CN105140318B - solar cell epitaxial wafer and manufacturing method thereof - Google Patents
solar cell epitaxial wafer and manufacturing method thereof Download PDFInfo
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- CN105140318B CN105140318B CN201510375149.2A CN201510375149A CN105140318B CN 105140318 B CN105140318 B CN 105140318B CN 201510375149 A CN201510375149 A CN 201510375149A CN 105140318 B CN105140318 B CN 105140318B
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- 238000004519 manufacturing process Methods 0.000 title abstract description 5
- 239000000758 substrate Substances 0.000 claims abstract description 48
- 230000007797 corrosion Effects 0.000 claims abstract description 35
- 238000005260 corrosion Methods 0.000 claims abstract description 35
- 238000000034 method Methods 0.000 claims abstract description 24
- 239000000463 material Substances 0.000 claims description 34
- 238000005516 engineering process Methods 0.000 claims description 21
- 238000009966 trimming Methods 0.000 claims description 14
- 238000002360 preparation method Methods 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 6
- 238000000927 vapour-phase epitaxy Methods 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 238000001259 photo etching Methods 0.000 claims description 4
- 230000003111 delayed effect Effects 0.000 claims 1
- 150000002894 organic compounds Chemical class 0.000 claims 1
- 239000007788 liquid Substances 0.000 abstract description 11
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 28
- 239000007789 gas Substances 0.000 description 11
- 239000002253 acid Substances 0.000 description 10
- 230000001788 irregular Effects 0.000 description 6
- 239000000047 product Substances 0.000 description 5
- 239000013589 supplement Substances 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 4
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 3
- 230000002687 intercalation Effects 0.000 description 3
- 238000009830 intercalation Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 241000209094 Oryza Species 0.000 description 2
- 235000007164 Oryza sativa Nutrition 0.000 description 2
- 206010040844 Skin exfoliation Diseases 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 239000002905 metal composite material Substances 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 235000009566 rice Nutrition 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention relates to a solar cell epitaxial wafer and a manufacturing method thereof. The solar cell epitaxial wafer comprises a substrate, a buffer layer, a sacrificial layer and a solar cell layer which are sequentially arranged, wherein the sacrificial layer comprises a first sacrificial layer and a second sacrificial layer, the first sacrificial layer is arranged close to the buffer layer, the second sacrificial layer is arranged close to the first sacrificial layer, the corrosion rate of the first sacrificial layer is greater than the corrosion rate of the second sacrificial layer, a plurality of mutually parallel bar-shaped grooves are distributed on the first sacrificial layer, and the second sacrificial layer is provided with a plurality of bar-shaped bulges which are tightly matched with the bar-shaped grooves. A technical problem that the sacrificial layer is corroded by a corrosive liquid with an unpredictable direction and different speeds is solved. The time of a stripping process can be reduced, and damages of the substrates and the solar cell layer in the stripping process can also be reduced, thereby improving the quality of a solar cell product and the yield of a production line.
Description
Technical field
The present invention relates to technical field of solar batteries.Specifically, it is related to a kind of solar battery epitaxial wafer and its system
Make method.
Background technology
GaAs solar battery technologies quickly grow, and application field progressively expands to Ground Application from space application, just
Take the formula energy and consumer electronics field wide market.GaAs solar-electricities are made using extension lift-off technology (ELO technologies)
Pond, on the one hand will can reuse after GaAs substrate desquamations, significantly reduce product cost；On the other hand, flexibility can be made
GaAs solar cells, increase before not only efficiency is than peeling off, and product quality is lighter and has flexibility, is more beneficial for aviation
Space flight and portable use etc., it is widely used.
The process for making GaAs solar cells using extension lift-off technology in the prior art is generally：First, using outer
Epitaxial growth fabrication techniques go out the solar battery epitaxial wafer with GaAs substrates, AlGaAs sacrifice layers and GaAs battery layers；Then,
Metal electrode is set in GaAs battery layers upper surface, and the side of metal electrode will be provided with and paste (such as with double faced adhesive tape, photoetching
Glue, cured etc.) arrive in transfer substrate (such as very thin copper sheet, plastic sheeting)；Finally, by the acid of its whole immersion selective corrosion
Property solution in, due to acid solution to the selective corrosion of AlGaAs sacrifice layers (acid solution, such as hydrofluoric acid to AlGaAs and
The corrosion of GaAs is selected than very big), finally cause that GaAs substrates and GaAs battery layers are separated.Substrate be stripped after by treatment
Can reuse, and metal gates and antireflective film etc. are further made on the GaAs battery structures for stripping down, you can shape
Into GaAs solar cells.
