IT202100008036A1 - Striscia di connessione per dispositivi elettronici discreti e/o di potenza e dispositivo elettronico discreto e/o di potenza connesso mediante tale striscia di connessione - Google Patents

Striscia di connessione per dispositivi elettronici discreti e/o di potenza e dispositivo elettronico discreto e/o di potenza connesso mediante tale striscia di connessione Download PDF

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Publication number
IT202100008036A1
IT202100008036A1 IT102021000008036A IT202100008036A IT202100008036A1 IT 202100008036 A1 IT202100008036 A1 IT 202100008036A1 IT 102021000008036 A IT102021000008036 A IT 102021000008036A IT 202100008036 A IT202100008036 A IT 202100008036A IT 202100008036 A1 IT202100008036 A1 IT 202100008036A1
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IT
Italy
Prior art keywords
connection
strip
welding
support
plate
Prior art date
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IT102021000008036A
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English (en)
Inventor
Agatino Minotti
Original Assignee
St Microelectronics Srl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by St Microelectronics Srl filed Critical St Microelectronics Srl
Priority to IT102021000008036A priority Critical patent/IT202100008036A1/it
Priority to US17/701,352 priority patent/US20220320032A1/en
Priority to CN202210328965.8A priority patent/CN115148717A/zh
Priority to EP22165630.9A priority patent/EP4068351A3/en
Priority to CN202220725070.3U priority patent/CN217507322U/zh
Publication of IT202100008036A1 publication Critical patent/IT202100008036A1/it

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    • H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
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Description

DESCRIZIONE
del brevetto per invenzione industriale dal titolo:
?STRISCIA DI CONNESSIONE PER DISPOSITIVI ELETTRONICI DISCRETI E/O DI POTENZA E DISPOSITIVO ELETTRONICO DISCRETO E/O DI POTENZA CONNESSO MEDIANTE TALE STRISCIA DI CONNESSIONE?
La presente invenzione ? relativa ad una striscia di connessione per dispositivi elettronici di discreti e/o di potenza e dispositivo elettronico discreto e/o di potenza connesso mediante tale striscia.
Come noto, le piastrine (?dice?) di materiale semiconduttore integranti dispositivi elettronici (siano essi componenti discreti, circuiti pi? complessi o componenti micro-elettro-meccanici) vengono fissati ad un supporto portante regioni di connessione e collegati elettricamente a tali regioni di connessione ed eventualmente ad altri dispositivi di potenza o discreti attraverso strutture di connessione formate da fili o da strisce conduttive (cosiddette mollette o ?clip?).
Nel caso che il dispositivo elettronico sia di potenza, le strutture di connessione sono progettate in modo da avere una capacit? di corrente adeguata rispetto alla corrente richiesta. Tali strutture di connessione sono progettate inoltre in modo da avere durata (?endurance?) adeguata tenendo conto della applicazione e delle condizioni operative previste.
Ad esempio, la figura 1 mostra un dispositivo comprendente due piastrine 1, di materiale semiconduttore, integranti ciascuna un proprio componente di potenza, un circuito integrato o altro elemento elettronico o microelettro-meccanico. Le piastrine 1 sono fissate a un supporto 3, ad esempio un circuito stampato, tipicamente di materiale isolante, portante regioni di contatto 4, di materiale conduttivo, ad esempio metallo, quale rame. Le piastrine 1 sono fissate al supporto 3 tramite regioni di incollaggio 5, ad esempio di solder, conduttivo o non conduttivo.
In figura 1, le piastrine 1 sono collegate a rispettive regioni di contatto 4 tramite primi fili 7 (uno mostrato per ciascuna piastrina 1); inoltre le piastrine 1 sono collegate reciprocamente attraverso secondi fili 8.
La figura 2 mostra un altro sistema, in cui due piastrine (indicate ancora con 1) sono collegate reciprocamente Ne caso di fili, questi sono generalmente di alluminio e sono fissati tramite saldatura; le clip sono generalmente di rame o bronzo in modo da avere sufficiente rigidezza in campo elastico. La saldatura pu? essere una saldatura per fusione (?soldering?) o saldatura a polveri (sinterizzazione, ?sintering?).
Le figure 3-6 mostrano esempi specifici di realizzazione del collegamento mostrato in figura 2.
