CN108520901A - Thin-film solar cells and its manufacturing method - Google Patents
Thin-film solar cells and its manufacturing method Download PDFInfo
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- CN108520901A CN108520901A CN201810342364.6A CN201810342364A CN108520901A CN 108520901 A CN108520901 A CN 108520901A CN 201810342364 A CN201810342364 A CN 201810342364A CN 108520901 A CN108520901 A CN 108520901A
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
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- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0687—Multiple junction or tandem solar cells
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses a kind of thin-film solar cells and its manufacturing method, the thin-film solar cells includes：Conductive back electrode support construction；First electrode layer in back electrode support construction；Battery active layer in first electrode layer；With the second electrode lay on battery active layer；Wherein, the back electrode support construction is conductively connected with the first electrode layer, and supports the battery active layer.The thin-film solar cells and its manufacturing method of the embodiment of the present invention, simplify the preparation process of flip chip type thin-film solar cells, improve production efficiency.
Description
Technical field
The embodiment of the present invention is related to technical field of semiconductors, more particularly to a kind of thin-film solar cells and its manufacture
Method.
Background technology
Solar cell is played an important role as a kind of clean energy resource in national defence and civilian aspect.Especially film
Solar cell, in many fields due to its frivolous, soft, flexible the advantages that, especially more sensitive to load weight
Space flight or air equipment on be widely used.It is prepared by flexible thin-film solar cell generally use flip-chip method.
It in its preparation process, needs to remove battery epitaxial layer from former growth substrates, it is flexible that epitaxial layer is then transferred to one
It shifts on substrate, the making of subsequent electrode is carried out on transfer substrate.It has been reported using insulation materials such as polyimides (PI)
Expect that film as transfer substrate, can obtain flexible preferable thin-film solar cells.But a disadvantage of this structure exists
In needing to draw back electrode on non-conductive substrate flexible, the step of which increase entire cell making process, and influence
Epitaxial wafer using area.
Therefore, it is necessary to a kind of thin-film solar cells of improved structure be provided, to solve the above problems.
Invention content
The embodiment of the present invention proposes a kind of thin-film solar cells and its manufacturing method, can at least simplify down
The preparation process of dress type thin-film solar cells improves production efficiency.
According to an aspect of the present invention, a kind of thin-film solar cells is provided, the thin-film solar cells includes：
Conductive back electrode support construction；First electrode layer in back electrode support construction；Battery in first electrode layer is active
Layer；With the second electrode lay on battery active layer；Wherein, the back electrode support construction and the first electrode layer are conductive
Connection, and suitable for supporting the battery active layer.
According to some embodiments, the back electrode support construction includes porous metallic layers.
According to some embodiments, the porous metallic layers include Porous Cu.
According to some embodiments, the porosity of the porous metallic layers is between 40%-70%, preferably in 50%-
Between 60%；Aperture averaging size is less than 1 μm, preferably smaller than 500nm.
According to some embodiments, the density of the back electrode support construction is not more than 10.0g/cm3, preferably no greater than
5.0g/cm3。
According to some embodiments, the back electrode support construction includes that density is not more than 5.0g/cm3Conductive metal
Layer.
According to some embodiments, the conductive metal layer includes one or more in titanium, chromium, aluminium, magnesium, zinc.
According to some embodiments, the back electrode support construction includes that density is not more than 5.0g/cm3Carbon fiber layer.
According to some embodiments, the thickness of the back electrode support construction between 15 μm -50 μm, preferably 20 μm -
Between 40 μm, more preferably between 20-30 μm.
According to some embodiments, the battery active layer includes gallium arsenide cells active layer.
The another aspect of the embodiment of the present invention also provides a kind of method preparing above-mentioned thin-film solar cells, wherein institute
Porous metallic layers are stated to prepare using de- alloyage or bubble hydrogen template.
The another aspect of the embodiment of the present invention also provides a kind of method preparing above-mentioned thin-film solar cells, including：It carries
For temporary substrates；Epitaxial growth sacrificial layer, battery active layer on temporary substrates；First is formed on the battery active layer
Electrode layer；Back electrode support construction is formed in first electrode layer, the back electrode support construction and the first electrode layer are led
Electrical connection；The protective film of sealing back electrode support construction is formed in back electrode support construction；Using corrosion corrosion sacrificial layer
To realize the stripping of temporary substrates；Using back electrode support construction as support substrate, deviate from back electrode in battery active layer
The side of support construction forms the second electrode lay on the new surface for being stripped out of battery active layer.
According to some embodiments, the method further includes：After stripping temporary substrates and sacrificial layer, removal protection
Film.
