) | 2004-08-04 |
JPH0870047A (ja) | 1996-03-12 |
US5629219A (en) | 1997-05-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |