IN2012DN03051A - - Google Patents
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- Publication number
- IN2012DN03051A IN2012DN03051A IN3051DEN2012A IN2012DN03051A IN 2012DN03051 A IN2012DN03051 A IN 2012DN03051A IN 3051DEN2012 A IN3051DEN2012 A IN 3051DEN2012A IN 2012DN03051 A IN2012DN03051 A IN 2012DN03051A
- Authority
- IN
- India
- Prior art keywords
- devices
- growth substrate
- methods
- flexible
- reuse
- Prior art date
Links
- 238000000034 method Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 1
- 239000011241 protective layer Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/139—Manufacture or treatment of devices covered by this subclass using temporary substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/7806—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate
- H01L21/7813—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate leaving a reusable substrate, e.g. epitaxial lift off
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
- H10F10/163—Photovoltaic cells having only PN heterojunction potential barriers comprising only Group III-V materials, e.g. GaAs/AlGaAs or InP/GaInAs photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
- H10F71/1276—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising growth substrates not made of Group III-V materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/139—Manufacture or treatment of devices covered by this subclass using temporary substrates
- H10F71/1395—Manufacture or treatment of devices covered by this subclass using temporary substrates for thin-film devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
- H10F77/169—Thin semiconductor films on metallic or insulating substrates
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
- Weting (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
Abstract
There is disclosed methods of making photosensitive devices, such as flexible photovoltaic (PV) devices, through the use of epitaxial liftoff. Also described herein are methods of preparing flexible PV devices comprising a structure having a growth substrate, wherein the selective etching of protective layers yields a smooth growth substrate that us suitable for reuse.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US24137309P | 2009-09-10 | 2009-09-10 | |
US24137409P | 2009-09-10 | 2009-09-10 | |
US35829810P | 2010-06-24 | 2010-06-24 | |
PCT/US2010/048213 WO2011066029A2 (en) | 2009-09-10 | 2010-09-09 | Methods of preparing flexible photovoltaic devices using epitaxial liftoff, and preserving the integrity of growth substrates used in epitaxial growth |
Publications (1)
Publication Number | Publication Date |
---|---|
IN2012DN03051A true IN2012DN03051A (en) | 2015-07-31 |
Family
ID=44067165
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IN3051DEN2012 IN2012DN03051A (en) | 2009-09-10 | 2010-09-09 |
Country Status (10)
Country | Link |
---|---|
US (2) | US8378385B2 (en) |
EP (1) | EP2462631B1 (en) |
JP (1) | JP5619901B2 (en) |
KR (1) | KR101714812B1 (en) |
CN (1) | CN102804408B (en) |
AU (1) | AU2010325106B2 (en) |
CA (1) | CA2789391A1 (en) |
IN (1) | IN2012DN03051A (en) |
TW (1) | TWI550895B (en) |
WO (1) | WO2011066029A2 (en) |
Families Citing this family (58)
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US9040392B2 (en) | 2011-06-15 | 2015-05-26 | International Business Machines Corporation | Method for controlled removal of a semiconductor device layer from a base substrate |
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US8916954B2 (en) * | 2012-02-05 | 2014-12-23 | Gtat Corporation | Multi-layer metal support |
US8841161B2 (en) * | 2012-02-05 | 2014-09-23 | GTAT.Corporation | Method for forming flexible solar cells |