Ad esempio, in figura 3, due piastrine 11 sono fissate ad un supporto 12, qui un multistrato DBC (Direct Bonded Copper), tramite uno strato di incollaggio 13. Lo strato superiore del supporto 12, opportunamente sagomato, forma una regione di contatto piastrine 15 e regioni di contatto esterne 16. Fili 14, di spessore variabile, a seconda delle capacit? di corrente desiderate, accoppiano reciprocamente le piastrine 11 e alle regioni di contatto esterne 16.
In figura 4, la superficie superiore di una piastrina 17 ? collegata a regioni di contatto esterne 18 mediante clip superiori 19. Una clip inferiore 20 accoppia la superficie inferiore della piastrina 17 ad una piastra (plate?) 22 fissata ad un supporto 23. Le clip 19, 20 sono generalmente pre-piegate a partire da una striscia piana, in modo da formare una pluralit? di anse.
La figura 5 mostra una piastrina 25, incollata (?bonded?), tramite uno strato di solder inferiore 27, ad un supporto 26 facente parte di una ?leadframe? metallica, formante anche una prima e una seconda regione di contatto esterno 30, 33. Una clip metallica 29, tipicamente di rame, collega elettricamente la piastrina di potenza 25 alla prima regione di contatto esterno 30. La clip metallica 29 comprende una prima porzione piana 29A incollata alla piastrina di potenza 25 tramite uno strato di solder superiore 28, di materiale conduttivo, occupante buona parte dell'area della piastrina 25, e una seconda porzione piana 29B, incollata alla prima regione di contatto 30 tramite un ulteriore strato di solder 31, anch'esso di materiale conduttivo. Un filo 32, di alluminio, collega una diversa porzione della superficie della piastrina di potenza 25 alla seconda regione di contatto esterno 33 e ha capacit? di corrente inferiore rispetto alla clip metallica 29.
La figura 6 mostra il fissaggio di una piastrina 35 ad un supporto 36 ceramico formato come multistrato. Specificamente, il supporto 36 presenta uno strato superiore 40 che ? conduttivo, ad esempio rivestito con lega di argento, e sagomato in modo da formare regioni di contatto esterno 41A e una regione di contatto piastrina 41B. La piastrina 35 ? fissata alla regione di contatto piastrina 41B attraverso una prima regione adesiva 42 formata da una pasta di saldatura pre-applicata (?pre-applied sinter plaste?). Una seconda regione adesiva 43 ? applicata fra la superficie superiore della piastrina 35 e un foglio (?foil?) di rame 45 dotato di una placcatura, ad esempio di NiPdAu, non mostrata. Fili di connessione (?bonding wires?) di potenza 46, di rame, sono saldati al foglio di rame 45 e ad alcune delle regioni di contatto esterno 41B, per il collegamento elettrico della piastrina 35. Un ulteriore filo di connessione 47, di alluminio, collega una piazzola di contatto 48 della piastrina 35 ad una rispettiva regione di contatto esterno 41A.
In tutte le soluzioni di collegamento elettrico mostrate, esiste il problema della durata della saldatura. Infatti, a causa del differente coefficiente di espansione termica (coefficient of thermal expansion, CTE) fra i fili o le clip di connessione e la piastrina di silicio, la saldatura pu? essere soggetta a degrado e il filo o clip si pu? staccare (fenomeno di distacco ?bond off?), in particolare in caso di escursioni termiche e/o sollecitazioni meccaniche.
Generalmente, si ? visto che le saldature di tipo soldering presentano maggiore resilienza rispetto alle saldature sinterizzate, ma nessuna delle due tecniche fornisce livelli di affidabilit? sufficienti in alcune applicazioni, ad esempio in campo automobilistico.
Per migliorare l'adesione e la tenuta nel tempo, sono state sviluppate tecniche basate su wet metal, ovvero sulla realizzazione di una pila di strati metallici (tipicamente Ti-Ni-Au o Ag) che permette alla parte superiore della piastrina di essere resa bagnabile e saldabile ad una clip. Tale pila di materiali pu? essere prevista anche sul lato posteriore della piastrina, per poterla fissare al supporto 36. Tali tecniche sono tuttavia costose e richiedono l'uso di un materiale di saldatura costoso.
