CN204927302U - Solar cell epitaxial wafer - Google Patents
Solar cell epitaxial wafer Download PDFInfo
- Publication number
- CN204927302U CN204927302U CN201520458731.0U CN201520458731U CN204927302U CN 204927302 U CN204927302 U CN 204927302U CN 201520458731 U CN201520458731 U CN 201520458731U CN 204927302 U CN204927302 U CN 204927302U
- Authority
- CN
- China
- Prior art keywords
- sacrifice layer
- layer
- epitaxial wafer
- hole
- solar cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn - After Issue
Links
Abstract
The utility model provides a solar cell epitaxial wafer, this solar cell epitaxial wafer of includes: the substrate, buffer layer, sacrifice layer and the solar cell layer that set gradually, wherein, the sacrifice layer includes first sacrifice layer and second sacrifice layer, the buffer layer setting is hugged closely to first sacrifice layer, first sacrifice layer setting is hugged closely to the second sacrifice layer, first sacrifice layer by the etch rate be greater than the second sacrifice layer by the etch rate, it has a plurality of strip connected in stars that are parallel to each other to distribute on first sacrifice layer, it is protruding to have the bar that a plurality of and strip connected in star closely cooperated on the second sacrifice layer. The problem of the corrosive liquid technique of corroding the sacrifice layer with predictable direction not and different speed is solved. The time of stripping technology can be reduced, the damage of peeling off in -process substrate and solar cell layer can also be reduced to improve the quality of solar cell product and the yields of producing the line.
Description
Technical field
The utility model relates to technical field of solar batteries.Specifically, a kind of solar battery epitaxial wafer is related to.
Background technology
Rapidly, application progressively expands to Ground Application, in portable energy source and consumer electronics field wide market from space application to the development of GaAs solar battery technology.Utilize extension lift-off technology (ELO technology) to make GaAs solar cell, can reuse after GaAs substrate desquamation on the one hand, significantly reduce product cost; On the other hand, can make flexible GaAs solar cell, not only efficiency increases before peeling off, and product quality is lighter and have flexibility, is more conducive to Aero-Space and portable use etc., of many uses.
The process utilizing extension lift-off technology to make GaAs solar cell in prior art is generally: first, utilizes growth technology to produce to have the solar battery epitaxial wafer of GaAs substrate, AlGaAs sacrifice layer and GaAs battery layers; Then, metal electrode is set at GaAs battery layers upper surface, and (such as use double faced adhesive tape, photoresist, cured etc.) is pasted in translate substrate (as very thin copper sheet, plastic film etc.) in the side being provided with metal electrode; Finally, by in the acid solution of its whole immersion selective corrosion, because acid solution is to the selective corrosion (acid solution, as very large in the corrosion Selection radio of hydrofluoric acid to AlGaAs and GaAs) of AlGaAs sacrifice layer, GaAs substrate is finally made to be separated with GaAs battery layers.Can reuse through process after substrate is stripped, and on the GaAs battery structure stripped down, make metal gates and antireflective film etc. further, GaAs solar cell can be formed.
Above-mentioned when utilizing extension lift-off technology to make solar cell, sacrifice layer be make on gaas substrates one deck continuous print, thickness is uniform and x is the Al of determined value
xga
1-xas layer.Therefore, in existing extension lift-off technology technique, ideally, the corrosion of acid solution to sacrifice layer erodes to center gradually from periphery.Under actual conditions, due to epitaxial growth (deposition) technique, metal electrode manufacture craft, each side factor such as colloid used when pasting translate substrate, can produce uneven stress everywhere at solar battery epitaxial wafer.In stripping process, under the influence of stress, the corrosion of acid solution to sacrifice layer presents the different situation of corrosion rate everywhere.This situation can cause: 1, acid solution internally corrodes in subregion comparatively fast (acid solution is deeply inner along this irregular passage), and some areas corrosion is slower.The corrosion gas that area produces faster is easily accumulated between substrate and GaAs battery layers not easily discharges, and hinders the further corrosion of acid solution to sacrifice layer and hinders acid solution supplementing to etch chemistries reaction front in other words; 2, the gas produced can not be discharged in time, also easily cause oxygen contained in gas and GaAs battery layers or substrate to react, cause the substrate defects (substrate secondary is utilized and has impact) that battery layers is damaged (oxygen and GaAs reaction can cause GaAs more easily to be corroded by acid solution) or not easily repaired; 3, gas build, produces certain pressure in inside, and serious situation can damage GaAs battery layers or substrate.
