CN104979412A - Solar cell epitaxial wafer and manufacturing method thereof - Google Patents
Solar cell epitaxial wafer and manufacturing method thereof Download PDFInfo
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- CN104979412A CN104979412A CN201510395891.XA CN201510395891A CN104979412A CN 104979412 A CN104979412 A CN 104979412A CN 201510395891 A CN201510395891 A CN 201510395891A CN 104979412 A CN104979412 A CN 104979412A
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- 238000000576 coating method Methods 0.000 claims description 41
- 238000005260 corrosion Methods 0.000 claims description 33
- 230000007797 corrosion Effects 0.000 claims description 33
- 239000007788 liquid Substances 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 19
- 238000001259 photo etching Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 abstract description 4
- 238000000407 epitaxy Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 24
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 21
- 239000000126 substance Substances 0.000 description 5
- 238000000927 vapour-phase epitaxy Methods 0.000 description 5
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- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 239000002985 plastic film Substances 0.000 description 2
- 229920006255 plastic film Polymers 0.000 description 2
- 239000011265 semifinished product Substances 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a solar cell epitaxial wafer and a manufacturing method thereof. The solar cell epitaxial wafer comprises a substrate, a buffer layer, sacrificial layers and a solar cell layer, wherein the substrate, the buffer layer, the sacrificial layers and the solar cell layer are sequentially disposed. The sacrificial layers comprise a first sacrificial layer and a second sacrificial layer. The first sacrificial layer is arranged to cling to the buffer layer. The second sacrificial layer is arranged to cling to the first sacrificial layer. The first sacrificial layer is provided with a plurality of grooves. The second sacrificial layer is provided with a plurality of projections matched with the grooves. The projections are internally provided with gaps that extend along the length direction of the grooves. By means of the plurality of gaps in the sacrificial layers, when the solar cell epitaxial wafer is immersed in a selective etching solution, the selective etching solution can enter the interior of the solar cell epitaxial wafer through the edges of the sacrificial layers via the above gaps. In this way, the etching speeds of the sacrificial layers are accelerated. Therefore, the duration of the epitaxy lift-off step during the manufacturing process of solar cells is reduced.
Description
Technical field
The present invention relates to technical field of solar batteries.Specifically, a kind of solar battery epitaxial wafer and its manufacture method is related to.
Background technology
Rapidly, application progressively expands to Ground Application, in portable energy source and consumer electronics field wide market from space application to the development of GaAs solar battery technology.Utilize extension lift-off technology (ELO technology) to make GaAs solar cell, can reuse after GaAs substrate desquamation on the one hand, significantly reduce product cost; On the other hand, can make flexible GaAs solar cell, not only efficiency increases before peeling off, and product quality is lighter and have flexibility, is more conducive to Aero-Space and portable use etc., of many uses.
The process utilizing extension lift-off technology to make GaAs solar cell in prior art is generally: first, utilizes growth technology to produce to have the solar battery epitaxial wafer of GaAs substrate, AlGaAs sacrifice layer and GaAs battery layers; Then, metal electrode is set at GaAs battery layers upper surface, and (such as use double faced adhesive tape, photoresist, cured etc.) is pasted in translate substrate (as very thin copper sheet, plastic film etc.) in the side being provided with metal electrode; Finally, by in the acid solution of its whole immersion selective corrosion, because acid solution is to the selective corrosion (as very large in the corrosion Selection radio of hydrofluoric acid to AlGaAs and GaAs) of AlGaAs sacrifice layer, GaAs substrate is finally made to be separated with GaAs battery layers.Can reuse through process after substrate is stripped, and on the GaAs battery structure stripped down, make metal gates and antireflective film etc. further, GaAs solar cell can be formed.
GaAs battery layers and the time needed for substrate separation depend on the corrosion speed of the acid solution of selective corrosion to sacrifice layer.Above-mentioned when utilizing extension lift-off technology to make solar cell, sacrifice layer be make on substrate a Rotating fields continuous print, thickness is uniform and x is the Al of determined value
xga
1-xas layer.Ideally, by the method for routine peel off a slice 4 inches GaAs hull cell need 3 ~ 6 hours even longer time.And during actual stripping, the gas that corrosion reaction produces, easily at substrate and GaAs battery buildup between layers, hinders acid solution to supplement to reaction front, peeling rate can be reduced further.
Summary of the invention
For this reason, when technical problem to be solved by this invention is to utilize extension lift-off technology to make solar cell in prior art, the speed that is corroded of sacrifice layer is slow, thus proposes a kind of solar battery epitaxial wafer that can peel off fast and its manufacture method.
For solving the problems of the technologies described above, the invention provides following technical scheme:
A kind of solar battery epitaxial wafer, comprise the substrate, resilient coating, sacrifice layer and the solar cell layer that set gradually, sacrifice layer at least comprises the first sacrifice layer and the second sacrifice layer, first sacrifice layer is close to resilient coating and is arranged, second sacrifice layer is close to the first sacrifice layer and is arranged, and the first sacrifice layer is distributed with many grooves, the second sacrifice layer has projection that is multiple and groove fit, and there is in projection the space that the length direction along groove extends, be provided for the inside that corrosive liquid flows into sacrifice layer.
