IT1313850B1 - Circuito "high side" ad alta efficienza. - Google Patents

Circuito "high side" ad alta efficienza.

Info

Publication number
IT1313850B1
IT1313850B1 IT1999MI002469A ITMI992469A IT1313850B1 IT 1313850 B1 IT1313850 B1 IT 1313850B1 IT 1999MI002469 A IT1999MI002469 A IT 1999MI002469A IT MI992469 A ITMI992469 A IT MI992469A IT 1313850 B1 IT1313850 B1 IT 1313850B1
Authority
IT
Italy
Prior art keywords
circuit
high efficiency
efficiency
high side
Prior art date
Application number
IT1999MI002469A
Other languages
English (en)
Inventor
Aldo Novelli
Roberto Gariboldi
Angelo Genova
Roberto Filippo
Original Assignee
St Microelectronics Srl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by St Microelectronics Srl filed Critical St Microelectronics Srl
Priority to IT1999MI002469A priority Critical patent/IT1313850B1/it
Publication of ITMI992469A0 publication Critical patent/ITMI992469A0/it
Priority to EP00204130A priority patent/EP1104106A3/en
Priority to US09/721,100 priority patent/US6577171B1/en
Publication of ITMI992469A1 publication Critical patent/ITMI992469A1/it
Application granted granted Critical
Publication of IT1313850B1 publication Critical patent/IT1313850B1/it

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/04123—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06—Modifications for ensuring a fully conducting state
    • H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches
IT1999MI002469A 1999-11-25 1999-11-25 Circuito "high side" ad alta efficienza. IT1313850B1 (it)

Priority Applications (3)

Application Number Priority Date Filing Date Title
IT1999MI002469A IT1313850B1 (it) 1999-11-25 1999-11-25 Circuito "high side" ad alta efficienza.
EP00204130A EP1104106A3 (en) 1999-11-25 2000-11-21 High efficiency 'high side' circuit
US09/721,100 US6577171B1 (en) 1999-11-25 2000-11-22 Methods and apparatus for preventing inadvertent activation of power devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT1999MI002469A IT1313850B1 (it) 1999-11-25 1999-11-25 Circuito "high side" ad alta efficienza.

Publications (3)

Publication Number Publication Date
ITMI992469A0 ITMI992469A0 (it) 1999-11-25
ITMI992469A1 ITMI992469A1 (it) 2001-05-25
IT1313850B1 true IT1313850B1 (it) 2002-09-24

Family

ID=11384026

Family Applications (1)

Application Number Title Priority Date Filing Date
IT1999MI002469A IT1313850B1 (it) 1999-11-25 1999-11-25 Circuito "high side" ad alta efficienza.

Country Status (3)

Country Link
US (1) US6577171B1 (it)
EP (1) EP1104106A3 (it)
IT (1) IT1313850B1 (it)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6803680B2 (en) * 2002-09-13 2004-10-12 Mia-Com, Inc. Apparatus, methods, and articles of manufacture for a switch having sharpened control voltage
US6730953B2 (en) * 2002-09-13 2004-05-04 Mia-Com, Inc. Apparatus, methods and articles of manufacture for a low control voltage switch
US7564292B2 (en) * 2007-09-28 2009-07-21 Alpha & Omega Semiconductor, Inc. Device and method for limiting Di/Dt caused by a switching FET of an inductive switching circuit
JP5443702B2 (ja) * 2008-04-08 2014-03-19 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 半導体装置
US7936189B2 (en) * 2008-12-04 2011-05-03 Stmicroelectronics S.R.L. Driver circuit and method for reducing electromagnetic interference
WO2011084496A1 (en) 2009-12-16 2011-07-14 Abbott Biotherapeutics Corp. Anti-her2 antibodies and their uses
US10520971B2 (en) * 2017-07-18 2019-12-31 Texas Instruments Incorporated Current sink with negative voltage tolerance

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2630276B1 (fr) * 1988-04-14 1992-07-03 Bendix Electronics Sa Circuit de commande d'une charge inductive
FR2644651B1 (fr) * 1989-03-15 1991-07-05 Sgs Thomson Microelectronics Circuit de commande de transistor mos de puissance sur charge inductive
US5592117A (en) * 1995-04-11 1997-01-07 International Rectifier Corporation Integrated MOSgated power semiconductor device with high negative clamp voltage and fail safe operation
US5726594A (en) * 1995-10-02 1998-03-10 Siliconix Incorporated Switching device including power MOSFET with internal power supply circuit
EP0887933A1 (en) * 1997-06-24 1998-12-30 STMicroelectronics S.r.l. Turn off circuit for an LDMOS in presence of a reverse current
US6072729A (en) * 1998-08-24 2000-06-06 Micron Technology, Inc. Data-output driver circuit and method
US6204700B1 (en) * 1999-04-13 2001-03-20 Delphi Technologies, Inc. Predriver circuit for controlling a power drive circuit

Also Published As

Publication number Publication date
US6577171B1 (en) 2003-06-10
ITMI992469A0 (it) 1999-11-25
ITMI992469A1 (it) 2001-05-25
EP1104106A3 (en) 2004-01-14
EP1104106A2 (en) 2001-05-30

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