CN104993003B - A kind of solar battery epitaxial wafer and preparation method thereof - Google Patents
A kind of solar battery epitaxial wafer and preparation method thereof Download PDFInfo
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- CN104993003B CN104993003B CN201510419281.9A CN201510419281A CN104993003B CN 104993003 B CN104993003 B CN 104993003B CN 201510419281 A CN201510419281 A CN 201510419281A CN 104993003 B CN104993003 B CN 104993003B
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- 238000005260 corrosion Methods 0.000 claims description 32
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- 229910016920 AlzGa1−z Inorganic materials 0.000 claims description 6
- 230000007423 decrease Effects 0.000 claims description 6
- 229910052727 yttrium Inorganic materials 0.000 claims description 4
- 239000007788 liquid Substances 0.000 abstract description 17
- 238000004064 recycling Methods 0.000 abstract description 4
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Abstract
A kind of solar battery epitaxial wafer and preparation method thereof, the solar battery epitaxial wafer includes substrate, cushion, combination sacrifice layer and the solar cell layer for setting gradually, combination sacrifice layer includes the first sacrifice layer, the second sacrifice layer and 3rd sacrifice layer, first sacrifice layer is close to cushion setting, 3rd sacrifice layer is close to solar cell layer setting, second sacrifice layer is arranged between the first sacrifice layer and 3rd sacrifice layer, and the speed that is corroded of the second sacrifice layer is faster than the speed that is corroded of the first sacrifice layer and 3rd sacrifice layer.Solving when making solar cell using extension lift-off technology in prior art causes, with corrosive liquid directly contact, the technical problem that is slowly corroded compared with the sacrifice corresponding substrate of layer segment and the solar cell layer being early corroded because of long-time.The epitaxial wafer can reduce infringement of the corrosive liquid to substrate and solar cell layer, it is ensured that the recycling of substrate and the performance of solar battery product.
Description
Technical field
The present invention relates to technical field of solar batteries.Specifically, it is related to a kind of solar battery epitaxial wafer and its system
Make method.
Background technology
GaAs solar battery technology quickly grows, and application progressively expands to Ground Application from space application, just
Take the formula energy and consumer electronics field wide market.GaAs solar-electricity is made using extension lift-off technology (ELO technology)
Pond, on the one hand can will reuse after GaAs substrate desquamation, significantly reduce product cost；On the other hand, flexibility can be made
GaAs solar cell, increases before not only efficiency is than peeling off, and product quality is lighter and has flexibility, is more beneficial for aviation
Space flight and portable use etc., of many uses.
The process for GaAs solar cell being made using extension lift-off technology in prior art is generally：First, using outer
Epitaxial growth fabrication techniques go out the solar battery epitaxial wafer with GaAs substrate, AlGaAs sacrifice layer and GaAs battery layers；Then,
Metal electrode is set in GaAs battery layers upper surface, and the side for being provided with metal electrode is pasted (for example with double faced adhesive tape, photoetching
Glue, cured etc.) on transfer substrate (such as very thin copper sheet, plastic sheeting etc.)；Finally, by the acid of its whole immersion selective corrosion
In property solution, due to acid solution to the selective corrosion of AlGaAs sacrifice layer (as corrosion of the hydrofluoric acid to AlGaAs and GaAs
Selection ratio is very big), so that GaAs substrate and GaAs battery layers is separated.Substrate can repeat profit through process after being stripped
With, and make metal gates and antireflective film etc. on the GaAs battery structure for stripping down further, you can form the GaAs sun
Can battery.
Time needed for GaAs battery layers are separated with substrate depends on corruption of the acid solution of selective corrosion to sacrifice layer
Erosion speed.When above-mentioned utilization extension lift-off technology makes solar cell, sacrifice layer is that the Rotating fields made on substrate connect
Continuous, in uniform thickness and x is the Al of determination valuexGa1-xAs layer.Ideally, a piece of 4 English is peeled off by conventional method
Very little GaAs hull cell needs 3～6 hours even longer time.And under normal circumstances, after partial sacrificial layer is corroded, its
The GaAs battery layers of corresponding region are just separated with substrate, the acid solution of then selective corrosion will by GaAs battery layers with
The passage corrosion removal other parts sacrifice layer that substrate is formed after separating.Therefore, corresponding compared with the early sacrifice layer segment being corroded
GaAs battery layers and substrate (usually solar battery epitaxial wafer periphery edge) will be with the acid solutions of selective corrosion
Directly contact is corroded until all of sacrifice layer, i.e. extension stripping technology is completed.Although, the general HF solution pair that selects
The corrosion of AlGaAs (sacrifice layer) and GaAs (GaAs battery layers and substrate) selects ratio very big, but in production environment, HF is molten
Other acids (hydrochloric acid, sulfuric acid, phosphoric acid etc.) material or impurity can be introduced in liquid unavoidably, the oxygen molecule dissolved in solution is added,
Easily lead to lentamente be corroded compared with the corresponding GaAs battery layers of the early sacrifice layer segment being corroded and substrate.As which is rotten
The speed of erosion is slower, and therefore the process is difficult to be monitored in real-time, but after the several hours needed for whole stripping process, substrate
Surface will form some pin holes or similar defect with the release surface of GaAs battery layers.This is recycled and too for substrate
The performance of sun energy battery product can all cause a certain degree of negative effect, or even cause the overall yields of producing line to decline.