When above-mentioned utilization extension lift-off technology makes solar cell, sacrifice layer is the one layer of company for making on gaas substrates
The Al continuous, in uniform thickness and x is determination valuexGa1-xAs layers.Therefore, it is preferable in existing extension lift-off technology technique
In the case of, corrosion of the acid solution to sacrifice layer is gradually to erode to center from periphery.Under actual conditions, due to epitaxial growth
(deposition) technique, each side factor such as colloid used when metal electrode manufacture craft, stickup transfer substrate, can be in solar-electricity
Pond epitaxial wafer produces uneven stress everywhere.In stripping process, under the influence of stress, acid solution is to sacrifice layer
Corrosion shows corrosion rate situation different everywhere.Such case can cause：1st, acid solution is internally rotten in subregion
Erosion is very fast (acid solution is deeply internal along the irregular passage), and some areas corrosion is slower.Corrosion is regional faster
The gas of generation is easily accumulated between substrate and GaAs battery layers and is difficult discharge, hinders acid solution and enters one to sacrifice layer
Step corrosion hinders supplement of the acid solution to etch chemistries reaction front in other words；2nd, the gas for producing can not be discharged in time,
It is also easy to cause contained oxygen in gas to be reacted with GaAs battery layers or substrate, (oxygen and GaAs are anti-to cause battery layers to damage
GaAs should be caused to be easier to be corroded by acid solution) or the substrate defects that are not easily repaired it is (secondary to substrate using there is shadow
Ring)；3rd, gas build, internally produces certain pressure, and serious situation can damage GaAs battery layers or substrate.
The content of the invention
Therefore, the technical problems to be solved by the invention are to make solar energy using extension lift-off technology in the prior art
During battery, its sacrifice layer corrosion rate everywhere is inconsistent and uncontrollable, is easily caused the damage of battery layers and substrate, so as to carry
Go out that a kind of corrosion rate of sacrifice layer is very fast in one direction and the slower solar battery epitaxial wafer of its vertical direction and its system
Make method.
In order to solve the above technical problems, the invention provides following technical scheme：
A kind of solar battery epitaxial wafer, including substrate, cushion, sacrifice layer and the solar cell layer for setting gradually,
Sacrifice layer at least includes the first sacrifice layer and the second sacrifice layer, and the first sacrifice layer is close to cushion setting, and the second sacrifice layer is close to
First sacrifice layer is set, the be corroded speed of the speed more than the second sacrifice layer that is corroded of the first sacrifice layer；
Multiple strip grooves being parallel to each other are distributed with the first sacrifice layer, there is multiple and bar shaped on the second sacrifice layer
The close-fitting strip bulge of groove；And/or,
Multiple holes are distributed with the first sacrifice layer, hole position is located along the same line on a plurality of straight line being parallel to each other
The distance between two neighboring hole be less than 0.5 millimeter, have on the second sacrifice layer multiple with the close-fitting projection in hole.
Preferably, the material of the first sacrifice layer is AlxGa1-xAs, the material of the second sacrifice layer is AlyGa1-yAs, and x>y.
Preferably, the Al of the first sacrifice layerxGa1-xX is 0.7~1, the Al of the second sacrifice layer in As materialsyGa1-yAs materials
Middle y is 0.6~0.7.
Preferably：
The offside of substrate has two trimmings being parallel to each other；
Two trimmings of the strip groove perpendicular to substrate；
Two trimmings of straight line where hole perpendicular to substrate.
Preferably, the width of strip groove is 0.5~2 millimeter, and hole is circular hole, and its internal diameter is 0.5~2 millimeter, adjacent two
Distance is 5~20 millimeters between individual strip groove, and the distance between adjacent two parallel lines where hole are 5~20 millimeters.
Preferably, the gross thickness of the first sacrifice layer and the second sacrifice layer is 0.5~8 micron, and the first sacrifice layer and second
The thickness ratio of sacrifice layer is 3~5:1.
Preferably, strip groove longitudinal section is the square or trapezoidal or arc or U-shaped of upper opening, and hole is cylinder, length
Cube shape, cone, pyramid, truncated cone-shaped or prismatic table shape.
A kind of preparation method of solar battery epitaxial wafer, comprises the following steps：
In substrate Epitaxial growth cushion；
The sacrifice layer of epitaxial growth first on the buffer layer；
Multiple strip grooves being parallel to each other are produced on the first sacrifice layer and/or positioned at a plurality of straight line being parallel to each other
On multiple holes, the distance between the two neighboring hole being located on the same line is less than 0.5 millimeter；
In first the second sacrifice layer of sacrifice layer Epitaxial growth, the second sacrifice layer is close to the first sacrifice layer, and second sacrifices
Formed on layer with the close-fitting strip bulge of strip groove and/or with the close-fitting projection in hole, the first sacrifice layer is corroded
Be corroded speed of the speed more than the second sacrifice layer；
Solar battery epitaxial wafer is produced in the second sacrifice layer Epitaxial growth solar cell layer.
Preferably, multiple strip grooves being parallel to each other are produced on the first sacrifice layer and/or positioned at being parallel to each other
What the multiple holes on a plurality of straight line utilized is dry etch process or utilize is photoetching and wet corrosion technique, epitaxial growth
Cushion, the first sacrifice layer, the second sacrifice layer and solar cell layer use metallo-organic compound Chemical Vapor-Phase Epitaxy
Technology.
