CN204991737U - Solar cell epitaxial wafer - Google Patents
Solar cell epitaxial wafer Download PDFInfo
- Publication number
- CN204991737U CN204991737U CN201520517528.6U CN201520517528U CN204991737U CN 204991737 U CN204991737 U CN 204991737U CN 201520517528 U CN201520517528 U CN 201520517528U CN 204991737 U CN204991737 U CN 204991737U
- Authority
- CN
- China
- Prior art keywords
- sacrifice layer
- layer
- sacrifice
- solar cell
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn - After Issue
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The utility model provides a solar cell epitaxial wafer, this solar cell epitaxial wafer is including the substrate that sets gradually, the buffer layer, combination sacrifice layer and solar cell layer, the combination sacrifice layer includes first sacrifice layer, second sacrifice layer and third sacrifice layer, the buffer layer setting is hugged closely to first sacrifice layer, the third sacrifice layer is hugged closely solar cell layer and is set up, the second sacrifice layer sets up between first sacrifice layer and third sacrifice layer, and the second sacrifice layer by the etch rate faster than first sacrifice layer and third sacrifice layer by the etch rate. The problem of the substrate that early sacrifice layer part of being corroded corresponds when utilize extending lift -off technology preparation solar cell among the prior art and solar cell layer because of for a long time and corrosive liquid direct contact lead to by the technique of slow corruption is solved. This epitaxial wafer can reduce the corrosive liquid and to substrate and solar cell layer's harm, guarantee the reuse of substrate and the performance of solar cell product.
Description
Technical field
The utility model relates to technical field of solar batteries.Specifically, a kind of solar battery epitaxial wafer is related to.
Background technology
Rapidly, application progressively expands to Ground Application, in portable energy source and consumer electronics field wide market from space application to the development of GaAs solar battery technology.Utilize extension lift-off technology (ELO technology) to make GaAs solar cell, can reuse after GaAs substrate desquamation on the one hand, significantly reduce product cost; On the other hand, can make flexible GaAs solar cell, not only efficiency increases before peeling off, and product quality is lighter and have flexibility, is more conducive to Aero-Space and portable use etc., of many uses.
The process utilizing extension lift-off technology to make GaAs solar cell in prior art is generally: first, utilizes growth technology to produce to have the solar battery epitaxial wafer of GaAs substrate, AlGaAs sacrifice layer and GaAs battery layers; Then, metal electrode is set at GaAs battery layers upper surface, and (such as use double faced adhesive tape, photoresist, cured etc.) is pasted in translate substrate (as very thin copper sheet, plastic film etc.) in the side being provided with metal electrode; Finally, by in the acid solution of its whole immersion selective corrosion, because acid solution is to the selective corrosion (as very large in the corrosion Selection radio of hydrofluoric acid to AlGaAs and GaAs) of AlGaAs sacrifice layer, GaAs substrate is finally made to be separated with GaAs battery layers.Can reuse through process after substrate is stripped, and on the GaAs battery structure stripped down, make metal gates and antireflective film etc. further, GaAs solar cell can be formed.
GaAs battery layers and the time needed for substrate separation depend on the corrosion speed of the acid solution of selective corrosion to sacrifice layer.Above-mentioned when utilizing extension lift-off technology to make solar cell, sacrifice layer be make on substrate a Rotating fields continuous print, thickness is uniform and x is the Al of determined value
xga
1-xas layer.Ideally, by the method for routine peel off a slice 4 inches GaAs hull cell need 3 ~ 6 hours even longer time.And under normal circumstances, after partial sacrificial layer is corroded, the GaAs battery layers of its corresponding region is just separated with substrate, the acid solution of then selective corrosion will separate rear other partial sacrificial layer of passage corrosion removal formed by GaAs battery layers and substrate.Therefore, GaAs battery layers corresponding to the sacrifice layer part be comparatively early corroded directly will contact until all sacrifice layers are corroded with the acid solution of selective corrosion with substrate (being generally the peripheral edge of solar battery epitaxial wafer), and namely extension stripping technology completes.Although, the corrosion Selection radio of the HF solution generally selected to AlGaAs (sacrifice layer) and GaAs (GaAs battery layers and substrate) is very large, but in production environment, other acids (hydrochloric acid, sulfuric acid, phosphoric acid etc.) material or impurity can be introduced unavoidably in HF solution, add the oxygen molecule dissolved in solution, the GaAs battery layers that the sacrifice layer part being easy to cause comparatively early being corroded is corresponding and substrate are corroded lentamente.Because its speed be corroded is comparatively slow, therefore this process is not easily monitored in real time, but behind several hours needed for whole stripping process, the surface of substrate and the release surface of GaAs battery layers will form some pin holes or similar defect.This for substrate recycle and the performance of solar battery product all can cause negative effect to a certain degree, even cause the overall yields of producing line to decline.
