KR970003958A - 반도체소자의 제조방법 - Google Patents
반도체소자의 제조방법 Download PDFInfo
- Publication number
- KR970003958A KR970003958A KR1019950017676A KR19950017676A KR970003958A KR 970003958 A KR970003958 A KR 970003958A KR 1019950017676 A KR1019950017676 A KR 1019950017676A KR 19950017676 A KR19950017676 A KR 19950017676A KR 970003958 A KR970003958 A KR 970003958A
- Authority
- KR
- South Korea
- Prior art keywords
- manufacturing
- semiconductor device
- semiconductor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/48—Data lines or contacts therefor
- H10B12/482—Bit lines
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/48—Data lines or contacts therefor
- H10B12/485—Bit line contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950017676A KR0159011B1 (ko) | 1995-06-28 | 1995-06-28 | 반도체소자의 제조방법 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950017676A KR0159011B1 (ko) | 1995-06-28 | 1995-06-28 | 반도체소자의 제조방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR970003958A true KR970003958A (ko) | 1997-01-29 |
| KR0159011B1 KR0159011B1 (ko) | 1998-12-01 |
Family
ID=19418449
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019950017676A KR0159011B1 (ko) | 1995-06-28 | 1995-06-28 | 반도체소자의 제조방법 |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR0159011B1 (ko) |
-
1995
- 1995-06-28 KR KR1019950017676A patent/KR0159011B1/ko not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR0159011B1 (ko) | 1998-12-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20100726 Year of fee payment: 13 |
|
| LAPS | Lapse due to unpaid annual fee |