Scopo della presente invenzione ? mettere a disposizione una soluzione per la connessione elettrica di piastrine e dispositivi a semiconduttore che superi gli inconvenienti della tecnica nota.
Secondo la presente invenzione vengono realizzati una striscia di connessione, un dispositivo elettronico e un metodo di saldatura, come definiti nelle rivendicazioni allegate.
Per una migliore comprensione della presente invenzione ne viene ora descritta una forma di realizzazione, a puro titolo di esempio non limitativo, con riferimento ai disegni allegati, nei quali:
- la figura 1 ? una vista laterale di un sistema formato da due piastrine semiconduttrici;
- la figura 2 ? una vista laterale di un altro sistema formato da due piastrine semiconduttrici;
- la figura 3 ? una vista prospettica di una soluzione di connessione elettrica delle piastrine semiconduttrici di figura 2;
- la figura 4 ? una vista prospettica di una un'altra soluzione di connessione elettrica delle piastrine semiconduttrici di figura 2;
- la figura 5 ? una vista laterale mostrante un'altra possibilit? di connessione di una piastrina semiconduttrice;
- la figura 6 ? una vista prospettica di una piastrina semiconduttrice;
- la figura 7 ? una vista laterale di una striscia utilizzabile per la connessione elettrica di un dispositivo elettronico;
- la figura 8 ? una sezione trasversale della striscia di connessione di figura 7, pesa lungo la linea di sezione VIII-VIII di figura 7;
- la figura 9 ? una vista prospettica da basso della striscia di connessione di figura 7;
- la figura 10 ? una vista laterale della striscia di connessione di figura 7, in due fasi di fissaggio ad un supporto;
- la figura 11 ? una vista prospettica di un supporto sagomato usabile per la connessione di un dispositivo di potenza;
- la figura 12 ? una vista prospettica delle fasi di saldatura della striscia di connessione di figura 7 al supporto di figura 11; e
- la figura 13 ? una vista laterale delle fasi di saldatura della figura 12.
Le figure 7-9 mostrano una striscia di connessione 50, chiamata anche clip, utilizzabile per la connessione elettrica di una o pi? piastrine a semiconduttore fra di loro e/o a regioni di contatto. La o le piastrine a semiconduttore possono integrare un componente elettronico discreto, un circuito elettrico o altro componente elettronico e/o micro-elettro-meccanico. Tipicamente, almeno una delle piastrine integra un componente di potenza e/o a alta corrente. Ad esempio, la o le piastrine possono integrare dispositivi di potenza quali IGBT, diodi, transistori MOS ad alta o bassa tensione, dispositivi a base di silicio o carburo di silicio.
Nell'esempio di realizzazione mostrato nelle figure 7-13, la striscia di connessione 50 ? utilizzata per contattare due piastrine (indicate con 72, 73 nelle figure 10-13) fra di loro e ad un supporto 70; tuttavia la striscia di connessione 50 pu? essere utilizzata per contattare una singola piastrina ad una o pi? regioni di contatto su un supporto o semplicemente per contattare pi? piastrine reciprocamente.
In dettaglio, la striscia di connessione 50 ? di materiale elastico, conduttivo, e ha forma allungata, piegata in modo da definire una forma complessivamente arcuata, a ?balestra?.
In condizione non deformata, prima della saldatura al supporto 70, la striscia di connessione 50 presenta un lato concavo 50A e un lato convesso 50B ed ? destinata ad essere fissata al supporto 70 sul suo lato convesso 50B, come discusso pi? in dettaglio in seguito.
La striscia di connessione 50 ? dotata di estremit? 51 ed ? destinata ad essere fissata al supporto 70 in corrispondenza delle estremit? 51 in modo da bloccare le piastrine 72, 73 contro il supporto 70.
Nell'esempio di realizzazione mostrato, la striscia di connessione 50 ? formata da una successione di porzioni piatte. Anche le estremit? 51 sono piatte, per consentire la saldatura.
In dettaglio, la striscia di connessione 50 presenta, almeno sul lato convesso 50B, zone sporgenti e zone rientranti. Nell'esempio di realizzazione mostrato, sia il lato concavo 50A sia il lato convesso 50B presentano zone sporgenti e zone rientranti.
