CN108336158A - 一种进光区域无重掺杂层遮挡的同质结晶体硅双面太阳电池结构 - Google Patents
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Abstract
一种进光区域无重掺杂层遮挡的同质结晶体硅双面太阳电池结构，以n型晶体硅片作为基底，发射极面分为发射极‑导电区域和钝化‑进光区域：前者由基底向外依次由重掺杂p型晶体硅发射极层和金属栅线I构成，后者由钝化减反射层I构成；背电场面分为钝化‑进光区域和背电场‑导电区域：前者由基底向外依次为重掺杂n型晶体硅层II、钝化减反射层II；后者由基底向外依次为重掺杂n型晶体硅层II、金属栅线II。本发明在保持晶体硅太阳电池双面进光特性的前提下，获得了更高开路电压和短路电流，最大程度的提高晶体硅太阳电池的发电能力。
Description
技术领域
本发明属于太阳电池领域和半导体器件领域。涉及太阳电池的制备技术。
背景技术
对于双面晶体硅太阳电池，PERT结构因为其与现有扩散制结的晶体硅产线的兼容性好，效率比较高一直受到太阳电池行业内的重点关注。但该结构的太阳电池的发展目前遇到了瓶颈，其中关键之一在于硼扩散形成的发射极层的性能以及其制备技术。为了达到更高的开路电压硼掺杂浓度一定要高，但这又会带来载流子复合的增加。而且硼掺杂层中载流子的横向传输损耗所需要的低方阻与达到这一条件所需要的提高硼掺杂浓度（提高浓度带来载流子迁移率的下降，复合速率增加）的技术改进方向是相互矛盾的。
如何解决这一矛盾对PERT技术的发展至关重要，我们认为从器件结构的设计上入手可能是一个有效的突破口。本发明即是在这个方向上的一个努力尝试。
发明内容
本发明的目的是提出一种进光区域无重掺杂层遮挡的同质结晶体硅双面太阳电池结构。
本发明是通过以下技术方案实现的。
本发明所述的一种进光区域无重掺杂层遮挡的同质结晶体硅双面太阳电池结构，以n型晶体硅片（4）作为基底，其发射极面分为发射极-导电区域和钝化-进光区域：发射极-导电区域由基底向外依次由重掺杂p型晶体硅发射极层（2）和金属栅线I（1）构成，钝化-进光区域由钝化减反射层I（3）构成。这两个区域交叉分布且不重叠。
本发明所述的一种进光区域无重掺杂层遮挡的同质结晶体硅双面太阳电池结构，为双面进光太阳电池，其正负电极分别位于n型晶体硅片（4）基底的两个表面，为双面进光太阳电池。太阳电池在发射极面之外的另外一面（背电场面）结构：分为钝化-进光区域和背电场-导电区域：钝化-进光区域由基底向外依次为重掺杂n型晶体硅层II（5）、钝化减反射层II（6）；背电场-导电区域由基底向外依次为重掺杂n型晶体硅层II（5）、金属栅线II（7）。这两个区域交叉分布且不重叠。
进一步地，为提高器件的性能，本发明所述的n型晶体硅片（4）可以双面制绒，以进一步提高太阳电池短路电流。
进一步地，n型晶体硅片（4）的双面的制绒情况可以不同，一面采用较小尺寸金字塔结构的绒面，另外一面采用较大尺寸的金字塔绒面或者无金字塔的抛光结构。
进一步地，有金属栅线（金属栅线I、金属栅线II）区域可以抛光或做更大尺寸金字塔的绒面，以减少复合损耗，提高太阳电池的开路电压。
进一步地，器件表面金属栅线（金属栅线I、金属栅线II）总覆盖面积比例优选为1~3%，以提高太阳电池的短路电流并保证足够好的导电性。
进一步的，所述的钝化减反射层I（3）、钝化减反射层II（6）优选热氧化法制备的二氧化硅结合氮化硅的复合膜层结构。
发明的技术效果是：本发明适用于单晶硅片太阳电池、多晶硅片太阳电池和准单晶硅片太阳电池。在保持晶体硅太阳电池双面进光特性的前提下，获得了更高开路电压和短路电流，最大程度的提高晶体硅太阳电池的发电能力。其机理是通过金属栅线覆盖面积下的p型重掺杂晶体硅发射极及配套结构获得高的开路电压，因为本结构可只考虑发射极的电学性能而不用如PERT结构中发射极层般还要平衡吸光损耗的程度；在没有金属栅线的地方采用表面减反射钝化层的结构相比于PERT全表面重掺杂p型层结合钝化层的结构可减少载流子在p型层中传输过程中的严重复合损耗导致的短路电流和开路电压下降。在发射极面，产生的光生空穴集中流向发射极区域，形成了类似聚光太阳电池的大电流效应，可进一步提高太阳电池的内建电势，从而进一步提高太阳电池的电压；而产生的电子因为发射极面的重掺杂n型区域没有电极，只能流向硅片另外一面的金属电极被收集起来。
附图说明
附图1为本发明结构示意图。其中：1为金属栅线I；2为重掺杂p型晶体硅发射极层；3为钝化减反射层I；4为n型晶体硅片；5为重掺杂n型晶体硅层；6为钝化减反射层II；7为金属栅线II。
具体实施方式
本发明将通过以下实施例作进一步说明。
实施例1。
如附图1所示的一种进光区域无重掺杂层遮挡的同质结晶体硅双面太阳电池结构。n型晶体硅片4的双面均采用平均~2微米的金字塔结构绒面，钝化减反射层I 3和钝化减反射层II 6均采用氮化硅薄膜，金属栅线I 1和金属栅线II 7均采用主副栅配合的Ag栅线结构，遮盖面积为硅片表面积的3%。该结构双面进光特性均非常优异，即任何一面均可作为主进光面。如作为单面进光太阳电池使用，则可在背光面镀一层金属作为反光层，增加作为单面进光太阳电池的短路电流。优选以发射极面作为主迎光面。
