IT1265136B1 - Dispositivo di memoria a semiconduttori avente una funzione di auto- ricarica - Google Patents

Dispositivo di memoria a semiconduttori avente una funzione di auto- ricarica

Info

Publication number
IT1265136B1
IT1265136B1 IT93MI001390A ITMI931390A IT1265136B1 IT 1265136 B1 IT1265136 B1 IT 1265136B1 IT 93MI001390 A IT93MI001390 A IT 93MI001390A IT MI931390 A ITMI931390 A IT MI931390A IT 1265136 B1 IT1265136 B1 IT 1265136B1
Authority
IT
Italy
Prior art keywords
charging
self
memory device
semiconductor memory
recharged
Prior art date
Application number
IT93MI001390A
Other languages
English (en)
Inventor
Niimi Makoto
Ito Shigemasa
Yamada Toyonobu
Takemae Yoshihiro
Kato Yoshiharu
Original Assignee
Fujitsu Ltd
Fujitsu Vlsi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP18238492A external-priority patent/JP3190119B2/ja
Priority claimed from JP04211820A external-priority patent/JP3110883B2/ja
Priority claimed from JP25122692A external-priority patent/JP3152758B2/ja
Priority claimed from JP14767393A external-priority patent/JP3285664B2/ja
Application filed by Fujitsu Ltd, Fujitsu Vlsi Ltd filed Critical Fujitsu Ltd
Publication of ITMI931390A0 publication Critical patent/ITMI931390A0/it
Publication of ITMI931390A1 publication Critical patent/ITMI931390A1/it
Application granted granted Critical
Publication of IT1265136B1 publication Critical patent/IT1265136B1/it

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40615—Internal triggering or timing of refresh, e.g. hidden refresh, self refresh, pseudo-SRAMs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Charge And Discharge Circuits For Batteries Or The Like (AREA)

Abstract

Un dispositivo di memoria a semiconduttori ha una unità di oscillatore (105, 106) per generare impulsi di ricarica (refresh), una unità di rilevamento della ricarica di indirizzi (110) per rilevare gli indirizzi ricaricati ed emettere un segnale predeterminato (S3) al completamento della ricarica di tutti gli indirizzi, e una unità di controllo di uscita (107) per continuare un modo di autoricarica per ricaricare tutti gli indirizzi secondo il segnale (S3) dell'unità di rilevamento della ricarica di indirizzi (110), prima di abilitare il modo di autoricarica in risposta ad un segnale esterno (/RAS). Perciò, l'operazione di ricarica viene continuata fino a che tutte le celle non siano state ricaricate, per cui i dati memorizzati nel dispositivo di memoria a semiconduttori non vengono persi e sono correttamente ricaricati.(Figura 3A)
IT93MI001390A 1992-06-29 1993-06-29 Dispositivo di memoria a semiconduttori avente una funzione di auto- ricarica IT1265136B1 (it)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP17060292 1992-06-29
JP18238492A JP3190119B2 (ja) 1992-07-09 1992-07-09 半導体記憶装置
JP04211820A JP3110883B2 (ja) 1992-08-07 1992-08-07 半導体記憶装置
JP25122692A JP3152758B2 (ja) 1992-09-21 1992-09-21 ダイナミック型半導体記憶装置
JP14767393A JP3285664B2 (ja) 1992-06-29 1993-06-18 ダイナミック・ランダム・アクセス・メモリ

Publications (3)

Publication Number Publication Date
ITMI931390A0 ITMI931390A0 (it) 1993-06-29
ITMI931390A1 ITMI931390A1 (it) 1994-12-29
IT1265136B1 true IT1265136B1 (it) 1996-10-31

Family

ID=27527807

Family Applications (1)

Application Number Title Priority Date Filing Date
IT93MI001390A IT1265136B1 (it) 1992-06-29 1993-06-29 Dispositivo di memoria a semiconduttori avente una funzione di auto- ricarica

Country Status (3)