Utility model content
For this reason, when technical problem to be solved in the utility model is to utilize extension lift-off technology to make solar cell in prior art, its sacrifice layer corrosion rate is everywhere inconsistent and uncontrollable, easily cause the damage of battery layers and substrate, thus the corrosion rate proposing a kind of sacrifice layer is very fast along a direction and solar battery epitaxial wafer that its vertical direction is slower.
For solving the problems of the technologies described above, the utility model provides following technical scheme:
A kind of solar battery epitaxial wafer, comprise the substrate, resilient coating, sacrifice layer and the solar cell layer that set gradually, sacrifice layer at least comprises the first sacrifice layer and the second sacrifice layer, first sacrifice layer is close to resilient coating and is arranged, second sacrifice layer is close to the first sacrifice layer and is arranged, and the speed of being corroded of the first sacrifice layer is greater than the speed that is corroded of the second sacrifice layer;
First sacrifice layer is distributed with multiple strip groove be parallel to each other, the second sacrifice layer has multiple strip bulge close-fitting with strip groove; And/or,
First sacrifice layer is distributed with multiple hole, and hole is positioned on many straight lines being parallel to each other, and the distance between adjacent two holes be located along the same line is less than 0.5 millimeter, the second sacrifice layer has multiple projection close-fitting with hole.
Preferably:
The offside of substrate has two trimmings be parallel to each other;
Strip groove is perpendicular to two trimmings of substrate;
The linear vertical at place, hole is in two trimmings of substrate.
Preferably, the width of strip groove is 0.5 ~ 2 millimeter, and hole is circular hole, and its internal diameter is 0.5 ~ 2 millimeter.
Preferably, the spacing of adjacent two strip grooves is 5 ~ 20 millimeters, and the distance between adjacent two parallel lines at place, hole is 5 ~ 20 millimeters.
Preferably, the gross thickness of the first sacrifice layer and the second sacrifice layer is 0.5 ~ 8 micron, and the Thickness Ratio of the first sacrifice layer and the second sacrifice layer is 3 ~ 5:1.
Preferably, strip groove longitudinal section is the square or trapezoidal of upper opening or arc or U-shaped, and hole is cylindrical, cuboid, taper shape, pyramid, truncated cone-shaped or prismatic table shape.
Technique scheme of the present utility model has the following advantages compared to existing technology:
The solar battery epitaxial wafer that the utility model provides, by arranging the first sacrifice layer and the second sacrifice layer, and the speed of being corroded of the first sacrifice layer is greater than the speed that is corroded of the second sacrifice layer, and multiple strip groove be parallel to each other is set on the first sacrifice layer, the multiple strip bulge of relative set on second sacrifice layer, or multiple hole be positioned on many straight lines being parallel to each other is set on the first sacrifice layer, and the distance between adjacent two holes be located on the same line is less than 0.5 millimeter, the multiple projection of relative set on the second sacrifice layer, the multiple strip groove be parallel to each other also or is simultaneously set on the first sacrifice layer and is positioned at the multiple holes on many straight lines being parallel to each other, and the straight line parallel at strip groove and place, hole, make two-layer sacrifice layer slow along the speed that is corroded in strip groove direction and the speed that is corroded in its vertical direction.Selective corrosion liquid can be effectively suppressed to occur with the situation of uncertain direction and different speed corrosion sacrificial layer.The stripping process that direction is controlled, speed is adjustable contributes to corrosive liquid supplementing with the time reducing stripping technology to corrosion reaction forward position, the gas that can also prevent corrosion reaction from producing and substrate, solar cell layer react the damage causing substrate and solar cell layer, and the pressure that produces because of the accumulation of gas between substrate and solar cell layer can be prevented the damage of solar cell layer and substrate, thus improve the quality of solar battery product and produce the yields of line.
