IT1248595B - Struttura di contatto interstrato di un dispositivo a semiconduttore e suo metodo di fabbricazione - Google Patents
Struttura di contatto interstrato di un dispositivo a semiconduttore e suo metodo di fabbricazioneInfo
- Publication number
- IT1248595B IT1248595B ITMI911148A ITMI911148A IT1248595B IT 1248595 B IT1248595 B IT 1248595B IT MI911148 A ITMI911148 A IT MI911148A IT MI911148 A ITMI911148 A IT MI911148A IT 1248595 B IT1248595 B IT 1248595B
- Authority
- IT
- Italy
- Prior art keywords
- manufacturing
- semiconductor device
- contact structure
- conductive layer
- connects
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5226—Via connections in a multilevel interconnection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/535—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including internal interconnections, e.g. cross-under constructions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Geometry or layout of the interconnection structure
- H01L23/5283—Cross-sectional geometry
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01014—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01056—Barium [Ba]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01057—Lanthanum [La]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01058—Cerium [Ce]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19043—Component type being a resistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30105—Capacitance
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Geometry (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019910001977A KR920017227A (ko) | 1991-02-05 | 1991-02-05 | 반도체장치의 층간콘택 구조 및 그 제조방법 |
Publications (3)
Publication Number | Publication Date |
---|---|
ITMI911148A0 ITMI911148A0 (it) | 1991-04-24 |
ITMI911148A1 ITMI911148A1 (it) | 1992-10-24 |
IT1248595B true IT1248595B (it) | 1995-01-19 |
Family
ID=19310789
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ITMI911148A IT1248595B (it) | 1991-02-05 | 1991-04-24 | Struttura di contatto interstrato di un dispositivo a semiconduttore e suo metodo di fabbricazione |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPH0613468A (ja) |
KR (1) | KR920017227A (ja) |
DE (1) | DE4113775A1 (ja) |
FR (1) | FR2672430A1 (ja) |
GB (1) | GB2252668A (ja) |
IT (1) | IT1248595B (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4403604C2 (de) * | 1994-02-05 | 1998-02-19 | A B Elektronik Gmbh | Vorrichtung zur Steuerung der Verstellung einer die Leistung einer Brennkraftmaschine bestimmenden Drosselklappe |
US5770518A (en) * | 1995-04-19 | 1998-06-23 | Advanced Micro Devices, Inc. | Semiconductor device and method of manufacturing without undercutting conductive lines |
TW480636B (en) | 1996-12-04 | 2002-03-21 | Seiko Epson Corp | Electronic component and semiconductor device, method for manufacturing and mounting thereof, and circuit board and electronic equipment |
TW571373B (en) | 1996-12-04 | 2004-01-11 | Seiko Epson Corp | Semiconductor device, circuit substrate, and electronic machine |
KR20150021742A (ko) | 2013-08-21 | 2015-03-03 | 에스케이하이닉스 주식회사 | 반도체 장치 및 그 제조 방법 |
US9269610B2 (en) * | 2014-04-15 | 2016-02-23 | Qualcomm Incorporated | Pattern between pattern for low profile substrate |
KR102610485B1 (ko) * | 2018-11-22 | 2023-12-05 | 엘지디스플레이 주식회사 | 전계발광 표시장치 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57162331A (en) * | 1981-03-31 | 1982-10-06 | Fujitsu Ltd | Forming method for wiring pattern |
JPS61193454A (ja) * | 1985-02-20 | 1986-08-27 | Mitsubishi Electric Corp | 半導体装置 |
US4708770A (en) * | 1986-06-19 | 1987-11-24 | Lsi Logic Corporation | Planarized process for forming vias in silicon wafers |
DE3902693C2 (de) * | 1988-01-30 | 1995-11-30 | Toshiba Kawasaki Kk | Mehrebenenverdrahtung für eine integrierte Halbleiterschaltungsanordnung und Verfahren zur Herstellung von Mehrebenenverdrahtungen für integrierte Halbleiterschaltungsanordnungen |
US4916514A (en) * | 1988-05-31 | 1990-04-10 | Unisys Corporation | Integrated circuit employing dummy conductors for planarity |
JPH02222162A (ja) * | 1989-02-22 | 1990-09-04 | Sharp Corp | 半導体装置の製造方法 |
JPH04127452A (ja) * | 1989-06-30 | 1992-04-28 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
JP3229973B2 (ja) * | 1993-02-12 | 2001-11-19 | 株式会社リコー | 感熱記録材料 |
-
1991
- 1991-02-05 KR KR1019910001977A patent/KR920017227A/ko not_active Application Discontinuation
- 1991-04-24 IT ITMI911148A patent/IT1248595B/it active IP Right Grant
- 1991-04-25 GB GB9108853A patent/GB2252668A/en not_active Withdrawn
- 1991-04-26 JP JP3124853A patent/JPH0613468A/ja active Pending
- 1991-04-26 DE DE4113775A patent/DE4113775A1/de not_active Withdrawn
- 1991-05-03 FR FR9105457A patent/FR2672430A1/fr active Pending
Also Published As
Publication number | Publication date |
---|---|
GB9108853D0 (en) | 1991-06-12 |
GB2252668A (en) | 1992-08-12 |
KR920017227A (ko) | 1992-09-26 |
JPH0613468A (ja) | 1994-01-21 |
ITMI911148A1 (it) | 1992-10-24 |
ITMI911148A0 (it) | 1991-04-24 |
DE4113775A1 (de) | 1992-08-13 |
FR2672430A1 (fr) | 1992-08-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
0001 | Granted |