NL7209890A - - Google Patents

Info

Publication number
NL7209890A
NL7209890A NL7209890A NL7209890A NL7209890A NL 7209890 A NL7209890 A NL 7209890A NL 7209890 A NL7209890 A NL 7209890A NL 7209890 A NL7209890 A NL 7209890A NL 7209890 A NL7209890 A NL 7209890A
Authority
NL
Netherlands
Application number
NL7209890A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7209890A publication Critical patent/NL7209890A/xx

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/04Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B12/00Dynamic random access memory [DRAM] devices
    • H10B12/30DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/60Electrodes characterised by their materials
    • H10D64/66Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/665Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of elemental metal contacting the insulator, e.g. tungsten or molybdenum

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Non-Volatile Memory (AREA)
NL7209890A 1971-08-09 1972-07-18 NL7209890A (enrdf_load_stackoverflow)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US16996171A 1971-08-09 1971-08-09

Publications (1)

Publication Number Publication Date
NL7209890A true NL7209890A (enrdf_load_stackoverflow) 1973-02-13

Family

ID=22617925

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7209890A NL7209890A (enrdf_load_stackoverflow) 1971-08-09 1972-07-18

Country Status (10)

Country Link
JP (1) JPS5314351B2 (enrdf_load_stackoverflow)
AR (1) AR200242A1 (enrdf_load_stackoverflow)
BR (2) BR7205403D0 (enrdf_load_stackoverflow)
CH (1) CH534939A (enrdf_load_stackoverflow)
DE (1) DE2236510C3 (enrdf_load_stackoverflow)
FR (1) FR2148581B1 (enrdf_load_stackoverflow)
GB (1) GB1374009A (enrdf_load_stackoverflow)
IT (1) IT963412B (enrdf_load_stackoverflow)
NL (1) NL7209890A (enrdf_load_stackoverflow)
SE (1) SE384756B (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0003413A3 (en) * 1978-01-19 1979-08-22 Sperry Corporation Improvements relating to semiconductor memories

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ES404184A1 (es) * 1971-07-06 1975-06-01 Ibm Una disposicion de celula de memoria de acceso casual para calculadoras digitales.
DE2441385C3 (de) * 1974-08-29 1981-05-07 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Vergrößern des Lesesignals bei einem Ein- Transistor-Speicherelement
JPS51147226A (en) * 1975-06-13 1976-12-17 Nec Corp Semiconductor memory device
JPS5811103B2 (ja) * 1975-11-07 1983-03-01 株式会社日立製作所 ハンドウタイメモリ
JPS5853512B2 (ja) * 1976-02-13 1983-11-29 株式会社東芝 半導体記憶装置の製造方法
GB1562650A (en) * 1976-11-18 1980-03-12 Fairchild Camera Instr Co Memory cell for storing charge
US4230954A (en) 1978-12-29 1980-10-28 International Business Machines Corporation Permanent or semipermanent charge transfer storage systems
DE2912858A1 (de) * 1979-03-30 1980-10-09 Siemens Ag Niederohmige leitung
JPH0782753B2 (ja) * 1984-08-31 1995-09-06 三菱電機株式会社 ダイナミックメモリ装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0003413A3 (en) * 1978-01-19 1979-08-22 Sperry Corporation Improvements relating to semiconductor memories

Also Published As

Publication number Publication date
DE2236510A1 (de) 1973-03-08
FR2148581A1 (enrdf_load_stackoverflow) 1973-03-23
JPS4826437A (enrdf_load_stackoverflow) 1973-04-07
FR2148581B1 (enrdf_load_stackoverflow) 1980-03-21
CH534939A (de) 1973-03-15
DE2236510C3 (de) 1975-01-23
AR200242A1 (es) 1974-10-31
GB1374009A (en) 1974-11-13
JPS5314351B2 (enrdf_load_stackoverflow) 1978-05-17
SE384756B (sv) 1976-05-17
BR7205394D0 (pt) 1973-06-07
IT963412B (it) 1974-01-10
BR7205403D0 (pt) 1973-06-07
DE2236510B2 (de) 1974-05-22

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