IT963412B - Matrice di memoria a semicondutto ri e relativo procedimento di fabbricazione - Google Patents
Matrice di memoria a semicondutto ri e relativo procedimento di fabbricazioneInfo
- Publication number
- IT963412B IT963412B IT27478/72A IT2747872A IT963412B IT 963412 B IT963412 B IT 963412B IT 27478/72 A IT27478/72 A IT 27478/72A IT 2747872 A IT2747872 A IT 2747872A IT 963412 B IT963412 B IT 963412B
- Authority
- IT
- Italy
- Prior art keywords
- semi
- manufacturing process
- memory matrix
- related manufacturing
- conductive memory
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000011159 matrix material Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
- H10D64/665—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of elemental metal contacting the insulator, e.g. tungsten or molybdenum
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16996171A | 1971-08-09 | 1971-08-09 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IT963412B true IT963412B (it) | 1974-01-10 |
Family
ID=22617925
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT27478/72A IT963412B (it) | 1971-08-09 | 1972-07-27 | Matrice di memoria a semicondutto ri e relativo procedimento di fabbricazione |
Country Status (10)
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| ES404184A1 (es) * | 1971-07-06 | 1975-06-01 | Ibm | Una disposicion de celula de memoria de acceso casual para calculadoras digitales. |
| DE2441385C3 (de) * | 1974-08-29 | 1981-05-07 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum Vergrößern des Lesesignals bei einem Ein- Transistor-Speicherelement |
| JPS51147226A (en) * | 1975-06-13 | 1976-12-17 | Nec Corp | Semiconductor memory device |
| JPS5811103B2 (ja) * | 1975-11-07 | 1983-03-01 | 株式会社日立製作所 | ハンドウタイメモリ |
| JPS5853512B2 (ja) * | 1976-02-13 | 1983-11-29 | 株式会社東芝 | 半導体記憶装置の製造方法 |
| GB1562650A (en) * | 1976-11-18 | 1980-03-12 | Fairchild Camera Instr Co | Memory cell for storing charge |
| IT1110947B (it) * | 1978-01-19 | 1986-01-13 | Sperry Rand Corp | Elemento di memoria ad accesso comandato |
| US4230954A (en) | 1978-12-29 | 1980-10-28 | International Business Machines Corporation | Permanent or semipermanent charge transfer storage systems |
| DE2912858A1 (de) * | 1979-03-30 | 1980-10-09 | Siemens Ag | Niederohmige leitung |
| JPH0782753B2 (ja) * | 1984-08-31 | 1995-09-06 | 三菱電機株式会社 | ダイナミックメモリ装置 |
-
1972
- 1972-06-23 GB GB2941972A patent/GB1374009A/en not_active Expired
- 1972-07-06 SE SE7208905A patent/SE384756B/xx unknown
- 1972-07-14 JP JP7008672A patent/JPS5314351B2/ja not_active Expired
- 1972-07-18 NL NL7209890A patent/NL7209890A/xx unknown
- 1972-07-26 FR FR7228829A patent/FR2148581B1/fr not_active Expired
- 1972-07-26 DE DE2236510A patent/DE2236510C3/de not_active Expired
- 1972-07-27 IT IT27478/72A patent/IT963412B/it active
- 1972-07-28 CH CH1133272A patent/CH534939A/de not_active IP Right Cessation
- 1972-08-09 BR BR5403/72A patent/BR7205403D0/pt unknown
- 1972-08-09 BR BR5394/72A patent/BR7205394D0/pt unknown
- 1972-08-21 AR AR243646A patent/AR200242A1/es active
Also Published As
| Publication number | Publication date |
|---|---|
| DE2236510A1 (de) | 1973-03-08 |
| FR2148581A1 (enrdf_load_stackoverflow) | 1973-03-23 |
| JPS4826437A (enrdf_load_stackoverflow) | 1973-04-07 |
| NL7209890A (enrdf_load_stackoverflow) | 1973-02-13 |
| FR2148581B1 (enrdf_load_stackoverflow) | 1980-03-21 |
| CH534939A (de) | 1973-03-15 |
| DE2236510C3 (de) | 1975-01-23 |
| AR200242A1 (es) | 1974-10-31 |
| GB1374009A (en) | 1974-11-13 |
| JPS5314351B2 (enrdf_load_stackoverflow) | 1978-05-17 |
| SE384756B (sv) | 1976-05-17 |
| BR7205394D0 (pt) | 1973-06-07 |
| BR7205403D0 (pt) | 1973-06-07 |
| DE2236510B2 (de) | 1974-05-22 |
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