IN2014CN04267A - - Google Patents
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- Publication number
- IN2014CN04267A IN2014CN04267A IN4267CHN2014A IN2014CN04267A IN 2014CN04267 A IN2014CN04267 A IN 2014CN04267A IN 4267CHN2014 A IN4267CHN2014 A IN 4267CHN2014A IN 2014CN04267 A IN2014CN04267 A IN 2014CN04267A
- Authority
- IN
- India
- Prior art keywords
- inorganic
- compound
- coating liquid
- coating
- thin film
- Prior art date
Links
- 239000011248 coating agent Substances 0.000 abstract 3
- 238000000576 coating method Methods 0.000 abstract 3
- 239000007788 liquid Substances 0.000 abstract 2
- 229940043430 calcium compound Drugs 0.000 abstract 1
- 150000001674 calcium compounds Chemical class 0.000 abstract 1
- 230000005669 field effect Effects 0.000 abstract 1
- 150000002472 indium compounds Chemical class 0.000 abstract 1
- 229910044991 metal oxide Inorganic materials 0.000 abstract 1
- 150000004706 metal oxides Chemical class 0.000 abstract 1
- 239000003960 organic solvent Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 150000003438 strontium compounds Chemical class 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02554—Oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/22—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIBVI compounds
- H01L29/221—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIBVI compounds including two or more compounds, e.g. alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Thin Film Transistor (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011261991A JP5929132B2 (ja) | 2011-11-30 | 2011-11-30 | 金属酸化物薄膜形成用塗布液、金属酸化物薄膜の製造方法、及び電界効果型トランジスタの製造方法 |
| PCT/JP2012/081426 WO2013081167A1 (en) | 2011-11-30 | 2012-11-28 | Coating liquid for forming metal oxide thin film, metal oxide thin film, field-effect transistor, and method for manufacturing field-effect transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IN2014CN04267A true IN2014CN04267A (zh) | 2015-07-31 |
Family
ID=48535613
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IN4267CHN2014 IN2014CN04267A (zh) | 2011-11-30 | 2012-11-28 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US9418842B2 (zh) |
| EP (1) | EP2786405B1 (zh) |
| JP (1) | JP5929132B2 (zh) |
| KR (1) | KR101697412B1 (zh) |
| CN (2) | CN107403716A (zh) |
| IN (1) | IN2014CN04267A (zh) |
| TW (1) | TWI559540B (zh) |
| WO (1) | WO2013081167A1 (zh) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6454974B2 (ja) | 2013-03-29 | 2019-01-23 | 株式会社リコー | 金属酸化物膜形成用塗布液、金属酸化物膜の製造方法、及び電界効果型トランジスタの製造方法 |
| CN108565207A (zh) * | 2013-08-07 | 2018-09-21 | 株式会社尼康 | 金属氧化物膜的制造方法和晶体管的制造方法 |
| JP6180908B2 (ja) * | 2013-12-06 | 2017-08-16 | 富士フイルム株式会社 | 金属酸化物半導体膜、薄膜トランジスタ、表示装置、イメージセンサ及びｘ線センサ |