In particolare, le zone sporgenti e le zone rientranti sul lato concavo 50A sono indicate con 52A, rispettivamente 53A; le zone sporgenti e le zone rientranti sul lato convesso 50B sono indicate con 52B, rispettivamente 53B. Inoltre, a ciascuna zona sporgente 52A sul lato concavo 50A corrisponde una zona rientrante 53B sul lato convesso 50B e a ciascuna zona rientrante 52A sul lato concavo 50A corrisponde una zona sporgente 52B sul lato convesso 50B.
In particolare, in figura 7, in cui la striscia di connessione 50 ? destinata a contattare quattro piazzole di contatto, disposte su due piastrine diverse (come descritto pi? avanti con riferimento alla figura 11), il lato convesso 50B presenta quattro zone sporgenti 52B, intervallate da tre zone rientranti 53B; le zone sporgenti 52B sul lato convesso 50B corrispondono a zone rientranti 53A sul lato concavo 50A.
Qui, le estremit? 51 sono costituite da zone sporgenti 52B sul lato convesso 50B.
Le zone sporgenti 52B sul lato convesso 50B sono approssimativamente piatte, in modo da poter essere premute in piano contro piazzole di contatto (si veda a figura 11) sulla superficie delle piastrine 72, 73 e sul supporto 70, come spiegato in seguito.
La striscia di connessione 50 delle figure 7 e 8 ? costituita da un corpo elastico 61 rivestito da uno strato di contatto 62.
Il corpo elastico 61 pu? essere di rame o di una lega di rame, quale bronzo, ed avere una sezione trasversale rettangolare (si veda la figura 8) di spessore compreso fra 300 ?m e 1 mm, in particolare fra 300 e 800 ?m.
Lo strato di contatto 62 ? di materiale pi? morbido del corpo elastico 61; ad esempio, esso pu? essere di alluminio ed avere uno spessore minore dello spessore del corpo elastico 61, ad esempio compreso fra 50 ?m e 100 ?m. In alternativa, esso potrebbe essere di lega di argento, con uno spessore compreso fra 3 e 5 ?m.
La striscia di connessione 50 pu? avere una larghezza W (figura 8) compresa fra 2 e 5 mm.
La striscia di connessione 50 pu? essere ottenuta laminando uno strato di alluminio a caldo su rame o bronzo e tagliandolo in strisce, che vengono avvolte in bobina. La bobina viene quindi piegata per ottenere le zone sporgenti e le zone rientranti 52A, 52B, 53A, 53B e singolata.
La figura 10 mostra, con linea continua, la striscia di connessione 50 in condizione non deformata, prima della saldatura al supporto 70, e, con linea tratteggiata, in condizione deformata, dopo la saldatura al supporto 70.
Il supporto 70 ? qui formato da un multistrato, ad esempio un DBC (Direct Bonded Copper), e su di esso sono state gi? fissate le due piastrine 72, 73.
Nell'esempio mostrato, si veda anche la figura 11, il substrato 70 comprende uno strato inferiore 80, di materiale conduttivo quale rame; uno strato intermedio 81, elettricamente isolante, tipicamente di materiale ceramico, quale allumina (Al2O3) o nitruro di alluminio (AlN); ed uno strato superiore 82, di materiale conduttivo, quale rame. Lo strato superiore 82 ? opportunamente sagomato in modo da formare regioni di contatto. Nell'esempio mostrato, lo strato superiore 82 forma una regione di contatto di piastrina, indicata con 83A, su cui sono state saldate le piastrine 72, 73, e due regioni di contatto di connessione, indicate con 83B.
La regione di contatto di piastrina 83A e le regioni di contatto di connessione 83B sono allineate reciprocamente, in modo che la striscia di connessione 50 possa essere disposta al di sopra e a contatto sia con entrambe le regioni di contatto di connessione 83B, sia con le piastrine 72, 73.
Le piastrine 72, 73 presentano piazzole di contatto (?pads?) 85 (nell'esempio mostrato, la prima piastrina 72 presenta una piazzola di contatto 85 e la seconda piastrina 73 presenta tre piazzole di contatto 85); le piazzole di contatto 85 sono tipicamente di alluminio, ad esempio con uno spessore di 4-9 ?m.
Come indicato sopra e visibile nella figura 10, la striscia di connessione 50 viene disposta con il lato convesso 50B rivolto verso il supporto 70 e verso le piastrine 72, 73, e viene saldata al supporto 70.