Accompanying drawing explanation
Fig. 1 is the structural representation of a kind of solar battery epitaxial wafer of the utility model embodiment;
Fig. 2 is the structural representation of the first sacrifice layer of the utility model embodiment;
Fig. 3 is the structural representation of solar battery epitaxial wafer after the partial sacrificial layer of the utility model embodiment is corroded.
Fig. 4 is the structural representation of a kind of variant embodiment of the first sacrifice layer in the utility model embodiment;
Fig. 5 is the structural representation of the another kind of variant embodiment of the first sacrifice layer in the utility model embodiment;
Fig. 6 is the concrete structure schematic diagram of a kind of solar battery epitaxial wafer in the utility model embodiment;
Fig. 7 is the flow chart of the manufacture method of a kind of solar battery epitaxial wafer in the utility model embodiment.
In figure, Reference numeral is expressed as: 1-substrate, 11-trimming, 2-resilient coating, 3-sacrifice layer, 31-first sacrifice layer, 311-strip groove, 312-hole, 32-second sacrifice layer, 321-strip bulge, 322-projection, 4-solar cell layer, 41-first ohmic contact layer, 42-first window layer, 43-emitter region, 44-base, 45-back surface field, 46-Second Window layer, 47-second ohmic contact layer, 5-second resilient coating, 6-electrode.
Embodiment
In order to make those skilled in the art person understand content of the present utility model better, below in conjunction with drawings and Examples, technical scheme provided by the utility model is described in further detail.
As illustrated in fig. 1 and 2, present embodiments provide a kind of solar battery epitaxial wafer, comprise the substrate 1 set gradually, resilient coating 2, sacrifice layer 3 and solar cell layer 4, wherein, sacrifice layer 3 comprises the first sacrifice layer 31 and the second sacrifice layer 32, first sacrifice layer 31 is close to resilient coating 2 and is arranged, second sacrifice layer 32 is close to the first sacrifice layer 31 and is arranged, the speed of being corroded of the first sacrifice layer 31 is greater than the speed that is corroded of the second sacrifice layer 32, first sacrifice layer 31 is distributed with multiple strip groove 311 be parallel to each other, second sacrifice layer 32 have multiple strip bulge 321 close-fitting with strip groove 311.Fig. 2 is part or all of to cutaway view of the A-A of solar battery epitaxial wafer shown in Fig. 1, and wherein, in strip groove 311, the strip bulge 321 of the second sacrifice layer 32 in intercalation.
The solar battery epitaxial wafer that the present embodiment provides is by arranging two-layer sacrifice layer, i.e. the first sacrifice layer 31 and the second sacrifice layer 32, and the speed of being corroded of the first sacrifice layer 31 is greater than the speed that is corroded of the second sacrifice layer 32, and the multiple strip bulge 321 of relative set on multiple strip groove 311, second sacrifice layer 32 be parallel to each other is set on the first sacrifice layer 31, make two-layer sacrifice layer slow along the speed that is corroded in strip groove 311 direction (i.e. Y-direction) and the speed that is corroded in its vertical direction (i.e. X-direction).Because, when being eroded rapidly along first sacrifice layer 31 edge in strip groove 311 direction (i.e. Y-direction), because the strip bulge 321 of slow second sacrifice layer 32 that is corroded in intercalation in strip groove 311, thus drag the be corroded speed of slow sacrifice layer 3 in this direction (i.e. Y-direction).And all right slowing down corrosion liquid of strip bulge 321 the supplementing to reaction front of the second sacrifice layer 32 that intercalation, can drag the be corroded speed of slow sacrifice layer 3 in this direction (i.e. Y-direction) further in the first sacrifice layer 31.And on the direction (i.e. X-direction) vertical with strip groove 311 bearing of trend, the overwhelming majority is the first sacrifice layer 31 of speed of being corroded, and, as shown in Figure 3, under the effect of stress of the stress in solar battery epitaxial wafer inside or outside applying, solar cell layer 4 corresponding to sacrifice layer 3 part be corroded can tilt gradually, namely substrate 1 and solar cell layer 4 meeting shape are at an angle, thus be conducive to the timely discharge of reacting the gas produced, and corrosive liquid is to the flowing in corrosion reaction forward position, corrosive liquid can be supplemented in time to ensure the speed that is corroded of the sacrifice layer 3 on this direction (i.e. X-direction).The sacrifice layer 3 of this solar battery epitaxial wafer is greater than the speed that is corroded on the direction (Y-direction) vertical with this direction when being corroded by selectivity corrosive liquid along the speed of being corroded of a direction (X-direction), namely to be greater than the separating rate in its vertical direction (i.e. Y-direction) along the upper substrate 1 of a direction (i.e. X-direction) with the separating rate of solar cell layer 4, can effectively to suppress selective corrosion liquid with the situation appearance of uncertain direction and different speed corrosion sacrificial layer 3.The stripping process that direction is controlled, speed is adjustable contributes to corrosive liquid supplementing with the time reducing stripping technology to corrosion reaction forward position, can also prevent produced gas and substrate 1, solar cell layer 4 from reacting the damage causing substrate 1 and solar cell layer 4, and the pressure that produces because of the accumulation of gas between substrate 1 and solar cell layer 4 can be prevented the damage of solar cell layer 4 and substrate 1, thus improve the quality of solar battery product and produce the yields of line.
