IN2015DN02030A - - Google Patents

Info

Publication number
IN2015DN02030A
IN2015DN02030A IN2030DEN2015A IN2015DN02030A IN 2015DN02030 A IN2015DN02030 A IN 2015DN02030A IN 2030DEN2015 A IN2030DEN2015 A IN 2030DEN2015A IN 2015DN02030 A IN2015DN02030 A IN 2015DN02030A
Authority
IN
India
Prior art keywords
wafer
discloses
group iii
iii nitride
present
Prior art date
Application number
Other languages
English (en)
Inventor
Tadao Hashimoto
Edward Letts
Sierra Hoff
Original Assignee
Sixpoint Materials Inc
Seoul Semiconductor Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=48050922&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=IN2015DN02030(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Sixpoint Materials Inc, Seoul Semiconductor Co Ltd filed Critical Sixpoint Materials Inc
Publication of IN2015DN02030A publication Critical patent/IN2015DN02030A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/852—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs being Group III-V materials comprising three or more elements, e.g. AlGaN or InAsSbP
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/10—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes
    • C30B7/105—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes using ammonia as solvent, i.e. ammonothermal processes
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/08—Etching
    • C30B33/10—Etching in solutions or melts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02013—Grinding, lapping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02019—Chemical etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
IN2030DEN2015 2012-08-28 2013-03-15 IN2015DN02030A (enExample)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201261694119P 2012-08-28 2012-08-28
PCT/US2013/032006 WO2014035481A1 (en) 2012-08-28 2013-03-15 Group iii nitride wafer and its production method

Publications (1)

Publication Number Publication Date
IN2015DN02030A true IN2015DN02030A (enExample) 2015-08-14

Family

ID=48050922

Family Applications (1)

Application Number Title Priority Date Filing Date
IN2030DEN2015 IN2015DN02030A (enExample) 2012-08-28 2013-03-15

Country Status (8)

Country Link
US (2) US9543393B2 (enExample)
EP (1) EP2890537A1 (enExample)
JP (1) JP6144347B2 (enExample)
KR (1) KR101895035B1 (enExample)
CN (1) CN104781057B (enExample)
IN (1) IN2015DN02030A (enExample)
TW (1) TWI621163B (enExample)
WO (1) WO2014035481A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150337457A1 (en) * 2006-04-07 2015-11-26 Sixpoint Materials, Inc. Group iii nitride bulk crystals and their fabrication method
US9518340B2 (en) 2006-04-07 2016-12-13 Sixpoint Materials, Inc. Method of growing group III nitride crystals
IN2015DN02030A (enExample) 2012-08-28 2015-08-14 Sixpoint Materials Inc
KR102096421B1 (ko) 2012-09-25 2020-04-02 식스포인트 머터리얼즈 인코퍼레이티드 Iii 족 질화물 결정의 성장 방법
JP6140291B2 (ja) 2012-09-26 2017-05-31 シックスポイント マテリアルズ， インコーポレイテッド Ｉｉｉ族窒化物ウエハおよび製作方法および試験方法
JP6477501B2 (ja) 2014-01-17 2019-03-06 三菱ケミカル株式会社 ＧａＮ基板、ＧａＮ基板の製造方法、ＧａＮ結晶の製造方法および半導体デバイスの製造方法
JP6292080B2 (ja) * 2014-08-21 2018-03-14 三菱ケミカル株式会社 非極性または半極性ＧａＮ基板
US10355115B2 (en) 2016-12-23 2019-07-16 Sixpoint Materials, Inc. Electronic device using group III nitride semiconductor and its fabrication method
CN106783579B (zh) * 2016-12-29 2019-12-13 苏州纳维科技有限公司 Iii族氮化物衬底及其制备方法
WO2019066787A1 (en) 2017-09-26 2019-04-04 Sixpoint Materials, Inc. CRYSTALLINE GERM FOR THE GROWTH OF A SOLID GALLIUM NITRIDE CRYSTAL IN SUPERCRITICAL AMMONIA AND METHOD OF MANUFACTURE
CN108074834A (zh) * 2018-01-08 2018-05-25 中国电子科技集团公司第四十六研究所 一种用于具有极性的异形晶片的极性面判定方法
KR102126186B1 (ko) * 2018-06-27 2020-06-24 경희대학교 산학협력단 질화 갈륨 기판의 제조 방법
TWI836391B (zh) * 2022-03-29 2024-03-21 兆遠科技股份有限公司 脆軟基板及脆軟基板製作方法