In particolare, la striscia di connessione 50 viene disposta in modo che le zone sporgenti 52B sul suo lato convesso 50B siano posizionate in corrispondenza delle piastrine 72 e 73 e pi? precisamente, delle piazzole di contatto 85 e che le estremit? 51 si dispongano in corrispondenza delle regioni di contatto di connessione 83B. Per consentire la saldatura, la striscia di connessione 50 viene pressata alle estremit? 51 e si deforma, appiattendosi.
Dopo la saldatura, il dispositivo formato dalle piastrine 72, 73, dal supporto 70 e dalla striscia di connessione 50 e indicato con 95 pu? essere incapsulato.
In questo modo, la striscia di connessione 50 realizza un contatto elettrico fra le piazzole di contatto 85 delle piastrine 72 e 73 e le regioni di contatto di connessione 83B del supporto 70, senza che materiale di saldatura intermedio sia presente fra la striscia di connessione 50 e le piastrine 72, 73.
A seguito della saldatura, e per effetto della pressione elastica esercitata dalla striscia di connessione 50, e specificamente delle zone sporgenti 52B (figure 7 e 9), sulle piazzole di contatto 85, lo strato di contatto 62 si deforma, adattandosi alla microstruttura delle piazzole di contatto 85 delle piastrine 72, 73 (che possono anche loro deformarsi in parte), creando un contatto meccanico intimo fra di essi e quindi un ottimo contatto elettrico.
Il processo di saldatura della striscia di connessione 50 pu? essere effettuato ad ultrasuoni, come sotto descritto con riferimento alle figure 12-13.
In particolare, la saldatura pu? essere effettuata utilizzando un apparecchio a ultrasuoni quale un sonotrodo di saldatura ultrasonica (?UltraSonic welding sonotrode?) avente una testa di saldatura 90.
La testa di saldatura 90 pu? avere un sistema di manipolazione, ad esempio di aspirazione, per prelevare e trattenere la striscia di connessione 50 ed ha larghezza utile approssimativamente pari a quella della striscia di connessione 50 stesse. In particolare, la testa di saldatura 90 ? dotata di porzioni di saldatura 91 poste a distanza tale da posizionarsi in corrispondenza delle estremit? 51 della striscia di connessione 50 e da esercitare una pressione su tali estremit? 51 durante la saldatura.
Ad esempio, le porzioni di saldatura 91 della testa di saldatura 90 possono essere realizzate di carburo di tungsteno ed applicare una pressione compresa fra 3 e 5MPa a 50 KHz. La saldatura pu? essere effettuata a temperatura ambiente; in tal modo, eventuale calore che si sviluppa (generalmente inferiore a 200?C) ? tale da non danneggiare le piastrine 72, 73, soprattutto se realizzate in tecnologia in carburo di silicio. Inoltre, dato che la pressione di saldatura viene applicata solo sulle estremit? 51 della striscia di connessione 50, e l'unica pressione a cui sono sottoposte le piastrine 72, 73 ? quella elastica dovuta alla striscia di connessione 50, dopo la saldatura, le piastrine 72, 73 non vengono danneggiate.
La striscia di connessione 50 e il dispositivo 95 qui descritti presentano numerosi vantaggi.
La striscia di connessione 50 ? infatti realizzabile a costo ridotto, presenta elevata durata e affidabilit?. Essa ? in grado di portare elevate correnti, minimizzando effetti parassiti, ha elevata resistenza alle temperature e pu? essere saldata semplicemente, in modo ultrasonico ma anche per sinterizzazione.
Il dispositivo 95, includente la striscia di connessione 50, presenta elevata affidabilit? e tenuta delle connessioni.
Infatti, la piastrina o le piastrine sono trattenute in modo elastico, non plastico, e quindi il bloccaggio ? particolarmente resistente a vibrazioni e sollecitazioni meccaniche anche nel tempo.
Inoltre, non esistendo materiale di fissaggio fra la striscia di connessione 50 e le piastrine 72, 73, che vengono mantenute in posizione solo dalla pressione della striscia di connessione 50, non vi sono regioni di materiale che possono degradarsi con la temperatura, in particolare in presenza di salti di temperatura, come nel caso di connessione a filo, o di saldatura con materiale di riporto o senza materiale di riporto, ma fra materiali diversi.