Utility model content
For this reason; when technical problem to be solved in the utility model is to utilize extension lift-off technology to make solar cell in prior art; substrate corresponding to the sacrifice layer part be comparatively early corroded causes slowly being corroded because directly contacting with corrosive liquid for a long time with solar cell layer; propose a kind ofly the sacrifice layer part away from substrate and solar cell layer can be made to be fallen by fast erosion and the solar battery epitaxial wafer that is corroded more slowly close to the sacrifice layer part of substrate and solar cell layer, thus protection substrate and solar cell layer.
For solving the problems of the technologies described above, the utility model provides following technical scheme:
A kind of solar battery epitaxial wafer, comprise the substrate, resilient coating, combination sacrifice layer and the solar cell layer that set gradually, combination sacrifice layer at least comprises the first sacrifice layer, the second sacrifice layer and the 3rd sacrifice layer, first sacrifice layer is close to resilient coating and is arranged, 3rd sacrifice layer is close to solar cell layer and is arranged, and the second sacrifice layer is arranged between the first sacrifice layer and the 3rd sacrifice layer.
Preferably, the second sacrifice layer is intermediate layer, at least also comprises one deck sacrifice layer, at least also comprises one deck sacrifice layer between the second sacrifice layer and the 3rd sacrifice layer between the first sacrifice layer and the second sacrifice layer.
Preferably, between the first sacrifice layer and the second sacrifice layer, be provided with the 4th sacrifice layer, between the second sacrifice layer and the 3rd sacrifice layer, be provided with the 5th sacrifice layer.
Preferably, successively decrease successively from the thickness of each layer of the first sacrifice layer to the second sacrifice layer, the thickness from the second sacrifice layer to each layer of the 3rd sacrifice layer increases progressively successively.
Preferably, the thickness of the first sacrifice layer is 0.2 ~ 3 micron, and the thickness of the second sacrifice layer is 0.1 ~ 2 micron, and the thickness of the 3rd sacrifice layer is 0.2 ~ 3 micron.
Preferably, solar cell layer comprises the first ohmic contact layer, first window layer, emitter region, base, back surface field, Second Window layer and the second ohmic contact layer successively.
Preferably, the thickness of the first ohmic contact layer is 50-300 nanometer, and the thickness of first window layer is 10-100 nanometer, and the gross thickness of emitter region, base and back surface field is 2-5 micron, the thickness of Second Window layer is 10-100 nanometer, and the thickness of the second ohmic contact layer is 50-300 nanometer.
Preferably, the upper surface of the second ohmic contact layer is also provided with electrode 6, and electrode is the metal composite film be made up of the gold of the titanium of 30 ~ 150 nanometer thickness and 50 ~ 500 nanometer thickness.
Preferably, also comprise the second resilient coating between solar cell layer and combination sacrifice layer, the thickness of resilient coating and the second resilient coating is 100-900 nanometer.
Preferably, increase progressively successively from the corrosion rate of each layer of the first sacrifice layer to the second sacrifice layer, the corrosion rate from the second sacrifice layer to each layer of the 3rd sacrifice layer is successively decreased successively.
Technique scheme of the present utility model has the following advantages compared to existing technology:
1. the solar battery epitaxial wafer that provides of the utility model, this solar battery epitaxial wafer at least comprises the first sacrifice layer, the second sacrifice layer and the 3rd sacrifice layer, first sacrifice layer is close to resilient coating and is arranged, the another side that substrate is close to resilient coating is arranged, 3rd sacrifice layer is close to solar cell layer and is arranged, and the second sacrifice layer is arranged between the first sacrifice layer and the 3rd sacrifice layer.When the speed that is corroded faster than the first sacrifice layer and the 3rd sacrifice layer of the speed that is corroded of the second sacrifice layer, the speed of being corroded of the sacrifice layer being namely close to resilient coating and the sacrifice layer of being close to solar cell layer is slower than the speed that is corroded of the sacrifice layer away from resilient coating and solar cell layer.Therefore, eroded by very fast away from the sacrifice layer part of resilient coating and solar cell layer in extension stripping technology, and that the sacrifice layer part being close to resilient coating and solar cell layer is corroded is slower.Thus the time that substrate directly contacts with solar cell layer and corrosive liquid can be reduced, reduce the infringement of corrosive liquid to substrate and solar cell layer, ensure the recycling of substrate and the performance of solar battery product.
