GB2322709A - Method and circuit to sense temperature in power semiconductor devices - Google Patents

Method and circuit to sense temperature in power semiconductor devices Download PDF

Info

Publication number
GB2322709A
GB2322709A GB9801403A GB9801403A GB2322709A GB 2322709 A GB2322709 A GB 2322709A GB 9801403 A GB9801403 A GB 9801403A GB 9801403 A GB9801403 A GB 9801403A GB 2322709 A GB2322709 A GB 2322709A
Authority
GB
United Kingdom
Prior art keywords
resistor
power semiconductor
temperature
circuit
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB9801403A
Other versions
GB2322709B (en
GB9801403D0 (en
Inventor
Bruno C Nadd
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies Americas Corp
Original Assignee
International Rectifier Corp USA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Rectifier Corp USA filed Critical International Rectifier Corp USA
Publication of GB9801403D0 publication Critical patent/GB9801403D0/en
Publication of GB2322709A publication Critical patent/GB2322709A/en
Application granted granted Critical
Publication of GB2322709B publication Critical patent/GB2322709B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
    • G01K7/18—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a linear resistance, e.g. platinum resistance thermometer
    • G01K7/20—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a linear resistance, e.g. platinum resistance thermometer in a specially-adapted circuit, e.g. bridge circuit
    • G01K7/21—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a linear resistance, e.g. platinum resistance thermometer in a specially-adapted circuit, e.g. bridge circuit for modifying the output characteristic, e.g. linearising
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/01—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions
    • G01K7/015—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions using microstructures, e.g. made of silicon
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
    • G01K7/22—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a non-linear resistance, e.g. thermistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
    • H01L29/7804—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device the other device being a pn-junction diode
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K2217/00—Temperature measurement using electric or magnetic components already present in the system to be measured
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601—Structure
    • H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/4901—Structure
    • H01L2224/4903—Connectors having different sizes, e.g. different diameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49562—Geometry of the lead-frame for devices being provided for in H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Abstract

A polysilicon (10) is integrated into an MOS-gated power semiconductor, and an integrated circuit is employed to sense the junction temperature of the power semiconductor device. To compensate for process variations in the manufacture of the polysilicon resistor, the integrated circuit (20) is self-trimming to adapt to the resistor (10). The circuit determines the optimum current to match the respective room temperature resistance of the polysilicon resistor, and stores a related value. The temperature of the power semiconductor device is measured by generating a constant current through the resistor that has a magnitude proportional to the stored value. Overtemperature protection may also be provided. To adapt the resistance (10), at initial use of the semiconductor, counter 22 is enabled and controls current mirror 23 to send a step-rise increasing current through sense resistor (10). When the voltage across the resistor reaches a predetermined value (0.87 V bg ), comparator 35 disables the counter and its state is read into EEPROM 31. This self-trimming causes a measurement current which ensures that at the critical temperature e.g. 170‹C, the voltage across sense resistor (10) causes comparator 36 to output a signal.

