IT1298182B1 - Metodo e circuito per rilevare la temperatura di giunzione tj di dispositivi a semiconduttori di potenza a gate mos - Google Patents

Metodo e circuito per rilevare la temperatura di giunzione tj di dispositivi a semiconduttori di potenza a gate mos

Info

Publication number
IT1298182B1
IT1298182B1 ITMI980111A IT1298182B1 IT 1298182 B1 IT1298182 B1 IT 1298182B1 IT MI980111 A ITMI980111 A IT MI980111A IT 1298182 B1 IT1298182 B1 IT 1298182B1
Authority
IT
Italy
Prior art keywords
detecting
circuit
power devices
junction temperature
semiconductor power
Prior art date
Application number
Other languages
English (en)
Italian (it)
Inventor
Bruno C Nadd
Original Assignee
Int Rectifier Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Int Rectifier Corp filed Critical Int Rectifier Corp
Publication of ITMI980111A1 publication Critical patent/ITMI980111A1/it
Application granted granted Critical
Publication of IT1298182B1 publication Critical patent/IT1298182B1/it

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
    • G01K7/18—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a linear resistance, e.g. platinum resistance thermometer
    • G01K7/20—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a linear resistance, e.g. platinum resistance thermometer in a specially-adapted circuit, e.g. bridge circuit
    • G01K7/21—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a linear resistance, e.g. platinum resistance thermometer in a specially-adapted circuit, e.g. bridge circuit for modifying the output characteristic, e.g. linearising
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/01—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions
    • G01K7/015—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions using microstructures, e.g. made of silicon
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
    • G01K7/22—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a non-linear resistance, e.g. thermistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
    • H01L29/7804—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device the other device being a pn-junction diode
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K2217/00—Temperature measurement using electric or magnetic components already present in the system to be measured
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601—Structure
    • H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/4901—Structure
    • H01L2224/4903—Connectors having different sizes, e.g. different diameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49562—Geometry of the lead-frame for devices being provided for in H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nonlinear Science (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
IT98MI000111 1997-02-12 1998-01-23 Metodo e circuito per rilevare la temperatura di giunzione tj di dispositivi a semiconduttori di potenza a gate mos IT1298182B1 (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US79883597A 1997-02-12 1997-02-12

Publications (2)

Publication Number Publication Date
ITMI980111A1 ITMI980111A1 (it) 1999-07-23
IT1298182B1 true IT1298182B1 (it) 1999-12-20

Family

ID=25174399

Family Applications (1)

Application Number Title Priority Date Filing Date
IT98MI000111 IT1298182B1 (it) 1997-02-12 1998-01-23 Metodo e circuito per rilevare la temperatura di giunzione tj di dispositivi a semiconduttori di potenza a gate mos

Country Status (8)