Above-mentioned strip groove 311 can be through whole sacrifice layer 3, also can be that the edge of two ends distance sacrifice layer 3 has some distances.Above-mentioned strip groove 311 can be with the end, and the first sacrifice layer 31 now in strip groove 311 contacts with the top of the strip bulge 321 of the second sacrifice layer 32; Strip groove 311 also can be do not have with the end, and the top of the strip bulge 321 namely on the second sacrifice layer 32 contacts with resilient coating 2 through the first sacrifice layer 31.
Particularly, the material of above-mentioned first sacrifice layer 31 is Al
xga
1-xas, the material of the second sacrifice layer 32 is Al
yga
1-yas, and x>y.Because as x>y, selective corrosion liquid, if hydrofluoric acid is to Al
xga
1-xthe corrosion rate of As is greater than Al
yga
1-ythe corrosion rate of As.Al
xga
1-xx in As material can be 0.7 ~ 1, Al
yga
1-yy in As material can be 0.6 ~ 0.7.Preferably, Al
xga
1-xx in As material can be 0.8 ~ 0.95, Al
yga
1-yy in As material can be 0.61 ~ 0.68.Further preferably, Al
xga
1-xx in As material can be 0.9, Al
yga
1-yy in As material can be 0.65.
Particularly, substrate 1 preferably offside has two trimmings be parallel to each other 11, and strip groove 311 is perpendicular to two trimmings 11 of substrate 1.Two trimmings 11 on substrate 1 can be convenient to add the identification in man-hour with fixing.
Particularly, the width of strip groove 311 is 0.5 ~ 2 millimeter.Accordingly, the width of the strip bulge 321 coordinated with strip groove 311 on the second sacrifice layer 32 is also 0.5 ~ 2 millimeter, and preferably, the width of strip groove 311 can be 1 ~ 1.6 millimeter, and correspondingly, the width of strip bulge 321 is also 1 ~ 1.6 millimeter.Further preferably, the width of strip groove 311 can be 1.5 millimeters, and the width of strip bulge 321 is also 1.5 millimeters.The concrete width of strip groove 311 can be selected according to the corrosion rate of actual etching process, if but too narrow meeting makes the corrosion rate difference in the orthogonal both direction of sacrifice layer 3 not obvious, if too wide, the overall time of the stripping technology of this solar battery epitaxial wafer can be made to increase.
Particularly, the spacing of adjacent two strip grooves 311 is 5 ~ 20 millimeters.Preferably, the distance between adjacent two strip grooves 311 is 8 ~ 16 millimeters.Further preferably, the distance between adjacent two strip grooves 311 is 9 ~ 12 millimeters.Particularly, the distance between adjacent two strip grooves 311 is 10 millimeters.Distance between adjacent two strip grooves 311 also can be arranged according to actual needs, if but apart from excessive, not having the effect of the speed that is corroded controlled in mutual vertical both direction, the first sacrifice layer 31 between adjacent two strip grooves 311 also there will be the speed form irregular passage and insert into the inner portion thus cause bad peel results of being corroded of subregion.And if the too narrow overall time increase that also can cause the stripping technology of this solar battery epitaxial wafer.