According to some embodiments, the protective film packet of sealing back electrode support construction is formed in back electrode support construction
It includes：It is formed before first electrode layer on battery active layer, a circle periphery protection is set on the outer periphery of battery active layer
The first electrode layer and the back electrode support construction are formed in the peripheral protective film by film later；In the periphery
It is formed after first electrode layer and back electrode support construction in protective film, one layer of covering protection film is set above active layer, is made
The covering protection film is connected with the peripheral protective film to seal the first electrode layer and back electrode support construction.
According to some embodiments, the thickness of the back electrode support construction between 15 μm -50 μm, preferably 20 μm -
Between 40 μm, more preferably between 20-30 μm.
According to some embodiments, the corrosive liquid can corrode the conductive metal layer as back electrode support construction.
Thin-film solar cells and its manufacturing method according to an embodiment of the invention, by the way that conductive back electrode is arranged
Support construction makes back electrode support construction and back electrode (first electrode layer) be conductively connected, to substitute traditional insulating materials
Substrate is shifted, is not only able to play a supporting role to battery active layer, and be not required to additionally draw back electrode, simplifies upside-down mounting
The preparation process of type thin-film solar cells improves production efficiency, and do not interfere with epitaxial wafer using area.
Description of the drawings
By the description made for the present invention of below with reference to attached drawing, other objects and advantages of the present invention will be aobvious and easy
See, and can help that complete understanding of the invention will be obtained.
Fig. 1 shows the structural schematic diagram of the thin-film solar cells of property embodiment according to an example of the present invention；
Fig. 2 shows a kind of schematic diagrames of the process of preparation method of the thin-film solar cells of Fig. 1；
Fig. 3 shows the schematic diagram of the process of another preparation method of the thin-film solar cells of Fig. 1；With
Fig. 4 shows the protection of the formation sealing back electrode support construction of property embodiment according to an example of the present invention
The schematic diagram of the process of film.
Specific implementation mode
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention
Attached drawing, the technical solution of the embodiment of the present invention is clearly and completely described.Unless otherwise defined, the embodiment of the present invention
And in attached drawing, same label represents same meaning.For clarity, in the attached drawing of embodiment for describing the present invention
In, the thickness in layer or region is amplified；Also, in the attached drawing of some embodiments of the invention, merely illustrate and present inventive concept phase
The structure of pass, other structures, which can refer to, to be commonly designed.In addition, some attached drawings are the basic knot for illustrating the embodiment of the present invention
Structure, and detail section is omitted.
Unless otherwise defined, the technical term or scientific terminology that the present invention uses are should be in fields of the present invention
The ordinary meaning that personage with general technical ability is understood." first ", " second " and the similar word used in the present invention
It is not offered as any sequence, quantity or importance, and is used only to distinguish different component parts." comprising " or " packet
Containing " etc. similar word indicate open meaning, other than component, assembly unit, part or the project clearly enumerated, it is not excluded that
Other elements, component, part or project." connection " either the similar word such as " connected " be not limited to physics or
The connection of machinery, but may include electrical connection, either directly or indirectly."upper", "lower", " left side ",
" right side " etc. is only used for indicating relative position relation, after the absolute position for being described object changes, then the relative position relation
May correspondingly it change.It is appreciated that ought such as layer, film, region or underlay substrate etc element be referred to as be located at another member
When "above" or "below" part, which " direct " can be located at "above" or "below" another element, or may exist intermediary element.
Fig. 1 shows the structural representation of the thin-film solar cells 100 of property embodiment according to an example of the present invention
Figure.As shown in Figure 1, thin-film solar cells 100 includes conductive back electrode support construction 1；In back electrode support construction 1
First electrode layer 2；Battery active layer 3 on the first electrode layer 2；And the second electrode lay 4 on battery active layer 3.
Back electrode support construction 1 is conductively connected with first electrode layer 2, and supports the battery active layer 3.
Thin-film solar cells 100 can be any suitable unijunction, binode or multijunction solar cell.Battery is active
Layer 3 may include the conventional expitaxial layers structures such as N-type contact layer, absorbed layer and p-type contact layer.In order to obtain higher opto-electronic conversion
GaAs based thin film solar cells can be selected in efficiency, thin-film solar cells 100, and battery active layer includes gallium arsenide cells
Active layer.
In one embodiment, by taking three-junction thin film GaAs (GaAs) solar cell as an example, battery active layer 3 can be suitable
Sequence includes battery in p-type InGaAs contact layers, the bottoms InGaAs battery, the first tunnel junctions, GaAs, the second tunnel junctions, the tops GaInP
Battery and N-type GaAs contact layers and.Wherein, p-type InGaAs contact layers are connected to first electrode layer 2, and N-type GaAs contact layers connect
It is connected to the second electrode lay 4.The thickness of battery active layer 3 is generally relatively thin, by taking thin film gallium arsenide solar cell as an example, from unijunction
Battery is to three junction batteries, and thickness is generally from 3um-12um etc..