Il fatto che le piazzole di contatto 85, di alluminio, siano a contatto con porzioni dello stesso materiale dello strato di contatto 62 fa s? che non ci siano differenze di coefficiente termico fra di essi, eliminando una causa di rottura in caso di stress termici per effetto dei diversi coefficienti di espansione termica CTE.
Lo stress elastico generato dalla deformazione mantiene la striscia di connessione 50 a contatto con le piazzole di contatto 85 delle piastrine 72, 73 in modo affidabile nel tempo.
Il processo di saldatura pu? essere eseguito a costi ridotti, in particolare rispetto al processo con wet metal noto sopra descritto.
Risulta infine chiaro che alla striscia di connessione, al dispositivo elettronico e al metodo di connessione elettrica qui descritti ed illustrati possono essere apportate modifiche e varianti, senza per questo uscire dall?ambito protettivo della presente invenzione, come definita nelle rivendicazioni allegate.
Ad esempio, la striscia di connessione pu? essere realizzata di altri materiali elastici conduttivi; la saldatura delle estremit? pu? avvenire per sinterizzazione, invece che per ultrasuoni; la piastrina pu? integrare componenti e circuiti elettronici di diverso tipo o essere costituite da dispositivi incapsulati dotati di regioni di contatto esterne da connettere elettricamente in sistemi complessi e/o a supporti.
Inoltre, il corpo elastico 61 pu? essere rivestito con lo strato di contatto solo in alcune porzioni, ad esempio nella zona di contatto con la o le piastrine 72, 73 e alle estremit? 5.
Ad esempio, la piastrina potrebbe non essere saldata ma trattenuta in contatto con il supporto solo dalla forza elastica della striscia di connessione.

Claims (15)

RIVENDICAZIONI
1. Striscia di connessione (50), di materiale elastico, conduttivo, la striscia di connessione (50) avendo forma arcuata avente un lato concavo (50A) e un lato convesso (50B) ed essendo dotata di estremit? di saldatura (51) piatte.
2. Striscia di connessione secondo la rivendicazione precedente, in cui il lato convesso (50B) presenta almeno una zona sporgente (52B) di connessione piastrina, due zone sporgenti di connessione supporto (51) e due zone rientranti (53B), le zone sporgenti di connessione supporto formando le estremit? di connessione (51) della striscia di connessione (50), e in cui ciascuna zona rientrante (53B) si estende fra la zona sporgente di connessione piastrina (52B) ed una rispettiva zona sporgente di connessione supporto (51).
3. Striscia di connessione secondo la rivendicazione 1 o 2, comprendente un corpo elastico (61) rivestito su un lato da uno strato di contatto (62).
4. Striscia di connessione secondo la rivendicazione precedente, in cui il corpo elastico (61) ? di rame o di una lega di rame, quale bronzo.
5. Striscia di connessione secondo la rivendicazione 3 o 4, in cui lo strato di contatto (62) ? di materiale pi? morbido del corpo elastico (61), in particolare di alluminio o lega di argento.
6. Striscia di connessione secondo la rivendicazione precedente, cui in cui il corpo elastico (61) ha spessore compreso fra 300 ?m e 1 mm e lo strato di contatto (62) ha spessore compreso fra 50 e 100 ?m in caso di alluminio e 3-5 ?m in caso di lega di argento.
7. Dispositivo elettronico, comprendente un supporto (70), almeno una piastrina (72, 73) comprendente materiale semiconduttore ed una striscia di connessione (50), in cui la striscia di connessione (50) ? di materiale elastico, conduttivo, avente un primo e un secondo lato (50B, 50A), il primo lato (50B) essendo a contatto con l'almeno una piastrina (72, 73), e in cui la striscia di connessione (50) ? inoltre dotata di estremit? di saldatura (51) piatte fissate al supporto (70) e preme elasticamente contro l'almeno una piastrina, connettendo elettricamente l'almeno una piastrina (72, 73) al supporto (70).
8. Dispositivo elettronico secondo la rivendicazione precedente, in cui il primo lato (50B) della striscia di connessione (50) presenta almeno una zona sporgente di connessione piastrina (52B), due zone sporgenti di connessione supporto (51) e due zone rientranti (53B), le zone sporgenti di connessione supporto formando le estremit? di connessione (51) della striscia di connessione (50), ciascuna zona rientrante (53B) estendendosi fra la zona sporgente di connessione piastrina (52B) ed una rispettiva zona sporgente di connessione supporto (51), e in cui la zona sporgente di connessione piastrina ? in contatto elastico ed elettrico con l'almeno una piastrina (72, 73).
