IT1285198B1 - Dispositivo a semiconduttori di alimentazione a porte mos integrato con tensione del morsetto negativo elevata e funzionamento senza - Google Patents

Dispositivo a semiconduttori di alimentazione a porte mos integrato con tensione del morsetto negativo elevata e funzionamento senza

Info

Publication number
IT1285198B1
IT1285198B1 IT96MI000688A ITMI960688A IT1285198B1 IT 1285198 B1 IT1285198 B1 IT 1285198B1 IT 96MI000688 A IT96MI000688 A IT 96MI000688A IT MI960688 A ITMI960688 A IT MI960688A IT 1285198 B1 IT1285198 B1 IT 1285198B1
Authority
IT
Italy
Prior art keywords
ports
power supply
semiconductor device
negative terminal
terminal voltage
Prior art date
Application number
IT96MI000688A
Other languages
English (en)
Italian (it)
Inventor
Bruno C Nadd
Original Assignee
Int Rectifier Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Int Rectifier Corp filed Critical Int Rectifier Corp
Publication of ITMI960688A0 publication Critical patent/ITMI960688A0/it
Publication of ITMI960688A1 publication Critical patent/ITMI960688A1/it
Application granted granted Critical
Publication of IT1285198B1 publication Critical patent/IT1285198B1/it

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06—Modifications for ensuring a fully conducting state
    • H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/08128—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in composite switches
IT96MI000688A 1995-04-11 1996-04-11 Dispositivo a semiconduttori di alimentazione a porte mos integrato con tensione del morsetto negativo elevata e funzionamento senza IT1285198B1 (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/420,194 US5592117A (en) 1995-04-11 1995-04-11 Integrated MOSgated power semiconductor device with high negative clamp voltage and fail safe operation

Publications (3)

Publication Number Publication Date
ITMI960688A0 ITMI960688A0 (ko) 1996-04-11
ITMI960688A1 ITMI960688A1 (it) 1997-10-11
IT1285198B1 true IT1285198B1 (it) 1998-06-03

Family

ID=23665461

Family Applications (1)

Application Number Title Priority Date Filing Date
IT96MI000688A IT1285198B1 (it) 1995-04-11 1996-04-11 Dispositivo a semiconduttori di alimentazione a porte mos integrato con tensione del morsetto negativo elevata e funzionamento senza

Country Status (8)