EP2812927A2 (en) | 2012-02-07 | 2014-12-17 | The Regents Of The University Of Michigan | Thermal surface treatment for reuse of wafers after epitaxial lift off |
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US8785294B2 (en) | 2012-07-26 | 2014-07-22 | Gtat Corporation | Silicon carbide lamina |
US20140137930A1 (en) * | 2012-11-16 | 2014-05-22 | Solar Junction Corporation | Multijunction solar cells |
BR112015023736A2 (en) * | 2013-03-15 | 2017-07-18 | First Solar Inc | method to manufacture photovoltaic device |
CN103346079A (en) * | 2013-06-07 | 2013-10-09 | 刘凤全 | Reusable semiconductor substrate and purification reutilization method thereof |
US10658998B2 (en) | 2013-07-31 | 2020-05-19 | Oepic Semiconductors, Inc. | Piezoelectric film transfer for acoustic resonators and filters |
TW201517158A (en) | 2013-08-26 | 2015-05-01 | Univ Michigan | Film separation by combination of epitaxial lift and peel |
CN103489958B (en) * | 2013-08-27 | 2015-09-02 | 湖南红太阳光电科技有限公司 | The preparation method of the silica-based gallium arsenide cells of a kind of flexibility |
AU2014381597A1 (en) | 2013-11-11 | 2016-05-26 | The Regents Of The University Of Michigan | Thermally-assisted cold-weld bonding for epitaxial lift-off process |
US10637391B2 (en) | 2013-11-29 | 2020-04-28 | The Regents Of The University Of Michigan | Autonomous solar tracking in flat-plate photovoltaic panels using kirigami-inspired microstructures |
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US10069033B2 (en) | 2014-01-15 | 2018-09-04 | The Regents Of The University Of Michigan | Integration of epitaxial lift-off solar cells with mini-parabolic concentrator arrays via printing method |
US10141465B2 (en) * | 2014-04-04 | 2018-11-27 | The Regents Of The University Of Michigan | Epitaxial lift-off processed GaAs thin-film solar cells integrated with non-tracking mini-compound parabolic concentrators |
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US20170033247A1 (en) | 2014-04-29 | 2017-02-02 | The Regents Of The University Of Michigan | Flexible antenna integrated with an array of solar cells |
US9786643B2 (en) * | 2014-07-08 | 2017-10-10 | Micron Technology, Inc. | Semiconductor devices comprising protected side surfaces and related methods |
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-
2010
- 2010-09-09 IN IN3051DEN2012 patent/IN2012DN03051A/en unknown
- 2010-09-09 JP JP2012528887A patent/JP5619901B2/en active Active
- 2010-09-09 CN CN201080049905.8A patent/CN102804408B/en not_active Expired - Fee Related
- 2010-09-09 EP EP10818111.6A patent/EP2462631B1/en active Active
- 2010-09-09 KR KR1020127009157A patent/KR101714812B1/en active Active
- 2010-09-09 US US12/878,261 patent/US8378385B2/en active Active
- 2010-09-09 WO PCT/US2010/048213 patent/WO2011066029A2/en active Application Filing
- 2010-09-09 CA CA2789391A patent/CA2789391A1/en not_active Abandoned
- 2010-09-09 AU AU2010325106A patent/AU2010325106B2/en not_active Ceased
- 2010-09-10 TW TW099130822A patent/TWI550895B/en active
-
2013
- 2013-01-25 US US13/750,660 patent/US8927319B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
TW201125152A (en) | 2011-07-16 |
US20130237001A1 (en) | 2013-09-12 |
JP2013504878A (en) | 2013-02-07 |
CA2789391A1 (en) | 2011-06-03 |
KR20120103762A (en) | 2012-09-19 |
JP5619901B2 (en) | 2014-11-05 |
US20110186910A1 (en) | 2011-08-04 |
EP2462631B1 (en) | 2021-06-30 |
US8378385B2 (en) | 2013-02-19 |
US8927319B2 (en) | 2015-01-06 |
WO2011066029A2 (en) | 2011-06-03 |
KR101714812B1 (en) | 2017-03-22 |
TWI550895B (en) | 2016-09-21 |
EP2462631A2 (en) | 2012-06-13 |
WO2011066029A3 (en) | 2012-05-31 |
CN102804408A (en) | 2012-11-28 |
CN102804408B (en) | 2016-01-20 |
AU2010325106B2 (en) | 2015-04-09 |
AU2010325106A1 (en) | 2012-04-12 |
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