In this embodiment, first electrode layer 2 is used as back electrode, the second electrode lay 4 to be used as front electrode, light certainly positive
Thin-film solar cells 100 is injected in electrode side.Any suitable electrode material can be selected in first electrode layer 2 and the second electrode lay 4
Material, does not limit herein.Typically, the material of first electrode layer 2 and the second electrode lay 4 may include one in copper, silver, gold, molybdenum
Kind is a variety of.The thickness of first electrode layer 2 and the second electrode lay 4 be generally 3 μm hereinafter, it is preferred that 2 μm hereinafter, more preferably in 1 μ
M or less.The thinner thickness of electrode layer is conducive to the thickness for reducing entire thin-film solar cells, and then mitigates thin film solar
The weight of battery and the flexibility for increasing thin-film solar cells.
Conductive material preparation can be used in back electrode support construction 1, such as can conductive metal material be deposited directly to first
On electrode layer 2, it is conductively connected with first electrode layer 2.Back electrode support construction 1 is used to support battery active layer 3.In particular, by
In the very thin thickness of battery active layer 3, usually only several microns of thickness, the mistake of thin-film solar cells 100 is prepared in flip-chip method
Cheng Zhong, when removing temporary substrates such as GaAs substrates, if without support construction, so thin battery active layer 3 is difficult stripping
From, or be easy to be crushed in stripping process.And thin-film solar cells according to the ... of the embodiment of the present invention, due in back of the body electricity
The side of pole, i.e. first electrode layer 1 forms back electrode support construction 1, in this way, during removing temporary substrates, back of the body electricity
Pole support construction 1 can be used as support substrate support battery active layer 3；And after having removed temporary substrates, back electrode branch
Support structure 1 can continue as support substrate, in order to continue the follow-up preparation process of battery on battery active layer 3, such as
Front electrode, i.e. the second electrode lay 4 are made, complete thin-film solar cells is ultimately formed.
Thin-film solar cells according to the ... of the embodiment of the present invention, compared to electrically non-conductive materials such as polyimides as transfer
Substrate keeps back electrode support construction and back electrode (first electrode) conductive even by the way that conductive back electrode support construction is arranged
It connects, is not required to additionally draw back electrode, simplifies the preparation process of flip chip type thin-film solar cells, improve production efficiency, and
And do not interfere with epitaxial wafer using area.
In some embodiments, in order to play good supporting role, the thickness of back electrode support construction 1 can select
Between 15 μm -50 μm, preferably between 20 μm -40 μm, more preferably between 20-30 μm.Back electrode support construction appropriate
Thickness be conducive to obtain balance between battery overall weight and the supporting role of back electrode support construction, both can guarantee and fill
The supporting role divided, while avoiding increasing the weight of thin-film solar cells, lose its flexible and frivolous property.
In some applications of thin-film solar cells, especially in the space flight or aviation more sensitive to load weight
In equipment, in order to further mitigate the weight of thin-film solar cells, preferably to play the advantage of thin-film solar cells,
The density of back electrode support construction 1 is set to be not more than 10.0g/cm3, preferably no greater than 8g/cm3, more preferably no more than
5.0g/cm3。
In order to obtain the density of desired back electrode support construction 1 under certain thickness, according to some embodiments, the back of the body
Electrode supporting structure 1 is prepared using lightweight metal material, such as one or more materials in titanium, chromium, aluminium, magnesium, zinc can be selected
Material.Preferably, the density of lightweight metal material is not more than 5.0 g/cm3.The density of Titanium is 4.5g/cm3, as electrode branch
It is more notable to support material result.
According to other embodiments, in order to mitigate the weight or density of back electrode support construction 1, back electrode support construction 1
The structure of porous metallic layers may be used.In addition, porous structure heat dissipation performance is good, the performance of battery can also be improved.
Preferably, the density of porous metallic layers is not more than 5.0g/cm3.These embodiments are particularly suitable for heavier metal material, example
Such as copper (Cu), silver-colored (Ag), golden (Au), molybdenum (Mo).In order to reduce the manufacturing cost of battery, abundance and price can be selected
Cheap metal material forms porous metallic layers.For example, preparing Porous Cu using common copper, supports and tie as back electrode
Structure 1.De- alloyage or template, such as bubble hydrogen template can be used in the preparation of porous metallic layers.Prepared porous metals
The porosity of layer is between 40%-70%, preferably between 50%-60%；Aperture averaging size is less than 1 μm, preferably smaller than
500nm.By selecting suitable porosity and aperture size, it is ensured that back electrode support construction 1 has enough intensity,
There is weight as light as possible simultaneously.