Preferably, many grooves be distributed on the first sacrifice layer are arranged in parallel, and space is also correspondingly arranged in parallel.
Preferably, the width of groove is 1 ~ 2 micron, and the spacing of adjacent two grooves is 1 ~ 4 micron.
Preferably, the bottom of groove extends downwardly on resilient coating, and be also provided with at resilient coating and align and the resilient coating groove be communicated with the groove on the first sacrifice layer, the degree of depth of resilient coating groove is 1 ~ 2 micron.
Preferably, the width in space reduces from the top of projection gradually to the second sacrifice layer direction.
Preferably, the longitudinal section in space is triangular in shape or trapezoidal.
Preferably, the height in space is 1 ~ 10 micron, and the thickness of resilient coating is 2 ~ 4 microns, and the thickness of the first sacrifice layer is 0.5 ~ 1.5 micron, and the gross thickness of the first sacrifice layer and the second sacrifice layer is 4 ~ 8 microns.
Preferably, the material of the first sacrifice layer and the second sacrifice layer is Al
xga
1-xas, and x is 0.6 ~ 1.
A manufacture method for solar battery epitaxial wafer, comprises the following steps:
At substrate Epitaxial growth resilient coating;
Epitaxial growth first sacrifice layer on the buffer layer;
First sacrifice layer etches many grooves;
At the first sacrifice layer Epitaxial growth second sacrifice layer, the second sacrifice layer is close to the first sacrifice layer, and the second sacrifice layer is formed and the projection of groove fit, and protruding in form the space that the length direction along groove extends;
Solar battery epitaxial wafer is produced at the second sacrifice layer Epitaxial growth solar cell layer.
Preferably, what the first sacrifice layer etched many grooves utilizations is dry etch process, or utilization is photoetching and wet corrosion technique.
Technique scheme of the present invention has the following advantages compared to existing technology:
The solar battery epitaxial wafer that the present embodiment provides and its manufacture method, multiple spaces of horizontal-extending are set in the sacrifice layer of solar battery epitaxial wafer, when being immersed selective corrosion liquid, selective corrosion liquid enters its inside by this space from the edge of sacrifice layer, accelerate the speed that is corroded of sacrifice layer, thus decrease the time in solar cell manufacturing process needed for extension stripping technology.And when the firm performance of this body structure of sacrifice layer meets the manufacture craft of solar cell, the volume needing the sacrifice layer be corroded can be reduced in the space arranged in the inner, thus further shorten the time of extension stripping technology.The space be arranged on sacrifice layer can also contribute to the timely discharge of the gas that corrosion reaction produces, not only can prevent because the accumulation of gas is to the obstruction of corrosion reaction, the pressure that produces because of gas buildup can also be prevented the infringement of solar cell layer and substrate.In addition, decrease being corroded the time of sacrifice layer, just can reduce solar cell layer and the time of substrate in corrosive liquid, reduce the risk that its liquid that is corroded damages, thus improve the quality of solar battery product, also improve and produce line yields.
Accompanying drawing explanation
Fig. 1 is the structural representation of a kind of solar battery epitaxial wafer of the embodiment of the present invention 1;
Fig. 2 is that the A-A of solar battery epitaxial wafer shown in Fig. 1 is to cutaway view;
Fig. 3 is the distribution schematic diagram of space on sacrifice layer in the embodiment of the present invention 1;
Fig. 4 is the structural representation of the another kind of solar battery epitaxial wafer of the embodiment of the present invention 1;
Fig. 5 is the concrete structure schematic diagram of a kind of solar battery epitaxial wafer in the embodiment of the present invention 1;
Fig. 6 is the solar battery epitaxial wafer manufacture method flow chart in the embodiment of the present invention 2;
Fig. 7 is the solar battery epitaxial wafer semi-finished product structure schematic diagram in the embodiment of the present invention 2;
Fig. 8 is the solar battery epitaxial wafer semi-finished product structure schematic diagram having etched groove on the first sacrifice layer in the embodiment of the present invention 2.
In figure, Reference numeral is expressed as: 1-substrate, 2-resilient coating, 3-sacrifice layer, 31-first sacrifice layer, 311-groove, 32-second sacrifice layer, 321-projection, 322-resilient coating groove, 33-space, 4-solar cell layer, 41-first ohmic contact layer, 42-first window layer, 43-emitter region, 44-base, 45-back surface field, 46-Second Window layer, 47-second ohmic contact layer, 5-second resilient coating, 6-electrode.
Embodiment
In order to make those skilled in the art person understand content of the present invention better, below in conjunction with drawings and Examples, technical scheme provided by the present invention is described in further detail.