Preferably, the thickness of the first sacrifice layer is 0.4~6.4 micron, and the thickness of the second sacrifice layer is 0.1~1.6 micron,
The gross thickness of the first sacrifice layer and the second sacrifice layer is 0.5~8 micron, and the thickness ratio of the first sacrifice layer and the second sacrifice layer is
3~5:1.
Above-mentioned technical proposal of the invention has advantages below compared to existing technology：
Solar battery epitaxial wafer that the present invention is provided and preparation method thereof, is sacrificed by setting the first sacrifice layer and second
Layer, and the speed that is corroded of the first sacrifice layer is more than the speed that is corroded of the second sacrifice layer, and set on the first sacrifice layer many
Relative set multiple strip bulge on the individual strip groove being parallel to each other, the second sacrifice layer, or set on the first sacrifice layer
Multiple is located at the holes on a plurality of straight line that is parallel to each other, and the distance between the two neighboring hole being located on the same line is less than
0.5 millimeter, relative set is multiple raised on the second sacrifice layer, sets be parallel to each other many on the first sacrifice layer also or simultaneously
Individual strip groove and the multiple holes on a plurality of straight line being parallel to each other, and strip groove and the straight line parallel where hole, make
Two-layer sacrifice layer along strip groove direction the speed that is corroded is slow and the speed that is corroded in its vertical direction.
Selective corrosion liquid can effectively be suppressed to occur with the situation in uncertain direction and different speed corrosion sacrifice layers.Direction
The adjustable stripping process of controllable, speed contributes to corrosive liquid to the supplement in corrosion reaction forward position to reduce time of stripping technology,
It is also prevented from gas produced by corrosion reaction and substrate, solar cell layer reaction and causes substrate and solar cell layer
Damage, and the pressure produced by accumulation of the gas between substrate and solar cell layer can be prevented to solar cell
The damage of layer and substrate, so as to improve the quality of solar battery product and the yields of producing line.
Brief description of the drawings
Fig. 1 is a kind of structural representation of solar battery epitaxial wafer of the embodiment of the present invention 1；
Fig. 2 is the structural representation of the first sacrifice layer of the embodiment of the present invention 1；
Fig. 3 be the embodiment of the present invention 1 partial sacrificial layer be corroded after solar battery epitaxial wafer structural representation.
Fig. 4 is a kind of structural representation of variant embodiment of the first sacrifice layer in the embodiment of the present invention 1；
Fig. 5 is the structural representation of another variant embodiment of the first sacrifice layer in the embodiment of the present invention 1；
Fig. 6 is a kind of concrete structure schematic diagram of the solar battery epitaxial wafer in the embodiment of the present invention 1；
Fig. 7 is a kind of flow chart of the preparation method of the solar battery epitaxial wafer in the embodiment of the present invention 2.
Reference is expressed as in figure：1- substrates, 11- trimmings, 2- cushions, 3- sacrifice layers, the sacrifice layers of 31- first,
311- strip grooves, 312- holes, the sacrifice layers of 32- second, 321- strip bulges, 322- projections, 4- solar cell layers, 41-
One ohmic contact layer, 42- first windows layer, 43- launch sites, 44- bases, 45- back surface fields, the Window layers of 46- second, the Europe of 47- second
Nurse contact layer, 5- second buffer layers, 6- electrodes.
Specific embodiment
In order that those skilled in the art more fully understand present disclosure, with reference to the accompanying drawings and examples to this
The there is provided technical scheme of invention is described in further detail.
Embodiment 1
As illustrated in fig. 1 and 2, present embodiments provide a kind of solar battery epitaxial wafer, including set gradually substrate 1,
Cushion 2, sacrifice layer 3 and solar cell layer 4, wherein, sacrifice layer 3 includes the first sacrifice layer 31 and the second sacrifice layer 32, the
One sacrifice layer 31 is close to cushion 2 and is set, and the second sacrifice layer 32 is close to the first sacrifice layer 31 and is set, the first sacrifice layer 31 it is rotten
Erosion speed is distributed with multiple bar shapeds being parallel to each other recessed more than the speed that is corroded of the second sacrifice layer 32 on the first sacrifice layer 31
Groove 311, has the multiple and close-fitting strip bulge 321 of strip groove 311 on the second sacrifice layer 32.Fig. 2 is shown in Fig. 1
The A-A of solar battery epitaxial wafer to the part or all of of sectional view, wherein, the second sacrifice layer in intercalation in strip groove 311
32 strip bulge 321.