Content of the invention
For this purpose, the technical problem to be solved is in prior art to make solar energy using extension lift-off technology
During battery, compared with the corresponding substrate of the early sacrifice layer segment being corroded and solar cell layer because of long-time and corrosive liquid directly contact
Cause slowly to be corroded, proposition is a kind of can be caused to be fallen by fast erosion away from the sacrifice layer segment of substrate and solar cell layer
And be close to substrate and solar cell layer sacrifice solar battery epitaxial wafer and its making side that layer segment is corroded more slowly
Method, so as to protect substrate and solar cell layer.
For solving above-mentioned technical problem, the invention provides following technical scheme：
A kind of solar battery epitaxial wafer, including the substrate, cushion, combination sacrifice layer and the solar cell that set gradually
Layer, combination sacrifice layer at least include the first sacrifice layer, the second sacrifice layer and 3rd sacrifice layer, and the first sacrifice layer is close to cushion and is set
Put, 3rd sacrifice layer is close to solar cell layer setting, the second sacrifice layer is arranged between the first sacrifice layer and 3rd sacrifice layer,
And second the speed that is corroded of sacrifice layer be faster than the speed that is corroded of the first sacrifice layer and 3rd sacrifice layer.
Preferably：
Second sacrifice layer is intermediate layer, at least also include between the first sacrifice layer and the second sacrifice layer one layer of sacrifice layer, the
At least also include one layer of sacrifice layer between two sacrifice layers and 3rd sacrifice layer；
From the corrosion rate incremented by successively of each layer of the first sacrifice layer to the second sacrifice layer, sacrificial to the 3rd from the second sacrifice layer
The corrosion rate of each layer of domestic animal layer is successively decreased successively.
Preferably, the material of the first sacrifice layer is AlxGa1-xAs, the material of the second sacrifice layer is AlyGa1-yAs, the 3rd sacrificial
The material of domestic animal layer is AlzGa1-zAs, wherein, y>X, and y>z.
Preferably, AlxGa1-xIn As, x is 0.5～0.6, AlyGa1-yIn As, y is 0.7～1, AlzGa1-zIn As z be 0.5～
0.6.
Preferably, the 4th sacrifice layer is provided between the first sacrifice layer and the second sacrifice layer, and the second sacrifice layer and the 3rd is sacrificed
The 5th sacrifice layer is provided between layer, and the material of the 4th sacrifice layer is AlaGa1-aAs, the material of the 5th sacrifice layer is AlbGa1-bAs,
Wherein x<a<Y, y>b>z.
Preferably, the thickness of the second sacrifice layer is less than thickness and the thickness less than 3rd sacrifice layer of the first sacrifice layer.
Preferably, the thickness from each layer of the first sacrifice layer to the second sacrifice layer successively decreases successively, from the second sacrifice layer to
The thickness incremented by successively of each layer of three sacrifice layers.
Preferably, solar cell layer includes the first ohmic contact layer, first window layer, launch site, base, the back of the body successively
Field, the second Window layer and the second ohmic contact layer.
A kind of preparation method of solar battery epitaxial wafer, comprises the following steps：
In substrate Epitaxial growth cushion；
The first sacrifice layer of epitaxial growth on the buffer layer, the first sacrifice layer are close to cushion；
In first the second sacrifice layer of sacrifice layer Epitaxial growth, the speed that is corroded of the second sacrifice layer is faster than the first sacrifice
Layer；
In the second sacrifice layer Epitaxial growth 3rd sacrifice layer, the speed that is corroded of 3rd sacrifice layer is slower than the second sacrifice
Layer；
In 3rd sacrifice layer Epitaxial growth solar cell layer, solar battery epitaxial wafer, solar cell is produced
Layer is close to 3rd sacrifice layer.