Description

2322709 METHOD AND CIRCUIT TO SENSE THE T1 OF MOS-GATED POWER
SEMICONDUCTOR DEVICES 1
FIELD OF THE INVENTION
The present invention relates to the sensing of the junction temperature of a MOS-gated power semiconductor device, such as a power MOSFET or an IGBT die. More specifically, the invention relates to the integration of a simple temperature sensor in the MOSgated device aie and relates to an integrated circuit for trimming and reading the sensor.
is SPM186028 BACKGROUND OF THE INVENTION
The accurate determination of the junction temperature (T,) of a power semiconductor device is important for attaining high levels of operation reliability. This problem is particularly critical for extra low Rd,,,, power MOSFETs, such as those having a value of 6 milliohm, because these devices are very difficult to protect against overloads.
It is known that an integrated circuit can be employed to determine the junction temperature of the power semiconductor device. However, prior FET devices, such as the TEMPFET made by Siemens, require that the IC be mounted on top or close to the power device. It is more desirable to have the capability of either separately packaging the integrated circuit in a standard package or co-packaging it with the power device.
There are various ways to integrate a temperature sensor into a power semiconductor device. As an example, polysilicon diodes, P+/epi substrate diodes is 5PM186028 or lateral MOSFETs are incorporated for temperature sensing. However, these known sensors have limitations and require fabrication using a non- standard process with extra masks. It is therefore desirable to incorporate a temperature sensor that is compatible with current processes for manufacturing existing semiconductor devices.
It has been proposed to include a resistor in the power semiconductor device, such as an N+ polysilicon resistor, to sense the junction temperature. The standard processes for making a polysilicon resistor have a very wide variation, typically +/- 20%, which when compared to their very low temperature coefficient, typically O.AlIC, can cause a +/- 2000C variation in the measured temperature. Though this problem can be solved by trimming the IC that reads the sensor, the mass production process of the IC would be greatly complicated if each individual IC were to be trimmed for a respective MOSFET or IGBT. Thus, it is further desirably to simplify the adaptation of the IC to the power device.
SUMMARY OF THE INVENTION
A preferred embodiment of the present invention incorporates an N+ polysilicon resistor to sense the junction temperature of a MOS-gated semiconductor device and employs an integrated circuit that is selfadapting to the power device.
The use of an N+ polysilicon resistor to sense the junction temperature has several advantages. The sensor is compatible with current MOS-gated semiconductor devices, such as the HEXFET power MOSFET made by International Rectifier Corporation and IGBTs also made by International Rectifier Corporation. The sensor can SPEC186028 be easily routed at the center of the power device to sense the peak temperature. The thermal time constant is very low, typically on the order of igs and is an order of magnitude lower than that of the prior devices. The center is completely isolated from the power terminals by the field oxide so that the isolation is at least +\-60 volts for a low voltage HEXFET MOSFETs and higher for IGBTs. Thus, the temperature of a high side power semiconductor device can be easily sensed using a grounded IC control.
The self adapting IC includes a small nonvolatile memory, typically around 10 bits, and a trimming sequencer. When the integrated circuit is assembled with the power semiconductor device on a printed circuit board or in a hybrid or power module, and is tested by the end user, a programming signal, typically 5 volts, is applied to a special input of the IC. The signal starts a trimming sequence inside the IC which may be similar to that used by the IR3010 device sold by International Rectifier Corporation. The IC then determines the optimum combination of bits that matches the respective room temperature resistance of the sensor. The trimming sequence is completely transparent to the user. When the programming pin is released, the 10 bit word is permanently stored in the IC memory.
The IC uses the value of the polysilicon resistance as an image of the junction temperature of the power device. The integrated circuit may also be capable of providing a simple overtemperature (OT) signal when the sensed temperature is above a predetermined threshold, a dual OT signal indicating pre alarm/shut down, or a linear measurement of the junction temperature T,. These functions can be provided using relatively - 4 simple analog processing. The integrated circuit can also be capable of monitoring the junction temperature of up to 4 to 6 power semiconductor devices that are bridge connected.
SPM186MS In accordance with an embodiment of the invention, a method of self- trimming a temperature measuring circuit adapts to a respective temperature sensing resistor disposed in a power semiconductor device. Plural successive count values are generated, and a variable current is supplied to the temperature sensing resistor that increases as a function of each successive count value. The voltage across the resistor is measured, and the counting is terminated when the voltage across the temperature sensing resistor reaches a predefined value. The last one of these plural values is stored.
A reset signal to initiate the generation of the successive count values may be supplied. A constant current value may be generated as a function of the stored count value, the current supplied to the temperature sensing resistor, and the voltage across the temperature sensing resistor measured. The measured voltage may be compared to a limit value that is proportional to the predefined value, and an overtemperature signal generated when the measured voltage exceeds the limit value.
The predefined value may be proportional to the bandgap voltage. The method may also be carried out by an integrated circuit.
