IT1114183B - Processo per la fabbricazione di circuiti integrati mediante tecniche di impiantamento di ioni - Google Patents
Processo per la fabbricazione di circuiti integrati mediante tecniche di impiantamento di ioniInfo
- Publication number
- IT1114183B IT1114183B IT31118/77A IT3111877A IT1114183B IT 1114183 B IT1114183 B IT 1114183B IT 31118/77 A IT31118/77 A IT 31118/77A IT 3111877 A IT3111877 A IT 3111877A IT 1114183 B IT1114183 B IT 1114183B
- Authority
- IT
- Italy
- Prior art keywords
- manufacture
- integrated circuits
- ion implantation
- implantation techniques
- techniques
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P30/00—Ion implantation into wafers, substrates or parts of devices
- H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P30/00—Ion implantation into wafers, substrates or parts of devices
- H10P30/40—Ion implantation into wafers, substrates or parts of devices into insulating materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P54/00—Cutting or separating of wafers, substrates or parts of devices
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/763,789 US4076558A (en) | 1977-01-31 | 1977-01-31 | Method of high current ion implantation and charge reduction by simultaneous kerf implant |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IT1114183B true IT1114183B (it) | 1986-01-27 |
Family
ID=25068815
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT31118/77A IT1114183B (it) | 1977-01-31 | 1977-12-22 | Processo per la fabbricazione di circuiti integrati mediante tecniche di impiantamento di ioni |
Country Status (12)
| Country | Link |
|---|---|
| US (1) | US4076558A (it) |
| JP (1) | JPS5910576B2 (it) |
| BE (1) | BE862557A (it) |
| CA (1) | CA1043474A (it) |
| CH (1) | CH632105A5 (it) |
| DE (1) | DE2801271C2 (it) |
| ES (1) | ES466448A1 (it) |
| FR (1) | FR2379163A1 (it) |
| GB (1) | GB1549971A (it) |
| IT (1) | IT1114183B (it) |
| NL (1) | NL7800851A (it) |
| SE (1) | SE425826B (it) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5839376B2 (ja) * | 1978-10-30 | 1983-08-30 | 富士通株式会社 | イオン注入法 |
| US4249962A (en) * | 1979-09-11 | 1981-02-10 | Western Electric Company, Inc. | Method of removing contaminating impurities from device areas in a semiconductor wafer |
| US4463255A (en) * | 1980-09-24 | 1984-07-31 | Varian Associates, Inc. | Apparatus for enhanced neutralization of positively charged ion beam |
| US4453086A (en) * | 1981-12-31 | 1984-06-05 | International Business Machines Corporation | Electron beam system with reduced charge buildup |
| JPS60198721A (ja) * | 1984-03-22 | 1985-10-08 | Fujitsu Ltd | 半導体装置の製造方法 |
| US5136171A (en) * | 1990-03-02 | 1992-08-04 | Varian Associates, Inc. | Charge neutralization apparatus for ion implantation system |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3507709A (en) * | 1967-09-15 | 1970-04-21 | Hughes Aircraft Co | Method of irradiating dielectriccoated semiconductor bodies with low energy electrons |
| NL6715013A (it) * | 1967-11-04 | 1969-05-06 | ||
| US3701696A (en) * | 1969-08-20 | 1972-10-31 | Gen Electric | Process for simultaneously gettering,passivating and locating a junction within a silicon crystal |
| JPS4819113B1 (it) * | 1969-08-27 | 1973-06-11 | ||
| US3728161A (en) * | 1971-12-28 | 1973-04-17 | Bell Telephone Labor Inc | Integrated circuits with ion implanted chan stops |
| US3790412A (en) * | 1972-04-07 | 1974-02-05 | Bell Telephone Labor Inc | Method of reducing the effects of particle impingement on shadow masks |
| JPS49118367A (it) * | 1973-03-12 | 1974-11-12 |
-
1977
- 1977-01-31 US US05/763,789 patent/US4076558A/en not_active Expired - Lifetime
- 1977-10-26 CA CA289,545A patent/CA1043474A/en not_active Expired
- 1977-12-20 JP JP52152517A patent/JPS5910576B2/ja not_active Expired
- 1977-12-22 IT IT31118/77A patent/IT1114183B/it active
- 1977-12-23 FR FR7739913A patent/FR2379163A1/fr active Granted
- 1977-12-30 BE BE184040A patent/BE862557A/xx not_active IP Right Cessation
-
1978
- 1978-01-06 GB GB570/78A patent/GB1549971A/en not_active Expired
- 1978-01-10 CH CH21278A patent/CH632105A5/de not_active IP Right Cessation
- 1978-01-13 DE DE2801271A patent/DE2801271C2/de not_active Expired
- 1978-01-24 NL NL7800851A patent/NL7800851A/xx not_active Application Discontinuation
- 1978-01-26 SE SE7800954A patent/SE425826B/sv not_active IP Right Cessation
- 1978-01-28 ES ES466448A patent/ES466448A1/es not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| SE425826B (sv) | 1982-11-08 |
| US4076558A (en) | 1978-02-28 |
| GB1549971A (en) | 1979-08-08 |
| ES466448A1 (es) | 1978-10-16 |
| JPS5396665A (en) | 1978-08-24 |
| NL7800851A (nl) | 1978-08-02 |
| SE7800954L (sv) | 1978-08-01 |
| CH632105A5 (de) | 1982-09-15 |
| DE2801271A1 (de) | 1978-08-03 |
| BE862557A (fr) | 1978-04-14 |
| JPS5910576B2 (ja) | 1984-03-09 |
| CA1043474A (en) | 1978-11-28 |
| DE2801271C2 (de) | 1988-01-21 |
| FR2379163A1 (fr) | 1978-08-25 |
| FR2379163B1 (it) | 1980-12-19 |
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