CN108336159A - 一种异质结晶体硅双面太阳电池结构 - Google Patents
一种异质结晶体硅双面太阳电池结构 Download PDFInfo
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Abstract
一种异质结晶体硅双面太阳电池结构，以n型晶体硅片作为基底，发射极面分为发射极‑导电区域和钝化‑进光区域：发射极‑导电区域由基底向外依次由本征非晶硅钝化层、重掺杂p型非晶硅层、金属栅线I构成，钝化‑进光区域由钝化减反射层I构成；背电场面分为钝化‑进光区域和背电场‑导电区域：钝化‑进光区域由钝化减反射层II；背电场‑导电区域由基底向外依次为本征非晶硅钝化层II、重掺杂n型非晶硅、金属栅线II。本发明在保持晶体硅太阳电池双面进光的特性前提下，同时获得高开路电压和高短路电流的特性，最大程度的提高晶体硅太阳电池的发电能力。
Description
技术领域
本发明属于太阳电池领域和半导体器件领域。涉及太阳电池的制备技术。
背景技术
对于晶体硅异质结太阳电池，其通常结构为在n型制绒晶体硅衬底上，一面为本征非晶硅钝化层、p型非晶硅发射极层、TCO透明导电薄膜、银栅线，另外一面为本征非晶硅钝化层、n型非晶硅发射极层、TCO透明导电薄膜、银栅线的结构。该结构的太阳电池的优点是开路电压高，缺点是TCO层和本征及掺杂非晶硅层造成很大的光吸收损耗，尤其是非晶硅层，导致该类太阳电池的短路电流一直不高。如何通过器件结构设计和制备技术的提高来提高该类太阳电池的短路电流是其性能提升的一个重要方向。另外，该结构太阳电池所用TCO材料的一种主要元素是铟，其在地球上储量很少，价格很高，是导致该太阳电池的成本很高的主要因素之一，所以降低TCO的用量也是该结构太阳电池改进的一个重要方向。
发明内容
本发明的目的是提出一种异质结晶体硅双面太阳电池结构，通过提高晶体硅异质结太阳电池的短路电流，进一步提高晶体硅双面太阳电池的发电效率；减少贵重原材料的消耗。
本发明是通过以下技术方案实现的。
本发明所述的一种异质结晶体硅双面太阳电池结构，以n型晶体硅片（5）作为基底，其发射极面分为发射极-导电区域和钝化-进光区域：发射极-导电区域由基底向外依次由本征非晶硅钝化层（3）、重掺杂p型非晶硅层（2）、金属栅线I（1）构成，钝化-进光区域由钝化减反射层I（4）构成，这两个区域交叉分布且不重叠。
为提高金属栅线I（1）与重掺杂p型非晶硅层（2）之间的接触导电性，优选在二者之间插入一过渡TCO层。
本发明所述的钝化减反射层I（4）优选二氧化硅/氮化硅复合薄膜。
本发明所述的一种异质结晶体硅双面太阳电池结构结构，为双面进光太阳电池，其正负电极分别位于n型晶体硅片（5）基底的两个表面。太阳电池在发射极面之外的另外一面（背电场面）的结构分为钝化-进光区域和背电场-导电区域：钝化-进光区域由钝化减反射层II（6）；背电场-导电区域由基底向外依次为本征非晶硅钝化层II（7）、重掺杂n型非晶硅（8）、金属栅线II（9）。这两个区域交叉分布且不重叠。
其中，所述的钝化减反射层II（6）优选二氧化硅/氮化硅复合薄膜。
进一步地，为提高器件的性能，本发明所述的n型晶体硅片（5）可以双面制绒，以进一步提高太阳电池短路电流。
进一步地，n型晶体硅片（5）的双面的制绒情况可以不同，一面采用较小尺寸金字塔结构的绒面，另外一面采用较大尺寸的金字塔绒面或者无金字塔的抛光结构。
进一步地，有金属栅线（金属栅线I、金属栅线II）区域可以抛光或做更大尺寸金字塔的绒面，以减少复合损耗，提高太阳电池的开路电压。
进一步地，器件表面金属栅线（金属栅线I、金属栅线II）总覆盖面积比例优选为1~3%，以提高太阳电池的短路电流并保证足够好的导电性。