The basic procedure of de- alloyage is the alloy for first preparing two or more metals, is then closed using inorganic acid corrosion
The metal (zinc, chromium, manganese, nickel etc.) of wave more living in gold, only leaves the inert metal (gold, copper, platinum etc.) not reacted with acid.Due to
A kind of metal is corroded and dissolves in alloy, and the position of original crystal grain or atom just leaves cavity, forms three-dimensional more
Pore structure.Atomic ratio, crystalline phase and reaction temperature have larger in the porosity and alloy of porous metallic layers prepared by de- alloyage
Relationship, porosity and pore size relatively easily control.Porous metallic layers prepared by de- alloyage may include object under room temperature
Reason and chemical property stabilization, the preferable metal of electric conductivity.In some embodiments, porous metallic layers may include Porous Cu, more
Kong Yin, porous gold and porous molybdenum.
Template refers to then passing through chemical plating or plating using the material with nano-porous structure as template
Method deposits required metal in template, removes removing template finally by chemical attack and obtains porous metal structure.Its
In, it is porous that bubble hydrogen template is that the bubble hydrogen by being generated in electroplating process is formed as dynamic template in deposit
Structure.In electroplating process, cathode reaction will produce a large amount of bubble hydrogen, since bladdery place does not have metal ion can
To utilize, therefore there is no metal deposit, so as to form hole in deposited metal.Porous Cu is prepared using bubble hydrogen template,
The technique of electro-coppering during existing battery can be coordinated to prepare, it is convenient, practical without increasing additional equipment and other costs.
In further embodiments, back electrode support construction 1 may include that density is not more than 5.0g/cm3Carbon fiber layer.
Since carbon fiber is good conductive material, lighter in weight prepares back electrode branch using carbon fiber layer instead of conductive metal layer
Support structure, can equally play the role of identical with conductive metal layer, draw back electrode without additional, simplify battery preparation
Technological process.
Fig. 2 shows a kind of schematic diagrames of the process of preparation method of the thin-film solar cells 100 of Fig. 1.Such as Fig. 2 institutes
Show, the preparation method of the thin-film solar cells 100 of the embodiment of the present invention uses reverse installation process, includes the following steps：
Temporary substrates 5 are provided；
Epitaxial growth sacrificial layer 6, battery active layer 3 successively on temporary substrates 5；
First electrode layer 2 and back electrode support construction 1 are sequentially formed on battery active layer 3；
Using corrosion corrosion sacrificial layer 6 realize temporary substrates 5 and battery active layer 3 stripping and；
It is support substrate with back electrode support construction 1, the battery extension inverted stratum that will have been prepared, i.e. back electrode support knot
Structure 1 is used as the bottom, first electrode layer 2 that middle layer, battery active layer 3 is used as to be used as top layer, made on battery active layer 3
Standby the second electrode lay 4.The second electrode lay 4 be located at battery active layer 3 away from the other side of back electrode support construction 1.
It can be seen that by sequence from bottom to top, thin-film solar cells 100 is from initial " battery active layer 3- first
The structure of electrode layer 2- back electrodes support construction 1 " is inverted as final " back electrode support construction 1- first electrode layer 2- batteries
The structure of active layer 3- the second electrode lays 4 ".By taking three-junction thin film gallium arsenide solar cell as an example, sequence from bottom to top is pressed,
It is final that battery active layer 3 is inverted from the structure of initial " GaInP pushes up the bottoms battery-InGaAs battery in battery-GaAs "
The structure of " battery-GaInP pushes up battery in the battery-GaAs of the bottoms InGaAs ".
Temporary substrates 5 may include the various cell substrate materials of such as GaAs, in above-mentioned preparation flow, after being stripped
Temporary substrates 5 can be used for lower primary cell and prepare, so reuse, cost-saved and resource.Sacrificial layer 6 faces in stripping
When substrate 5 when be corroded corrosion, to which temporary substrates 5 be peeled off from battery active layer.