2. the solar battery epitaxial wafer that provides of the utility model, the thickness of the second sacrifice layer is less than the thickness of the first sacrifice layer and is less than the thickness of the 3rd sacrifice layer, thus the second sacrifice layer can be corroded quickly, the second sacrifice layer and the 3rd sacrifice layer are then more slowly corroded.The direct time of contact of further minimizing substrate and solar cell layer and selective corrosion liquid, protect substrate and solar cell layer better.
Accompanying drawing explanation
Fig. 1 is a kind of solar battery epitaxial wafer structural representation of the utility model embodiment;
Fig. 2 is the another kind of solar battery epitaxial wafer structural representation of the utility model embodiment;
Fig. 3 is the concrete structure schematic diagram of a kind of solar battery epitaxial wafer of the utility model embodiment;
Fig. 4 is the flow chart of the manufacture method of a kind of solar battery epitaxial wafer of another embodiment of the utility model.
In figure, Reference numeral is expressed as: 1-substrate, 2-resilient coating, 3-combine sacrifice layer, 31-first sacrifice layer, 32-second sacrifice layer, 33-the 3rd sacrifice layer, 34-the 4th sacrifice layer, 35-the 5th sacrifice layer, 4-solar cell layer, 41-first ohmic contact layer, 42-first window layer, 43-emitter region, 44-base, 45-back surface field, 46-Second Window layer, 47-second ohmic contact layer, 5-second resilient coating, 6-electrode.
Embodiment
In order to make those skilled in the art person understand content of the present utility model better, below in conjunction with drawings and Examples, technical scheme provided by the utility model is described in further detail.
Embodiment 1
As shown in Figure 1, present embodiments provide a kind of solar battery epitaxial wafer, comprise the substrate 1, resilient coating 2, combination sacrifice layer 3 and the solar cell layer 4 that set gradually, combination sacrifice layer 3 comprises the first sacrifice layer 31, second sacrifice layer 32 and the 3rd sacrifice layer 33, first sacrifice layer 31 is close to resilient coating 2 and is arranged, 3rd sacrifice layer 33 is close to solar cell layer 4 and is arranged, and the second sacrifice layer 32 is arranged between the first sacrifice layer 31 and the 3rd sacrifice layer 33.
The solar battery epitaxial wafer that the present embodiment provides, when the speed that is corroded faster than the first sacrifice layer 31 and the 3rd sacrifice layer 33 of the speed that is corroded of the second sacrifice layer 32, when carrying out extension stripping technology, sacrifice layer part away from resilient coating 2 and solar cell layer 4 will be corroded soon, and that the sacrifice layer part being close to resilient coating 2 and solar cell layer 4 is corroded is slower.Therefore can reduce the time that substrate 1 directly contacts with solar cell layer 4 and corrosive liquid, thus reduce the infringement of corrosive liquid to substrate 1 and solar cell layer 4, ensure the recycling of substrate 1 and the performance of solar battery product.
As another preferred embodiment of the present embodiment, also comprise one deck sacrifice layer between the first sacrifice layer 31 and the second sacrifice layer 32, between the second sacrifice layer 32 and the 3rd sacrifice layer 33, also comprise one deck sacrifice layer, and the second sacrifice layer 32 is intermediate layer; The speed that is corroded being arranged at the sacrifice layer between the first sacrifice layer 31 and the second sacrifice layer 32 is waited a moment in the second sacrifice layer 32 faster than the first sacrifice layer 31, and the speed that is corroded being arranged at the sacrifice layer between the second sacrifice layer 32 and the 3rd sacrifice layer 33 is waited a moment in the second sacrifice layer 32 faster than the 3rd sacrifice layer 33.Particularly, as shown in Figure 2, being located between the first sacrifice layer 31 and the second sacrifice layer 32 is the 4th sacrifice layer 34, and being located between the second sacrifice layer 32 and the 3rd sacrifice layer 33 is the 5th sacrifice layer 35.