Preferably：
Between first sacrifice layer and the second sacrifice layer, also epitaxial growth has at least one of which sacrifice layer, the second sacrifice layer and the 3rd
Between sacrifice layer, also epitaxial growth has at least one of which sacrifice layer, and the second sacrifice layer is intermediate layer；
From the corrosion rate incremented by successively of each layer of the first sacrifice layer to the second sacrifice layer, sacrificial to the 3rd from the second sacrifice layer
The corrosion rate of each layer of domestic animal layer is successively decreased successively.
The technique scheme of the present invention has advantages below compared to existing technology：
1. solar battery epitaxial wafer that the present invention is provided and preparation method thereof, the solar battery epitaxial wafer at least includes
First sacrifice layer, the second sacrifice layer and 3rd sacrifice layer, the first sacrifice layer are close to cushion setting, and substrate is close to the another of cushion
Simultaneously arrange, 3rd sacrifice layer is close to solar cell layer setting, the second sacrifice layer is arranged at the first sacrifice layer and the 3rd sacrifice
Between layer, and the speed that is corroded of the second sacrifice layer is faster than the speed that is corroded of the first sacrifice layer and 3rd sacrifice layer.It is close to
The speed that is corroded of the sacrifice layer of cushion and the sacrifice layer for being close to solar cell layer is slower than away from cushion and solar-electricity
The speed that is corroded of the sacrifice layer of pond layer.Therefore, the sacrifice layer segment away from cushion and solar cell layer is by corruption quickly
Eating away, and be close to cushion and solar cell layer sacrifice that layer segment is corroded slower.Such that it is able to reduce substrate and
Solar cell layer and the time of corrosive liquid directly contact, reduce infringement of the corrosive liquid to substrate and solar cell layer, it is ensured that
The recycling of substrate and the performance of solar battery product.
2. the solar battery epitaxial wafer that the present invention is provided, the thickness of the second sacrifice layer less than the first sacrifice layer thickness,
And the thickness less than 3rd sacrifice layer, so that the second sacrifice layer quickly can be corroded, and the second sacrifice layer and the 3rd
Sacrifice layer is then more slowly corroded.Further during the directly contact of minimizing substrate and solar cell layer and selective corrosion liquid
Between, preferably protect substrate and solar cell layer.
3. the solar battery epitaxial wafer that the present invention is provided, its combination sacrifice layer may include the sacrifice of five layers or more than five layers
Layer, and as intermediate layer the second sacrifice layer be corroded fastest, in other sacrifice layers the closer to the second sacrifice layer its
The speed that is corroded is faster, slower further away from its speed that is corroded of the second sacrifice layer, and arranges after suitable thickness for each layer, can
Reduce the time of substrate and solar cell layer and selective corrosion liquid directly contact further, so as to preferably protect them.
Description of the drawings
Fig. 1 is a kind of solar battery epitaxial wafer structural representation of one embodiment of the invention；
Fig. 2 is another kind of solar battery epitaxial wafer structural representation of one embodiment of the invention；
Fig. 3 is a kind of concrete structure schematic diagram of solar battery epitaxial wafer of one embodiment of the invention；
Fig. 4 is a kind of flow chart of the preparation method of solar battery epitaxial wafer of another embodiment of the present invention.
In figure reference is expressed as：1- substrate, 2- cushion, 3- combination sacrifice layer, the first sacrifice layer of 31-, 32- second
Sacrifice layer, 33- 3rd sacrifice layer, the 4th sacrifice layer of 34-, the 5th sacrifice layer of 35-, 4- solar cell layer, first ohm of 41- connect
Contact layer, 42- first window layer, 43- launch site, 44- base, 45- back surface field, the second Window layer of 46-, the second ohmic contact layer of 47-,
5- second buffer layer, 6- electrode.
Specific embodiment
In order that those skilled in the art more fully understand present disclosure, with reference to the accompanying drawings and examples to this
The there is provided technical scheme of invention is described in further detail.
