IN2015DN02878A - - Google Patents
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- IN2015DN02878A IN2015DN02878A IN2878DEN2015A IN2015DN02878A IN 2015DN02878 A IN2015DN02878 A IN 2015DN02878A IN 2878DEN2015 A IN2878DEN2015 A IN 2878DEN2015A IN 2015DN02878 A IN2015DN02878 A IN 2015DN02878A
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- circuit layer
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- semiconductor element
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- C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
- C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
- C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
- C04B37/026—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used consisting of metals or metal salts
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- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
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- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
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JP2012224257A JP5664625B2 (ja) | 2012-10-09 | 2012-10-09 | 半導体装置、セラミックス回路基板及び半導体装置の製造方法 |
PCT/JP2013/077217 WO2014057902A1 (ja) | 2012-10-09 | 2013-10-07 | 半導体装置、セラミックス回路基板及び半導体装置の製造方法 |
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AT513747B1 (de) | 2013-02-28 | 2014-07-15 | Mikroelektronik Ges Mit Beschränkter Haftung Ab | Bestückungsverfahren für Schaltungsträger und Schaltungsträger |
TW201543720A (zh) * | 2014-05-06 | 2015-11-16 | Genesis Photonics Inc | 封裝結構及其製備方法 |
JP6565527B2 (ja) * | 2014-09-30 | 2019-08-28 | 三菱マテリアル株式会社 | Ag下地層付パワーモジュール用基板及びパワーモジュール |
EP3236495B1 (en) * | 2014-12-16 | 2019-09-11 | Kyocera Corporation | Circuit substrate and electronic device |
JP6481409B2 (ja) * | 2015-02-19 | 2019-03-13 | 三菱マテリアル株式会社 | パワーモジュール用基板及びパワーモジュール |
JP6613929B2 (ja) * | 2016-02-01 | 2019-12-04 | 三菱マテリアル株式会社 | Ag下地層付き金属部材、Ag下地層付き絶縁回路基板、半導体装置、ヒートシンク付き絶縁回路基板、及び、Ag下地層付き金属部材の製造方法 |
JP6677886B2 (ja) * | 2016-02-29 | 2020-04-08 | 三菱マテリアル株式会社 | 半導体装置 |
US9905532B2 (en) | 2016-03-09 | 2018-02-27 | Toyota Motor Engineering & Manufacturing North America, Inc. | Methods and apparatuses for high temperature bonding and bonded substrates having variable porosity distribution formed therefrom |
JP6683003B2 (ja) | 2016-05-11 | 2020-04-15 | 日亜化学工業株式会社 | 半導体素子、半導体装置及び半導体素子の製造方法 |
JP6720747B2 (ja) | 2016-07-19 | 2020-07-08 | 日亜化学工業株式会社 | 半導体装置、基台及びそれらの製造方法 |
MY181313A (en) * | 2016-08-22 | 2020-12-21 | Senju Metal Industry Co | Metallic sintered bonding body and die bonding method |
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-
2012
- 2012-10-09 JP JP2012224257A patent/JP5664625B2/ja not_active Expired - Fee Related
-
2013
- 2013-10-04 TW TW102136018A patent/TWI609462B/zh not_active IP Right Cessation
- 2013-10-07 EP EP13846215.5A patent/EP2908333A4/en not_active Withdrawn
- 2013-10-07 IN IN2878DEN2015 patent/IN2015DN02878A/en unknown
- 2013-10-07 KR KR1020157008678A patent/KR102163532B1/ko not_active Expired - Fee Related
- 2013-10-07 WO PCT/JP2013/077217 patent/WO2014057902A1/ja active Application Filing
- 2013-10-07 CN CN201380052142.6A patent/CN104704618B/zh not_active Expired - Fee Related
- 2013-10-07 US US14/433,764 patent/US9401340B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR102163532B1 (ko) | 2020-10-08 |
KR20150063065A (ko) | 2015-06-08 |
EP2908333A4 (en) | 2016-06-08 |
WO2014057902A1 (ja) | 2014-04-17 |
EP2908333A1 (en) | 2015-08-19 |
TWI609462B (zh) | 2017-12-21 |
US9401340B2 (en) | 2016-07-26 |
CN104704618B (zh) | 2017-08-08 |
JP5664625B2 (ja) | 2015-02-04 |
JP2014078558A (ja) | 2014-05-01 |
CN104704618A (zh) | 2015-06-10 |
US20150255419A1 (en) | 2015-09-10 |
TW201421618A (zh) | 2014-06-01 |
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