Country Link
US (1) US5499213A (it)
KR (1) KR0126243B1 (it)
IT (1) IT1265136B1 (it)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3607407B2 (ja) * 1995-04-26 2005-01-05 株式会社日立製作所 半導体記憶装置
IL121044A (en) * 1996-07-15 2000-09-28 Motorola Inc Dynamic memory device
JP4000206B2 (ja) * 1996-08-29 2007-10-31 富士通株式会社 半導体記憶装置
US5890198A (en) * 1996-10-22 1999-03-30 Micron Technology, Inc. Intelligent refresh controller for dynamic memory devices
KR100253276B1 (ko) * 1997-02-18 2000-05-01 김영환 메모리 소자의 셀 리프레쉬 회로
JPH10269768A (ja) * 1997-03-26 1998-10-09 Mitsubishi Electric Corp 半導体集積回路
JP2000021162A (ja) * 1998-07-03 2000-01-21 Mitsubishi Electric Corp 揮発性メモリおよびエンベッデッド・ダイナミック・ランダム・アクセス・メモリ
KR100306966B1 (ko) * 1998-08-04 2001-11-30 윤종용 동기형버스트반도체메모리장치
KR100381966B1 (ko) * 1998-12-28 2004-03-22 주식회사 하이닉스반도체 반도체메모리장치및그구동방법
JP4056173B2 (ja) * 1999-04-14 2008-03-05 富士通株式会社 半導体記憶装置および該半導体記憶装置のリフレッシュ方法
JP2001126471A (ja) * 1999-10-27 2001-05-11 Mitsubishi Electric Corp 半導体集積回路
JP2002042463A (ja) * 2000-07-21 2002-02-08 Seiko Epson Corp 半導体装置、そのリフレッシュ方法および電子機器
DE10136700B4 (de) * 2001-07-27 2008-03-27 Qimonda Ag Verfahren zum Testen einer zu testenden Schaltungseinheit und Testvorrichtung
KR100424178B1 (ko) * 2001-09-20 2004-03-24 주식회사 하이닉스반도체 반도체 메모리 장치의 내부어드레스 발생회로
US6618314B1 (en) 2002-03-04 2003-09-09 Cypress Semiconductor Corp. Method and architecture for reducing the power consumption for memory devices in refresh operations
US6992534B2 (en) * 2003-10-14 2006-01-31 Micron Technology, Inc. Circuits and methods of temperature compensation for refresh oscillator
US20050144576A1 (en) * 2003-12-25 2005-06-30 Nec Electronics Corporation Design method for semiconductor circuit device, design method for semiconductor circuit, and semiconductor circuit device
US7236061B2 (en) * 2005-05-03 2007-06-26 Macronix International Co., Ltd. Temperature compensated refresh clock circuit for memory circuits
KR100654003B1 (ko) * 2005-11-29 2006-12-06 주식회사 하이닉스반도체 반도체 장치의 셀프 리프레쉬 주기 측정회로
JP5038742B2 (ja) * 2007-03-01 2012-10-03 ルネサスエレクトロニクス株式会社 セルフリフレッシュ制御回路、半導体装置
JP2016092536A (ja) * 2014-10-31 2016-05-23 ルネサスエレクトロニクス株式会社 半導体装置
US11537464B2 (en) * 2019-06-14 2022-12-27 Micron Technology, Inc. Host-based error correction

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2617779B2 (ja) * 1988-08-31 1997-06-04 三菱電機株式会社 半導体メモリ装置
JP3009109B2 (ja) * 1989-11-07 2000-02-14 富士通株式会社 半導体集積回路

Also Published As

Publication number Publication date
US5499213A (en) 1996-03-12
ITMI931390A1 (it) 1994-12-29
ITMI931390A0 (it) 1993-06-29
KR940006137A (ko) 1994-03-23
KR0126243B1 (ko) 1997-12-26

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Legal Events

Date Code Title Description
0001 Granted
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970626