The solar battery epitaxial wafer that the present embodiment is provided is by setting two-layer sacrifice layer, i.e. the first sacrifice layer 31 and second
Sacrifice layer 32, and the speed that is corroded of the first sacrifice layer 31 is more than the speed that is corroded of the second sacrifice layer 32, and sacrificed first
Relative set multiple strip bulge 321 on multiple strip grooves 311 being parallel to each other, the second sacrifice layer 32 is set on layer 31, is made
Two-layer sacrifice layer along the direction of strip groove 311 (i.e. Y-direction) the speed that is corroded is slow and its vertical direction (i.e. X side
To) on the speed that is corroded.Because, when the edge of the first sacrifice layer 31 along the direction of strip groove 311 (i.e. Y-direction)
When rapidly being eroded, due in strip groove 311 intercalation slow second sacrifice layer 32 that is corroded bar shaped it is convex
321 are played, so as to drag be corroded speed of the slow sacrifice layer 3 in the direction (i.e. Y-direction).And, intercalation in the first sacrifice layer 31
The strip bulge 321 of the second sacrifice layer 32 can also slow down supplement of the corrosive liquid to reaction front, can further drag slow sacrificial
Domestic animal 3 speed that is corroded in the direction (i.e. Y-direction) of layer.And the direction vertical with the bearing of trend of strip groove 311 (i.e. X side
To) on, the first sacrifice layer 31 of the speed that is mostly corroded, and, as shown in figure 3, in solar cell extension
Under stress or the outside stress for applying inside piece, the corresponding solar cell layer 4 in the part of sacrifice layer 3 being corroded can
Gradually tilt, i.e., substrate 1 understands shape at an angle with solar cell layer 4, so as to be conducive to reacting the timely of the gas for producing
Discharge, and corrosive liquid is to the flowing in corrosion reaction forward position, you can corrosive liquid is supplemented in time to ensure in the direction (i.e. X-direction)
Sacrifice layer 3 the speed that is corroded.The sacrifice layer 3 of the solar battery epitaxial wafer is when selectively corrosion is corroded along one
The speed that is corroded that the speed that is corroded in direction (i.e. X-direction) is more than on the direction (i.e. Y-direction) vertical with the direction, i.e., along one
Substrate 1 is more than dividing in its vertical direction (i.e. Y-direction) with the separating rate of solar cell layer 4 on individual direction (i.e. X-direction)
From speed, can effectively suppress the situation that selective corrosion liquid corrodes sacrifice layer 3 with uncertain direction and different speed
Occur.Direction is controllable, the adjustable stripping process of speed contributes to corrosive liquid to the supplement in corrosion reaction forward position to reduce stripping work
The time of skill, it is also prevented from produced gas and causes substrate 1 and solar cell with substrate 1, the reaction of solar cell layer 4
The damage of layer 4, and the pressure produced by accumulation of the gas between substrate 1 and solar cell layer 4 can be prevented to too
The damage of positive energy battery layers 4 and substrate 1, so as to improve the quality of solar battery product and the yields of producing line.
Above-mentioned strip groove 311 can be the whole sacrifice layer 3 of insertion, or two ends apart from the edge of sacrifice layer 3
There are some distances.Above-mentioned strip groove 311 can be with the end, the first sacrifice layer 31 now in strip groove 311 and
The top of the strip bulge 321 of two sacrifice layers 32 is in contact；Strip groove 311 can also not have with the end, i.e. the second sacrifice layer
The top of the strip bulge 321 on 32 is in contact through the first sacrifice layer 31 with cushion 2.
Specifically, the material of above-mentioned first sacrifice layer 31 is AlxGa1-xAs, the material of the second sacrifice layer 32 is AlyGa1- yAs, and x>y.Because working as x>During y, selective corrosion liquid, such as hydrofluoric acid is to AlxGa1-xThe corrosion rate of As is more than to AlyGa1- yThe corrosion rate of As.AlxGa1-xX in As materials can be 0.7~1, AlyGa1-yY in As materials can be 0.6~0.7.It is preferred that
Ground, AlxGa1-xX in As materials can be 0.8~0.95, AlyGa1-yY in As materials can be 0.61~0.68.Further preferably
Ground, AlxGa1-xX in As materials can be 0.9, AlyGa1-yY in As materials can be 0.65.
Specifically, the preferred offside of substrate 1 has two trimmings 11 being parallel to each other, and strip groove 311 is perpendicular to lining
Two trimmings 11 at bottom 1.Two trimmings 11 on substrate 1 can be easy to identification and fixation during processing.
Specifically, the width of strip groove 311 is 0.5~2 millimeter.Accordingly, it is recessed with bar shaped on the second sacrifice layer 32
The width of the strip bulge 321 that groove 311 coordinates also is 0.5~2 millimeter, it is preferable that the width of strip groove 311 can be 1~1.6
Millimeter, correspondingly, the width of strip bulge 321 is also 1~1.6 millimeter.It is further preferred that the width of strip groove 311 can
It it is 1.5 millimeters, the width of strip bulge 321 is also 1.5 millimeters.The specific width of strip groove 311 can be according to actual corrosion work
The corrosion rate of skill is selected, but if too narrow meeting causes that the corrosion rate in the orthogonal both direction of sacrifice layer 3 is poor
It is different not substantially, and can increase the overall time of the stripping technology of the solar battery epitaxial wafer if too wide.