In a further embodiment of the invention, a self-trimming temperature monitoring circuit adapts to a respective temperature sensing resistor disposed in a power semiconductor device. The sequencer generates plural successive count values, and a current source SPECXI8W28 supplies a variable current to the temperature sensing resistor having a value that increases as a function of each successive count value. A measuring circuit measures the voltage across the temperature sensing resistor, and a detecting circuit terminates operation of the sequencer when the voltage across the temperature sensing resistor reaches a predefined value. The final one of the count values is stored in a memory.
A reset signal generator may generate a signal that initiates operation of a sequencer. The current source may include a variable ratio current mirror, and the sequencer may include a counter. The predefined value may be proportional to the bandgap voltage.
The current source may include a constant current source which generates a constant current as a function of the value stored in the memory, and the measuring circuit may measure the voltage across the resistor using the constant current. An overvoltage detection circuit compares, when the constant current is delivered across the temperature sensing resistor, the voltage across the resistor to a limit value that is proportional to the predefined value, and an overtemperature signal generator generates an overtemperature signal when the measured voltage exceeds the limit value.
The circuit may be an integrated circuit, and the memory may be an EEPROM.
In a further embodiment of the invention, a system measures the junction temperature of a power semiconductor device and includes a temperature sensing resistor disposed in the power semiconductor device, and a selftrimming, temperature sensing circuit that is adaptable to the temperature sensing resistor.
SPECISW28 A semiconductor device may be a MOSFET or may be an IGBT. The circuit may be an integrated circuit, and the integrated circuit and power semiconductor device may be co-packaged. other features and advantages of the present invention will become apparent from the following description of the invention which refers to the accompanying drawings.
BRIEF DESCRIPTION OF THE DRAWINGS
Preferred embodiments of the invention will now be described in greater detail in the following detailed description with reference to the drawings in which:
Figure I is a top view of an MOS-gated power semiconductor device in which a temperature sensing polysilicon resistor is incorporated according to the invention; Figure 2 is a block diagram showing the temperature sensing integrated circuit according to the invention; and Figure 3 is a diagram showing an example of the implementation of the integrated circuit of Figure 2 with a power semiconductor device.
DETAILED DESCRIPTION OF THE INVENTION
Figure 1 shows how the temperature sensor polysilicon resistor can be implemented in an MOS-gated power semiconductor device die 9. The die may be a power MOSFET or an IGBT, for example. The polysilicon resistor 10 is narrower in the vicinity of the source pad 11 to sense the peak temperature. The total number of squares of the resistor is 1000 to 2000, corresponding to 25 to 50 KOhm, respectively. The gate pad 12, drain 13, and is SPEC186028 source 11 are connected to pins 14, 15 and 16, respectively, of a conventional package. sense pins i and 2 are connected to sense pads 17 and 18, respectively, on the resistor of die 9.
Fig. 2 shows a simplified block diagram of the self-adapting IC 20. The self-adapting operation of IC 20 is as follows: When +5V is supplied to the PROG input, a reset signal is delivered to the counter 22. Then, the counter 22 starts to count up, increasing the ratio of the variable current mirror 23 and, in turn, the current supplied to the resistor 10. The current supplied to the sense resistor 10 ramps up until the voltage across it reaches 0.87 times value of a bandgap reference voltage Vb., present in line 29. The bandgap reference voltage is supplied by bandgap reference supply 37 and is divided across divider 38 and then supplied to op-amp 35 which compares the divided voltage, 0.87 V,,g, to the voltage across resistor 10. When the voltage across resistor 10 reaches 0.87 Vb., op-amp 35 changes state and the output is supplied to AND gate 39 which, in turn, turns off clock enable 33. Then, the enable signal on line 30 goes low, the counter 22 stops counting and the last bit word supplied by the counter is stored in the EEPROM 31.
During normal temperature sensing operation, the PROG input 21 is held to ground potential by a pull down resistor 32. A current source 40 generates a zero temperature coefficient current which flows through the current mirror 23 and across sense resistor 10. The value of the current supplied to resistor is controlled using the value stored in EEPROM 18 such that at room temperature, the voltage across the resistor is 0.87 Vbg SPM186028 If the power device heats up above 1700C, the sense voltage will reach Vbg causing op-amp 36 to change state, and the overtemperature (OT) signal will go high. The current source 40 has a zero temperature coefficient to avoid influencing the IC temperature on the OT threshold.
The EEPROM 31 can be implemented using a CMOS/EEPROM processor or by 11zener zapping". The size of the IC is only a f ew mm2.
Fig. 3 shows a practical implementation of the IC 20. The IC 20 can be assembled in a very small surface amount package or may be co-packaged with a power device 50, such as a MOSFET or IGBT, in a power module.
In carrying out the design, care must be taken to control variations in the temperature coefficient (TC) of the polysilicon resistor. These variations translate directly into variations in the OT threshold. Thus, it is preferable that the variations of TC are less than +/10%.
Care should also be taken to prevent loss of data on the EEPROM which can be caused by a high ambient temperature, such as the ambient temperature of 1500C that is needed for automotive applications and the ambient temperature of 2000C for power modules application. The "zap" technique may be used in place favor of the EEPROM 31 in such applications.
Although the present invention has been described in relation to particular embodiments thereof, many other variations and modifications and other uses will become apparent to those skilled in the art. It is preferred, therefore, that the present invention be limited not by the specific disclosure herein, but only by the appended claims.