In this preferred embodiment, its combination sacrifice layer 3 adopts five layers of sacrifice layer; and the speed that is corroded of five layers of sacrifice layer is all different; as intermediate layer the second sacrifice layer 32 be corroded fastest; its speed its speed that is corroded sooner, more away from the second sacrifice layer 32 that is corroded the closer to the second sacrifice layer 32 in other sacrifice layers is slower; and be after each layer arranges suitable thickness; the time that substrate 1 directly contacts with selective corrosion liquid with solar cell layer 4 can be reduced further, thus protect them better.
In the present embodiment, the material of the first sacrifice layer 31 can be chosen as Al
xga
1-xas, the material of the second sacrifice layer 32 is Al
yga
1-ythe material of As, the 3rd sacrifice layer 33 is Al
zga
1-zas, wherein, y>x, and y>z.Ratio in AlGaAs material shared by Al atom is larger, and its speed that is corroded in the selective corrosion solution such as hydrofluoric acid is larger.Therefore, the speed that is corroded of the second sacrifice layer 32 is two-layer faster than other.In addition, sacrifice layer uses AlGaAs ternary compound material, and being because AlGaAs and GaAs has very high Lattice Matching on the one hand, having good guarantee for epitaxial wafer quality, is that AlGaAs and GaAs has good selective corrosion ratio on the other hand.Particularly, x is 0.5 ~ 0.6, y be 0.7 ~ 1, z is 0.5 ~ 0.6.
In addition, the material being located at the 4th sacrifice layer 34 between the first sacrifice layer 31 and the second sacrifice layer 32 is Al
aga
1-aas, the material being located at the 5th sacrifice layer 35 between the second sacrifice layer 32 and the 3rd sacrifice layer 33 is Al
bga
1-bas, wherein x<a<y, y>b>z.
As further preferred embodiment, the thickness of the second sacrifice layer 32 can be chosen as the thickness that is less than the first sacrifice layer 31 and be less than the thickness of the 3rd sacrifice layer 33.The second thinner sacrifice layer 32 can be corroded quickly, and the first thicker sacrifice layer 31 and the 3rd sacrifice layer 33 then can more slowly be corroded.Particularly, the thickness of the first sacrifice layer 31 is 0.2 ~ 3 micron, and the thickness of the second sacrifice layer 32 is 0.1 ~ 2 micron, and the thickness of the 3rd sacrifice layer 33 is 0.2 ~ 3 micron.And the thickness of above-mentioned 4th sacrifice layer 34 is less than the first sacrifice layer 31 and the thickness being greater than the second sacrifice layer the 32, five sacrifice layer 35 is less than the 3rd sacrifice layer 33 and is greater than the second sacrifice layer 32.Time required when the thickness of each layer sacrifice layer is selected to need to consider time needed for epitaxial growth, material cost and carries out extension stripping technology, selective corrosion liquid are to the corrosion impact of substrate 1 and solar cell layer 4 and other factors.The thickness of whole combination sacrifice layer 3 is too thick can extend time needed for extension stripping technology, increase the corrosion risk of selective corrosion liquid to substrate 1 and solar cell layer 4.The first sacrifice layer 31 being close to substrate 1 is too thin with the thickness of the 3rd sacrifice layer 33 being close to solar cell layer 4, and the edge of substrate 1 and solar cell layer 4 still by pin-hole corrosion to a certain extent, well can not can be protected them; And if this two-layer sacrifice layer is thicker, substrate 1 may be caused to be separated with solar cell layer 4 complete, but two sides also has sacrifice layer to remain, also easily cause the first sacrifice layer 31 and the 3rd sacrifice layer 33 to form corrosive liquid passage after subregion is worn by the undercutting of selectivity corrosive liquid, thus cause section substrate 1 and solar cell layer 4 to be corroded damage.