Specifically, distance is 5~20 millimeters between two neighboring strip groove 311.Preferably, two neighboring strip groove
The distance between 311 is 8~16 millimeters.It is further preferred that the distance between two neighboring strip groove 311 is 9~12 millis
Rice.Specifically, the distance between two neighboring strip groove 311 is 10 millimeters.The distance between two neighboring strip groove 311
Set also dependent on being actually needed, but being corroded in both direction is mutually perpendicular to if control is not had if excessive
The effect of speed, the first sacrifice layer 31 between two neighboring strip groove 311 also occurs the speed that is corroded of subregion
It is very fast and form irregular passage and insert into the inner portion so as to cause bad peel results.And if too narrow also result in the sun
The overall time of the stripping technology of energy battery epitaxial wafer increases.
Specifically, the gross thickness of the first sacrifice layer 31 and the second sacrifice layer 32 is 0.5~8 micron, and the first sacrifice layer 31
It is 3~5 with the thickness ratio of the second sacrifice layer 32:1.The thickness of the first sacrifice layer 31 can be 0.4~6.4 micron, the second sacrifice layer
32 thickness can be 0.1~1.6 micron.The first sacrifice layer 31 and the second sacrifice layer 32 in the thickness range can not only be caused
The entirety of sacrifice layer 3 time that is corroded is shorter, and can preferably protect solar cell layer 4 and substrate 1.Preferably, on
It is 1~7.5 micron to state the gross thickness of the first sacrifice layer 31 and the second sacrifice layer 32, the first sacrifice layer 31 and the second sacrifice layer 32
Thickness ratio is 4:1.The thickness of the first sacrifice layer 31 can be 0.7~6 micron, and the thickness of the second sacrifice layer 32 can be 0.3~2 micro-
Rice.
Specifically, the longitudinal section of strip groove 311 for upper opening square or trapezoidal or arc or U-shaped or other are irregular
Shape.
As the variant embodiment of the present embodiment, as shown in figure 4, also linear array can be set on the first sacrifice layer 31
Multiple holes 312, this some holes 312 is located on a plurality of straight line that is parallel to each other, is had on the second sacrifice layer 32 multiple with this some holes
312 close-fitting raised 322.As long as the distance between the two neighboring hole 312 being located along the same line is smaller, such as less than
Two neighboring raised the distance between 322 be located along the same line on 0.5 millimeter, namely the second sacrifice layer 32 are smaller, also can
The function that the strip bulge 321 of above-mentioned embedded strip groove 311 is realized is realized, that is, causes that sacrifice layer 3 is selectively being corroded
During corrosion along the place rectilinear direction (Y-direction) of hole 312 being corroded speed it is slow and with the straight line vertical direction (i.e. X side
To) on the speed that is corroded it is fast.Preferably, the distance between above-mentioned two neighboring hole 312 being located along the same line is less than 0.4
Millimeter；It is further preferred that the distance between above-mentioned two neighboring hole 312 being located along the same line is less than 0.3 millimeter, specifically
It can be 0.2 millimeter or 0.1 millimeter.Wherein, this some holes 312 for being set on the first sacrifice layer 31 can be that through hole can also be blind
Hole.
It is preferred that, two trimmings 11 of straight line where hole 312 perpendicular to substrate 1.
Specifically, when hole 312 is provided that on the first sacrifice layer 31 and the hole 312 is circular hole, its internal diameter is concretely
0.5~2 millimeter.Accordingly, the external diameter of raised 322 for coordinating with hole 312 is also 0.5~2 millimeter.Preferably, the internal diameter in hole 312
It can be 1~1.6 millimeter, correspondingly, raised 322 external diameter is also 1~1.6 millimeter.It is further preferred that the internal diameter in hole 312 can
It it is 1.5 millimeters, correspondingly, raised 322 external diameter is also 1.5 millimeters.
Specifically, the distance between adjacent two parallel lines where hole 312 are 5~20 millimeters.Preferably, hole 312
The distance between adjacent two parallel lines at place are 8~16 millimeters.It is further preferred that adjacent two where hole 312
The distance between parallel lines is 9~12 millimeters.Specifically, the distance between adjacent two parallel lines where hole 312 are
10 millimeters.
Specifically, hole 312 be cylinder, cuboid, cone, pyramid, truncated cone-shaped or prismatic table shape, or its
His irregular shape.
As another variant embodiment of the present embodiment, as shown in figure 5, can be with above-mentioned first sacrifice layer 31
Multiple shorter strip grooves 311 are provided with, the plurality of shorter strip groove 311 is also in a plurality of straight line being parallel to each other
On, the strip groove 311 being located on the same line is arranged in order and the distance between two neighboring strip groove 311 is less than 5
Millimeter.Shorter strip groove 311 near the edge of sacrifice layer 3 is close apart from the edge of sacrifice layer 3 or direct insertion is sacrificial
The edge of domestic animal layer 3.Or, strip groove 311 and hole 312 also can be simultaneously provided with above-mentioned first sacrifice layer 31, multiple bar shapeds are recessed
Groove 311 is parallel to each other, and multiple holes 312 are located on a plurality of straight line being parallel to each other.Also, the straight line where hole 312 also must be with
Strip groove 311 is parallel, so that the speed that is corroded for ensureing sacrifice layer 3 is along the direction (i.e. Y-direction) of strip groove 311
Slowly, than very fast in perpendicular direction (i.e. X-direction).In addition, shorter strip groove 311 can also be spaced with hole 312
It is arranged on same straight line.