CE-A I MS I- A method of self-trimming a temperature measuring circuit to adapt to a respective temperature sensing resistor disposed in a power semiconductor device, the method comprising the steps of: generating a plurality of successive count values; supplying a variable current to the temperature sensing resistor, the value of said current increasing as a function of each successive count value; measuring the voltage across the resistor; terminating the counting when the voltage across the temperature sensing resistor reaches a predefined value; and storing the final one of said plurality of successive count values.
A is SPECX186028 2. The method of claim 1 further comprising the step of supplying a reset signal to initiate said step of generating a plurality of successive count values.
3. The method of claim 1 further comprising the steps of: generating a constant current as a function of the stored count value and supplying the constant current to said temperature sensing resistor; and measuring the voltage across the temperature sensing resistor.
4. The method of claim 3 further comprising the steps of - 10 SPECIMS comparing the measured voltage with a limit value that is proportional to said predefined value; and generating an overtemperature signal when said measured voltage exceeds said limit value.
5. The method of claim 1 wherein said predefined value is proportional to the bandgap voltage.
6. The method of claim 1 wherein said method is carried out by an integrated circuit.
7. A self-trimming temperature monitoring circuit for adapting to a respective temperature sensing resistor disposed in a power semiconductor device; said circuit comprising: a sequencer for generating a plurality of successive count values; a current source for supplying a variable current to the temperature sensing resistor, the value of said current increasing as a function of each successive count value; a measuring circuit for measuring the voltage across the temperature sensing resistor; a detecting circuit for terminating operation of said sequencer when the voltage across the temperature sensing resistor reaches a predefined value; and memory for storing the final one of said plurality of successive count values.
8. The circuit of claim 7 further comprising a reset signal generator for generating a signal that initiates operation of said sequencer.
9. The circuit of claim 7 wherein said current source includes a variable ratio current mirror.
10. The circuit of claim 7 wherein said sequencer includes a counter.
11. The circuit of claim 7 wherein said predefined value is proportional to the bandgap voltage.
12. The circuit of claim 7 wherein said current source includes a constant current source, said current source generating a constant current as a function of the value stored in said memory, and said measuring circuit measure the voltage across said resistor using said constant current.
13. The circuit of claim 12 further comprising an overvoltage detection circuit for comparing, when said constant current is delivered across the said temperature sensing resistor, the measured voltage across said resistor with a limit value that is proportional to said predefined value, and an overtemperature signal generator for generating an overtemperature signal when said measured voltage exceeds said limit value.
14. The circuit of claim 7 wherein said circuit is an integrated circuit.
15. The circuit of claim 7 wherein said memory is an EEPROM.
SPEC1MS 12 - is SPM186028 16. A system for measuring the junction temperature of a power semiconductor device, said system comprising:
a temperature sensing resistor disposed in said power semiconductor device; and a self-trimming temperature sensing circuit that is adaptable to said temperature sensing resistor and comprising:
sequencer for generating a plurality of successive count values; current source for supplying a variable current to the temperature sensing resistor, the value of said current increasing as a function of each successive count value; measuring circuit for measuring the voltage across the temperature sensing resistor; detecting circuit for terminating operation of said sequencer when the voltage across the temperature sensing resistor reaches a predefined value; and memory for storing the final one of said plurality of successive count values.
17. The circuit of claim 16 further comprising a reset signal generator for generating a signal that initiates operation of said sequencer.
18. The system of claim 16 wherein said current source includes a variable ratio current mirror.
19. The system of claim 16 wherein said sequencer includes a counter.
20. The system of claim 16 wherein said predefined value is proportional to the bandgap voltage.
21. The system of claim 16 wherein said current source includes a constant current source, said current source generating a constant current as a function of the value stored in said memory, and said measuring circuit measure the voltage across said resistor using said constant current.
22. The system of claim 21 further comprising an overvoltage detection circuit for comparing, when said constant current is delivered across the voltage across temperature sensing resistor the voltage across said resistor with a limit value that is proportional to said predefined value, and an overtemperature signal generator for generating an overtemperature signal when said measured voltage exceeds said limit value.
23. The system of claim 16 wherein said circuit is an integrated circuit.
24. The system of claim 16 wherein said memory is an EEPROM.
25. The system of claim 16 wherein said power semiconductor device is a MOSFET.
26. The system of claim 16 wherein said power semiconductor device is an IGBT.
SPEC186028 - 14 27. The system of claim 23 wherein said integrated circuit and said power semiconductor device are co-packaged.
28. A method for self-trimming a temperature measuring circuit to adapt to a respective temperature sensing resistor disposed in a power semiconductor device substantially as herein described.
29. A self-trimming temperature monitoring circuit for adapting to a respective temperature sensing resistor disposed in a power semiconductor device substantially as herein described.
30. A system for measuring the junction temperature of a power semiconductor device substantially as herein described.
SPEC186028
GB9801403A 1997-02-12 1998-01-22 Method and circuit to sense the Tj of MOS-gated power semiconductor devices Expired - Fee Related GB2322709B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US79883597A 1997-02-12 1997-02-12

