FR2379163A1 - Procede d'implantation ionique permettant l'utilisation d'un courant de forte intensite - Google Patents

Procede d'implantation ionique permettant l'utilisation d'un courant de forte intensite

Info

Publication number
FR2379163A1
FR2379163A1 FR7739913A FR7739913A FR2379163A1 FR 2379163 A1 FR2379163 A1 FR 2379163A1 FR 7739913 A FR7739913 A FR 7739913A FR 7739913 A FR7739913 A FR 7739913A FR 2379163 A1 FR2379163 A1 FR 2379163A1
Authority
FR
France
Prior art keywords
implantation process
process allowing
strong current
regions
lines
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7739913A
Other languages
English (en)
Other versions
FR2379163B1 (fr
Inventor
Hans S Rupprecht
Robert O Schwenker
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2379163A1 publication Critical patent/FR2379163A1/fr
Application granted granted Critical
Publication of FR2379163B1 publication Critical patent/FR2379163B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/3115—Doping the insulating layers
    • H01L21/31155—Doping the insulating layers by ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Electron Beam Exposure (AREA)
  • Dicing (AREA)

Abstract

Procédé d'implantation ionique permettant l'utilisation d'un courant de forte intensité. Une tranche 10 de circuits intégrés à semi-conducteurs comporte une pluralité de microplaquettes séparées par des zones de traits 11 destinées à être éliminées pour assurer la séparation des dites microplaquettes. Quand on doit former des régions de type émetteur 16 par implantation ionique qui necessitent de forts courants d'implantation (0,5mA), on peut éviter la formation de charges nuisibles au niveau des ouvertures formées dans la couche de passivation. Pour cela on implante également les ions formant lesdites régions, à travers une configuration d'ouvertures 17 formée au-dessus desdites zones de traits. Application à la fabrication des dispositifs intégrés à semi-conducteurs de grande fiabilité.
FR7739913A 1977-01-31 1977-12-23 Procede d'implantation ionique permettant l'utilisation d'un courant de forte intensite Granted FR2379163A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/763,789 US4076558A (en) 1977-01-31 1977-01-31 Method of high current ion implantation and charge reduction by simultaneous kerf implant

Publications (2)

Publication Number Publication Date
FR2379163A1 true FR2379163A1 (fr) 1978-08-25
FR2379163B1 FR2379163B1 (fr) 1980-12-19

Family

ID=25068815

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7739913A Granted FR2379163A1 (fr) 1977-01-31 1977-12-23 Procede d'implantation ionique permettant l'utilisation d'un courant de forte intensite

Country Status (12)

Country Link
US (1) US4076558A (fr)
JP (1) JPS5910576B2 (fr)
BE (1) BE862557A (fr)
CA (1) CA1043474A (fr)
CH (1) CH632105A5 (fr)
DE (1) DE2801271C2 (fr)
ES (1) ES466448A1 (fr)
FR (1) FR2379163A1 (fr)
GB (1) GB1549971A (fr)
IT (1) IT1114183B (fr)
NL (1) NL7800851A (fr)
SE (1) SE425826B (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5839376B2 (ja) * 1978-10-30 1983-08-30 富士通株式会社 イオン注入法
US4249962A (en) * 1979-09-11 1981-02-10 Western Electric Company, Inc. Method of removing contaminating impurities from device areas in a semiconductor wafer
US4463255A (en) * 1980-09-24 1984-07-31 Varian Associates, Inc. Apparatus for enhanced neutralization of positively charged ion beam
US4453086A (en) * 1981-12-31 1984-06-05 International Business Machines Corporation Electron beam system with reduced charge buildup
JPS60198721A (ja) * 1984-03-22 1985-10-08 Fujitsu Ltd 半導体装置の製造方法
US5136171A (en) * 1990-03-02 1992-08-04 Varian Associates, Inc. Charge neutralization apparatus for ion implantation system

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3507709A (en) * 1967-09-15 1970-04-21 Hughes Aircraft Co Method of irradiating dielectriccoated semiconductor bodies with low energy electrons
NL6715013A (fr) * 1967-11-04 1969-05-06
US3701696A (en) * 1969-08-20 1972-10-31 Gen Electric Process for simultaneously gettering,passivating and locating a junction within a silicon crystal
JPS4819113B1 (fr) * 1969-08-27 1973-06-11
US3728161A (en) * 1971-12-28 1973-04-17 Bell Telephone Labor Inc Integrated circuits with ion implanted chan stops
US3790412A (en) * 1972-04-07 1974-02-05 Bell Telephone Labor Inc Method of reducing the effects of particle impingement on shadow masks
JPS49118367A (fr) * 1973-03-12 1974-11-12

Also Published As

Publication number Publication date
CH632105A5 (de) 1982-09-15
JPS5396665A (en) 1978-08-24
SE7800954L (sv) 1978-08-01
NL7800851A (nl) 1978-08-02
JPS5910576B2 (ja) 1984-03-09
ES466448A1 (es) 1978-10-16
SE425826B (sv) 1982-11-08
DE2801271A1 (de) 1978-08-03
BE862557A (fr) 1978-04-14
DE2801271C2 (de) 1988-01-21
FR2379163B1 (fr) 1980-12-19
IT1114183B (it) 1986-01-27
CA1043474A (fr) 1978-11-28
US4076558A (en) 1978-02-28
GB1549971A (en) 1979-08-08

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Legal Events

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