Other structures similar with said structure can also be set on sacrifice layer 3, as long as it enables to sacrifice layer 3 along one
The speed that is corroded in individual direction is faster than perpendicular direction.
Specifically, as shown in fig. 6, solar cell layer 4 successively include the first ohmic contact layer 41, first window layer 42,
Launch site 43, base 44, back surface field 45, the second Window layer 46 and the second ohmic contact layer 47.The material of the first ohmic contact layer 41
For GaAs, thickness be 50-300 nanometer, first window layer 42 material for GaInP, thickness be 10-100 nanometers, launch site 43
Material be GaAs, base 44 material for GaAs, back surface field 45 material be GaInP, launch site 43, base 44 and back surface field 45 it is total
Thickness is 2-5 micron, and the material of the second Window layer 46 is GaInP, thickness is 10-100 nanometers, the material of the second ohmic contact layer 47
Expect for GaAs, thickness are 50-300 nanometers.Also include second buffer layer 5, cushion 2 between solar cell layer 4 and sacrifice layer 3
GaAs is with the material of second buffer layer 5 and thickness is 100-900 nanometers.Second ohm of the solar battery epitaxial wafer
The upper surface of contact layer 47 is additionally provided with electrode 6, and the electrode 6 is made up of 30~150 nanometers of titanium and 50~500 nanometers of gold
Metal composite film.
Embodiment 2
As shown in fig. 7, present embodiments providing a kind of preparation method of solar battery epitaxial wafer, comprise the following steps：
S1：Epitaxial growth buffer 2, can specifically use metallo-organic compound Chemical Vapor-Phase Epitaxy technology on substrate 1
(MOCVD).The metallo-organic compound Chemical Vapor-Phase Epitaxy technology is currently used for III-V solar cell system
Make the growth technology of most ripe best results, in addition can also the slow molecular beam epitaxy technique of growth selection
(MBE)。
S2：The first sacrifice layer of epitaxial growth 31, can specifically use outside metallo-organic compound chemical gaseous phase on the buffer layer 2
Prolong technology (MOCVD).
S3：Multiple strip grooves 311 being parallel to each other are produced on the first sacrifice layer 31, or, in the first sacrifice layer
The multiple holes 312 on a plurality of straight line being parallel to each other and the two neighboring hole being located on the same line are produced on 31
The distance between 312 are less than 0.5 millimeter.The multiple bar shapeds being parallel to each other can also be produced on the first sacrifice layer 31 simultaneously recessed
Groove 311 and the multiple holes 312 on a plurality of straight line being parallel to each other, and strip groove 311 is flat with the straight line at the place of hole 312
OK.Specifically, make strip groove 311 and hole 312 uses dry etch process, its effect is good and etched features are accurate；
Photoetching and wet corrosion technique can also be used, wet etching low cost is easy to implement.
S4：In the second sacrifice layer of Epitaxial growth 32 of the first sacrifice layer 31, specifically can be using metallo-organic compound chemistry
Vapor phase epitaxy technique (MOCVD), the second sacrifice layer 32 is close to form sacrificial with first on the first sacrifice layer 31, and the second sacrifice layer 32
The close-fitting strip bulge 321 of strip groove 311 on domestic animal layer 31.When making has hole 312 on the first sacrifice layer 31, second
Also close-fitting with hole 312 raised 322 can be formed on sacrifice layer 32, the first sacrifice layer 31 is corroded speed more than the second sacrifice
The speed that is corroded of layer 32.
S5：Solar battery epitaxial wafer is produced in the Epitaxial growth solar cell layer 4 of the second sacrifice layer 32, specifically may be used
Using metallo-organic compound Chemical Vapor-Phase Epitaxy technology (MOCVD).
This is made in the method for solar battery epitaxial wafer using extension lift-off technology, by setting the He of the first sacrifice layer 31
Second sacrifice layer 32, and the first sacrifice layer 31 be corroded speed of the speed more than the second sacrifice layer 32 that is corroded, and first
Relative set multiple strip bulge on multiple strip grooves 311 being parallel to each other, the second sacrifice layer 32 is set on sacrifice layer 31
321, or multiple holes 312 on a plurality of straight line that is parallel to each other are produced on the first sacrifice layer 31 and positioned at same
Less than 0.5 millimeter, the relative set on the second sacrifice layer 32 is multiple raised in the distance between two neighboring hole 312 on straight line
322, multiple strip grooves 311 for being parallel to each other and many positioned at what is be parallel to each other are produced on the first sacrifice layer 31 also or simultaneously
Multiple holes 312 on bar straight line, and strip groove 311 and the straight line parallel where hole 312 so that two-layer sacrifice layer is along bar shaped
The speed that is corroded in the direction of groove 311 (i.e. Y-direction) it is slow and in its vertical direction (i.e. X-direction) be corroded speed compared with
Hurry up.Selective corrosion liquid can effectively be suppressed to occur with the situation in uncertain direction and different speed corrosion sacrifice layers 3.