Embodiment 1
As shown in figure 1, present embodiments provide a kind of solar battery epitaxial wafer, including set gradually substrate 1, buffering
Layer 2, combination sacrifice layer 3 and solar cell layer 4, combination sacrifice layer 3 include the first sacrifice layer 31, the second sacrifice layer 32 and the 3rd
Sacrifice layer 33, the first sacrifice layer 31 are close to cushion 2 and are arranged, and 3rd sacrifice layer 33 is close to solar cell layer 4 and is arranged, and second is sacrificial
Domestic animal layer 32 is arranged between the first sacrifice layer 31 and 3rd sacrifice layer 33, and the speed that is corroded of the second sacrifice layer 32 is faster than first
Sacrifice layer 31 and the speed that is corroded of 3rd sacrifice layer 33.
The solar battery epitaxial wafer that the present embodiment is provided, when extension stripping technology is carried out, away from cushion 2 and the sun
The sacrifice layer segment of energy battery layers 4 soon will be corroded, and be close to the sacrifice layer of cushion 2 and solar cell layer 4
It is slower that part is corroded.Therefore the time of substrate 1 and solar cell layer 4 and corrosive liquid directly contact can be reduced, so as to
Reduce infringement of the corrosive liquid to substrate 1 and solar cell layer 4, it is ensured that the recycling of substrate 1 and solar battery product
Performance.
As another preferred embodiment of the present embodiment, between the first sacrifice layer 31 and the second sacrifice layer 32 also
Including also including one layer of sacrifice layer, and the second sacrifice layer 32 between one layer of sacrifice layer, the second sacrifice layer 32 and 3rd sacrifice layer 33
For intermediate layer；The speed that is corroded of the sacrifice layer being arranged between the first sacrifice layer 31 and the second sacrifice layer 32 is faster than the first sacrifice
Layer 31 is waited a moment in the second sacrifice layer 32, the speed that is corroded of the sacrifice layer being arranged between the second sacrifice layer 32 and 3rd sacrifice layer 33
Degree is faster than 3rd sacrifice layer 33 and waits a moment in the second sacrifice layer 32.Specifically, as shown in Fig. 2 being located at the first sacrifice layer 31 and second
Between sacrifice layer 32 is the 4th sacrifice layer 34, and is the 5th sacrifice layer between the second sacrifice layer 32 and 3rd sacrifice layer 33
35.
In this preferred embodiment, its combination sacrifice layer 3 adopts five layers of sacrifice layer, and the speed that is corroded of five layers of sacrifice layer
All different, as intermediate layer the second sacrifice layer 32 be corroded fastest, in other sacrifice layers the closer to second sacrifice
Its speed that is corroded of layer 32 is faster, slower further away from its speed that is corroded of the second sacrifice layer 32, and arranges properly for each layer
Thickness after, the time of substrate 1 and solar cell layer 4 and selective corrosion liquid directly contact can be reduced further, so as to more
They are protected well.
In the present embodiment, the material of the first sacrifice layer 31 can be chosen as AlxGa1-xAs, the material of the second sacrifice layer 32
Expect for AlyGa1-yAs, the material of 3rd sacrifice layer 33 are AlzGa1-zAs, wherein, y>X, and y>z.Al atom in AlGaAs material
Shared ratio is bigger, and its speed that is corroded in the selective corrosion solution such as hydrofluoric acid is bigger.Therefore, the second sacrifice layer 32
The speed that is corroded be faster than other two-layers.In addition, sacrifice layer uses AlGaAs ternary compound material, on the one hand it is because
AlGaAs and GaAs have very high Lattice Matching, have preferably guarantee for extension tablet quality, be on the other hand AlGaAs and
GaAs has good selective corrosion ratio.Specifically, x be 0.5～0.6, y be 0.7～1, z be 0.5～0.6.
In addition, the material of the 4th sacrifice layer 34 between the first sacrifice layer 31 and the second sacrifice layer 32 is AlaGa1- aAs, the material of the 5th sacrifice layer 35 between the second sacrifice layer 32 and 3rd sacrifice layer 33 is AlbGa1-bAs, wherein x<a<
Y, y>b>z.
