FR2304398A1 - Procede d'obtention par heteroepitaxie en phase vapeur de monocristaux de nitrure de gallium - Google Patents

Procede d'obtention par heteroepitaxie en phase vapeur de monocristaux de nitrure de gallium

Info

Publication number
FR2304398A1
FR2304398A1 FR7508612A FR7508612A FR2304398A1 FR 2304398 A1 FR2304398 A1 FR 2304398A1 FR 7508612 A FR7508612 A FR 7508612A FR 7508612 A FR7508612 A FR 7508612A FR 2304398 A1 FR2304398 A1 FR 2304398A1
Authority
FR
France
Prior art keywords
vapour phase
ammonia
partial pressure
hydrogen chloride
halide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7508612A
Other languages
English (en)
Other versions
FR2304398B1 (fr
Inventor
Guy Jacob
Jean Hallais
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7508612A priority Critical patent/FR2304398A1/fr
Priority to CA247,472A priority patent/CA1071068A/fr
Priority to DE2609907A priority patent/DE2609907C2/de
Priority to IT21264/76A priority patent/IT1058440B/it
Priority to GB10499/76A priority patent/GB1536586A/en
Priority to US05/667,690 priority patent/US4144116A/en
Priority to JP51029398A priority patent/JPS51117199A/ja
Publication of FR2304398A1 publication Critical patent/FR2304398A1/fr
Application granted granted Critical
Publication of FR2304398B1 publication Critical patent/FR2304398B1/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G15/00—Compounds of gallium, indium or thallium
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Electroluminescent Light Sources (AREA)
FR7508612A 1975-03-19 1975-03-19 Procede d'obtention par heteroepitaxie en phase vapeur de monocristaux de nitrure de gallium Granted FR2304398A1 (fr)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FR7508612A FR2304398A1 (fr) 1975-03-19 1975-03-19 Procede d'obtention par heteroepitaxie en phase vapeur de monocristaux de nitrure de gallium
CA247,472A CA1071068A (fr) 1975-03-19 1976-03-09 Methode de fabrication de cristaux simples par croissance a partir de la phase gazeuse
DE2609907A DE2609907C2 (de) 1975-03-19 1976-03-10 Verfahren zum epitaktischen Abscheiden von einkristallinem Galliumnitrid auf einem Substrat
IT21264/76A IT1058440B (it) 1975-03-19 1976-03-16 Metodo per la produzione di singoli cristalli per crescita dalla fase vapore
GB10499/76A GB1536586A (en) 1975-03-19 1976-03-16 Method of manufacturing single crystals of gallium nitride by growth from the vapour phase
US05/667,690 US4144116A (en) 1975-03-19 1976-03-17 Vapor deposition of single crystal gallium nitride
JP51029398A JPS51117199A (en) 1975-03-19 1976-03-19 Method of making single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7508612A FR2304398A1 (fr) 1975-03-19 1975-03-19 Procede d'obtention par heteroepitaxie en phase vapeur de monocristaux de nitrure de gallium

Publications (2)

Publication Number Publication Date
FR2304398A1 true FR2304398A1 (fr) 1976-10-15
FR2304398B1 FR2304398B1 (fr) 1977-11-18

Family

ID=9152781

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7508612A Granted FR2304398A1 (fr) 1975-03-19 1975-03-19 Procede d'obtention par heteroepitaxie en phase vapeur de monocristaux de nitrure de gallium

Country Status (1)

Country Link
FR (1) FR2304398A1 (fr)

Also Published As

Publication number Publication date
FR2304398B1 (fr) 1977-11-18

Similar Documents

Publication Publication Date Title
Neumayer et al. Growth of group III nitrides. A review of precursors and techniques
GB1536586A (en) Method of manufacturing single crystals of gallium nitride by growth from the vapour phase
US6406540B1 (en) Process and apparatus for the growth of nitride materials
EP2570523B1 (fr) Procédé pour la production de gaz de trichlorure de gallium et procédé pour la production de cristal semi-conducteur au nitrure
JP2000044400A5 (fr)
Miehr et al. The first monomeric, volatile bis‐azide single‐source precursor to Gallium nitride thin films
Shintani et al. Kinetics of the epitaxial growth of GaN using Ga, HCl and NH3
Elwell et al. Crystal growth of gallium nitride
EP0801156A3 (fr) Procédé d'épitaxie en phase vapeur d'un composé semi-conducteur
US7303632B2 (en) Vapor assisted growth of gallium nitride
JPS6065798A (ja) 窒化ガリウム単結晶の成長方法
JPS5815480B2 (ja) チツカガリウムタンケツシヨウノ セイチヨウホウホウ
FR2304398A1 (fr) Procede d'obtention par heteroepitaxie en phase vapeur de monocristaux de nitrure de gallium
FR2304401A1 (fr) Procede d'obtention de monocristaux de nitrure de gallium de grande surface
FR2304399A1 (fr) Procede d'obtention par croissance cristalline en phase vapeur de monocristaux de nitrure de gallium
Zhou et al. Growth mechanisms in excimer laser photolytic deposition of gallium nitride at 500 C
JP4034261B2 (ja) Ｉｉｉ族窒化物の製造方法
Ilegems Vapor epitaxy of gallium nitride
JPS6221758B2 (fr)
JPH0754806B2 (ja) 化合物半導体単結晶膜の成長方法
JPS5924760B2 (ja) マグネシアスピネルの気相成長方法
KR100472630B1 (ko) 복수의 질화물 기판 성장 장치
JPH09186091A (ja) Ｉｉｉ−ｖ族化合物半導体の製造方法
JPS63103894A (ja) 窒化ガリウム結晶の成長方法
JPS62183511A (ja) 化合物半導体単結晶膜の成長方法

Legal Events

Date Code Title Description
CA Change of address
CD Change of name or company name
ST Notification of lapse