Publications (3)

Publication Number Publication Date
GB9801403D0 GB9801403D0 (en) 1998-03-18
GB2322709A true GB2322709A (en) 1998-09-02
GB2322709B GB2322709B (en) 2000-11-01

Family

ID=25174399

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9801403A Expired - Fee Related GB2322709B (en) 1997-02-12 1998-01-22 Method and circuit to sense the Tj of MOS-gated power semiconductor devices

Country Status (8)

Country Link
JP (1) JP2846309B2 (en)
KR (1) KR19980070752A (en)
DE (1) DE19805734A1 (en)
FR (1) FR2759456B1 (en)
GB (1) GB2322709B (en)
IT (1) IT1298182B1 (en)
SG (1) SG55452A1 (en)
TW (1) TW385548B (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6948847B2 (en) 2002-05-08 2005-09-27 Infineon Technologies Ag Temperature sensor for a MOS circuit configuration
WO2009141347A1 (en) * 2008-05-19 2009-11-26 X-Fab Semiconductor Foundries Ag Operating temperature measurement for an mos power component, and mos component for carrying out the method
WO2009141365A2 (en) * 2008-05-19 2009-11-26 X-Fab Semiconductor Foundries Ag Location-related adjustment of the operating temperature distribution or power distribution of a semiconductor power component, and component for carrying out said method
WO2009141336A2 (en) * 2008-05-19 2009-11-26 X-Fab Semiconductor Foundries Ag Method for controlling the operating temperature of a semiconductor power component, and component for carrying out said method
CN105929316A (en) * 2016-07-10 2016-09-07 北京工业大学 Multi-path IGBT junction temperature and thermal fatigue real-time monitoring system
CN106501699A (en) * 2016-10-20 2017-03-15 北京工业大学 The method for real-time measurement of bipolar transistor junction temperature under a kind of saturation
EP3244178A1 (en) * 2013-02-01 2017-11-15 ResMed Ltd. Wire heated tube with temperature control system for humidifier for respiratory apparatus
US10086158B2 (en) 2009-07-31 2018-10-02 Resmed Limited Wire heated tube with temperature control system, tube type detection, and active over temperature protection for humidifier for respiratory apparatus

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10023950A1 (en) * 2000-05-16 2001-11-22 Bosch Gmbh Robert Semiconductor component with power switch connectable to load
JP3721119B2 (en) * 2001-11-08 2005-11-30 株式会社東芝 Temperature sensor
JP4681911B2 (en) * 2005-02-25 2011-05-11 三菱電機株式会社 Power semiconductor device
CN100374872C (en) * 2005-10-14 2008-03-12 北京工业大学 Semiconductor PN node diode device temperature rise measuring method and apparatus
JP2009240024A (en) * 2008-03-26 2009-10-15 Denso Corp Temperature detector
DE102012006009A1 (en) 2012-03-24 2013-09-26 Volkswagen Aktiengesellschaft Method for determining junction temperature of pn-transition in e.g. MOSFET for use in energy converter, involves determining junction temperature based on determined time duration and power path voltage
CN102928109A (en) * 2012-10-25 2013-02-13 重庆长安汽车股份有限公司 Signal collecting circuit
DE102012222481A1 (en) * 2012-12-06 2014-06-12 Robert Bosch Gmbh Method for determining junction temperature of power semiconductor in motor car, involves measuring power dissipation of power semiconductor, and determining recorded warming curve of impedance based on operation of power semiconductor
CN103323135B (en) * 2013-06-09 2014-12-03 广东明阳龙源电力电子有限公司 IGBT temperature detection circuit
DE102015104990B4 (en) * 2015-03-31 2020-06-04 Infineon Technologies Austria Ag Compound semiconductor device with a scanning lead
EP3598505B1 (en) * 2018-07-19 2023-02-15 Mitsubishi Electric R&D Centre Europe B.V. Temperature estimation of a power semiconductor device
EP3690412B1 (en) * 2019-02-04 2022-06-15 EM Microelectronic-Marin SA Flicker noise reduction in a temperature sensor arrangement

