IT1058440B - Metodo per la produzione di singoli cristalli per crescita dalla fase vapore - Google Patents

Metodo per la produzione di singoli cristalli per crescita dalla fase vapore

Info

Publication number
IT1058440B
IT1058440B IT21264/76A IT2126476A IT1058440B IT 1058440 B IT1058440 B IT 1058440B IT 21264/76 A IT21264/76 A IT 21264/76A IT 2126476 A IT2126476 A IT 2126476A IT 1058440 B IT1058440 B IT 1058440B
Authority
IT
Italy
Prior art keywords
growth
production
single crystals
steam phase
steam
Prior art date
Application number
IT21264/76A
Other languages
English (en)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from FR7508615A external-priority patent/FR2304401A1/fr
Priority claimed from FR7508613A external-priority patent/FR2304399A1/fr
Priority claimed from FR7508612A external-priority patent/FR2304398A1/fr
Application filed by Philips Nv filed Critical Philips Nv
Application granted granted Critical
Publication of IT1058440B publication Critical patent/IT1058440B/it

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G15/00—Compounds of gallium, indium or thallium
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S118/00—Coating apparatus
    • Y10S118/90—Semiconductor vapor doping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/003—Anneal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/006—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/025—Deposition multi-step
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/057—Gas flow control
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/065—Gp III-V generic compounds-processing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/113—Nitrides of boron or aluminum or gallium
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/15—Silicon on sapphire SOS

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
IT21264/76A 1975-03-19 1976-03-16 Metodo per la produzione di singoli cristalli per crescita dalla fase vapore IT1058440B (it)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR7508615A FR2304401A1 (fr) 1975-03-19 1975-03-19 Procede d'obtention de monocristaux de nitrure de gallium de grande surface
FR7508613A FR2304399A1 (fr) 1975-03-19 1975-03-19 Procede d'obtention par croissance cristalline en phase vapeur de monocristaux de nitrure de gallium
FR7508612A FR2304398A1 (fr) 1975-03-19 1975-03-19 Procede d'obtention par heteroepitaxie en phase vapeur de monocristaux de nitrure de gallium

Publications (1)

Publication Number Publication Date
IT1058440B true IT1058440B (it) 1982-04-10

Family

ID=27250428

Family Applications (1)

Application Number Title Priority Date Filing Date
IT21264/76A IT1058440B (it) 1975-03-19 1976-03-16 Metodo per la produzione di singoli cristalli per crescita dalla fase vapore

Country Status (6)

Country Link
US (1) US4144116A (it)
JP (1) JPS51117199A (it)
CA (1) CA1071068A (it)
DE (1) DE2609907C2 (it)
GB (1) GB1536586A (it)
IT (1) IT1058440B (it)

Families Citing this family (76)

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US4279670A (en) * 1979-08-06 1981-07-21 Raytheon Company Semiconductor device manufacturing methods utilizing a predetermined flow of reactive substance over a dopant material
JPS6055996B2 (ja) * 1979-12-05 1985-12-07 松下電器産業株式会社 電場発光半導体装置
JPS57191822U (it) * 1981-06-01 1982-12-04
JPS5840522U (ja) * 1981-09-10 1983-03-17 三菱重工業株式会社 内燃機関の燃焼室
JPS5867921A (ja) * 1981-10-16 1983-04-22 Mitsubishi Heavy Ind Ltd 内燃機関の燃焼室
JPS5867922A (ja) * 1981-10-17 1983-04-22 Mitsubishi Heavy Ind Ltd 内燃機関の燃焼室
JPS5870022A (ja) * 1981-10-23 1983-04-26 Mitsubishi Heavy Ind Ltd 内燃機関の燃焼室
JPS5863325U (ja) * 1981-10-23 1983-04-28 三菱重工業株式会社 内燃機関の燃焼室
JPS5875919U (ja) * 1981-11-18 1983-05-23 三菱自動車工業株式会社 デイ−ゼルエンジンの燃焼室
JPS5913631U (ja) * 1982-07-16 1984-01-27 三菱自動車工業株式会社 デイ−ゼルエンジンの燃焼室
US4671845A (en) * 1985-03-22 1987-06-09 The United States Of America As Represented By The Secretary Of The Navy Method for producing high quality germanium-germanium nitride interfaces for germanium semiconductors and device produced thereby
JPS62119196A (ja) * 1985-11-18 1987-05-30 Univ Nagoya 化合物半導体の成長方法
JPH0223789Y2 (it) * 1987-02-24 1990-06-28
US4901670A (en) * 1988-08-22 1990-02-20 Santa Barbara Research Center Elemental mercury source for metal-organic chemical vapor deposition
US4985281A (en) * 1988-08-22 1991-01-15 Santa Barbara Research Center Elemental mercury source for metal-organic chemical vapor deposition
JPH02188912A (ja) * 1989-01-17 1990-07-25 Nec Corp ３‐５族化合物半導体の選択成長方法
US7235819B2 (en) * 1991-03-18 2007-06-26 The Trustees Of Boston University Semiconductor device having group III nitride buffer layer and growth layers
US5633192A (en) * 1991-03-18 1997-05-27 Boston University Method for epitaxially growing gallium nitride layers
EP0576566B1 (en) * 1991-03-18 1999-05-26 Trustees Of Boston University A method for the preparation and doping of highly insulating monocrystalline gallium nitride thin films
JP2540791B2 (ja) * 1991-11-08 1996-10-09 日亜化学工業株式会社 ｐ型窒化ガリウム系化合物半導体の製造方法。
PL173917B1 (pl) * 1993-08-10 1998-05-29 Ct Badan Wysokocisnieniowych P Sposób wytwarzania krystalicznej struktury wielowarstwowej
US5587014A (en) * 1993-12-22 1996-12-24 Sumitomo Chemical Company, Limited Method for manufacturing group III-V compound semiconductor crystals
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US5677538A (en) * 1995-07-07 1997-10-14 Trustees Of Boston University Photodetectors using III-V nitrides
JP2947156B2 (ja) * 1996-02-29 1999-09-13 双葉電子工業株式会社 蛍光体の製造方法
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US3888705A (en) * 1973-12-19 1975-06-10 Nasa Vapor phase growth of groups iii-v compounds by hydrogen chloride transport of the elements

Also Published As

Publication number Publication date
CA1071068A (en) 1980-02-05
DE2609907C2 (de) 1983-10-27
JPS5617319B2 (it) 1981-04-21
JPS51117199A (en) 1976-10-15
US4144116A (en) 1979-03-13
DE2609907A1 (de) 1976-10-07
GB1536586A (en) 1978-12-20

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