| JP6672611B2 (ja) | 2014-07-03 | 2020-03-25 | 株式会社リコー | エレクトロクロミック化合物、エレクトロクロミック組成物及び表示素子及び調光素子 |
| TWI560781B (en) * | 2014-09-10 | 2016-12-01 | Au Optronics Corp | Method for fabricating thin film transistor and apparatus thereof |
| GB201418610D0 (en) * | 2014-10-20 | 2014-12-03 | Cambridge Entpr Ltd | Transistor devices |
| CN104934444B (zh) * | 2015-05-11 | 2018-01-02 | 深圳市华星光电技术有限公司 | 共平面型氧化物半导体tft基板结构及其制作方法 |
| EP3125296B1 (en) | 2015-07-30 | 2020-06-10 | Ricoh Company, Ltd. | Field-effect transistor, display element, image display device, and system |
| JP6828293B2 (ja) | 2015-09-15 | 2021-02-10 | 株式会社リコー | ｎ型酸化物半導体膜形成用塗布液、ｎ型酸化物半導体膜の製造方法、及び電界効果型トランジスタの製造方法 |
| US10269293B2 (en) * | 2015-10-23 | 2019-04-23 | Ricoh Company, Ltd. | Field-effect transistor (FET) having gate oxide insulating layer including SI and alkaline earth elements, and display element, image display and system including FET |
| US10600916B2 (en) | 2015-12-08 | 2020-03-24 | Ricoh Company, Ltd. | Field-effect transistor, display element, image display device, and system |
| JP6607013B2 (ja) | 2015-12-08 | 2019-11-20 | 株式会社リコー | 電界効果型トランジスタ、表示素子、画像表示装置、及びシステム |
| US10170635B2 (en) | 2015-12-09 | 2019-01-01 | Ricoh Company, Ltd. | Semiconductor device, display device, display apparatus, and system |
| JP6907512B2 (ja) * | 2015-12-15 | 2021-07-21 | 株式会社リコー | 電界効果型トランジスタの製造方法 |
| JP6701835B2 (ja) | 2016-03-11 | 2020-05-27 | 株式会社リコー | 電界効果型トランジスタ、表示素子、画像表示装置、及びシステム |
| JP6848405B2 (ja) * | 2016-12-07 | 2021-03-24 | 株式会社リコー | 電界効果型トランジスタの製造方法 |
| CN107546262A (zh) * | 2017-07-17 | 2018-01-05 | 华南理工大学 | 一种基于锶铟氧化物的薄膜晶体管及其制备方法 |
| EP3544047A3 (en) | 2018-03-19 | 2019-11-20 | Ricoh Company, Ltd. | Coating liquid for forming oxide, method for producing oxide film, and method for producing field-effect transistor |
| CN111370495B (zh) * | 2018-12-26 | 2022-05-03 | Tcl科技集团股份有限公司 | 薄膜晶体管有源层墨水及一种薄膜晶体管的制备方法 |
| JP7326795B2 (ja) | 2019-03-20 | 2023-08-16 | 株式会社リコー | 電界効果型トランジスタ、表示素子、画像表示装置、及びシステム |
| CN113314614A (zh) * | 2021-05-28 | 2021-08-27 | 电子科技大学 | 基于纳米压印法的氧化物薄膜晶体管器件及其制备方法 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0696619A (ja) | 1992-09-14 | 1994-04-08 | Matsushita Electric Ind Co Ltd | 透明導電膜形成用組成物とその形成方法 |
| JPH07320541A (ja) | 1994-05-19 | 1995-12-08 | Matsushita Electric Ind Co Ltd | 透明導電膜形成用組成物および透明導電膜の製造方法 |
| JP2001234343A (ja) | 2000-02-17 | 2001-08-31 | Asahi Denka Kogyo Kk | 金属化合物溶液及びこれを用いた薄膜の製造方法 |
| US7442408B2 (en) * | 2002-03-26 | 2008-10-28 | Hewlett-Packard Development Company, L.P. | Methods for ink-jet printing circuitry |
| US7062848B2 (en) * | 2003-09-18 | 2006-06-20 | Hewlett-Packard Development Company, L.P. | Printable compositions having anisometric nanostructures for use in printed electronics |
| JP4969141B2 (ja) | 2005-04-27 | 2012-07-04 | 株式会社半導体エネルギー研究所 | 記憶素子、半導体装置、及び記憶素子の作製方法 |
