TW385548B - Method and circuit to sense the T<J> of MOS-gated power semiconductor devices - Google Patents
Method and circuit to sense the T<J> of MOS-gated power semiconductor devices Download PDFInfo
- Publication number
- TW385548B TW385548B TW87101360A TW87101360A TW385548B TW 385548 B TW385548 B TW 385548B TW 87101360 A TW87101360 A TW 87101360A TW 87101360 A TW87101360 A TW 87101360A TW 385548 B TW385548 B TW 385548B
- Authority
- TW
- Taiwan
- Prior art keywords
- circuit
- patent application
- value
- scope
- temperature
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 42
- 238000000034 method Methods 0.000 title claims abstract description 15
- 229910044991 metal oxide Inorganic materials 0.000 claims description 14
- 150000004706 metal oxides Chemical class 0.000 claims description 14
- 230000006870 function Effects 0.000 claims description 13
- 230000005669 field effect Effects 0.000 claims description 10
- 238000005259 measurement Methods 0.000 claims description 8
- 238000001514 detection method Methods 0.000 claims 7
- 238000009529 body temperature measurement Methods 0.000 claims 1
- 238000012544 monitoring process Methods 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 12
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 229920005591 polysilicon Polymers 0.000 abstract 3
- 238000009966 trimming Methods 0.000 abstract 1
- 239000004020 conductor Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000006978 adaptation Effects 0.000 description 2
- 238000010561 standard procedure Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000003044 adaptive effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 101150100121 gna1 gene Proteins 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 230000036413 temperature sense Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
- G01K7/18—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a linear resistance, e.g. platinum resistance thermometer
- G01K7/20—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a linear resistance, e.g. platinum resistance thermometer in a specially-adapted circuit, e.g. bridge circuit
- G01K7/21—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a linear resistance, e.g. platinum resistance thermometer in a specially-adapted circuit, e.g. bridge circuit for modifying the output characteristic, e.g. linearising
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/01—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions
- G01K7/015—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions using microstructures, e.g. made of silicon
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
- G01K7/22—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a non-linear resistance, e.g. thermistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
- H01L29/7804—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device the other device being a pn-junction diode
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
- H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K2217/00—Temperature measurement using electric or magnetic components already present in the system to be measured
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/4901—Structure
- H01L2224/4903—Connectors having different sizes, e.g. different diameters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49562—Geometry of the lead-frame for devices being provided for in H01L29/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nonlinear Science (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US79883597A | 1997-02-12 | 1997-02-12 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW385548B true TW385548B (en) | 2000-03-21 |
Family
ID=25174399
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW87101360A TW385548B (en) | 1997-02-12 | 1998-02-04 | Method and circuit to sense the T<J> of MOS-gated power semiconductor devices |
Country Status (8)
Country | Link |
---|---|
JP (1) | JP2846309B2 (de) |
KR (1) | KR19980070752A (de) |
DE (1) | DE19805734A1 (de) |
FR (1) | FR2759456B1 (de) |
GB (1) | GB2322709B (de) |
IT (1) | IT1298182B1 (de) |
SG (1) | SG55452A1 (de) |
TW (1) | TW385548B (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103852706A (zh) * | 2012-12-06 | 2014-06-11 | 罗伯特·博世有限公司 | 考虑退化地确定功率半导体的阻挡层温度的方法及其实现装置 |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10023950A1 (de) * | 2000-05-16 | 2001-11-22 | Bosch Gmbh Robert | Halbleiter-Bauelement |
JP3721119B2 (ja) * | 2001-11-08 | 2005-11-30 | 株式会社東芝 | 温度センサ |