The inventor of present inventive concept has found a problem during preparing thin-film solar cells 100 of Fig. 1：
In order to mitigate the weight of thin-film solar cells, and lightweight conductive metal material is used in back electrode support construction, as titanium,
When one or more in chromium, aluminium, magnesium, zinc, since the usual chemical property of lightweight metal material is active, is easy to react with sour,
Easily by the corrosion failure of common acid etching solution when removing temporary substrates 5, lead to not the material as back electrode support construction
Material.To solve this technical problem, inventor is by research, the preparation method of thin-film solar cells 100 shown in Fig. 2
In, before stripping sacrificial layer 6 and temporary substrates 5, especially increase the step that protective film is set in back electrode support construction 1
Suddenly；It later,, will not since back electrode support construction 1 is by protective film seal protection when removing sacrificial layer 6 and temporary substrates 5
It contacts with acid corrosive liquid, to be chemically reacted with corrosive liquid, therefore is completely preserved, it is interim in stripping
Support substrate when substrate 5 as active layer 3 will not cause active layer 3 broken.Further, the second electricity is prepared follow-up
During pole layer 4, back electrode support construction 1 can be used as support substrate, and the second electrode lay 4 and other knots are prepared to facilitate
Structure.
Fig. 3 shows the schematic diagram of the process of another preparation method of the thin-film solar cells 100 of Fig. 1.According to this hair
A bright specific embodiment, as shown in figure 3, the method for above-mentioned preparation thin-film solar cells 100 includes：
Temporary substrates 5 are provided；
Epitaxial growth sacrificial layer 6, battery active layer 3 on temporary substrates 5；
On battery active layer 3 formed first electrode layer 2, specifically, can on battery active layer 3 copper steam-plating, silver, gold,
One or more metal materials in molybdenum are as first electrode layer 2；
Then, back electrode support construction 1 is formed on the first electrode layer 2, makes back electrode support construction 1 and first electrode
Layer 2 is conductively connected, and specifically, it is 20 μm of left sides that can directly deposit a layer thickness on the first electrode layer 2 by magnetically controlled sputter method
Right light-weight metal layer, for example, it is one or more in titanium, chromium, aluminium, magnesium, zinc, as back electrode support construction 1；
Then, the protective film 7 of sealing back electrode support construction 1, the protective film 7 are formed in back electrode support construction 1
It can be made of the resin or plastic or other material not chemically reacted with corrosive liquid；
Later, use corrosion corrosion sacrificial layer 6 to realize the stripping of temporary substrates 5；
Then, optionally, protective film 7 is removed；
Later, established battery structure can be reversed, then existed using back electrode support construction 1 as support substrate
The second electrode lay 4 is prepared on battery active layer 3, specifically, one kind that can be on battery active layer 3 in copper steam-plating, silver, gold, molybdenum
Or various metals material is as the second electrode lay 4.
Note that above-mentioned steps in the case where not influencing battery preparation, can adjust sequence, or carry out side by side.Example
Such as, the step of removing protective film 7 can also carry out after forming the second electrode lay 4.
Fig. 4 shows the protection of the formation sealing back electrode support construction 1 of property embodiment according to an example of the present invention
The schematic diagram of the process of film 7.As shown in figure 4, forming the protection of sealing back electrode support construction 1 in back electrode support construction 1
Film 7, specifically includes：
It is formed before first electrode layer 2 on battery active layer 3, it is outer that a circle is set on the outer periphery of battery active layer 3
Protective film 71 (pad pasting) is enclosed, is later formed in the first electrode layer 2 and the back electrode support construction 1 described outer
It encloses in protective film 71；And
After forming first electrode layer 2 and back electrode support construction 1 in the peripheral protective film 71, on active layer 3
Setting one layer of covering protection film 72 (secondary pad pasting) in side's makes covering protection film 72 and the peripheral connection of protective film 71 to seal first
Electrode layer 2 and back electrode support construction 1.
In the preparation method of above-described embodiment, vapor deposition and sputtering form first electrode layer 2 and back electrode support construction 1
When, fixture may be provided on the peripheral protective film 71 formed on 3 outer periphery of battery active layer so that first electrode layer 2 and back of the body electricity
Pole support construction 1 is only formed in peripheral protective film 71；Simultaneously as peripheral protective film 71 is formed in mandrel area, it will not
It is additional to occupy cell area；Also, first electrode layer 2 and back electrode support knot can be sequentially formed after disposable installs fixture
Structure 1 saves process.
Certainly, the method that the formation of protective film 7 is not limited to above-mentioned pad pasting twice can also form first electrode layer 2 and the back of the body
One-pass film-forming after electrode supporting structure 1 ensures that first electrode layer 2 and back electrode support construction 1 are in sealing state.
Optionally, copper (Cu), silver-colored (Ag), golden (Au), molybdenum (Mo) etc. is selected not to be sent out with corrosive liquid in first electrode layer 2
When the metal material of raw reaction, can also form protective film only around back electrode support construction 1, the is sealed without being formed
The protective film of one electrode layer 2.