Family Cites Families (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5984998A (en) 1997-11-14 1999-11-16 American Iron And Steel Institute Method and apparatus for off-gas composition sensing
CN1446142A (zh) * 2000-08-07 2003-10-01 Memc电子材料有限公司 用双面抛光加工半导体晶片的方法
US7072034B2 (en) * 2001-06-08 2006-07-04 Kla-Tencor Corporation Systems and methods for inspection of specimen surfaces
HUP0401866A3 (en) 2001-06-06 2005-12-28 Nichia Corp Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride
US6488767B1 (en) * 2001-06-08 2002-12-03 Advanced Technology Materials, Inc. High surface quality GaN wafer and method of fabricating same
AU2002347692C1 (en) 2001-10-26 2008-03-06 Ammono Sp. Zo.O. Bulk monocrystalline gallium nitride
US7638346B2 (en) 2001-12-24 2009-12-29 Crystal Is, Inc. Nitride semiconductor heterostructures and related methods
US7022992B2 (en) 2002-01-17 2006-04-04 American Air Liquide, Inc. Method and apparatus for real-time monitoring of furnace flue gases
PL224993B1 (pl) 2002-12-11 2017-02-28 Ammono Spółka Z Ograniczoną Odpowiedzialnością Sposób otrzymywania objętościowego monokrystalicznego azotku zawierającego gal
US7098487B2 (en) 2002-12-27 2006-08-29 General Electric Company Gallium nitride crystal and method of making same
US7323256B2 (en) * 2003-11-13 2008-01-29 Cree, Inc. Large area, uniformly low dislocation density GaN substrate and process for making the same
KR100541111B1 (ko) 2004-06-25 2006-01-11 삼성전기주식회사 다파장 반도체 레이저 제조방법
DE102004039076A1 (de) 2004-08-12 2006-02-23 Sms Demag Ag Berührungslose Abgasmessung mittels FTIR-Spektroskopie an metallurgischen Aggregaten
US20060124956A1 (en) 2004-12-13 2006-06-15 Hui Peng Quasi group III-nitride substrates and methods of mass production of the same
JP4849296B2 (ja) 2005-04-11 2012-01-11 日立電線株式会社 ＧａＮ基板
JP4792802B2 (ja) * 2005-04-26 2011-10-12 住友電気工業株式会社 Ｉｉｉ族窒化物結晶の表面処理方法
JP5010597B2 (ja) 2005-07-08 2012-08-29 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 耐圧釜を用いた超臨界アンモニア中でのｉｉｉ族窒化物結晶の成長方法
JP4696886B2 (ja) * 2005-12-08 2011-06-08 日立電線株式会社 自立した窒化ガリウム単結晶基板の製造方法、および窒化物半導体素子の製造方法
US8435879B2 (en) 2005-12-12 2013-05-07 Kyma Technologies, Inc. Method for making group III nitride articles
JP4803717B2 (ja) 2005-12-13 2011-10-26 株式会社タカトリ ワイヤソー
US7878883B2 (en) * 2006-01-26 2011-02-01 Memc Electronics Materials, Inc. Wire saw ingot slicing system and method with ingot preheating, web preheating, slurry temperature control and/or slurry flow rate control
JP4930081B2 (ja) * 2006-04-03 2012-05-09 住友電気工業株式会社 ＧａＮ結晶基板
WO2007117689A2 (en) 2006-04-07 2007-10-18 The Regents Of The University Of California Growing large surface area gallium nitride crystals
US9518340B2 (en) 2006-04-07 2016-12-13 Sixpoint Materials, Inc. Method of growing group III nitride crystals
WO2007125914A1 (ja) * 2006-04-28 2007-11-08 Sumitomo Electric Industries, Ltd. 窒化ガリウム結晶を作製する方法および窒化ガリウムウエハ
