GB1549971A - High current ion implantation in semiconductors - Google Patents
High current ion implantation in semiconductorsInfo
- Publication number
- GB1549971A GB1549971A GB570/78A GB57078A GB1549971A GB 1549971 A GB1549971 A GB 1549971A GB 570/78 A GB570/78 A GB 570/78A GB 57078 A GB57078 A GB 57078A GB 1549971 A GB1549971 A GB 1549971A
- Authority
- GB
- United Kingdom
- Prior art keywords
- semiconductors
- ion implantation
- high current
- current ion
- implantation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000005468 ion implantation Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/3115—Doping the insulating layers
- H01L21/31155—Doping the insulating layers by ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Bipolar Transistors (AREA)
- Dicing (AREA)
- Electron Beam Exposure (AREA)
- Element Separation (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/763,789 US4076558A (en) | 1977-01-31 | 1977-01-31 | Method of high current ion implantation and charge reduction by simultaneous kerf implant |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1549971A true GB1549971A (en) | 1979-08-08 |
Family
ID=25068815
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB570/78A Expired GB1549971A (en) | 1977-01-31 | 1978-01-06 | High current ion implantation in semiconductors |
Country Status (12)
Country | Link |
---|---|
US (1) | US4076558A (en) |
JP (1) | JPS5910576B2 (en) |
BE (1) | BE862557A (en) |
CA (1) | CA1043474A (en) |
CH (1) | CH632105A5 (en) |
DE (1) | DE2801271C2 (en) |
ES (1) | ES466448A1 (en) |
FR (1) | FR2379163A1 (en) |
GB (1) | GB1549971A (en) |
IT (1) | IT1114183B (en) |
NL (1) | NL7800851A (en) |
SE (1) | SE425826B (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5839376B2 (en) * | 1978-10-30 | 1983-08-30 | 富士通株式会社 | Ion implantation method |
US4249962A (en) * | 1979-09-11 | 1981-02-10 | Western Electric Company, Inc. | Method of removing contaminating impurities from device areas in a semiconductor wafer |
US4463255A (en) * | 1980-09-24 | 1984-07-31 | Varian Associates, Inc. | Apparatus for enhanced neutralization of positively charged ion beam |
US4453086A (en) * | 1981-12-31 | 1984-06-05 | International Business Machines Corporation | Electron beam system with reduced charge buildup |
JPS60198721A (en) * | 1984-03-22 | 1985-10-08 | Fujitsu Ltd | Manufacture of semiconductor device |
US5136171A (en) * | 1990-03-02 | 1992-08-04 | Varian Associates, Inc. | Charge neutralization apparatus for ion implantation system |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3507709A (en) * | 1967-09-15 | 1970-04-21 | Hughes Aircraft Co | Method of irradiating dielectriccoated semiconductor bodies with low energy electrons |
NL6715013A (en) * | 1967-11-04 | 1969-05-06 | ||
US3701696A (en) * | 1969-08-20 | 1972-10-31 | Gen Electric | Process for simultaneously gettering,passivating and locating a junction within a silicon crystal |
JPS4819113B1 (en) * | 1969-08-27 | 1973-06-11 | ||
US3728161A (en) * | 1971-12-28 | 1973-04-17 | Bell Telephone Labor Inc | Integrated circuits with ion implanted chan stops |
US3790412A (en) * | 1972-04-07 | 1974-02-05 | Bell Telephone Labor Inc | Method of reducing the effects of particle impingement on shadow masks |
JPS49118367A (en) * | 1973-03-12 | 1974-11-12 |
-
1977
- 1977-01-31 US US05/763,789 patent/US4076558A/en not_active Expired - Lifetime
- 1977-10-26 CA CA289,545A patent/CA1043474A/en not_active Expired
- 1977-12-20 JP JP52152517A patent/JPS5910576B2/en not_active Expired
- 1977-12-22 IT IT31118/77A patent/IT1114183B/en active
- 1977-12-23 FR FR7739913A patent/FR2379163A1/en active Granted
- 1977-12-30 BE BE184040A patent/BE862557A/en not_active IP Right Cessation
-
1978
- 1978-01-06 GB GB570/78A patent/GB1549971A/en not_active Expired
- 1978-01-10 CH CH21278A patent/CH632105A5/en not_active IP Right Cessation
- 1978-01-13 DE DE2801271A patent/DE2801271C2/en not_active Expired
- 1978-01-24 NL NL7800851A patent/NL7800851A/en not_active Application Discontinuation
- 1978-01-26 SE SE7800954A patent/SE425826B/en not_active IP Right Cessation
- 1978-01-28 ES ES466448A patent/ES466448A1/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
SE425826B (en) | 1982-11-08 |
DE2801271A1 (en) | 1978-08-03 |
NL7800851A (en) | 1978-08-02 |
DE2801271C2 (en) | 1988-01-21 |
CH632105A5 (en) | 1982-09-15 |
SE7800954L (en) | 1978-08-01 |
BE862557A (en) | 1978-04-14 |
FR2379163B1 (en) | 1980-12-19 |
US4076558A (en) | 1978-02-28 |
ES466448A1 (en) | 1978-10-16 |
JPS5396665A (en) | 1978-08-24 |
JPS5910576B2 (en) | 1984-03-09 |
FR2379163A1 (en) | 1978-08-25 |
CA1043474A (en) | 1978-11-28 |
IT1114183B (en) | 1986-01-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5464460A (en) | Ion implantation method | |
JPS52142268A (en) | Electric solenoid | |
GB2000629B (en) | Improvements in electric batteries | |
JPS52150571A (en) | Vacuum breaker electrode | |
JPS55113229A (en) | High current breaker | |
GB2020896B (en) | Ion implantation | |
GB2000628B (en) | Improvements in electric batteries | |
GB2000627B (en) | Improvements in electric batteries | |
GB2060988B (en) | Solid-state electrical cells | |
JPS5321777A (en) | Vacuum breaker electrode | |
ZA786687B (en) | Methods for improving solar cell open circuit voltage | |
GB1538110A (en) | Electric cells | |
AU515897B2 (en) | Electric cell | |
GB1544008A (en) | Ion implantation | |
NZ186244A (en) | Electrolysis cells current path arrangement | |
GB1549971A (en) | High current ion implantation in semiconductors | |
GB2006514B (en) | Electric cells | |
GB1546613A (en) | Electric cells | |
JPS5313164A (en) | Power breaker | |
JPS5347939A (en) | Electric cell | |
JPS5487900A (en) | High load current passage device | |
GB1546612A (en) | Electric cells | |
GB1546611A (en) | Electric cells | |
JPS5343874A (en) | High voltage breaker contact | |
IL52933A0 (en) | Improvements in electric cells |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed [section 19, patents act 1949] | ||
PCNP | Patent ceased through non-payment of renewal fee |