该结构的两个表面的进光特性均十分优异，均可作为主进光面。如作为单面进光太阳电池使用，则可在背光面镀一层金属作为反光层，增加作为单面进光太阳电池的短路电流。
实施例2。
如附图1所示的一种进光区域无重掺杂层遮挡的同质结晶体硅双面太阳电池结构。n型晶体硅片4的双面的钝化-进光区域均采用平均~1微米的金字塔结构绒面，发射极-导电区域和背电场-导电区域采用化学抛光结构。钝化减反射层I 3采用二氧化硅/氮化硅复合薄膜，钝化减反射层II 6采用氮化硅薄膜。金属栅线I 1和金属栅线II 7均采用主副栅配合的Ni/Cu/Ag复合栅线结构，遮盖面积为硅片表面积的1%。该结构双面进光特性均非常优异，即任何一面均可作为主进光面。如作为单面进光太阳电池使用，则可在背光面镀一层金属作为反光层，增加作为单面进光太阳电池的短路电流。优选以发射极面作为主迎光面。
该结构的两个表面的进光特性均十分优异，均可作为主进光面。如作为单面进光太阳电池使用，则可在背光面镀一层金属作为反光层，增加作为单面进光太阳电池的短路电流。
Claims (7)
1.一种进光区域无重掺杂层遮挡的同质结晶体硅双面太阳电池结构，其特征是以n型晶体硅片（4）作为基底，其发射极面分为发射极-导电区域和钝化-进光区域：发射极-导电区域由基底向外依次由重掺杂p型晶体硅发射极层（2）和金属栅线I（1）构成，钝化-进光区域由钝化减反射层I（3）构成，这两个区域交叉分布且不重叠；
其背电场面分为钝化-进光区域和背电场-导电区域：钝化-进光区域由基底向外依次为重掺杂n型晶体硅层II（5）、钝化减反射层II（6）；背电场-导电区域由基底向外依次为重掺杂n型晶体硅层II（5）、金属栅线II（7），这两个区域交叉分布且不重叠。
2.根据权利要求1所述的一种进光区域无重掺杂层遮挡的同质结晶体硅双面太阳电池结构，其特征是所述的n型晶体硅片（4）为双面制绒。
3.根据权利要求1所述的一种进光区域无重掺杂层遮挡的同质结晶体硅双面太阳电池结构，其特征是n型晶体硅片（4）的双面的制绒情况：一面采用小尺寸金字塔结构的绒面，另外一面采用大尺寸的金字塔绒面或者无金字塔的抛光结构。
4.根据权利要求1所述的一种进光区域无重掺杂层遮挡的同质结晶体硅双面太阳电池结构，其特征是有金属栅线区域抛光或做大尺寸金字塔的绒面。
5.根据权利要求1所述的一种进光区域无重掺杂层遮挡的同质结晶体硅双面太阳电池结构，其特征是器件表面金属栅线总覆盖面积比例为1~3%。
6.根据权利要求1所述的一种进光区域无重掺杂层遮挡的同质结晶体硅双面太阳电池结构，其特征是所述的钝化减反射层I（3）为热氧化法制备的二氧化硅结合氮化硅的复合膜层结构。
7.根据权利要求1所述的一种进光区域无重掺杂层遮挡的同质结晶体硅双面太阳电池结构，其特征是所述的钝化减反射层II（6）为热氧化法制备的二氧化硅结合氮化硅的复合膜层结构。
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| CN102169923A (zh) * | 2011-03-05 | 2011-08-31 | 常州天合光能有限公司 | 钝化n型硅太阳能电池的p型掺杂层的方法及电池结构 |
| CN104412394A (zh) * | 2012-06-29 | 2015-03-11 | 洛桑联邦理工学院 | 太阳能电池 |
| CN105322043A (zh) * | 2015-11-16 | 2016-02-10 | 南昌大学 | 一种可双面进光的晶硅太阳电池及其制备方法 |
| CN206907779U (zh) * | 2017-05-26 | 2018-01-19 | 泰州隆基乐叶光伏科技有限公司 | n型晶体硅双面太阳电池 |
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| CN102169923A (zh) * | 2011-03-05 | 2011-08-31 | 常州天合光能有限公司 | 钝化n型硅太阳能电池的p型掺杂层的方法及电池结构 |
| CN102169923B (zh) * | 2011-03-05 | 2013-03-27 | 常州天合光能有限公司 | 钝化n型硅太阳能电池的p型掺杂层的方法及电池结构 |
| CN104412394A (zh) * | 2012-06-29 | 2015-03-11 | 洛桑联邦理工学院 | 太阳能电池 |
| CN105322043A (zh) * | 2015-11-16 | 2016-02-10 | 南昌大学 | 一种可双面进光的晶硅太阳电池及其制备方法 |
| CN206907779U (zh) * | 2017-05-26 | 2018-01-19 | 泰州隆基乐叶光伏科技有限公司 | n型晶体硅双面太阳电池 |
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