Particularly, as shown in Figure 3, the solar cell layer 4 in the present embodiment comprises the first ohmic contact layer 41, first window layer 42, emitter region 43, base 44, back surface field 45, Second Window layer 46 and the second ohmic contact layer 47 successively.The material of the first ohmic contact layer 41 is GaAs, thickness is 50-300 nanometer, the material of first window layer 42 is GaInP, thickness is 10-100 nanometer, the material of emitter region 43 is GaAs, the material of base 44 is GaAs, the material of back surface field 45 is GaInP, the gross thickness of emitter region 43, base 44 and back surface field 45 is 2-5 micron, the material of Second Window layer 46 is GaInP, thickness is 10-100 nanometer, and the material of the second ohmic contact layer 47 is GaAs, thickness is 50-300 nanometer.Also comprise the second resilient coating 5 between solar cell layer 4 and combination sacrifice layer 3, the material of resilient coating 2 and the second resilient coating 5 is GaAs and thickness is 100-900 nanometer.The upper surface of the second ohmic contact layer 47 of this solar battery epitaxial wafer is also provided with electrode 6, and this electrode 6 is the metal composite films be made up of the gold of the titanium of 30 ~ 150 nanometer thickness and 50 ~ 500 nanometer thickness.
The convertible execution mode of another kind as the present embodiment, also comprises one deck sacrifice layer between the first sacrifice layer 31 and the second sacrifice layer 32, also comprises two-layer sacrifice layer between the second sacrifice layer 32 and the 3rd sacrifice layer 33.Now, the second sacrifice layer 32 is with next-door neighbour second sacrifice layer 32 and as intermediate sacrificial layer together with that one deck sacrifice layer of close 3rd sacrifice layer 33.Be arranged at one deck sacrifice layer between the first sacrifice layer 31 and the second sacrifice layer 32, its speed that is corroded is waited a moment in the second sacrifice layer 32 faster than the first sacrifice layer 31; Be arranged in the two-layer sacrifice layer between the second sacrifice layer 32 and the 3rd sacrifice layer 33, the speed of being corroded close to the sacrifice layer of the 3rd sacrifice layer 33 is slower than the speed that is corroded of the sacrifice layer away from the 3rd sacrifice layer 33.
Or, also comprise two-layer sacrifice layer between the first sacrifice layer 31 and the second sacrifice layer 32, between the second sacrifice layer 32 and the 3rd sacrifice layer 33, also comprise one deck sacrifice layer.Now, the second sacrifice layer 32 is with next-door neighbour second sacrifice layer 32 and as intermediate sacrificial layer together with that one deck sacrifice layer of close first sacrifice layer 31.Be arranged in the two-layer sacrifice layer between the first sacrifice layer 31 and the second sacrifice layer 32, the speed of being corroded near the first sacrifice layer 31 is slower than the speed that is corroded near the second sacrifice layer 32; The speed of being corroded being arranged at the sacrifice layer between the second sacrifice layer 32 and the 3rd sacrifice layer 33 is slower than the second sacrifice layer 32 and faster than the 3rd sacrifice layer 33.
In other execution modes of the present utility model, the sacrifice layer of other numbers of plies can be set between the first sacrifice layer 31 and the second sacrifice layer 32, the sacrifice layer of other numbers of plies also can be set between the second sacrifice layer 32 and the 3rd sacrifice layer 33, as long as the second sacrifice layer 32 is the centres being positioned at middle sacrifice layer or being positioned at all sacrifice layers together with another sacrifice layer being close to the second sacrifice layer 32.Increase progressively successively from the corrosion rate of each layer of the first sacrifice layer 31 to the second sacrifice layer 32, the corrosion rate from the second sacrifice layer 32 to each layer of the 3rd sacrifice layer 33 is successively decreased successively.Can also be, only have between the first sacrifice layer 31 and the second sacrifice layer 32 and be provided with one deck sacrifice layer, or only have between the second sacrifice layer 32 and the 3rd sacrifice layer 33 and be provided with one deck sacrifice layer, namely combine sacrifice layer 3 and altogether only have 4 layers of sacrifice layer, the speed that is corroded comprising be corroded speed ratio first sacrifice layer 31 and the 3rd sacrifice layer 33 of the two-layer sacrifice layer in centre of the second sacrifice layer 32 is fast, and thickness is also little than the thickness of the first sacrifice layer 31 and the 3rd sacrifice layer 33.And the speed of being corroded of middle two-layer sacrifice layer can the same also can be different, thickness can the same also can be different.The speed of being corroded of the first sacrifice layer 31 and the 3rd sacrifice layer 33 can the same also can be different, thickness can the same also can be different.