Particularly, the gross thickness of the first sacrifice layer 31 and the second sacrifice layer 32 is 0.5 ~ 8 micron, and the Thickness Ratio of the first sacrifice layer 31 and the second sacrifice layer 32 is 3 ~ 5:1.The thickness of the first sacrifice layer 31 can be 0.4 ~ 6.4 micron, and the thickness of the second sacrifice layer 32 can be 0.1 ~ 1.6 micron.The first sacrifice layer 31 in this thickness range and the second sacrifice layer 32 not only can make the entirety of sacrifice layer 3 time that is corroded shorter, and can protect solar cell layer 4 and substrate 1 preferably.Preferably, the gross thickness of above-mentioned first sacrifice layer 31 and the second sacrifice layer 32 is 1 ~ 7.5 micron, and the Thickness Ratio of the first sacrifice layer 31 and the second sacrifice layer 32 is 4:1.The thickness of the first sacrifice layer 31 can be 0.7 ~ 6 micron, and the thickness of the second sacrifice layer 32 can be 0.3 ~ 2 micron.
Particularly, strip groove 311 longitudinal section is the square or trapezoidal of upper opening or arc or U-shaped or other are irregularly shaped.
As the variant embodiment of the present embodiment, as shown in Figure 4, also can arrange linearly aligned multiple hole 312 on the first sacrifice layer 31, this some holes 312 is positioned on many straight lines being parallel to each other, the second sacrifice layer 32 has multiple with this some holes 312 close-fitting protruding 322.As long as the distance between adjacent two holes 312 be located along the same line is less, such as be less than 0.5 millimeter, also the distance between adjacent two projections 322 namely the second sacrifice layer 32 is located along the same line is less, the function that the strip bulge 321 that also can realize above-mentioned embedding strip groove 311 realizes, namely makes sacrifice layer 3 fast with the speed that is corroded on this linear vertical direction (X-direction) slowly along the speed that is corroded at place, hole 312 rectilinear direction (Y-direction) when being corroded by selectivity corrosive liquid.Preferably, the distance between above-mentioned adjacent two holes 312 be located along the same line is less than 0.4 millimeter; Further preferably, the distance between above-mentioned adjacent two holes 312 be located along the same line is less than 0.3 millimeter, specifically can be 0.2 millimeter or 0.1 millimeter.Wherein, this some holes 312 the first sacrifice layer 31 arranged can be through hole also can be blind hole.
As optimal way, the linear vertical at place, hole 312 is in two trimmings 11 of substrate 1.
Particularly, when the first sacrifice layer 31 is arranged be hole 312 and this hole 312 for circular hole time, its internal diameter specifically can be 0.5 ~ 2 millimeter.Accordingly, the external diameter of the projection 322 coordinated with hole 312 is also 0.5 ~ 2 millimeter.Preferably, the internal diameter in hole 312 can be 1 ~ 1.6 millimeter, and correspondingly, the external diameter of protruding 322 is also 1 ~ 1.6 millimeter.Further preferably, the internal diameter in hole 312 can be 1.5 millimeters, and correspondingly, the external diameter of protruding 322 is also 1.5 millimeters.
Particularly, the distance between adjacent two parallel lines at place, hole 312 is 5 ~ 20 millimeters.Preferably, the distance between adjacent two parallel lines at place, hole 312 is 8 ~ 16 millimeters.Further preferably, the distance between adjacent two parallel lines at place, hole 312 is 9 ~ 12 millimeters.Particularly, the distance between adjacent two parallel lines at place, hole 312 is 10 millimeters.
Particularly, hole 312 is cylindrical, cuboid, taper shape, pyramid, truncated cone-shaped or prismatic table shape, also can be that other are irregularly shaped.
As another variant embodiment of the present embodiment, as shown in Figure 5, above-mentioned first sacrifice layer 31 can also be provided with multiple shorter strip groove 311, the plurality of shorter strip groove 311 is also be positioned on many straight lines being parallel to each other, and the strip groove 311 be located on the same line is arranged in order and distance between adjacent two strip grooves 311 is less than 5 millimeters.Be positioned at the edge of shorter strip groove 311 near sacrifice layer 3 edge or direct through sacrifice layer 3 very near apart from sacrifice layer 3 edge.Or above-mentioned first sacrifice layer 31 also can be provided with strip groove 311 and hole 312, and multiple strip groove 311 is parallel to each other simultaneously, multiple hole 312 is positioned on many straight lines being parallel to each other.Further, the straight line at place, hole 312 also must be parallel with strip groove 311, thus ensure that the speed of being corroded of sacrifice layer 3 is slow along the direction (i.e. Y-direction) of strip groove 311, and perpendicular direction (i.e. X-direction) is upper than very fast.In addition, shorter strip groove 311 can also be disposed on same straight line with hole 312.