DE10220587B4 (de) | 2002-05-08 | 2007-07-19 | Infineon Technologies Ag | Temperatursensor für MOS-Schaltungsanordnung |
JP4681911B2 (ja) * | 2005-02-25 | 2011-05-11 | 三菱電機株式会社 | 電力用半導体装置 |
CN100374872C (zh) * | 2005-10-14 | 2008-03-12 | 北京工业大学 | 半导体pn结二极管器件的温升和热阻测量方法及装置 |
JP2009240024A (ja) * | 2008-03-26 | 2009-10-15 | Denso Corp | 温度検出装置 |
DE102008023217A1 (de) | 2008-05-19 | 2009-11-26 | Friedrich-Alexander-Universität Erlangen-Nürnberg | Elektrisches Verfahren zur ortsbezogenen Betriebstemperatureinstellung eines MOS-gesteuerten Halbleiterleistungsbauelementes und Bauelement zur Ausführung des Verfahrens |
US20110182324A1 (en) * | 2008-05-19 | 2011-07-28 | X-Fab Semiconductor Foundries Ag | Operating temperature measurement for an mos power component, and mos component for carrying out the method |
DE102008023215A1 (de) * | 2008-05-19 | 2009-12-03 | Friedrich-Alexander-Universität Erlangen-Nürnberg | Verfahren zur Betriebstemperatursteuerung eines MOS-gesteuerten Halbleiterleistungsbauelementes und Bauelement zur Ausführung des Verfahrens |
AU2010206053B2 (en) | 2009-07-31 | 2014-08-07 | ResMed Pty Ltd | Wire Heated Tube with Temperature Control System, Tube Type Detection, and Active Over Temperature Protection for Humidifier for Respiratory Apparatus |
DE102012006009B4 (de) | 2012-03-24 | 2024-06-13 | Volkswagen Aktiengesellschaft | Verfahren und Vorrichtung zur Bestimmung einer Sperrschichttemperatur eines Halbleiterbauelements |
CN102928109A (zh) * | 2012-10-25 | 2013-02-13 | 重庆长安汽车股份有限公司 | 一种信号采集电路 |
NZ743034A (en) | 2013-02-01 | 2019-12-20 | ResMed Pty Ltd | Wire heated tube with temperature control system for humidifier for respiratory apparatus |
CN103323135B (zh) * | 2013-06-09 | 2014-12-03 | 广东明阳龙源电力电子有限公司 | 一种igbt温度检测电路 |
DE102015104990B4 (de) * | 2015-03-31 | 2020-06-04 | Infineon Technologies Austria Ag | Verbindungshalbleitervorrichtung mit einem Abtastlead |
CN105929316A (zh) * | 2016-07-10 | 2016-09-07 | 北京工业大学 | 多路igbt结温及热疲劳实时监控系统 |
CN106501699B (zh) * | 2016-10-20 | 2019-02-19 | 北京工业大学 | 一种饱和状态下双极晶体管结温的实时测量方法 |
EP3598505B1 (de) * | 2018-07-19 | 2023-02-15 | Mitsubishi Electric R&D Centre Europe B.V. | Temperaturschätzung eines leistungshalbleiterbauelements |
EP3690412B1 (de) * | 2019-02-04 | 2022-06-15 | EM Microelectronic-Marin SA | Funkelrauschenreduzierung in einer temperatursensoranordnung |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5728228A (en) * | 1980-07-28 | 1982-02-15 | Seiko Epson Corp | Semiconductor integrated circuit |
DE3150013A1 (de) * | 1981-12-17 | 1983-06-23 | Datron-Electronic Pichl & Schulte KG, 6109 Mühltal | "verfahren und vorrichtung zur automatisierten justierung (eichung) von messgeraeten und wandlern pysikalischer eingangsgroessen" |
JPS59225324A (ja) * | 1983-06-06 | 1984-12-18 | Terumo Corp | 電子温度計の製造方法 |
JPS60127433A (ja) * | 1983-12-13 | 1985-07-08 | Toshiba Corp | 温度検出装置の校正方法 |
JPH0693485B2 (ja) * | 1985-11-29 | 1994-11-16 | 日本電装株式会社 | 半導体装置 |
GB2191292B (en) * | 1986-06-07 | 1990-02-21 | Thomas James Allen | Measuring equipment |
GB2291742B (en) * | 1993-09-14 | 1996-08-28 | Int Rectifier Corp | Power MOS-gated device with over-temperature protection |
US5497285A (en) * | 1993-09-14 | 1996-03-05 | International Rectifier Corporation | Power MOSFET with overcurrent and over-temperature protection |
-
1998
- 1998-01-19 SG SG1998000139A patent/SG55452A1/en unknown
- 1998-01-22 GB GB9801403A patent/GB2322709B/en not_active Expired - Fee Related
- 1998-01-23 KR KR1019980002017A patent/KR19980070752A/ko not_active Application Discontinuation
- 1998-01-23 IT IT98MI000111 patent/IT1298182B1/it active IP Right Grant
- 1998-02-04 TW TW87101360A patent/TW385548B/zh active
- 1998-02-04 JP JP2293998A patent/JP2846309B2/ja not_active Expired - Lifetime
- 1998-02-11 FR FR9801599A patent/FR2759456B1/fr not_active Expired - Fee Related
- 1998-02-12 DE DE1998105734 patent/DE19805734A1/de not_active Withdrawn
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103852706A (zh) * | 2012-12-06 | 2014-06-11 | 罗伯特·博世有限公司 | 考虑退化地确定功率半导体的阻挡层温度的方法及其实现装置 |
Also Published As
Publication number | Publication date |
---|---|
JP2846309B2 (ja) | 1999-01-13 |
FR2759456B1 (fr) | 1999-07-02 |
KR19980070752A (ko) | 1998-10-26 |
ITMI980111A1 (it) | 1999-07-23 |
GB2322709B (en) | 2000-11-01 |
DE19805734A1 (de) | 1998-08-20 |
FR2759456A1 (fr) | 1998-08-14 |
SG55452A1 (en) | 1998-12-21 |
GB9801403D0 (en) | 1998-03-18 |
IT1298182B1 (it) | 1999-12-20 |
JPH10246676A (ja) | 1998-09-14 |
GB2322709A (en) | 1998-09-02 |
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