In some embodiments, the thickness of back electrode support construction 1 is between 15 μm -50 μm, preferably at 20 μm -40 μm
Between.It is inadequate to the supporting role of battery active layer 3 if thickness is too small；Thickness is excessive, can density be increased, and weakens film
The weight advantage of solar cell.
In some embodiments, thin-film solar cells 100 can also include other layer of structure as needed.For example, can
To increase the structures such as back reflection layer, diffusion layer, adhesion layer, contact electrode layer between battery active layer 3 and first electrode layer 2.
The present invention does not limit this.
The back electrode support construction 1 for illustrating to prepare thin-film solar cells as shown in Figure 1 below by specific example
Method, conventional method can be used in the method for preparing other layers, and description is omitted herein.
Example 1
Porous layers of copper is prepared using de- alloyage, as back electrode support construction 1 shown in Fig. 1-2, steps are as follows：
Vapor deposition forms first electrode layer 2, such as Cu electrode layers on the battery active layer 3 that temporary substrates 5 carry；
The ormolu of sputtering sedimentation 40um on the first electrode layer 2, wherein the atomic ratio of copper and zinc is each in target
About 50%, the temperature of first electrode layer 2 is controlled at 100 DEG C or less when sputtering；
The intermediate products for carrying ormolu are placed in the NH that mass concentration is 20g/L4Cl, mass fraction 37%
HCl, by 55 DEG C of water-bath reaction two hours in the mixed solution that the volume ratio of NH4Cl and HCl is 1: 10 composition or more, directly
It is generated to bubble-free, to slough the zinc in ormolu；
Intermediate products after water-bath are taken out into drying, and are put into quartz tube type annealing furnace, in N2In atmosphere, most
High-temperature is annealed 60 minutes under conditions of being 250 DEG C, to obtain porous layers of copper；
The porosity about 50% of porous layers of copper prepared by example 1, aperture are less than 1um, the ormolu of thickness, that is, original sputtering
Thickness 40um, density is in 4g/cm3Hereinafter, the porous layers of copper can be used as back electrode support construction 1.
Example 2
Porous layers of copper is prepared using bubble hydrogen template, as back electrode support construction 1 shown in Fig. 1-2, step is such as
Under：
Vapor deposition forms first electrode layer 2, such as Cu electrode layers on the battery active layer 3 that temporary substrates 5 carry；
The intermediate products for carrying first electrode layer 2 are put into quartz tube type annealing furnace, in N2In atmosphere, the highest temperature
Degree is annealed 60 minutes under conditions of being 250 DEG C；
Using first electrode layer 2 as cathode, it is electroplated in CuSO4 system electrolyte, wherein electrolyte includes matter
Amount concentration is respectively the HCHO of Na2SO4,30g/L of H2SO4,70.2g/L of CuSO4,147g/L of 50g/L, volume fraction
The respectively polyethylene glycol of HCl, 0.25mL/L of 0.25mL/L；And controlled at 25 DEG C, current density 3A/cm2,
Electroplating time 20 seconds.
After the completion of plating, porous layers of copper is obtained as back electrode support construction 1.
The electrolyte used in example 2 is that addition formaldehyde and polyethylene glycol additive obtain in the electrolyte of existing electro-coppering
It arrives, it is convenient, practical without increasing additional equipment and other costs.
Example 3
It prepares using titanium coating as the GaAs thin-film solar cells of back electrode support construction 1 shown in Fig. 1,3 and 4,
Steps are as follows：
The GaAs temporary substrates 5 of 350 μ m-thicks are provided；
Epitaxial growth nanoscale AlAs sacrificial layers 6 and GaAs batteries active layer 3 on GaAs temporary substrates 5；
The peripheral protective film 71 of one circle resin material of setting on the outer periphery of GaAs batteries active layer 3；
Fixture is mounted at the position of peripheral protective film 71, a layer thickness then is deposited on GaAs batteries active layer 3
Layers of copper less than 1 μm directly deposits a thickness on the first electrode layer 2 as first electrode layer 2, and by magnetically controlled sputter method
The titanium coating that degree is 20 μm or so, as back electrode support construction 1, wherein blocking due to fixture so that first electrode layer
2 and back electrode support construction 1 be formed in peripheral protective film 71；
Then, the covering protection film 72 of one layer of resin material is set above GaAs batteries active layer 3, makes covering protection
Film 72 and the peripheral connection of protective film 71 are to seal first electrode layer 2 and back electrode support construction 1；
Later, use corrosion corrosion sacrificial layer 6 to realize the stripping of GaAs temporary substrates 5；
Then, removal covering protection film 72 and peripheral protective film 71；
Later, using back electrode support construction 1 as support substrate, established GaAs battery structures is reversed, are then existed
Layers of copper is deposited on GaAs battery active layers as the second electrode lay 4.