发明的技术效果是：在保持晶体硅太阳电池双面进光的特性前提下，同时获得高开路电压和高短路电流的特性，最大程度的提高晶体硅太阳电池的发电能力。其机理是通过金属栅线覆盖面积下的非晶硅发射极及配套结构获得高的开路电压；在没有金属栅线的地方采用表面减反射钝化层的结构相比于常规非晶硅/晶体硅异质结太阳电池可减少遮光损失，将更多入射的太阳光有效转变为光生载流子。器件中产生的光生空穴集中流向发射极区域，形成了类似聚光太阳电池的大电流效应，可进一步提高太阳电池的内建电势，从而进一步提高太阳电池的电压。另外，本发明相比于HIT结构可以完全避免贵重的TCO的使用。
附图说明
附图1为本发明的结构示意图。其中：1为金属栅线I；2为重掺杂p型非晶硅层；3为本征非晶硅层；4为钝化减反射层I；5为n型晶体硅片；6为钝化减反射层I；7为本征非晶硅钝化层II；8为重掺杂n型非晶硅层；9为金属栅线II。
具体实施方式
本发明将通过以下实施例作进一步说明。
实施例1。
如附图1所示的一种异质结晶体硅双面太阳电池结构结构。n型晶体硅片5的表面在有钝化减反射层I 4和钝化减反射层II 6的区域均采用平均尺寸为3微米的金字塔绒面结构，在有本征非晶硅钝化层I 3和本征非晶硅钝化层II 7的区域均采用化学抛光表面结构（无制绒）。钝化减反射层II 6为氧化铝+氮化硅复合薄膜。金属栅线I 1和金属栅线II 9从硅片表面开始依此为镍/铜/银的复合金属电极，占据硅片表面积的3%。
该结构的两个表面的进光特性均十分优异，均可作为主进光面。如作为单面进光太阳电池使用，则可在背光面镀一层金属作为反光层，增加作为单面进光太阳电池的短路电流。
实施例2。
如附图1所示的一种异质结晶体硅双面太阳电池结构结构。n型晶体硅片5的表面全部采用平均尺寸为1μm的金字塔结构。钝化减反射层I 4和钝化减反射层II 6均为二氧化硅+氮化硅复合薄膜。金属栅线I 1和金属栅线II 9全部为纯Ag结构，占据硅片表面积的1%。
该结构的两个表面的进光特性均十分优异，均可作为主进光面。如作为单面进光太阳电池使用，则可在背光面镀一层金属作为反光层，增加作为单面进光太阳电池的短路电流。
Claims (8)
1.一种异质结晶体硅双面太阳电池结构，其特征是以n型晶体硅片（5）作为基底，其发射极面分为发射极-导电区域和钝化-进光区域：发射极-导电区域由基底向外依次由本征非晶硅钝化层（3）、重掺杂p型非晶硅层（2）、金属栅线I（1）构成，钝化-进光区域由钝化减反射层I（4）构成，这两个区域交叉分布且不重叠；
其背电场面分为钝化-进光区域和背电场-导电区域：钝化-进光区域由钝化减反射层II（6）；背电场-导电区域由基底向外依次为本征非晶硅钝化层II（7）、重掺杂n型非晶硅（8）、金属栅线II（9），这两个区域交叉分布且不重叠。
2.根据权利要求1所述的一种异质结晶体硅双面太阳电池结构，其特征是在金属栅线I（1）与重掺杂p型非晶硅层（2）之间插入一过渡TCO层。
3.根据权利要求1所述的一种异质结晶体硅双面太阳电池结构，其特征是所述的钝化减反射层I（4）为二氧化硅/氮化硅复合薄膜。
4.根据权利要求1所述的一种异质结晶体硅双面太阳电池结构，其特征是所述的钝化减反射层II（6）为二氧化硅/氮化硅复合薄膜。
5.根据权利要求1所述的一种异质结晶体硅双面太阳电池结构，其特征是所述的n型晶体硅片（5）为双面制绒。
6.根据权利要求1所述的一种异质结晶体硅双面太阳电池结构，其特征是n型晶体硅片（5）的双面的制绒情况：一面采用小尺寸金字塔结构的绒面，另外一面采用大尺寸的金字塔绒面或者无金字塔的抛光结构。
7.根据权利要求1所述的一种异质结晶体硅双面太阳电池结构，其特征是有金属栅线区域抛光或做大尺寸金字塔的绒面。
8.根据权利要求1所述的一种异质结晶体硅双面太阳电池结构，其特征是器件表面金属栅线总覆盖面积比例优选为1~3%。
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