It sacrifice layer 3 can also be arranged the structure that other and said structure are similar, as long as can make sacrifice layer 3 along the speed that is corroded in a direction faster than perpendicular direction.
Particularly, as shown in Figure 6, solar cell layer 4 comprises the first ohmic contact layer 41, first window layer 42, emitter region 43, base 44, back surface field 45, Second Window layer 46 and the second ohmic contact layer 47 successively.The material of the first ohmic contact layer 41 is GaAs, thickness is 50-300 nanometer, the material of first window layer 42 is GaInP, thickness is 10-100 nanometer, the material of emitter region 43 is GaAs, the material of base 44 is GaAs, the material of back surface field 45 is GaInP, the gross thickness of emitter region 43, base 44 and back surface field 45 is 2-5 micron, the material of Second Window layer 46 is GaInP, thickness is 10-100 nanometer, and the material of the second ohmic contact layer 47 is GaAs, thickness is 50-300 nanometer.Also comprise the second resilient coating 5 between solar cell layer 4 and sacrifice layer 3, the material of resilient coating 2 and the second resilient coating 5 is GaAs and thickness is 100-900 nanometer.The upper surface of the second ohmic contact layer 47 of this solar battery epitaxial wafer is also provided with electrode 6, and this electrode 6 is the metal composite films be made up of the gold of the titanium of 30 ~ 150 nanometers and 50 ~ 500 nanometers.
As shown in Figure 7, for making the manufacture method of the solar battery epitaxial wafer that the present embodiment provides, comprise the following steps:
S1: epitaxial growth buffer 2 on substrate 1, specifically can adopt metallo-organic compound Chemical Vapor-Phase Epitaxy technology (MOCVD).This metallo-organic compound Chemical Vapor-Phase Epitaxy technology is the growth technology making the most ripe best results at present for III-V solar cell, in addition also can the slow molecular beam epitaxy technique of growth selection (MBE).
S2: epitaxial growth first sacrifice layer 31 on the buffer layer 2, specifically can adopt metallo-organic compound Chemical Vapor-Phase Epitaxy technology (MOCVD).
S3: produce multiple strip groove 311 be parallel to each other on the first sacrifice layer 31, or, the first sacrifice layer 31 produces the multiple holes 312 on many straight lines be parallel to each other and distance between adjacent two holes 312 be located on the same line is less than 0.5 millimeter.Also can produce the multiple strip grooves 311 be parallel to each other simultaneously and be positioned at the multiple holes 312 on many straight lines being parallel to each other on the first sacrifice layer 31, and the straight line parallel at strip groove 311 and place, hole 312.Particularly, what making strip groove 311 and hole 312 adopted is dry etch process, and it is effective and etched features is accurate; Also can adopt photoetching and wet corrosion technique, wet etching cost is low, and it is convenient to implement.
S4: at the first sacrifice layer 31 Epitaxial growth second sacrifice layer 32, specifically can adopt metallo-organic compound Chemical Vapor-Phase Epitaxy technology (MOCVD), second sacrifice layer 32 is close to the first sacrifice layer 31, and the second sacrifice layer 32 is formed and the close-fitting strip bulge 321 of strip groove 311 on the first sacrifice layer 31.When the first sacrifice layer 31 makes porose 312, the second sacrifice layer 32 also can be formed close-fitting protruding 322, first sacrifice layer 31 speed of being corroded with hole 312 and be greater than the speed that is corroded of the second sacrifice layer 32.
S5: produce solar battery epitaxial wafer at the second sacrifice layer 32 Epitaxial growth solar cell layer 4, specifically can adopt metallo-organic compound Chemical Vapor-Phase Epitaxy technology (MOCVD).