In each convertible embodiment of the present utility model above-mentioned, when each layer sacrifice layer all adopts AlGaAs material, increase progressively successively from the ratio shared by the Al atom the layers of material of the first sacrifice layer 31 to the second sacrifice layer 32, successively decrease successively from the second sacrifice layer 32 to the ratio shared by Al atom the layers of material of the 3rd sacrifice layer 33.Preferably, successively decrease successively from the thickness of each layer of the first sacrifice layer 31 to the second sacrifice layer 32, the thickness from the second sacrifice layer 32 to each layer of the 3rd sacrifice layer 33 increases progressively successively.
Embodiment 2
As shown in Figure 4, present embodiments provide a kind of manufacture method of solar battery epitaxial wafer, in order to make the solar battery epitaxial wafer in above-described embodiment 1, comprise the following steps:
S1: epitaxial growth buffer 2 on substrate 1;
S2: epitaxial growth first sacrifice layer 31, first sacrifice layer 31 is close to resilient coating 2 on the buffer layer 2;
S3: in the speed that is corroded of the first sacrifice layer 31 Epitaxial growth second sacrifice layer 32, second sacrifice layer 32 faster than the first sacrifice layer 31;
S4: be slower than the second sacrifice layer 32 in the speed of being corroded of the second sacrifice layer 32 Epitaxial growth the 3rd sacrifice layer the 33, three sacrifice layer 33;
S5: at the 3rd sacrifice layer 33 Epitaxial growth solar cell layer 4, produce solar battery epitaxial wafer, solar cell layer 4 is close to the 3rd sacrifice layer 33.
The solar battery epitaxial wafer that what the manufacture method utilizing the present embodiment to provide was produced be in above-described embodiment 1, its sacrifice layer part away from substrate 1 and solar cell layer 4 is eroded by very fast, and that the sacrifice layer part being close to substrate 1 and solar cell layer 4 is corroded is slower.Therefore can reduce the time that substrate 1 directly contacts with solar cell layer 4 and corrosive liquid, thus reduce the infringement of corrosive liquid to substrate 1 and solar cell layer 4, ensure the recycling of substrate 1 and the performance of solar cell.
In the present embodiment, the material of the first sacrifice layer 31 is preferably Al
xga
1-xas, the material of the second sacrifice layer 32 is Al
yga
1-ythe material of As, the 3rd sacrifice layer 33 is Al
zga
1-zas, wherein, y>x, and y>z.Ratio in AlGaAs material shared by Al atom is larger, and its speed that is corroded in the selective corrosion solution such as hydrofluoric acid is larger.Therefore, the speed that is corroded of the second sacrifice layer 32 is two-layer faster than other.Particularly, x is 0.5 ~ 0.6, y be 0.7 ~ 1, z is 0.5 ~ 0.6.
As further preferred embodiment, the thickness of the second sacrifice layer 32 can be chosen as the thickness that is less than the first sacrifice layer 31 and be less than the thickness of the 3rd sacrifice layer 33.The second thinner sacrifice layer 32 can be corroded quickly, and the first thicker sacrifice layer 31 and the 3rd sacrifice layer 33 then can more slowly be corroded.
As other preferred embodiments, in above-mentioned steps S3, before epitaxial growth second sacrifice layer 32, be also included in the process of extension the 4th sacrifice layer 34 on the first sacrifice layer 31, then at the 4th sacrifice layer 34 Epitaxial growth second sacrifice layer 32.In above-mentioned steps S4, before epitaxial growth the 3rd sacrifice layer 33, be also included in the process of the second sacrifice layer 32 Epitaxial growth the 5th sacrifice layer 35, then at the 5th sacrifice layer 35 Epitaxial growth the 3rd sacrifice layer 33.Now the second sacrifice layer 32 is intermediate layer.The speed that is corroded of the 4th sacrifice layer 34 is waited a moment in the speed that is corroded of the second sacrifice layer the 32, five sacrifice layer 35 faster than the first sacrifice layer 31 and is waited a moment in the second sacrifice layer 32 faster than the 3rd sacrifice layer 33.In addition, the material of the 4th sacrifice layer 34 is Al
aga
1-aas, the material of the 5th sacrifice layer 35 is Al
bga
1-bas, wherein x<a<y, y>b>z.
