KR960027784U - 반도체 제조장치의 가스확산기구 - Google Patents
반도체 제조장치의 가스확산기구Info
- Publication number
- KR960027784U KR960027784U KR2019950000541U KR19950000541U KR960027784U KR 960027784 U KR960027784 U KR 960027784U KR 2019950000541 U KR2019950000541 U KR 2019950000541U KR 19950000541 U KR19950000541 U KR 19950000541U KR 960027784 U KR960027784 U KR 960027784U
- Authority
- KR
- South Korea
- Prior art keywords
- gas diffusion
- semiconductor manufacturing
- manufacturing equipment
- diffusion mechanism
- equipment
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR2019950000541U KR0127584Y1 (ko) | 1995-01-14 | 1995-01-14 | 반도체 제조장치의 가스확산기구 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR2019950000541U KR0127584Y1 (ko) | 1995-01-14 | 1995-01-14 | 반도체 제조장치의 가스확산기구 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR960027784U true KR960027784U (ko) | 1996-08-17 |
KR0127584Y1 KR0127584Y1 (ko) | 1998-12-01 |
Family
ID=19406722
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR2019950000541U KR0127584Y1 (ko) | 1995-01-14 | 1995-01-14 | 반도체 제조장치의 가스확산기구 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR0127584Y1 (ko) |
-
1995
- 1995-01-14 KR KR2019950000541U patent/KR0127584Y1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR0127584Y1 (ko) | 1998-12-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
REGI | Registration of establishment | ||
FPAY | Annual fee payment |
Payment date: 20050621 Year of fee payment: 8 |
|
LAPS | Lapse due to unpaid annual fee |