This utilizes extension lift-off technology to make in the method for solar battery epitaxial wafer, by arranging the first sacrifice layer 31 and the second sacrifice layer 32, and the speed of being corroded of the first sacrifice layer 31 is greater than the speed that is corroded of the second sacrifice layer 32, and multiple strip groove 311 be parallel to each other is set on the first sacrifice layer 31, the multiple strip bulge 321 of relative set on second sacrifice layer 32, or on the first sacrifice layer 31, produce the multiple holes 312 on many straight lines be parallel to each other and distance between adjacent two holes 312 be located on the same line is less than 0.5 millimeter, and on the second sacrifice layer 32 relative set multiple protruding 322, also on the first sacrifice layer 31, or simultaneously produce multiple strip grooves 311 of being parallel to each other and be positioned at the multiple holes 312 on many straight lines being parallel to each other, and the straight line parallel at strip groove 311 and place, hole 312, make two-layer sacrifice layer slow along the speed that is corroded in strip groove 311 direction (i.e. Y-direction) and the speed that is corroded in its vertical direction (i.e. X-direction).Selective corrosion liquid can be effectively suppressed to occur with the situation of uncertain direction and different speed corrosion sacrificial layer 3.The stripping process that direction is controlled, speed is adjustable contributes to corrosive liquid supplementing with the time reducing stripping technology to corrosion reaction forward position, the gas that can also prevent corrosion reaction from producing and substrate 1, solar cell layer 4 react the damage causing substrate 1 and solar cell layer 4, and the pressure that produces because of the accumulation of gas between substrate 1 and solar cell layer 4 can be prevented the damage of solar cell layer 4 and substrate 1, thus improve the quality of solar battery product and produce the yields of line.
After producing above-mentioned solar battery epitaxial wafer, first, solar cell layer 4 is produced electrode 6, the making of electrode 6 specifically can adopt electron beam evaporation or sputtering method, preferred employing electron beam evaporation method, it can carry out evaporation coating to refractory metal, has good directivity, and film forming thickness and pattern have certain advantage.Then, solar cell layer 4 upper surface being provided with electrode 6 is pasted in other thin carrier (as very thin copper sheet, plastic film etc.).Finally, optionally erode the first sacrifice layer 31 and the second sacrifice layer 32 solar cell layer 4 and substrate 1 to be separated, thus produce solar cell.
Obviously, above-described embodiment is only for clearly example being described, and the restriction not to execution mode.For those of ordinary skill in the field, can also make other changes in different forms on the basis of the above description.Here exhaustive without the need to also giving all execution modes.And thus the apparent change of extending out or variation be still among the protection range of the invention.
Claims (6)
1. a solar battery epitaxial wafer, comprise the substrate (1) set gradually, resilient coating (2), sacrifice layer (3) and solar cell layer (4), it is characterized in that, described sacrifice layer (3) at least comprises the first sacrifice layer (31) and the second sacrifice layer (32), described first sacrifice layer (31) is close to described resilient coating (2) and is arranged, described second sacrifice layer (32) is close to the setting of described first sacrifice layer (31), the speed of being corroded of described first sacrifice layer (31) is greater than the speed that is corroded of described second sacrifice layer (32),
Described first sacrifice layer (31) is distributed with multiple strip groove (311) be parallel to each other, described second sacrifice layer (32) has the close-fitting strip bulge of multiple and described strip groove (311) (321); And/or,
Described first sacrifice layer (31) is distributed with multiple hole (312), described hole (312) is positioned on many straight lines being parallel to each other, distance between adjacent two the described holes (312) be located along the same line is less than 0.5 millimeter, and described second sacrifice layer (32) has the close-fitting projection of multiple and described hole (312) (322).
2. solar battery epitaxial wafer as claimed in claim 1, is characterized in that:
The offside of described substrate (1) has two trimmings be parallel to each other (11);
Described strip groove (311) is perpendicular to two trimmings (11) of described substrate (1);
The linear vertical at described hole (312) place is in two trimmings (11) of described substrate (1).
3. solar battery epitaxial wafer as claimed in claim 1, it is characterized in that, the width of described strip groove (311) is 0.5 ~ 2 millimeter, and described hole (312) are circular hole, and its internal diameter is 0.5 ~ 2 millimeter.