As other convertible execution modes of the present embodiment, epitaxial growth can have the sacrifice layer of other numbers of plies, between the second sacrifice layer 32 and the 3rd sacrifice layer 33, also epitaxial growth can have the sacrifice layer of other numbers of plies between first sacrifice layer 31 and the second sacrifice layer 32, as long as the second sacrifice layer 32 is the centres being positioned at that middle one deck or being positioned at all sacrifice layers together with another sacrifice layer being close to the second sacrifice layer 32.Increase progressively successively from the corrosion rate of each layer of the first sacrifice layer 31 to the second sacrifice layer 32, the corrosion rate from the second sacrifice layer 32 to each layer of the 3rd sacrifice layer 33 is successively decreased successively.When each layer sacrifice layer all adopts AlGaAs material, increase progressively successively from the ratio shared by the Al atom the layers of material of the first sacrifice layer 31 to the second sacrifice layer 32, successively decrease successively from the second sacrifice layer 32 to the ratio shared by Al atom the layers of material of the 3rd sacrifice layer 33.
Between above-mentioned first sacrifice layer 31 and the second sacrifice layer 32, epitaxial growth has at least one sacrifice layer and epitaxial growth has in the embodiment of at least one sacrifice layer between the second sacrifice layer 32 and the 3rd sacrifice layer 33, successively decrease successively from the thickness of each layer of the first sacrifice layer 31 to the second sacrifice layer 32, the thickness from the second sacrifice layer 32 to each layer of the 3rd sacrifice layer 33 increases progressively successively.
Obviously, above-described embodiment is only for clearly example being described, and the restriction not to execution mode.For those of ordinary skill in the field, can also make other changes in different forms on the basis of the above description.Here exhaustive without the need to also giving all execution modes.And thus the apparent change of extending out or variation be still among the protection range of the invention.
Claims (10)
1. a solar battery epitaxial wafer, it is characterized in that, comprise the substrate (1) set gradually, resilient coating (2), combination sacrifice layer (3) and solar cell layer (4), described combination sacrifice layer (3) at least comprises the first sacrifice layer (31), second sacrifice layer (32) and the 3rd sacrifice layer (33), described first sacrifice layer (31) is close to described resilient coating (2) and is arranged, described 3rd sacrifice layer (33) is close to described solar cell layer (4) and is arranged, described second sacrifice layer (32) is arranged between described first sacrifice layer (31) and described 3rd sacrifice layer (33).
2. solar battery epitaxial wafer as claimed in claim 1, it is characterized in that, described second sacrifice layer (32) is intermediate layer, at least also comprises one deck sacrifice layer, at least also comprises one deck sacrifice layer between described second sacrifice layer (32) and described 3rd sacrifice layer (33) between described first sacrifice layer (31) and described second sacrifice layer (32).
3. solar battery epitaxial wafer as claimed in claim 2, it is characterized in that, be provided with the 4th sacrifice layer (34) between described first sacrifice layer (31) and described second sacrifice layer (32), between described second sacrifice layer (32) and described 3rd sacrifice layer (33), be provided with the 5th sacrifice layer (35).
4. solar battery epitaxial wafer as claimed in claim 2, it is characterized in that, successively decrease successively from described first sacrifice layer (31) to the thickness of each layer of described second sacrifice layer (32), increase progressively successively from described second sacrifice layer (32) to the thickness of each layer of described 3rd sacrifice layer (33).
5. the solar battery epitaxial wafer according to any one of claim 1-4, it is characterized in that, the thickness of described first sacrifice layer (31) is 0.2 ~ 3 micron, the thickness of described second sacrifice layer (32) is 0.1 ~ 2 micron, and the thickness of described 3rd sacrifice layer (33) is 0.2 ~ 3 micron.
6. the solar battery epitaxial wafer according to any one of claim 1-4, it is characterized in that, described solar cell layer (4) comprises the first ohmic contact layer (41), first window layer (42), emitter region (43), base (44), back surface field (45), Second Window layer (46) and the second ohmic contact layer (47) successively.
7. solar battery epitaxial wafer as claimed in claim 6, it is characterized in that, the thickness of described first ohmic contact layer (41) is 50-300 nanometer, the thickness of described first window layer (42) is 10-100 nanometer, the gross thickness of described emitter region (43), described base (44) and described back surface field (45) is 2-5 micron, the thickness of described Second Window layer (46) is 10-100 nanometer, and the thickness of described second ohmic contact layer (47) is 50-300 nanometer.
8. solar battery epitaxial wafer as claimed in claim 6, it is characterized in that, the upper surface of described second ohmic contact layer (47) is also provided with electrode (6), and described electrode (6) is the metal composite film be made up of the gold of the titanium of 30 ~ 150 nanometer thickness and 50 ~ 500 nanometer thickness.