Country Link
JP (1) JP2846309B2 (de)
KR (1) KR19980070752A (de)
DE (1) DE19805734A1 (de)
FR (1) FR2759456B1 (de)
GB (1) GB2322709B (de)
IT (1) IT1298182B1 (de)
SG (1) SG55452A1 (de)
TW (1) TW385548B (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10023950A1 (de) * 2000-05-16 2001-11-22 Bosch Gmbh Robert Halbleiter-Bauelement
JP3721119B2 (ja) * 2001-11-08 2005-11-30 株式会社東芝 温度センサ
DE10220587B4 (de) 2002-05-08 2007-07-19 Infineon Technologies Ag Temperatursensor für MOS-Schaltungsanordnung
JP4681911B2 (ja) * 2005-02-25 2011-05-11 三菱電機株式会社 電力用半導体装置
CN100374872C (zh) * 2005-10-14 2008-03-12 北京工业大学 半导体pn结二极管器件的温升和热阻测量方法及装置
JP2009240024A (ja) * 2008-03-26 2009-10-15 Denso Corp 温度検出装置
DE102008023217A1 (de) 2008-05-19 2009-11-26 Friedrich-Alexander-Universität Erlangen-Nürnberg Elektrisches Verfahren zur ortsbezogenen Betriebstemperatureinstellung eines MOS-gesteuerten Halbleiterleistungsbauelementes und Bauelement zur Ausführung des Verfahrens
US20110182324A1 (en) * 2008-05-19 2011-07-28 X-Fab Semiconductor Foundries Ag Operating temperature measurement for an mos power component, and mos component for carrying out the method
DE102008023215A1 (de) * 2008-05-19 2009-12-03 Friedrich-Alexander-Universität Erlangen-Nürnberg Verfahren zur Betriebstemperatursteuerung eines MOS-gesteuerten Halbleiterleistungsbauelementes und Bauelement zur Ausführung des Verfahrens
AU2010206053B2 (en) 2009-07-31 2014-08-07 ResMed Pty Ltd Wire Heated Tube with Temperature Control System, Tube Type Detection, and Active Over Temperature Protection for Humidifier for Respiratory Apparatus
DE102012006009B4 (de) 2012-03-24 2024-06-13 Volkswagen Aktiengesellschaft Verfahren und Vorrichtung zur Bestimmung einer Sperrschichttemperatur eines Halbleiterbauelements
CN102928109A (zh) * 2012-10-25 2013-02-13 重庆长安汽车股份有限公司 一种信号采集电路
DE102012222481A1 (de) * 2012-12-06 2014-06-12 Robert Bosch Gmbh Verfahren zum Ermitteln einer Sperrschichttemperatur eines Leistungshalbleiters unter Berücksichtigung der Degradation und Mittel zu dessen Implementierung
NZ743034A (en) 2013-02-01 2019-12-20 ResMed Pty Ltd Wire heated tube with temperature control system for humidifier for respiratory apparatus
CN103323135B (zh) * 2013-06-09 2014-12-03 广东明阳龙源电力电子有限公司 一种igbt温度检测电路
DE102015104990B4 (de) * 2015-03-31 2020-06-04 Infineon Technologies Austria Ag Verbindungshalbleitervorrichtung mit einem Abtastlead
CN105929316A (zh) * 2016-07-10 2016-09-07 北京工业大学 多路igbt结温及热疲劳实时监控系统
CN106501699B (zh) * 2016-10-20 2019-02-19 北京工业大学 一种饱和状态下双极晶体管结温的实时测量方法
EP3598505B1 (de) * 2018-07-19 2023-02-15 Mitsubishi Electric R&D Centre Europe B.V. Temperaturschätzung eines leistungshalbleiterbauelements
EP3690412B1 (de) * 2019-02-04 2022-06-15 EM Microelectronic-Marin SA Funkelrauschenreduzierung in einer temperatursensoranordnung

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5728228A (en) * 1980-07-28 1982-02-15 Seiko Epson Corp Semiconductor integrated circuit
DE3150013A1 (de) * 1981-12-17 1983-06-23 Datron-Electronic Pichl & Schulte KG, 6109 Mühltal "verfahren und vorrichtung zur automatisierten justierung (eichung) von messgeraeten und wandlern pysikalischer eingangsgroessen"
JPS59225324A (ja) * 1983-06-06 1984-12-18 Terumo Corp 電子温度計の製造方法
JPS60127433A (ja) * 1983-12-13 1985-07-08 Toshiba Corp 温度検出装置の校正方法
JPH0693485B2 (ja) * 1985-11-29 1994-11-16 日本電装株式会社 半導体装置
GB2191292B (en) * 1986-06-07 1990-02-21 Thomas James Allen Measuring equipment
GB2291742B (en) * 1993-09-14 1996-08-28 Int Rectifier Corp Power MOS-gated device with over-temperature protection
US5497285A (en) * 1993-09-14 1996-03-05 International Rectifier Corporation Power MOSFET with overcurrent and over-temperature protection

Also Published As

Publication number Publication date
JP2846309B2 (ja) 1999-01-13
FR2759456B1 (fr) 1999-07-02
TW385548B (en) 2000-03-21
KR19980070752A (ko) 1998-10-26
ITMI980111A1 (it) 1999-07-23
GB2322709B (en) 2000-11-01
DE19805734A1 (de) 1998-08-20
FR2759456A1 (fr) 1998-08-14
SG55452A1 (en) 1998-12-21
GB9801403D0 (en) 1998-03-18
JPH10246676A (ja) 1998-09-14
GB2322709A (en) 1998-09-02

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