4. solar battery epitaxial wafer as claimed in claim 1, it is characterized in that, the spacing of adjacent two described strip grooves (311) is 5 ~ 20 millimeters, and the distance between adjacent two parallel lines at described hole (312) place is 5 ~ 20 millimeters.
5. the solar battery epitaxial wafer according to any one of claim 1-4, it is characterized in that, the gross thickness of described first sacrifice layer (31) and described second sacrifice layer (32) is 0.5 ~ 8 micron, and the Thickness Ratio of described first sacrifice layer (31) and described second sacrifice layer (32) is 3 ~ 5:1.
6. solar battery epitaxial wafer as claimed in claim 5, it is characterized in that, described strip groove (311) longitudinal section is the square or trapezoidal of upper opening or arc or U-shaped, and described hole (312) are cylindrical, cuboid, taper shape, pyramid, truncated cone-shaped or prismatic table shape.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520458731.0U CN204927302U (en) | 2015-06-30 | 2015-06-30 | Solar cell epitaxial wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520458731.0U CN204927302U (en) | 2015-06-30 | 2015-06-30 | Solar cell epitaxial wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204927302U true CN204927302U (en) | 2015-12-30 |
Family
ID=54976407
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520458731.0U Withdrawn - After Issue CN204927302U (en) | 2015-06-30 | 2015-06-30 | Solar cell epitaxial wafer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204927302U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105140318A (en) * | 2015-06-30 | 2015-12-09 | 苏州强明光电有限公司 | Solar cell epitaxial wafer and manufacturing method thereof |
-
2015
- 2015-06-30 CN CN201520458731.0U patent/CN204927302U/en not_active Withdrawn - After Issue
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105140318A (en) * | 2015-06-30 | 2015-12-09 | 苏州强明光电有限公司 | Solar cell epitaxial wafer and manufacturing method thereof |
| CN105140318B (en) * | 2015-06-30 | 2017-05-17 | 苏州强明光电有限公司 | solar cell epitaxial wafer and manufacturing method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110551973B (en) | Vapor deposition mask | |
| AU2006276661B2 (en) | Method for manufacturing photoelectric conversion element and the photoelectric conversion element | |
| TWI511308B (en) | Method and apparatus for making a solar panel that is partially transparent | |
| CN105140318A (en) | Solar cell epitaxial wafer and manufacturing method thereof | |
| US11038188B2 (en) | Manufacturing device and manufacturing method of fuel cell component | |
| JP6631897B2 (en) | Manufacturing method of evaporation mask and evaporation mask | |
| CN204927302U (en) | Solar cell epitaxial wafer | |
| WO2016178370A1 (en) | Thin-film electronic device manufacturing method | |
| CN102723405B (en) | Method for preparing double-faced growth efficient wide-spectrum absorption multi-junction solar cell | |
| CN112563878A (en) | Thermally tuned semiconductor chip and preparation method thereof | |
| CN104979412A (en) | Solar cell epitaxial wafer and manufacturing method thereof | |
| JP6221585B2 (en) | Vapor deposition mask and method of manufacturing vapor deposition mask | |
| CN204905266U (en) | Solar cell epitaxial wafer | |
| CN103296155B (en) | A kind of manufacture method of thin-film LED epitaxial chip | |
| WO2020042493A1 (en) | Semiconductor chip and method for manufacturing same | |
| CN204991737U (en) | Solar cell epitaxial wafer | |
| CN104388994A (en) | Method for reducing galvanized coating figure distortion | |
| CN104993003B (en) | A kind of solar battery epitaxial wafer and preparation method thereof | |
| CN113272467B (en) | Mask plate | |
| JP2012062542A (en) | Vacuum deposition device, method of manufacturing substrate and solar battery | |
| KR102374538B1 (en) | Manufacturing method of functional gdl for fuel cell and functional gdl manufactured using them | |
| CN107086187B (en) | Etching apparatus, etching method, and flexible film etched by the etching method | |
| CN207320078U (en) | A kind of graphite boat for placing solar cell in the horizontal direction | |
| CN106025000A (en) | Handling method for epitaxy defect | |
| CN104943320B (en) | A kind of applying method of substrate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20151230 Effective date of abandoning: 20170517 |