9. solar battery epitaxial wafer as claimed in claim 1, it is characterized in that, also comprise the second resilient coating (5) between described solar cell layer (4) and described combination sacrifice layer (3), described resilient coating (2) is 100-900 nanometer with the thickness of described second resilient coating (5).
10. solar battery epitaxial wafer as claimed in claim 2, it is characterized in that, increase progressively successively from described first sacrifice layer (31) to the corrosion rate of each layer of described second sacrifice layer (32), successively decrease successively from described second sacrifice layer (32) to the corrosion rate of each layer of described 3rd sacrifice layer (33).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520517528.6U CN204991737U (en) | 2015-07-16 | 2015-07-16 | Solar cell epitaxial wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520517528.6U CN204991737U (en) | 2015-07-16 | 2015-07-16 | Solar cell epitaxial wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204991737U true CN204991737U (en) | 2016-01-20 |
Family
ID=55126072
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520517528.6U Withdrawn - After Issue CN204991737U (en) | 2015-07-16 | 2015-07-16 | Solar cell epitaxial wafer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204991737U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104993003A (en) * | 2015-07-16 | 2015-10-21 | 苏州强明光电有限公司 | Solar cell epitaxial wafer and manufacturing method thereof |
| CN112310230A (en) * | 2019-07-31 | 2021-02-02 | 东泰高科装备科技有限公司 | Solar cell |
| CN114188427A (en) * | 2021-12-06 | 2022-03-15 | 扬州乾照光电有限公司 | Solar cell and manufacturing method thereof |
-
2015
- 2015-07-16 CN CN201520517528.6U patent/CN204991737U/en not_active Withdrawn - After Issue
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104993003A (en) * | 2015-07-16 | 2015-10-21 | 苏州强明光电有限公司 | Solar cell epitaxial wafer and manufacturing method thereof |
| CN112310230A (en) * | 2019-07-31 | 2021-02-02 | 东泰高科装备科技有限公司 | Solar cell |
| CN114188427A (en) * | 2021-12-06 | 2022-03-15 | 扬州乾照光电有限公司 | Solar cell and manufacturing method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN204991737U (en) | Solar cell epitaxial wafer | |
| CN102157623B (en) | Stripping transfer method of substrate of thin film solar cell | |
| AU2006276661B2 (en) | Method for manufacturing photoelectric conversion element and the photoelectric conversion element | |
| CN104617195B (en) | A kind of near-infrared luminous diode and its production method | |
| CN104993003A (en) | Solar cell epitaxial wafer and manufacturing method thereof | |
| US20130000708A1 (en) | Multijunction Photovoltaic Cell Fabrication | |
| CN103345337A (en) | Flexible touch screen and preparation method thereof | |
| CN104347359B (en) | A kind of efficient substrate desquamation method | |
| KR101163154B1 (en) | Method for fabricating high efficiency flexible compound semiconductor thin film solar cell with chalcopyrite system | |
| CN116759498B (en) | Red light micro LED chip and manufacturing method thereof | |
| CN105140318A (en) | Solar cell epitaxial wafer and manufacturing method thereof | |
| CN104979412B (en) | Solar battery epitaxial wafer and its preparation method | |
| CN102790098B (en) | Back reflective solar battery and manufacturing method thereof | |
| JP4245135B2 (en) | Thin film solar cell manufacturing method | |
| CN204905266U (en) | Solar cell epitaxial wafer | |
| US8623669B2 (en) | Method of fabricating epitaxial semiconductor devices | |
| CN113036002B (en) | Solar cell preparation method | |
| CN204243024U (en) | The peelable epitaxial structure of substrate, solar cell and light emitting diode epitaxial structure | |
| CN104241205B (en) | Epitaxial structure with strippable substrate and application of epitaxial structure | |
| CN204927302U (en) | Solar cell epitaxial wafer | |
| CN105428427B (en) | The substrate protective structure and processing technology of thin film gallium arsenide solar cell substrate multiplexing | |
| KR101935267B1 (en) | Fabrication method for ultrathin silicon substrate | |
| TWI408830B (en) | Manufacturing method of light emitting element | |
| CN101635250A (en) | Substrate structuring body and removing method thereof | |
| CN104993011A (en) | Technology for preparing thin-film solar cells by use of selective corrosion substrate stripping technology |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20160120 Effective date of abandoning: 20171114 |