Direction is controllable, the adjustable stripping process of speed contribute to corrosive liquid to the supplement in corrosion reaction forward position with reduce stripping technology when
Between, it is also prevented from the gas produced by corrosion reaction and causes substrate 1 and solar-electricity with substrate 1, the reaction of solar cell layer 4
The damage of pond layer 4, and the pressure pair produced by accumulation of the gas between substrate 1 and solar cell layer 4 can be prevented
The damage of solar cell layer 4 and substrate 1, so as to improve the quality of solar battery product and the yields of producing line.
After above-mentioned solar battery epitaxial wafer is produced, first, electrode 6, electrode are produced on solar cell layer 4
6 making can specifically use electron beam evaporation or sputtering method, it is preferred to use electron beam evaporation method, and it can be to high-melting-point gold
Category is evaporated plated film, with good directionality, has certain advantage on film forming thickness and pattern.Then, will be provided with
The upper surface of solar cell layer 4 of electrode 6 is pasted in other thin carriers (such as very thin copper sheet, plastic sheeting).Finally,
Optionally erode the first sacrifice layer 31 and the second sacrifice layer 32 is separated with by solar cell layer 4 with substrate 1, so as to make
Sunny energy battery.
Specifically, the thickness of above-mentioned first sacrifice layer 31 be 0.4~6.4 micron, material be AlxGa1-xAs, second sacrifices
The thickness of layer 32 is 0.1~1.6 micron, material is AlyGa1-yAs, wherein x>Y, x concretely 0.7~1, y concretely 0.6
~0.7.The gross thickness of the first sacrifice layer 31 and the second sacrifice layer 32 is 0.5~8 micron, and the first sacrifice layer 31 and second is sacrificed
The thickness ratio of layer 32 is 3~5:1.
The width of the above-mentioned strip groove 311 made on the first sacrifice layer 31 is 0.5~2 millimeter, when hole 312 is circular hole
When its internal diameter also be 0.5~2 millimeter.Distance is 5~20 millimeters between two neighboring strip groove 311, adjacent where hole 312
The distance between two parallel lines are 5~20 millimeters.The longitudinal section of strip groove 311 for upper opening square or trapezoidal or
Arc or U-shaped or other irregular shapes, hole 312 are cylinder, cuboid, cone, pyramid, truncated cone-shaped or terrace with edge
Shape, or other irregular shapes.
In addition, having two trimmings 11 on substrate 1, the above-mentioned strip groove 311 being located on the first sacrifice layer 31 preferably hangs down
Directly in two trimmings 11, the above-mentioned place straight line of hole 312 being located on the first sacrifice layer 31 is it is also preferred that perpendicular to two trimmings
11。
Specifically, as shown in fig. 6, solar cell layer 4 successively include the first ohmic contact layer 41, first window layer 42,
Launch site 43, base 44, back surface field 45, the second Window layer 46 and the second ohmic contact layer 47.The material of the first ohmic contact layer 41
For GaAs, thickness be 50-300 nanometer, first window layer 42 material for GaInP, thickness be 10-100 nanometers, launch site 43
Material be GaAs, base 44 material for GaAs, back surface field 45 material be GaInP, launch site 43, base 44 and back surface field 45 it is total
Thickness is 2-5 micron, and the material of the second Window layer 46 is GaInP, thickness is 10-100 nanometers, the material of the second ohmic contact layer 47
Expect for GaAs, thickness are 50-300 nanometers.Also include second buffer layer 5, cushion 2 between solar cell layer 4 and sacrifice layer 3
GaAs is with the material of second buffer layer 5 and thickness is 100-900 nanometers.Second ohm of the solar battery epitaxial wafer
The upper surface of contact layer 47 is additionally provided with electrode 6, and the electrode 6 is made up of 30~150 nanometers of titanium and 50~500 nanometers of gold
Metal composite film.
Obviously, above-described embodiment is only intended to clearly illustrate example, and not to the restriction of implementation method.It is right
For those of ordinary skill in the art, can also make on the basis of the above description other multi-forms change or
Change.There is no need and unable to be exhaustive to all of implementation method.And the obvious change thus extended out or
Among changing still in the protection domain of the invention.
Claims (10)
1. a kind of solar battery epitaxial wafer, including substrate (1), cushion (2), sacrifice layer (3) and the solar energy for setting gradually
Battery layers (4), it is characterised in that the sacrifice layer (3) at least includes the first sacrifice layer (31) and the second sacrifice layer (32), described
First sacrifice layer (31) is close to the cushion (2) setting, and second sacrifice layer (32) is close to first sacrifice layer (31)
Set, the be corroded speed of the speed more than second sacrifice layer (32) that is corroded of first sacrifice layer (31)；
Multiple strip grooves (311) being parallel to each other, second sacrifice layer are distributed with first sacrifice layer (31)
(32) have on multiple with the strip groove (311) close-fitting strip bulge (321)；And/or,
Multiple holes (312) are distributed with first sacrifice layer (31), the hole (312) is positioned at a plurality of straight line being parallel to each other
On, the distance between two neighboring described hole (312) being located along the same line is less than 0.5 millimeter, second sacrifice layer
(32) there are multiple projections (322) close-fitting with the hole (312) on.