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0224274A2 (en) * 1985-11-29 1987-06-03 Nippondenso Co., Ltd. Semiconductor device with protective means against overheating
GB2281815A (en) * 1993-09-14 1995-03-15 Int Rectifier Corp Power mosfet with overcurrent and over-temperature protection
GB2291742A (en) * 1993-09-14 1996-01-31 Int Rectifier Corp Power mosfet with overcurrent and over-temperature protection

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5728228A (en) * 1980-07-28 1982-02-15 Seiko Epson Corp Semiconductor integrated circuit
DE3150013A1 (en) * 1981-12-17 1983-06-23 Datron-Electronic Pichl & Schulte KG, 6109 Mühltal Method and device for the automated adjustment (calibration) of measuring instruments and transducers of physical input variables
JPS59225324A (en) * 1983-06-06 1984-12-18 Terumo Corp Electronic thermometer
JPS60127433A (en) * 1983-12-13 1985-07-08 Toshiba Corp Calibrating method of temperature detecting apparatus
GB2191292B (en) * 1986-06-07 1990-02-21 Thomas James Allen Measuring equipment

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0224274A2 (en) * 1985-11-29 1987-06-03 Nippondenso Co., Ltd. Semiconductor device with protective means against overheating
GB2281815A (en) * 1993-09-14 1995-03-15 Int Rectifier Corp Power mosfet with overcurrent and over-temperature protection
GB2291742A (en) * 1993-09-14 1996-01-31 Int Rectifier Corp Power mosfet with overcurrent and over-temperature protection

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6948847B2 (en) 2002-05-08 2005-09-27 Infineon Technologies Ag Temperature sensor for a MOS circuit configuration
WO2009141347A1 (en) * 2008-05-19 2009-11-26 X-Fab Semiconductor Foundries Ag Operating temperature measurement for an mos power component, and mos component for carrying out the method
WO2009141365A2 (en) * 2008-05-19 2009-11-26 X-Fab Semiconductor Foundries Ag Location-related adjustment of the operating temperature distribution or power distribution of a semiconductor power component, and component for carrying out said method
WO2009141336A2 (en) * 2008-05-19 2009-11-26 X-Fab Semiconductor Foundries Ag Method for controlling the operating temperature of a semiconductor power component, and component for carrying out said method
WO2009141350A2 (en) * 2008-05-19 2009-11-26 X-Fab Semiconductor Foundries Ag Location-related adjustment of the operating temperature distribution or power distribution of a semiconductor power component, and component for carrying out said method
WO2009141350A3 (en) * 2008-05-19 2010-05-06 X-Fab Semiconductor Foundries Ag Location-related adjustment of the operating temperature distribution or power distribution of a semiconductor power component, and component for carrying out said method
WO2009141365A3 (en) * 2008-05-19 2010-05-20 X-Fab Semiconductor Foundries Ag Location-related adjustment of the operating temperature distribution or power distribution of a semiconductor power component, and component for carrying out said method
WO2009141336A3 (en) * 2008-05-19 2010-06-03 X-Fab Semiconductor Foundries Ag Method for controlling the operating temperature of a semiconductor power component, and component for carrying out said method
US8901614B2 (en) 2008-05-19 2014-12-02 X-Fab Semiconductor Foundries Ag Location-related adjustment of the operating temperature distribution or power distribution of a semiconductor power component, and component for carrying out said method
US11033698B2 (en) 2009-07-31 2021-06-15 ResMed Pty Ltd Wire heated tube with temperature control system, tube type detection, and active over temperature protection for humidifier for respiratory apparatus
US10086158B2 (en) 2009-07-31 2018-10-02 Resmed Limited Wire heated tube with temperature control system, tube type detection, and active over temperature protection for humidifier for respiratory apparatus
US11607512B2 (en) 2009-07-31 2023-03-21 ResMed Pty Ltd Wire heated tube with temperature control system, tube type detection, and active over temperature protection for humidifier for respiratory apparatus
US11707587B2 (en) 2009-07-31 2023-07-25 ResMed Pty Ltd Wire heated tube with temperature control system, tube type detection, and active over temperature protection for humidifier for respiratory apparatus
EP3244178A1 (en) * 2013-02-01 2017-11-15 ResMed Ltd. Wire heated tube with temperature control system for humidifier for respiratory apparatus
US10363382B2 (en) 2013-02-01 2019-07-30 ResMed Pty Ltd Wire heated tube with temperature control system for humidifier for respiratory apparatus
US11260186B2 (en) 2013-02-01 2022-03-01 ResMed Pty Ltd Wire heated tube with temperature control system for humidifier for respiratory apparatus
US11779719B2 (en) 2013-02-01 2023-10-10 ResMed Pty Ltd Wire heated tube with temperature control system for humidifier for respiratory apparatus
CN105929316A (en) * 2016-07-10 2016-09-07 北京工业大学 Multi-path IGBT junction temperature and thermal fatigue real-time monitoring system
CN106501699A (en) * 2016-10-20 2017-03-15 北京工业大学 The method for real-time measurement of bipolar transistor junction temperature under a kind of saturation
CN106501699B (en) * 2016-10-20 2019-02-19 北京工业大学 The method for real-time measurement of bipolar transistor junction temperature under a kind of saturation state