Used as further preferred embodiment, the thickness of the second sacrifice layer 32 can be chosen less than the first sacrifice layer 31
Thickness and the thickness less than 3rd sacrifice layer 33.The second relatively thin sacrifice layer 32 quickly can be corroded, and thicker
One sacrifice layer 31 and 3rd sacrifice layer 33 then more slowly can be corroded.Specifically, the thickness of the first sacrifice layer 31 is 0.2～3
Micron, the thickness of the second sacrifice layer 32 is 0.1～2 micron, and the thickness of 3rd sacrifice layer 33 is 0.2～3 micron.And, above-mentioned
The thickness of the 4th sacrifice layer 34 less than the first sacrifice layer 31 and is more than the second sacrifice layer 32, and the thickness of the 5th sacrifice layer 35 is less than the
Three sacrifice layers 33 and be more than the second sacrifice layer 32.The thickness of each layer sacrifice layer select to need to consider needed for epitaxial growth when
Between, material cost and carry out required time during extension stripping technology, selective corrosion liquid to substrate 1 and solar cell layer 4
Corrosion impact and other factors.The thickness of the whole combination sacrifice layer 3 too thick time that can extend needed for extension stripping technology,
Increase selective corrosion liquid to substrate 1 and the corrosion risk of solar cell layer 4.It is close to the first sacrifice layer 31 of substrate 1 and tight
If the thickness of the 3rd sacrifice layer 33 of patch solar cell layer 4 is too thin, the edge of substrate 1 and solar cell layer 4 still can
By a certain degree of pin-hole corrosion, it is impossible to which they are protected well；And if this two-layer sacrifice layer is thicker,
May result in substrate 1 and solar cell layer 4 is separated completes, but two sides also has sacrifice layer to remain, and is also easy to cause
First sacrifice layer 31 and 3rd sacrifice layer 33 form corrosive liquid passage after subregion is worn by selective corrosive liquid undercutting, so as to
Section substrate 1 and solar cell layer 4 is caused to be corroded damage.
Specifically, as shown in figure 3, the solar cell layer 4 in the present embodiment include successively the first ohmic contact layer 41,
One Window layer 42, launch site 43, base 44, back surface field 45, the second Window layer 46 and the second ohmic contact layer 47.First Ohmic contact
The material of layer 41 is GaAs, thickness is 50-300 nanometer, and the material of first window layer 42 is GaInP, thickness is 10-100 nanometer,
The material of launch site 43 is GaAs, the material of base 44 is GaAs, the material of back surface field 45 is GaInP, launch site 43,44 and of base
The gross thickness of back surface field 45 is 2-5 micron, and the material of the second Window layer 46 is GaInP, thickness is 10-100 nanometer, and second ohm connects
The material of contact layer 47 is GaAs, thickness is 50-300 nanometer.Solar cell layer 4 also includes second with combining between sacrifice layer 3
Cushion 5, the material of cushion 2 and second buffer layer 5 is GaAs and thickness is 100-900 nanometer.The solar cell
The upper surface of the second ohmic contact layer 47 of epitaxial wafer is additionally provided with electrode 6, the electrode 6 be by 30～150 nanometers of titanium and 50
The metal composite film that～500 nanometers of gold is constituted.
As the convertible embodiment of another kind of the present embodiment, also wrap between the first sacrifice layer 31 and the second sacrifice layer 32
Including between one layer of sacrifice layer, the second sacrifice layer 32 and 3rd sacrifice layer 33 also includes two-layer sacrifice layer.Now, the second sacrifice layer 32
With next-door neighbour the second sacrifice layer 32 and near 3rd sacrifice layer 33 that layer of sacrifice layer together as intermediate sacrificial layer.It is arranged at
One layer of sacrifice layer between one sacrifice layer 31 and the second sacrifice layer 32, its speed that is corroded are faster than the first sacrifice layer 31 and wait a moment in
Two sacrifice layers 32；It is arranged in the two-layer sacrifice layer between the second sacrifice layer 32 and 3rd sacrifice layer 33, is close to 3rd sacrifice layer
The speed that is corroded of 33 sacrifice layer is slower than the speed that is corroded of the sacrifice layer away from 3rd sacrifice layer 33.
Or, also include two-layer sacrifice layer, the second sacrifice layer 32 and between the first sacrifice layer 31 and the second sacrifice layer 32
Also include one layer of sacrifice layer between three sacrifice layers 33.Now, the second sacrifice layer 32 and the second sacrifice layer 32 of next-door neighbour and close first
That layer of sacrifice layer of sacrifice layer 31 is together as intermediate sacrificial layer.It is arranged between the first sacrifice layer 31 and the second sacrifice layer 32
Two-layer sacrifice layer in, be slower than the speed that is corroded against the second sacrifice layer 32 against the speed that is corroded of the first sacrifice layer 31；
The speed that is corroded of the sacrifice layer being arranged between the second sacrifice layer 32 and 3rd sacrifice layer 33 is slower than the second sacrifice layer 32 and fast
In 3rd sacrifice layer 33.