2. solar battery epitaxial wafer as claimed in claim 1, it is characterised in that the material of first sacrifice layer (31) is
AlxGa1-xAs, the material of second sacrifice layer (32) is AlyGa1-yAs, and x>y.
3. solar battery epitaxial wafer as claimed in claim 2, it is characterised in that the Al of first sacrifice layer (31)xGa1- xX is 0.7~1, the Al of second sacrifice layer (32) in As materialsyGa1-yY is 0.6~0.7 in As materials.
4. the solar battery epitaxial wafer as any one of claim 1-3, it is characterised in that：
The offside of the substrate (1) has two trimmings being parallel to each other (11)；
Two trimmings (11) of the strip groove (311) perpendicular to the substrate (1)；
Two trimmings (11) of straight line where the hole (312) perpendicular to the substrate (1).
5. the solar battery epitaxial wafer as any one of claim 1-3, it is characterised in that the strip groove
(311) width is 0.5~2 millimeter, and the hole (312) is circular hole, and its internal diameter is 0.5~2 millimeter, the two neighboring bar shaped
Between groove (311) distance be 5~20 millimeters, the distance between adjacent two parallel lines where the hole (312) be 5~
20 millimeters.
6. the solar battery epitaxial wafer as any one of claim 1-3, it is characterised in that first sacrifice layer
And the gross thickness of second sacrifice layer (32) is 0.5~8 micron, and first sacrifice layer (31) and described second sacrificial (31)
The thickness ratio of domestic animal layer (32) is 3~5:1.
7. solar battery epitaxial wafer as claimed in claim 1, it is characterised in that strip groove (311) longitudinal section is
The square or trapezoidal or arc or U-shaped of upper opening, the hole (312) is cylinder, cuboid, cone, pyramid, circle
Platform shape or prismatic table shape.
8. a kind of preparation method of solar battery epitaxial wafer, it is characterised in that comprise the following steps：
In substrate (1) Epitaxial growth cushion (2)；
In the cushion (2) the first sacrifice layer of Epitaxial growth (31)；
Multiple strip grooves (311) being parallel to each other are produced on first sacrifice layer (31) and/or positioned at being parallel to each other
A plurality of straight line on multiple holes (312), the distance between the two neighboring described hole (312) being located on the same line is less than
0.5 millimeter；
In first sacrifice layer (31) the second sacrifice layer of Epitaxial growth (32), second sacrifice layer (32) is close to described
Formed on one sacrifice layer (31), and second sacrifice layer (32) and the strip groove (311) close-fitting strip bulge
(321) and/or close-fitting with the hole (312) raised (322), first sacrifice layer (31) is corroded speed more than institute
State the speed that is corroded of the second sacrifice layer (32)；
Solar battery epitaxial wafer is produced in second sacrifice layer (32) Epitaxial growth solar cell layer (4).
9. the preparation method of solar battery epitaxial wafer as claimed in claim 8, it is characterised in that in first sacrifice layer
(31) multiple strip grooves (311) being parallel to each other and/or many on a plurality of straight line being parallel to each other are produced on
What the individual hole (312) utilized is dry etch process or utilize is photoetching and wet corrosion technique, is delayed described in epitaxial growth
Rush layer (2), first sacrifice layer (31), second sacrifice layer (32) and the solar cell layer (4) and use gold
Category organic compound Chemical Vapor-Phase Epitaxy technology.
10. the preparation method of solar battery epitaxial wafer as claimed in claim 8, it is characterised in that first sacrifice layer
(31) thickness is 0.4~6.4 micron, and the thickness of second sacrifice layer (32) is 0.1~1.6 micron, and described first sacrifices
The gross thickness of layer (31) and second sacrifice layer (32) is 0.5~8 micron, and first sacrifice layer (31) and described second
The thickness ratio of sacrifice layer (32) is 3~5:1.
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| CN110634992B (en) * | 2019-09-04 | 2021-04-13 | 中国电子科技集团公司第十八研究所 | Preparation method of composite structure material substrate for thin film gallium arsenide solar cell |
| CN114497293A (en) * | 2021-12-29 | 2022-05-13 | 西安电子科技大学芜湖研究院 | Preparation stripping method of epitaxial layer and preparation method of semiconductor device |
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| CN102804408A (en) * | 2009-09-10 | 2012-11-28 | 密歇根大学董事会 | Methods of preparing flexible photovoltaic devices using epitaxial liftoff, and preserving the integrity of growth substrates used in epitaxial growth |
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| CN102593297A (en) * | 2011-01-04 | 2012-07-18 | 半材料株式会社 | A method for manufacturing semiconductor light emitting device |
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