Also Published As

Publication number Publication date
JP2846309B2 (en) 1999-01-13
ITMI980111A1 (en) 1999-07-23
IT1298182B1 (en) 1999-12-20
DE19805734A1 (en) 1998-08-20
JPH10246676A (en) 1998-09-14
SG55452A1 (en) 1998-12-21
TW385548B (en) 2000-03-21
FR2759456A1 (en) 1998-08-14
KR19980070752A (en) 1998-10-26
GB2322709B (en) 2000-11-01
GB9801403D0 (en) 1998-03-18
FR2759456B1 (en) 1999-07-02

Similar Documents

Publication Publication Date Title
GB2322709A (en) Method and circuit to sense temperature in power semiconductor devices
KR960010850B1 (en) Two-terminal multiplexible sensor
US6934652B2 (en) On-chip temperature measurement technique
US8879226B2 (en) High side switch circuit, interface circuit and electronic device
US6137165A (en) Hybrid package including a power MOSFET die and a control and protection circuit die with a smaller sense MOSFET
US20040024561A1 (en) Method and apparatus for temperature throttling the access frequency of an integrated circuit
US7277264B2 (en) Semiconductor integrated circuit having current detection functionality and power supply unit equipped with the same
US20060244496A1 (en) Power switching control device for electric systems
CN101680807B (en) Apparatus, system and method for high resolution identification with temperature dependent resistive device
EP0660093A1 (en) An apparatus for providing a detect signal related to temperature in a microprocessor
US7332358B2 (en) MOSFET temperature sensing
US5498971A (en) Method and control circuit for measuring the temperature of an integrated circuit
CN105258817A (en) Integrated temperature sensor for discrete semiconductor devices
US6948847B2 (en) Temperature sensor for a MOS circuit configuration
EP0256715B1 (en) Temperature sensing apparatus
CN109842094A (en) Overcurrent protective device
US10352782B2 (en) Thermal monitoring system in an integrated circuit die
CN100505238C (en) Integrated circuit and method for manufacturing and judging same
US8030719B2 (en) Thermal sensing and reset protection for an integrated circuit chip
US9331684B2 (en) Semiconductor device for sensing physical quantity
US10247616B2 (en) Electronics device
US7121721B2 (en) Apparatus and method for measuring operating temperatures of an electrical component
US20040150417A1 (en) Integrated circuit with junction temperature sensing diode
WO1998006142A1 (en) Temperature-indicating field effect transistor
JPH06213673A (en) Fault detector circuit device

Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20020122