Although some embodiments of present general inventive concept have been shown and have illustrated, those of ordinary skill in the art will manage
Solution, the described embodiments are merely a part of the embodiments of the present invention, instead of all the embodiments.Based on described reality
Example is applied, in the case of the principle and spirit without departing substantially from present general inventive concept, various change can be carried out to these embodiments.
In the case where not causing conflict, the component part of each embodiment can be combined with each other or substitute.The scope of the present invention is by weighing
Profit requires and their equivalent limits.
Claims (16)
1. a kind of thin-film solar cells, including：
Conductive back electrode support construction；
First electrode layer in back electrode support construction；
Battery active layer in first electrode layer；With
The second electrode lay on battery active layer；
Wherein, the back electrode support construction is conductively connected with the first electrode layer, and supports the battery active layer.
2. thin-film solar cells according to claim 1, which is characterized in that the back electrode support construction includes porous
Metal layer.
3. thin-film solar cells according to claim 2, which is characterized in that the porous metallic layers include Porous Cu.
4. thin-film solar cells according to claim 2, which is characterized in that the porosity of the porous metallic layers exists
Between 40%-70%, preferably between 50%-60%；Aperture averaging size is less than 1 μm, preferably smaller than 500nm.
5. thin-film solar cells according to claim 1, which is characterized in that the density of the back electrode support construction is not
More than 10.0g/cm3, preferably no greater than 5.0g/cm3。
6. thin-film solar cells according to claim 1, which is characterized in that the back electrode support construction includes density
No more than 5.0g/cm3Conductive metal layer.
7. thin-film solar cells according to claim 6, which is characterized in that the conductive metal layer include titanium, chromium,
It is one or more in aluminium, magnesium, zinc.
8. thin-film solar cells according to claim 1, which is characterized in that the back electrode support construction includes density
No more than 5.0g/cm3Carbon fiber layer.
9. according to the thin-film solar cells described in any one of claim 1-8, which is characterized in that the back electrode support knot
The thickness of structure is between 15 μm -50 μm, preferably between 20 μm -40 μm, more preferably between 20-30 μm.
10. thin-film solar cells according to claim 1, which is characterized in that the battery active layer includes GaAs
Battery active layer.
11. a kind of method preparing the thin-film solar cells as described in any one of claim 2-4, which is characterized in that institute
Porous metallic layers are stated to prepare using de- alloyage or bubble hydrogen template.
12. a kind of method preparing the thin-film solar cells according to any one of claim 6-7, including：
Temporary substrates are provided；
Epitaxial growth sacrificial layer, battery active layer on temporary substrates；
First electrode layer is formed on the battery active layer；
Back electrode support construction is formed in first electrode layer, the back electrode support construction and the first electrode layer conduction connect
It connects；
The protective film of sealing back electrode support construction is formed in back electrode support construction；
The stripping of temporary substrates is realized using corrosion corrosion sacrificial layer；
Using back electrode support construction as support substrate, second electrode is formed on the new surface that battery active layer is stripped out
Layer.
13. according to the method for claim 12, which is characterized in that further include：After stripping temporary substrates and sacrificial layer,
Remove protective film.
14. according to the method for claim 12, which is characterized in that form sealing back electrode branch in back electrode support construction
The protective film of support structure includes：
It is formed before first electrode layer on battery active layer, a circle periphery protection is set on the outer periphery of battery active layer
The first electrode layer and the back electrode support construction are formed in the peripheral protective film by film later；
After forming first electrode layer and back electrode support construction in the peripheral protective film, one layer is arranged above active layer
Covering protection film makes the covering protection film be connected with the peripheral protective film to seal the first electrode layer and back electrode branch
Support structure.
15. according to the method for claim 12, wherein the thickness of the back electrode support construction between 15 μm -50 μm,
It is preferred that between 20 μm -40 μm, more preferably between 20-30 μm.
16. according to the method for claim 12, wherein the corrosive liquid can corrode leading as back electrode support construction
Metal layer.