In the other embodiment of the present invention, other numbers of plies can be set between the first sacrifice layer 31 and the second sacrifice layer 32
Sacrifice layer, may also set up the sacrifice layer of other numbers of plies between the second sacrifice layer 32 and 3rd sacrifice layer 33, as long as second sacrifice
Layer 32 is to be located at all sacrifice layers positioned at middle sacrifice layer or together with another sacrifice layer for being close to the second sacrifice layer 32
Middle.From the corrosion rate incremented by successively of each layer of 31 to the second sacrifice layer 32 of the first sacrifice layer, from the second sacrifice layer 32 to
The corrosion rate of each layer of three sacrifice layers 33 is successively decreased successively.It is also possible that only the first sacrifice layer 31 and the second sacrifice layer 32 it
Between be provided with one layer of sacrifice layer, or only between the second sacrifice layer 32 and 3rd sacrifice layer 33, be provided with one layer of sacrifice layer, i.e.,
Combination sacrifice layer 3 only has 4 layers of sacrifice layer altogether, including the speed ratio that is corroded of the middle two-layer sacrifice layer of the second sacrifice layer 32
The speed that is corroded of one sacrifice layer 31 and 3rd sacrifice layer 33 is fast, and thickness is also than the first sacrifice layer 31 and 3rd sacrifice layer 33
Thickness is little.And middle two-layer sacrifice layer be corroded speed can equally can also be different, thickness equally can not also
Equally.First sacrifice layer 31 and 3rd sacrifice layer 33 be corroded speed can as can also be different, thickness can be equally
Can also be different.
In the convertible specific embodiment of each present invention above-mentioned, when each layer sacrifice layer is all using AlGaAs material,
The ratio incremented by successively shared by Al atom from the layers of material of 31 to the second sacrifice layer 32 of the first sacrifice layer, sacrifices from second
Ratio in the layers of material of layer 32 to 3rd sacrifice layer 33 shared by Al atom is successively decreased successively.Preferably, from the first sacrifice layer 31
Thickness to each layer of the second sacrifice layer 32 successively decreases successively, from the thickness of each layer of the second sacrifice layer 32 to 3rd sacrifice layer 33 according to
Secondary incremental.
Embodiment 2
As shown in figure 4, a kind of preparation method of solar battery epitaxial wafer is present embodiments provided, in order to make above-mentioned reality
The solar battery epitaxial wafer in example 1 is applied, is comprised the following steps：
S1：Epitaxial growth buffer 2 on substrate 1；
S2：The first sacrifice layer of epitaxial growth 31 on the buffer layer 2, the first sacrifice layer 31 are close to cushion 2；
S3：In 31 the second sacrifice layer of Epitaxial growth 32 of the first sacrifice layer, the speed that is corroded of the second sacrifice layer 32 is faster than
First sacrifice layer 31；
S4：In 32 Epitaxial growth 3rd sacrifice layer 33 of the second sacrifice layer, the speed that is corroded of 3rd sacrifice layer 33 is slower than
Second sacrifice layer 32；
S5：In 33 Epitaxial growth solar cell layer 4 of 3rd sacrifice layer, solar battery epitaxial wafer, the sun is produced
Energy battery layers 4 are close to 3rd sacrifice layer 33.
The solar cell extension being in above-described embodiment 1 that the preparation method provided using the present embodiment is produced
Piece, which sacrifices layer segment by eroding quickly away from substrate 1 and solar cell layer 4, and is close to substrate 1 and solar energy
It is slower that the sacrifice layer segment of battery layers 4 is corroded.Therefore substrate 1 can be reduced and solar cell layer 4 is direct with corrosive liquid
The time of contact, so as to reduce infringement of the corrosive liquid to substrate 1 and solar cell layer 4, it is ensured that the recycling of substrate 1 and too
The performance of sun energy battery.
In the present embodiment, the material of the first sacrifice layer 31 is preferably AlxGa1-xAs, the material of the second sacrifice layer 32 is
AlyGa1-yAs, the material of 3rd sacrifice layer 33 are AlzGa1-zAs, wherein, y>X, and y>z.In AlGaAs material shared by Al atom
Ratio bigger, its speed that is corroded in the selective corrosion solution such as hydrofluoric acid is bigger.Therefore, the quilt of the second sacrifice layer 32
Corrosion rate is faster than other two-layers.Specifically, x be 0.5～0.6, y be 0.7～1, z be 0.5～0.6.