Country Link
US (1) US5592117A (ko)
JP (1) JP3758738B2 (ko)
KR (1) KR100194128B1 (ko)
DE (1) DE19613957A1 (ko)
FR (1) FR2733100B1 (ko)
GB (1) GB2299903B (ko)
IT (1) IT1285198B1 (ko)
SG (1) SG49866A1 (ko)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0766394B1 (de) * 1995-09-27 2002-03-20 Infineon Technologies AG Schaltungsanordnung zum Ansteuern eines Leistungs-Enhancement-MOSFET
US6127746A (en) * 1996-10-21 2000-10-03 International Rectifier Corp. Method of controlling the switching DI/DT and DV/DT of a MOS-gated power transistor
US6452441B1 (en) * 1999-10-01 2002-09-17 Advanced Micro Devices, Inc. Low threshold voltage device with charge pump for reducing standby current in an integrated circuit having reduced supply voltage
DE19950022A1 (de) * 1999-10-09 2001-04-12 Bosch Gmbh Robert Ansteuervorrichtung für einen Schalter zum elektronischen Schalten eines Verbrauchers
IT1313850B1 (it) * 1999-11-25 2002-09-24 St Microelectronics Srl Circuito "high side" ad alta efficienza.
JP2004519991A (ja) * 2001-03-28 2004-07-02 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ 同期整流器
US6747300B2 (en) * 2002-03-04 2004-06-08 Ternational Rectifier Corporation H-bridge drive utilizing a pair of high and low side MOSFETs in a common insulation housing
US6809559B2 (en) * 2002-08-27 2004-10-26 Semiconductor Components Industries, L.L.C. Method of forming a power device and structure therefor
US7224204B2 (en) * 2005-03-08 2007-05-29 Linear Technology Corporation Method and circuit for driving a gate of a MOS transistor negative
US20070090920A1 (en) * 2005-10-22 2007-04-26 Canter James M Apparatus and Method for Controlling Access to Remotely Located Equipment
JP4895623B2 (ja) * 2006-01-25 2012-03-14 株式会社オートネットワーク技術研究所 電力供給制御装置
US20070195490A1 (en) * 2006-02-13 2007-08-23 Howell Sean V Apparatus And Method For Attaching An Electronic Module To A Lock Assembly
US20070200673A1 (en) * 2006-02-13 2007-08-30 Godwin Bryan W Apparatus and Method for Controlling and Monitoring Access to a Storage Container
US20080243566A1 (en) * 2007-03-27 2008-10-02 Godwin Bryan W System, Method And Apparatus For Identifying And Correcting Data Integrity Problems Associated With Remotely Located Equipment
JP5064905B2 (ja) * 2007-06-26 2012-10-31 ルネサスエレクトロニクス株式会社 半導体装置
JP5266029B2 (ja) 2007-12-14 2013-08-21 ルネサスエレクトロニクス株式会社 負荷駆動装置
US9112494B2 (en) * 2011-07-28 2015-08-18 Infineon Technologies Ag Charge pump driven electronic switch with rapid turn off
US8624637B2 (en) * 2012-02-08 2014-01-07 Infineon Technologies Ag Switching control circuit for thermal protection of transistors
JP5783997B2 (ja) * 2012-12-28 2015-09-24 三菱電機株式会社 電力用半導体装置
JP6117640B2 (ja) * 2013-07-19 2017-04-19 ルネサスエレクトロニクス株式会社 半導体装置及び駆動システム
US9917578B2 (en) * 2016-02-19 2018-03-13 Infineon Technologies Austria Ag Active gate-source capacitance clamp for normally-off HEMT
JP2019115166A (ja) * 2017-12-22 2019-07-11 ルネサスエレクトロニクス株式会社 半導体装置
JP2021034839A (ja) * 2019-08-22 2021-03-01 株式会社オートネットワーク技術研究所 スイッチ装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4691129A (en) * 1986-03-19 1987-09-01 Siemens Aktiengesellschaft Drive circuit for a power MOSFET with source-side load
US5142171A (en) * 1988-04-05 1992-08-25 Hitachi, Ltd. Integrated circuit for high side driving of an inductive load
IT1226557B (it) * 1988-07-29 1991-01-24 Sgs Thomson Microelectronics Circuito di controllo della tensione di bloccaggio di un carico induttivo pilotato con un dispositivo di potenza in configurazione "high side driver"
EP0369048A1 (de) * 1988-11-15 1990-05-23 Siemens Aktiengesellschaft Schaltungsanordnung zur Laststromregelung in einem Leistungs-MOSFET
FR2644651B1 (fr) * 1989-03-15 1991-07-05 Sgs Thomson Microelectronics Circuit de commande de transistor mos de puissance sur charge inductive
EP0582125B1 (de) * 1992-08-04 1998-01-28 Siemens Aktiengesellschaft Ansteuerschaltung für einen Leistungs-MOSFET mit sourceseitiger Last
US5418673A (en) * 1992-12-14 1995-05-23 North American Philips Corporation Control electrode disable circuit for power transistor
JPH06252727A (ja) * 1993-02-10 1994-09-09 Siemens Ag Ｍｏｓ半導体素子の制御回路
US5467047A (en) * 1994-07-15 1995-11-14 Motorola, Inc. Power transistor rapid turn off circuit for saving power

Also Published As

Publication number Publication date
GB9607237D0 (en) 1996-06-12
US5592117A (en) 1997-01-07
KR100194128B1 (ko) 1999-06-15
FR2733100B1 (fr) 2000-09-08
GB2299903A (en) 1996-10-16
JPH0918317A (ja) 1997-01-17
DE19613957A1 (de) 1996-10-17
ITMI960688A0 (ko) 1996-04-11
FR2733100A1 (fr) 1996-10-18
ITMI960688A1 (it) 1997-10-11
KR960039341A (ko) 1996-11-25
GB2299903B (en) 2000-03-01
JP3758738B2 (ja) 2006-03-22
SG49866A1 (en) 1998-06-15

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Legal Events

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0001 Granted