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Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5034068A (en) * | 1990-02-23 | 1991-07-23 | Spectrolab, Inc. | Photovoltaic cell having structurally supporting open conductive back electrode structure, and method of fabricating the cell |
| JP2010021091A (en) * | 2008-07-14 | 2010-01-28 | National Institute Of Advanced Industrial & Technology | Semiconductor electrode, and dye-sensitized photo-electrochemical cell using the same |
| CN101853795A (en) * | 2010-05-07 | 2010-10-06 | 华中科技大学 | Low-temperature thermocompression bonding method |
| WO2011044382A1 (en) * | 2009-10-07 | 2011-04-14 | Reel Solar Incorporated | Porous substrates for fabrication of thin film solar cells |
| WO2012004876A1 (en) * | 2010-07-08 | 2012-01-12 | 三菱電機株式会社 | Bonded body, semiconductor device provided with same, bonding method, and production method using same |
| CN102723404A (en) * | 2012-06-26 | 2012-10-10 | 中国科学院苏州纳米技术与纳米仿生研究所 | Method for preparing inverted-growth wide-spectrum absorption III-V multi-junction cell |
| CN102790120A (en) * | 2012-07-19 | 2012-11-21 | 中国科学院苏州纳米技术与纳米仿生研究所 | GaInP/GaAs/Ge three-junction solar battery and manufacturing method thereof |
| CN102804408A (en) * | 2009-09-10 | 2012-11-28 | 密歇根大学董事会 | Methods of preparing flexible photovoltaic devices using epitaxial liftoff, and preserving the integrity of growth substrates used in epitaxial growth |
| CN103946973A (en) * | 2011-06-29 | 2014-07-23 | 密歇根大学董事会 | Sacrificial etch protection layers for reuse of wafers after epitaxial lift off |
| CN104022176A (en) * | 2014-06-24 | 2014-09-03 | 天津三安光电有限公司 | Four-junction solar cell and preparation method thereof |
| CN104335365A (en) * | 2012-02-07 | 2015-02-04 | 密歇根大学董事会 | Thermal surface treatment for reuse of wafers after epitaxial lift off |
| US20170170355A1 (en) * | 2015-11-13 | 2017-06-15 | Solaero Technologies Corp. | Multijunction solar cells with electrically conductive polyimide adhesive |
| CN208256681U (en) * | 2018-04-16 | 2018-12-18 | 江苏宜兴德融科技有限公司 | Thin-film solar cells |
-
2018
- 2018-04-16 CN CN201810342364.6A patent/CN108520901A/en active Pending
Patent Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5034068A (en) * | 1990-02-23 | 1991-07-23 | Spectrolab, Inc. | Photovoltaic cell having structurally supporting open conductive back electrode structure, and method of fabricating the cell |
| JP2010021091A (en) * | 2008-07-14 | 2010-01-28 | National Institute Of Advanced Industrial & Technology | Semiconductor electrode, and dye-sensitized photo-electrochemical cell using the same |
| CN102804408A (en) * | 2009-09-10 | 2012-11-28 | 密歇根大学董事会 | Methods of preparing flexible photovoltaic devices using epitaxial liftoff, and preserving the integrity of growth substrates used in epitaxial growth |
| WO2011044382A1 (en) * | 2009-10-07 | 2011-04-14 | Reel Solar Incorporated | Porous substrates for fabrication of thin film solar cells |
| CN101853795A (en) * | 2010-05-07 | 2010-10-06 | 华中科技大学 | Low-temperature thermocompression bonding method |
| WO2012004876A1 (en) * | 2010-07-08 | 2012-01-12 | 三菱電機株式会社 | Bonded body, semiconductor device provided with same, bonding method, and production method using same |
| CN103946973A (en) * | 2011-06-29 | 2014-07-23 | 密歇根大学董事会 | Sacrificial etch protection layers for reuse of wafers after epitaxial lift off |
| CN104335365A (en) * | 2012-02-07 | 2015-02-04 | 密歇根大学董事会 | Thermal surface treatment for reuse of wafers after epitaxial lift off |
| CN102723404A (en) * | 2012-06-26 | 2012-10-10 | 中国科学院苏州纳米技术与纳米仿生研究所 | Method for preparing inverted-growth wide-spectrum absorption III-V multi-junction cell |
| CN102790120A (en) * | 2012-07-19 | 2012-11-21 | 中国科学院苏州纳米技术与纳米仿生研究所 | GaInP/GaAs/Ge three-junction solar battery and manufacturing method thereof |
| CN104022176A (en) * | 2014-06-24 | 2014-09-03 | 天津三安光电有限公司 | Four-junction solar cell and preparation method thereof |
| US20170069782A1 (en) * | 2014-06-24 | 2017-03-09 | Xiamen Sanan Optoelectronics Technology Co., Ltd. | Four-Junction Solar Cell and Fabrication Method |
| US20170170355A1 (en) * | 2015-11-13 | 2017-06-15 | Solaero Technologies Corp. | Multijunction solar cells with electrically conductive polyimide adhesive |
| CN208256681U (en) * | 2018-04-16 | 2018-12-18 | 江苏宜兴德融科技有限公司 | Thin-film solar cells |
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