IT1147876B - Procedimento per realizzare una metallizzazione composita a bassa resistivita' su dispositivi a semiconduttori e prodotto ottenuto - Google Patents

Procedimento per realizzare una metallizzazione composita a bassa resistivita' su dispositivi a semiconduttori e prodotto ottenuto

Info

Publication number
IT1147876B
IT1147876B IT48321/82A IT4832182A IT1147876B IT 1147876 B IT1147876 B IT 1147876B IT 48321/82 A IT48321/82 A IT 48321/82A IT 4832182 A IT4832182 A IT 4832182A IT 1147876 B IT1147876 B IT 1147876B
Authority
IT
Italy
Prior art keywords
procedure
carrying
semiconductor devices
product obtained
low resistivity
Prior art date
Application number
IT48321/82A
Other languages
English (en)
Italian (it)
Other versions
IT8248321A0 (it
Inventor
Carlton H Aspin
Jen Lo Wei
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=22990121&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=IT1147876(B) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of IT8248321A0 publication Critical patent/IT8248321A0/it
Application granted granted Critical
Publication of IT1147876B publication Critical patent/IT1147876B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
    • H10D64/662—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures
    • H10D64/663—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures the additional layers comprising a silicide layer contacting the layer of silicon, e.g. polycide gates
    • H10P76/202—
    • H10W20/40—
    • H10W20/4441—
IT48321/82A 1981-05-04 1982-04-30 Procedimento per realizzare una metallizzazione composita a bassa resistivita' su dispositivi a semiconduttori e prodotto ottenuto IT1147876B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US26066781A 1981-05-04 1981-05-04

Publications (2)

Publication Number Publication Date
IT8248321A0 IT8248321A0 (it) 1982-04-30
IT1147876B true IT1147876B (it) 1986-11-26

Family

ID=22990121

Family Applications (1)

Application Number Title Priority Date Filing Date
IT48321/82A IT1147876B (it) 1981-05-04 1982-04-30 Procedimento per realizzare una metallizzazione composita a bassa resistivita' su dispositivi a semiconduttori e prodotto ottenuto

Country Status (6)

Country Link
EP (1) EP0077813B1 (OSRAM)
JP (1) JPS58500680A (OSRAM)
DE (1) DE3268922D1 (OSRAM)
IE (1) IE53237B1 (OSRAM)
IT (1) IT1147876B (OSRAM)
WO (1) WO1982003948A1 (OSRAM)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5736844A (en) * 1980-08-15 1982-02-27 Hitachi Ltd Semiconductor device
JPS58188157A (ja) * 1982-04-28 1983-11-02 Toshiba Corp 半導体装置およびその製造方法
US4581815A (en) * 1984-03-01 1986-04-15 Advanced Micro Devices, Inc. Integrated circuit structure having intermediate metal silicide layer and method of making same
US4640004A (en) * 1984-04-13 1987-02-03 Fairchild Camera & Instrument Corp. Method and structure for inhibiting dopant out-diffusion
US4920071A (en) * 1985-03-15 1990-04-24 Fairchild Camera And Instrument Corporation High temperature interconnect system for an integrated circuit
CA1265258A (en) * 1985-03-15 1990-01-30 Michael Thomas High temperature interconnect system for an integrated circuit
JPS61224459A (ja) * 1985-03-29 1986-10-06 Toshiba Corp 半導体装置およびその製造方法
JP2577342B2 (ja) * 1985-03-30 1997-01-29 株式会社東芝 半導体装置およびその製造方法
US4821085A (en) * 1985-05-01 1989-04-11 Texas Instruments Incorporated VLSI local interconnect structure
US4811078A (en) * 1985-05-01 1989-03-07 Texas Instruments Incorporated Integrated circuit device and process with tin capacitors
US4814854A (en) * 1985-05-01 1989-03-21 Texas Instruments Incorporated Integrated circuit device and process with tin-gate transistor
US4890141A (en) * 1985-05-01 1989-12-26 Texas Instruments Incorporated CMOS device with both p+ and n+ gates
JPH0716000B2 (ja) * 1985-10-25 1995-02-22 株式会社日立製作所 半導体集積回路装置の製造方法
US5086016A (en) * 1990-10-31 1992-02-04 International Business Machines Corporation Method of making semiconductor device contact including transition metal-compound dopant source
US5364803A (en) * 1993-06-24 1994-11-15 United Microelectronics Corporation Method of preventing fluorine-induced gate oxide degradation in WSix polycide structure
JP3199015B2 (ja) 1998-02-04 2001-08-13 日本電気株式会社 半導体装置及びその製造方法
AU2003252952A1 (en) * 2002-08-06 2004-02-23 Avecia Limited Organic electronic devices
RU2250533C1 (ru) * 2003-11-06 2005-04-20 ГОУ Московский государственный институт электронной техники (технический университет) Способ изготовления полупроводникового прибора
US20090032958A1 (en) * 2007-08-03 2009-02-05 Micron Technology, Inc. Intermetallic conductors

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3434020A (en) * 1966-12-30 1969-03-18 Texas Instruments Inc Ohmic contacts consisting of a first level of molybdenum-gold mixture of gold and vanadium and a second level of molybdenum-gold
US3632436A (en) * 1969-07-11 1972-01-04 Rca Corp Contact system for semiconductor devices
US3754168A (en) * 1970-03-09 1973-08-21 Texas Instruments Inc Metal contact and interconnection system for nonhermetic enclosed semiconductor devices
US4042953A (en) * 1973-08-01 1977-08-16 Micro Power Systems, Inc. High temperature refractory metal contact assembly and multiple layer interconnect structure
JPS5365088A (en) * 1976-11-22 1978-06-10 Nec Corp Semiconductor device
US4112196A (en) * 1977-01-24 1978-09-05 National Micronetics, Inc. Beam lead arrangement for microelectronic devices
US4180596A (en) * 1977-06-30 1979-12-25 International Business Machines Corporation Method for providing a metal silicide layer on a substrate
US4128670A (en) * 1977-11-11 1978-12-05 International Business Machines Corporation Fabrication method for integrated circuits with polysilicon lines having low sheet resistance
US4276557A (en) * 1978-12-29 1981-06-30 Bell Telephone Laboratories, Incorporated Integrated semiconductor circuit structure and method for making it
US4329706A (en) * 1979-03-01 1982-05-11 International Business Machines Corporation Doped polysilicon silicide semiconductor integrated circuit interconnections
US4227944A (en) * 1979-06-11 1980-10-14 General Electric Company Methods of making composite conductive structures in integrated circuits
JPS55165652A (en) * 1979-06-12 1980-12-24 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor device
JPS5898963A (ja) * 1981-12-09 1983-06-13 Nec Corp 半導体装置

Also Published As

Publication number Publication date
DE3268922D1 (en) 1986-03-20
EP0077813B1 (en) 1986-02-05
JPS58500680A (ja) 1983-04-28
WO1982003948A1 (en) 1982-11-11
IE821036L (en) 1982-11-04
IE53237B1 (en) 1988-09-14
IT8248321A0 (it) 1982-04-30
EP0077813A1 (en) 1983-05-04
JPH0244144B2 (OSRAM) 1990-10-02
EP0077813A4 (en) 1984-02-09

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TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19940720