9. Dispositivo elettronico secondo la rivendicazione 7 o 8, in cui la striscia di connessione (50) comprende un corpo elastico (61) rivestito su un lato da uno strato di contatto (62), in cui lo strato di contatto (62) ? in contatto elastico ed elettrico con l'almeno una piastrina (72, 73) e definisce il primo lato (50B) della striscia di connessione.
10. Dispositivo elettronico secondo la rivendicazione precedente, in cui il corpo elastico (61) ? di rame o di una lega di rame, quale bronzo, e lo strato di contatto (62) ? di alluminio o di lega di argento.
11. Dispositivo elettronico secondo la rivendicazione precedente, in cui lo strato di contatto (62) ha spessore minore del corpo elastico (61).
12. Dispositivo elettronico secondo la rivendicazione precedente, in cui il corpo elastico (61) ha spessore compreso fra 300 ?m e 1 mm e lo strato di contatto (62) ha spessore compreso fra 50 e 100 ?m in caso di alluminio e 3-5 ?m in caso di lega di argento.
13. Metodo di saldatura di almeno una piastrina (72, 73) ad un supporto (70) attraverso una striscia di connessione (50), l'almeno una piastrina (72, 73) comprendendo materiale semiconduttore e la striscia di connessione (50) essendo di materiale elastico, conduttivo, avendo forma arcuata, con un lato concavo e un lato convesso (50A, 50B), ed essendo dotata di estremit? di saldatura (51), il metodo comprendendo:
disporre l'almeno una piastrina (72, 73) sul supporto (70);
disporre la striscia di connessione (50) sull'almeno una piastrina (72, 73), con il lato convesso (50B) rivolto verso l'almeno una piastrina;
deformare la striscia di connessione (50) in modo da portare le estremit? di saldatura (51) a contatto con il supporto (70), e
saldare le estremit? di saldatura (51) della striscia di connessione (50) al supporto (70) in modo che la striscia di connessione (50) in contatto elettrico diretto con e preme elasticamente l'almeno una piastrina (72, 73) contro il supporto (70).
14. Metodo secondo la rivendicazione precedente, in cui saldare le estremit? di saldatura (51) comprende saldare a ultrasuoni.
15. Metodo secondo la rivendicazione 13, in cui saldare le estremit? di saldatura (51) comprende saldare tramite un processo di sinterizzazione.
IT102021000008036A 2021-03-31 2021-03-31 Striscia di connessione per dispositivi elettronici discreti e/o di potenza e dispositivo elettronico discreto e/o di potenza connesso mediante tale striscia di connessione IT202100008036A1 (it)

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US17/701,352 US20220320032A1 (en) 2021-03-31 2022-03-22 Connecting strip for discrete and power electronic devices
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050230820A1 (en) * 2004-04-16 2005-10-20 Thomas Licht Power semiconductor arrangement
US20090067131A1 (en) * 2007-09-12 2009-03-12 Denso Corporation Electronic device mounting structure
EP2372763A2 (en) * 2010-04-02 2011-10-05 Hitachi Ltd. Power semiconductor module
US20190333874A1 (en) * 2018-04-26 2019-10-31 Infineon Technologies Ag Semiconductor device comprising a composite material clip

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8022558B2 (en) * 2009-02-13 2011-09-20 Infineon Technologies Ag Semiconductor package with ribbon with metal layers
US10242938B2 (en) * 2017-05-16 2019-03-26 Infineon Technologies Americas Corp. Integrated shunt in circuit package

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050230820A1 (en) * 2004-04-16 2005-10-20 Thomas Licht Power semiconductor arrangement
US20090067131A1 (en) * 2007-09-12 2009-03-12 Denso Corporation Electronic device mounting structure
EP2372763A2 (en) * 2010-04-02 2011-10-05 Hitachi Ltd. Power semiconductor module
US20190333874A1 (en) * 2018-04-26 2019-10-31 Infineon Technologies Ag Semiconductor device comprising a composite material clip

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