Used as further preferred embodiment, the thickness of the second sacrifice layer 32 can be chosen less than the first sacrifice layer 31
Thickness and the thickness less than 3rd sacrifice layer 33.The second relatively thin sacrifice layer 32 quickly can be corroded, and thicker
One sacrifice layer 31 and 3rd sacrifice layer 33 then more slowly can be corroded.
As other preferred embodiments, in above-mentioned steps S3, also included before the second sacrifice layer of epitaxial growth 32
The process of the 4th sacrifice layer 34 of extension on the first sacrifice layer 31, then in 34 the second sacrifice layer of Epitaxial growth of the 4th sacrifice layer
32.In above-mentioned steps S4, before epitaxial growth 3rd sacrifice layer 33,32 Epitaxial growth the 5th of the second sacrifice layer is additionally included in
The process of sacrifice layer 35, then in 35 Epitaxial growth 3rd sacrifice layer 33 of the 5th sacrifice layer.During now the second sacrifice layer 32 is
Interbed.The speed that is corroded of the 4th sacrifice layer 34 is faster than the first sacrifice layer 31 and waits a moment in the second sacrifice layer 32, the 5th sacrifice layer 35
The speed that is corroded be faster than 3rd sacrifice layer 33 and wait a moment in the second sacrifice layer 32.In addition, the material of the 4th sacrifice layer 34 is
AlaGa1-aAs, the material of the 5th sacrifice layer 35 is AlbGa1-bAs, wherein x<a<Y, y>b>z.
As other convertible embodiments of the present embodiment, can extension between the first sacrifice layer 31 and the second sacrifice layer 32
Growth have between sacrifice layer, the second sacrifice layer 32 and the 3rd sacrifice layer 33 of other numbers of plies also can epitaxial growth have other numbers of plies
Sacrifice layer, if the second sacrifice layer 32 be positioned at that middle layer or with another sacrifice layer one for being close to the second sacrifice layer 32
Act the centre for being located at all sacrifice layers.From the corrosion rate incremented by successively of each layer of 31 to the second sacrifice layer 32 of the first sacrifice layer,
Successively decrease from the corrosion rate of each layer of the second sacrifice layer 32 to 3rd sacrifice layer 33 successively.When each layer sacrifice layer all adopts AlGaAs
During material, the ratio incremented by successively shared by Al atom from the layers of material of 31 to the second sacrifice layer 32 of the first sacrifice layer, from
Ratio in the layers of material of the second sacrifice layer 32 to 3rd sacrifice layer 33 shared by Al atom is successively decreased successively.
Between above-mentioned first sacrifice layer 31 and the second sacrifice layer 32, epitaxial growth has at least one sacrifice layer and second
Between sacrifice layer 32 and 3rd sacrifice layer 33, epitaxial growth has in the specific embodiment of at least one sacrifice layer, sacrifices from first
The thickness of each layer of 31 to the second sacrifice layer 32 of layer successively decreases successively, from the thickness of each layer of the second sacrifice layer 32 to 3rd sacrifice layer 33
Degree incremented by successively.
Obviously, above-described embodiment is only intended to clearly illustrate example, and the not restriction to embodiment.Right
For those of ordinary skill in the art, can also make on the basis of the above description other multi-forms change or
Change.There is no need to be exhaustive to all of embodiment.And the obvious change thus extended out or
Change among still in the protection domain of the invention.
Claims (8)
1. a kind of solar battery epitaxial wafer, it is characterised in that including set gradually substrate (1), cushion (2), combine sacrificial
Domestic animal layer (3) and solar cell layer (4), combination sacrifice layer (3) at least include the first sacrifice layer (31), the second sacrifice layer
(32) and 3rd sacrifice layer (33), the first sacrifice layer (31) are close to the cushion (2) setting, the 3rd sacrifice layer
(33) be close to the solar cell layer (4) setting, the second sacrifice layer (32) be arranged at the first sacrifice layer (31) with
Between 3rd sacrifice layer (33), and the speed that is corroded of second sacrifice layer (32) is faster than the first sacrifice layer (31)
The speed that is corroded with the 3rd sacrifice layer (33)；
Described second sacrifice layer (32) are intermediate layer, between the first sacrifice layer (31) and second sacrifice layer (32) at least
Also include between one layer of sacrifice layer, second sacrifice layer (32) and the 3rd sacrifice layer (33), at least also to include one layer of sacrifice
Layer；
The corrosion rate incremented by successively of each layer of from the first sacrifice layer (31) to the second sacrifice layer (32), from described the
The corrosion rate of each layer of two sacrifice layers (32) to 3rd sacrifice layer (33) is successively decreased successively.
