IN2015DN00029A - - Google Patents

Info

Publication number
IN2015DN00029A
IN2015DN00029A IN29DEN2015A IN2015DN00029A IN 2015DN00029 A IN2015DN00029 A IN 2015DN00029A IN 29DEN2015 A IN29DEN2015 A IN 29DEN2015A IN 2015DN00029 A IN2015DN00029 A IN 2015DN00029A
Authority
IN
India
Prior art keywords
layer
emitter
regions
conductivity type
passivating
Prior art date
Application number
Other languages
English (en)
Inventor
Christophe Ballif
Jonas Geissbühler
Original Assignee
Ecole Polytech
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ecole Polytech filed Critical Ecole Polytech
Publication of IN2015DN00029A publication Critical patent/IN2015DN00029A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
    • H01L31/03762—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells; solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02002—Arrangements for conducting electric current to or from the device in operations
    • H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
    • H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
IN29DEN2015 2012-06-29 2012-06-29 IN2015DN00029A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2012/062776 WO2014000826A1 (en) 2012-06-29 2012-06-29 Solar cell

Publications (1)

Publication Number Publication Date
IN2015DN00029A true IN2015DN00029A (ja) 2015-05-22

Family

ID=46420202

Family Applications (1)

Application Number Title Priority Date Filing Date
IN29DEN2015 IN2015DN00029A (ja) 2012-06-29 2012-06-29

Country Status (6)

Country Link
US (1) US20150144184A1 (ja)
EP (1) EP2867926B1 (ja)
JP (1) JP2015525961A (ja)
CN (1) CN104412394B (ja)
IN (1) IN2015DN00029A (ja)
WO (1) WO2014000826A1 (ja)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015118740A1 (ja) * 2014-02-06 2015-08-13 パナソニックＩｐマネジメント株式会社 太陽電池
JP6350858B2 (ja) * 2014-05-26 2018-07-04 パナソニックＩｐマネジメント株式会社 太陽電池の製造方法及び太陽電池
JP6422455B2 (ja) * 2016-02-08 2018-11-14 三菱電機株式会社 光電変換装置および光電変換装置の製造方法
CN108461570A (zh) * 2018-03-12 2018-08-28 南昌大学 一种晶体硅双面太阳电池结构
CN108346707A (zh) * 2018-03-12 2018-07-31 南昌大学 一种进光区域无重掺杂层遮挡的异质结晶体硅双面太阳电池结构
CN108346706A (zh) * 2018-03-12 2018-07-31 南昌大学 一种局域发射极同质结晶体硅双面太阳电池结构
CN108336178A (zh) * 2018-03-12 2018-07-27 南昌大学 一种晶硅异质结双面太阳电池结构
CN108336156A (zh) * 2018-03-12 2018-07-27 南昌大学 一种具有hac-d特征的晶体硅双面太阳电池结构
CN108336160A (zh) * 2018-03-12 2018-07-27 南昌大学 一种钝化进光层的晶体硅双面太阳电池结构
CN108336159A (zh) * 2018-03-12 2018-07-27 南昌大学 一种异质结晶体硅双面太阳电池结构
CN108461569B (zh) * 2018-03-12 2020-07-14 南昌大学 一种具有局域发射极特性的Si基双面太阳电池结构
CN108305910A (zh) * 2018-03-12 2018-07-20 南昌大学 一种同质结晶体硅双面太阳电池结构
CN108365024A (zh) * 2018-03-12 2018-08-03 南昌大学 一种具有局域发射极特征的硅基同质结双面太阳电池结构
CN108336155A (zh) * 2018-03-12 2018-07-27 南昌大学 一种hac-d晶体硅双面太阳电池结构
CN108447935A (zh) * 2018-03-12 2018-08-24 南昌大学 一种钝化进光层的局域发射极晶体硅双面太阳电池结构
CN108336157A (zh) * 2018-03-12 2018-07-27 南昌大学 一种局域非晶硅发射极晶体硅背场的双面太阳电池结构
CN108461553A (zh) * 2018-03-12 2018-08-28 南昌大学 一种具有局域非晶硅/晶体硅异质结特性的双面太阳电池结构
CN108336164A (zh) * 2018-03-12 2018-07-27 南昌大学 一种局域非晶硅/晶体硅异质结双面太阳电池结构
CN108336158A (zh) * 2018-03-12 2018-07-27 南昌大学 一种进光区域无重掺杂层遮挡的同质结晶体硅双面太阳电池结构
CN108336176A (zh) * 2018-03-12 2018-07-27 南昌大学 一种Si基局域发射极双面太阳电池结构
CN110896107A (zh) * 2018-09-13 2020-03-20 福建金石能源有限公司 一种双面发电的背接触异质结太阳能电池及其制作方法
EP3624204B1 (en) * 2018-09-13 2023-04-26 IMEC vzw Selective deposition for interdigitated patterns in solar cells
CN112310232B (zh) * 2020-10-16 2023-03-24 泰州隆基乐叶光伏科技有限公司 太阳电池及生产方法、电池组件
CN113410328A (zh) * 2021-05-12 2021-09-17 北京工业大学 一种晶硅异质结太阳能电池
CN113823704A (zh) * 2021-11-23 2021-12-21 陕西众森电能科技有限公司 一种p基硅背接触太阳能电池及其制备方法
EP4318607A1 (en) 2022-08-05 2024-02-07 Zhejiang Jinko Solar Co., Ltd. Solar cell and photovoltaic module

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US4090213A (en) * 1976-06-15 1978-05-16 California Institute Of Technology Induced junction solar cell and method of fabrication
US5034068A (en) * 1990-02-23 1991-07-23 Spectrolab, Inc. Photovoltaic cell having structurally supporting open conductive back electrode structure, and method of fabricating the cell
JP3203078B2 (ja) * 1992-12-09 2001-08-27 三洋電機株式会社 光起電力素子
JP3448098B2 (ja) * 1994-05-31 2003-09-16 シャープ株式会社 結晶シリコン太陽電池
JP2003298078A (ja) * 2002-03-29 2003-10-17 Ebara Corp 光起電力素子
US20070169808A1 (en) * 2006-01-26 2007-07-26 Kherani Nazir P Solar cell
NO20061668L (no) * 2006-04-12 2007-10-15 Renewable Energy Corp Solcelle og fremgangsmate for fremstilling av samme
AU2008229050A1 (en) * 2007-03-16 2008-09-25 Bp Corporation North America Inc. Solar cells
US8198528B2 (en) * 2007-12-14 2012-06-12 Sunpower Corporation Anti-reflective coating with high optical absorption layer for backside contact solar cells
CN101814555B (zh) * 2010-04-12 2012-07-25 浙江大学 一种提高太阳电池效率的方法

Also Published As

Publication number Publication date
EP2867926A1 (en) 2015-05-06
CN104412394B (zh) 2016-11-09
JP2015525961A (ja) 2015-09-07
CN104412394A (zh) 2015-03-11
WO2014000826A1 (en) 2014-01-03
US20150144184A1 (en) 2015-05-28
EP2867926B1 (en) 2017-04-05

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