JP5332168B2 (ja) * 2006-11-17 2013-11-06 住友電気工業株式会社 Ｉｉｉ族窒化物結晶の製造方法
US8323406B2 (en) 2007-01-17 2012-12-04 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
CN100592539C (zh) 2007-09-12 2010-02-24 泰谷光电科技股份有限公司 发光二极管元件的制造方法
JP4395812B2 (ja) * 2008-02-27 2010-01-13 住友電気工業株式会社 窒化物半導体ウエハ−加工方法
EP2281076A1 (en) * 2008-06-04 2011-02-09 Sixpoint Materials, Inc. Methods for producing improved crystallinty group iii-nitride crystals from initial group iii-nitride seed by ammonothermal growth
JP5631746B2 (ja) 2008-06-04 2014-11-26 シックスポイント マテリアルズ， インコーポレイテッド Ｉｉｉ族窒化物結晶を成長させるための高圧ベッセル、ならびに高圧ベッセルおよびｉｉｉ族窒化物結晶を用いてｉｉｉ族窒化物結晶を成長させる方法
EP2286007B1 (en) 2008-06-12 2018-04-04 SixPoint Materials, Inc. Method for testing gallium nitride wafers and method for producing gallium nitride wafers
WO2009154788A2 (en) 2008-06-20 2009-12-23 Ineos Usa Llc Methods for sequestering carbon dioxide into alcohols via gasification fermentation
US20120000415A1 (en) 2010-06-18 2012-01-05 Soraa, Inc. Large Area Nitride Crystal and Method for Making It
JP5475772B2 (ja) 2008-07-11 2014-04-16 サンーゴバン アブレイシブズ，インコーポレイティド ワイヤスライシングシステム
PL394857A1 (pl) 2008-08-07 2011-09-26 Sorra, Inc. Sposób amonotermalnego wytwarzania kryształów ciągnionych azotku galu na dużą skalę
US8979999B2 (en) 2008-08-07 2015-03-17 Soraa, Inc. Process for large-scale ammonothermal manufacturing of gallium nitride boules
US8148801B2 (en) * 2008-08-25 2012-04-03 Soraa, Inc. Nitride crystal with removable surface layer and methods of manufacture
US8680581B2 (en) * 2008-12-26 2014-03-25 Toyoda Gosei Co., Ltd. Method for producing group III nitride semiconductor and template substrate
WO2010088046A1 (en) 2009-01-30 2010-08-05 Bp Corporation North America Inc. Seed layers and process of manufacturing seed layers
WO2010113237A1 (ja) 2009-04-03 2010-10-07 パナソニック株式会社 窒化物系半導体素子およびその製造方法
JP2011100860A (ja) * 2009-11-06 2011-05-19 Sumitomo Electric Ind Ltd イオン注入ｉｉｉ族窒化物半導体基板ならびにｉｉｉ族窒化物半導体層接合基板およびｉｉｉ族窒化物半導体デバイスの製造方法
JP5471387B2 (ja) * 2009-12-09 2014-04-16 三菱化学株式会社 Ｉｉｉ族窒化物結晶半導体基板の製造方法、及びｉｉｉ族窒化物結晶半導体基板
JP5757068B2 (ja) 2010-08-02 2015-07-29 住友電気工業株式会社 ＧａＮ結晶の成長方法
IN2015DN02030A (enExample) 2012-08-28 2015-08-14 Sixpoint Materials Inc
KR102096421B1 (ko) 2012-09-25 2020-04-02 식스포인트 머터리얼즈 인코퍼레이티드 Iii 족 질화물 결정의 성장 방법
JP6140291B2 (ja) 2012-09-26 2017-05-31 シックスポイント マテリアルズ， インコーポレイテッド Ｉｉｉ族窒化物ウエハおよび製作方法および試験方法

Also Published As

Publication number Publication date
CN104781057A (zh) 2015-07-15
KR20150088993A (ko) 2015-08-04
TW201413807A (zh) 2014-04-01
CN104781057B (zh) 2018-04-24
KR101895035B1 (ko) 2018-09-04
JP2015529626A (ja) 2015-10-08
US20140061662A1 (en) 2014-03-06
US20140065796A1 (en) 2014-03-06
WO2014035481A1 (en) 2014-03-06
US9543393B2 (en) 2017-01-10
US8921231B2 (en) 2014-12-30
EP2890537A1 (en) 2015-07-08
TWI621163B (zh) 2018-04-11
JP6144347B2 (ja) 2017-06-07

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