2. solar battery epitaxial wafer as claimed in claim 1, it is characterised in that the material of the first sacrifice layer (31) is
AlxGa1-xAs, the material of the second sacrifice layer (32) is AlyGa1-yAs, the material of the 3rd sacrifice layer (33) are
AlzGa1-zAs, wherein, y>X, and y>z.
3. solar battery epitaxial wafer as claimed in claim 2, it is characterised in that the AlxGa1-xIn As, x is 0.5～0.6,
The AlyGa1-yIn As, y is 0.7～1, the AlzGa1-zIn As, z is 0.5～0.6.
4. solar battery epitaxial wafer as claimed in claim 2, it is characterised in that the first sacrifice layer (31) and described
The 4th sacrifice layer (34) is provided between two sacrifice layers (32), between the second sacrifice layer (32) and the 3rd sacrifice layer (33)
The 5th sacrifice layer (35) is provided with, the material of the 4th sacrifice layer (34) is AlaGa1-aAs, the material of the 5th sacrifice layer (35)
Expect for AlbGa1-bAs, wherein x<a<Y, y>b>z.
5. solar battery epitaxial wafer as claimed in claim 1, it is characterised in that the thickness of the second sacrifice layer (32) is little
Thickness in the first sacrifice layer (31) and the thickness less than 3rd sacrifice layer (33).
6. the solar battery epitaxial wafer as described in claim 1 or 5, it is characterised in that from the first sacrifice layer (31) extremely
The thickness of each layer of the second sacrifice layer (32) successively decreases successively, from the second sacrifice layer (32) to the 3rd sacrifice layer
(33) the thickness incremented by successively of each layer.
7. solar battery epitaxial wafer as claimed in claim 1, it is characterised in that solar cell layer (4) wrap successively
Include the first ohmic contact layer (41), first window layer (42), launch site (43), base (44), back surface field (45), the second Window layer
(46) and the second ohmic contact layer (47).
8. a kind of preparation method of solar battery epitaxial wafer, it is characterised in that comprise the following steps：
In substrate (1) Epitaxial growth cushion (2)；
In the first sacrifice layer of the cushion (2) Epitaxial growth (31), the first sacrifice layer (31) are close to the cushion
(2)；
In the first sacrifice layer (31) the second sacrifice layer of Epitaxial growth (32), the speed that is corroded of the second sacrifice layer (32)
Degree is faster than the first sacrifice layer (31)；
In the second sacrifice layer (32) Epitaxial growth 3rd sacrifice layer (33), the speed that is corroded of 3rd sacrifice layer (33)
Degree is slower than the second sacrifice layer (32)；
In the 3rd sacrifice layer (33) Epitaxial growth solar cell layer (4), solar battery epitaxial wafer is produced, described
Solar cell layer (4) is close to the 3rd sacrifice layer (33)；
Between first sacrifice layer (31) and second sacrifice layer (32), also epitaxial growth has at least one of which sacrifice layer, described
Between second sacrifice layer (32) and the 3rd sacrifice layer (33), also epitaxial growth has an at least one of which sacrifice layer, and described second sacrificial
Domestic animal layer (32) is intermediate layer；
The corrosion rate incremented by successively of each layer of from the first sacrifice layer (31) to the second sacrifice layer (32), from described the
The corrosion rate of each layer of two sacrifice layers (32) to 3rd sacrifice layer (33) is successively decreased successively.
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| CN112310230A (en) * | 2019-07-31 | 2021-02-02 | 东泰高科装备科技有限公司 | Solar cell |
| CN112864278A (en) * | 2021-01-21 | 2021-05-28 | 扬州乾照光电有限公司 | Solar cell and manufacturing method thereof |
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| KR101714812B1 (en) * | 2009-09-10 | 2017-03-22 | 더 리젠츠 오브 더 유니버시티 오브 미시간 | Methods of preparing flexible photovoltaic devices using epitaxial liftoff, and preserving the integrity of growth substrates used in epitaxial growth |
| JP5515770B2 (en) * | 2009-09-14 | 2014-06-11 | 住友電気工業株式会社 | Method of forming nitride semiconductor epitaxial layer and method of manufacturing nitride semiconductor device |
| US20130043214A1 (en) * | 2011-06-29 | 2013-02-21 | The Regents Of The University Of Michigan | Sacrificial etch protection layers for reuse of wafers after epitaxial lift off |
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