| KR101258157B1 (ko) | 2005-04-27 | 2013-04-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제조 방법 |
| EP1950177A4 (en) * | 2005-11-18 | 2009-02-25 | Idemitsu Kosan Co | SEMICONDUCTOR THIN FILM, MANUFACTURING METHOD AND THIN FILM TRANSISTOR |
| KR101206661B1 (ko) * | 2006-06-02 | 2012-11-30 | 삼성전자주식회사 | 동일 계열의 소재로 형성된 반도체층 및 소스/드레인전극을 포함하는 유기 전자 소자 |
| KR101390022B1 (ko) * | 2007-02-16 | 2014-04-29 | 삼성전자주식회사 | 질소를 포함하는 헤테로아로마틱계 리간드/전이금속착화합물, 이를 포함하는 버퍼층 및 상기 버퍼층을포함하는 유기박막 트랜지스터 |
| JP2009120873A (ja) | 2007-11-12 | 2009-06-04 | Dainippon Printing Co Ltd | 金属酸化物膜の製造方法 |
| WO2009081862A1 (ja) * | 2007-12-26 | 2009-07-02 | Konica Minolta Holdings, Inc. | 金属酸化物半導体およびその製造方法、半導体素子、薄膜トランジスタ |
| JP2009177149A (ja) | 2007-12-26 | 2009-08-06 | Konica Minolta Holdings Inc | 金属酸化物半導体とその製造方法および薄膜トランジスタ |
| US20100072435A1 (en) * | 2008-09-20 | 2010-03-25 | Konica Minolta Holdings, Inc. | Production method of metal oxide precursor layer, production method of metal oxide layer, and electronic device |
| JP5277832B2 (ja) | 2008-09-24 | 2013-08-28 | 大日本印刷株式会社 | 積層体の製造方法 |
| US20100163861A1 (en) * | 2008-12-29 | 2010-07-01 | Motorola, Inc. | Method and apparatus for optically transparent transistor |
| JP2010258057A (ja) * | 2009-04-22 | 2010-11-11 | Konica Minolta Holdings Inc | 金属酸化物半導体、その製造方法、及びそれを用いた薄膜トランジスタ |
| KR20110056127A (ko) * | 2009-11-20 | 2011-05-26 | 삼성전자주식회사 | 트랜지스터용 반도체 제조 방법 및 트랜지스터의 제조 방법 |
| JP6064314B2 (ja) | 2010-11-29 | 2017-01-25 | 株式会社リコー | 金属酸化物薄膜形成用塗布液、金属酸化物薄膜の製造方法、及び電界効果型トランジスタの製造方法 |
-
2011
- 2011-11-30 JP JP2011261991A patent/JP5929132B2/ja active Active
-
2012
- 2012-11-28 CN CN201710363619.2A patent/CN107403716A/zh active Pending
- 2012-11-28 IN IN4267CHN2014 patent/IN2014CN04267A/en unknown
- 2012-11-28 WO PCT/JP2012/081426 patent/WO2013081167A1/en active Application Filing
- 2012-11-28 KR KR1020147017669A patent/KR101697412B1/ko active IP Right Grant
- 2012-11-28 US US14/361,150 patent/US9418842B2/en active Active
- 2012-11-28 EP EP12852690.2A patent/EP2786405B1/en active Active
- 2012-11-28 CN CN201280068540.2A patent/CN104081510A/zh active Pending
- 2012-11-29 TW TW101144794A patent/TWI559540B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2013115328A (ja) | 2013-06-10 |
| EP2786405B1 (en) | 2017-03-29 |
| TW201327831A (zh) | 2013-07-01 |
| CN107403716A (zh) | 2017-11-28 |
| KR20140097475A (ko) | 2014-08-06 |
| US20140299877A1 (en) | 2014-10-09 |
| KR101697412B1 (ko) | 2017-01-17 |
| EP2786405A1 (en) | 2014-10-08 |
| US9418842B2 (en) | 2016-08-16 |
| EP2786405A4 (en) | 2015-04-08 |
| TWI559540B (zh) | 2016-11-21 |
| CN104081510A (zh) | 2014-10-01 |
| JP5929132B2 (ja) | 2016-06-01 |
| WO2013081167A1 (en) | 2013-06-06 |
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