Embodiment 1
As shown in Figure 1, present embodiments provide a kind of solar battery epitaxial wafer, comprise the substrate 1 set gradually, resilient coating 2, sacrifice layer 3 and solar cell layer 4, wherein, sacrifice layer 3 comprises the first sacrifice layer 31 and the second sacrifice layer 32, first sacrifice layer 31 is close to resilient coating 2 and is arranged, second sacrifice layer 32 is close to the first sacrifice layer 31 and is arranged, first sacrifice layer 31 is distributed with many grooves 311, second sacrifice layer 32 has multiple projection 321 coordinated with groove 311, as shown in Figure 2, there is in protruding 321 the space 33 that the length direction along groove 311 extends, be provided for the inside that corrosive liquid flows into sacrifice layer 3.
Particularly, above-mentioned groove 311 can be through whole sacrifice layer 3, also can be that the edge of two ends distance sacrifice layer 3 has some distances.Correspondingly, space 33 can be through whole sacrifice layer 3, to be more beneficial to the edge of selective corrosion liquid from sacrifice layer 3 to its internal flow, to also further reduce the volume needing the sacrifice layer 3 be corroded simultaneously, the process of solar battery epitaxial wafer stripping technology can be accelerated further.Space 33 also can be that the edge of two ends distance sacrifice layer 3 has some distances, after the edge of sacrifice layer 3 erodes by corrosive liquid, just can enter the inside of sacrifice layer 3 along space 33, the gas that then sacrifice layer 3 internal corrosion reaction produces also can be discharged by space 33.In addition, in order to ensure can to form space 33 in process of production, the degree of depth of groove 311 and width be there are certain requirements, in order to ensure the degree of depth of groove 311, when the first sacrifice layer 31 thickness is larger, above-mentioned groove 311 can be with the end, and the first sacrifice layer 31 now bottom groove 311 contacts with the top of the projection 321 on the second sacrifice layer 32; When the thickness of the first sacrifice layer 31 is less, groove 311 also can be do not have with the end, and the top of the projection 321 namely on the second sacrifice layer 32 contacts with resilient coating 2 through the first sacrifice layer 31.In order to ensure the degree of depth of groove 311, when the first sacrifice layer 31 thickness low LCL, even can also in resilient coating 2 on form resilient coating groove 322, align with the groove 311 on the first sacrifice layer 31, ensure that the thickness of whole groove 311 reaches requirement, be convenient to the space 33 needed for being formed.
The solar battery epitaxial wafer that the present embodiment provides, multiple spaces 33 of horizontal-extending are set in its sacrifice layer 3, when being immersed selective corrosion liquid, selective corrosion liquid enters its inside by this space 33 from the edge of sacrifice layer 3, instead of can only corrode gradually from the edge of sacrifice layer 3 to its inside, accelerate the speed that is corroded of sacrifice layer 3, thus decrease the time in solar cell manufacturing process needed for extension stripping technology.And when the firm performance of sacrifice layer 3 body structures meets the manufacture craft of solar cell, the volume needing the sacrifice layer 3 be corroded can be reduced in the space 33 arranged in the inner, thus further shorten the time of extension stripping technology.The space 33 be arranged on sacrifice layer 3 can also contribute to the timely discharge of the gas that corrosion reaction produces, not only can prevent because the accumulation of gas is to the obstruction of corrosion reaction, the pressure that produces because of gas buildup can also be prevented the infringement of solar cell layer 4 and substrate 1.In addition, decrease being corroded the time of sacrifice layer 3, just can reduce solar cell layer 4 and the time of substrate 1 in corrosive liquid, reduce the risk that its liquid that is corroded damages, thus improve the quality of solar battery product, also improve and produce line yields.
Preferably, many the grooves 311 be distributed on the first sacrifice layer 31 are arranged in parallel, namely groove 311 is linear grooves and arranged in parallel on sacrifice layer 3, correspondingly, as shown in Figure 3, space 33 is also arranged in parallel on sacrifice layer 3, so when this solar battery epitaxial wafer is immersed selective corrosion liquid, corrosive liquid can enter the inside of sacrifice layer 3 along the two ends in this space 33, thus accelerates the speed that is corroded of whole sacrifice layer 3.Space 33 arranged in parallel can ensure the steadiness of sacrifice layer 3 various places inside structure.Particularly, the width of groove 311 is 1 ~ 2 micron, and the spacing of adjacent two grooves 311 is 1 ~ 4 micron.In the present embodiment, projection 321 and groove 311 are close-fitting, and therefore, the width of protruding 321 is also 1 ~ 2 micron, and the spacing of adjacent two projections 321 is also 1 ~ 4 micron.Preferably, the width of groove 311 is 1.5 microns, and the spacing of adjacent two grooves 311 is 1 micron or 1.5 microns or 2 microns, and correspondingly, the width of protruding 321 is also 1.5 microns, and the spacing of adjacent two projections 321 is also 1 micron or 1.5 microns or 2 microns.The width of groove 311 carrys out corresponding adjustment according to its degree of depth, and the degree of depth of groove 311 limits by the thickness of the first sacrifice layer 31 or the gross thickness of the first sacrifice layer 31 and resilient coating 2.The width of adjustment groove 311 is in order to when making solar battery epitaxial wafer by growth technology, can produce space large as far as possible, longitudinal section 33.But, when groove 311 degree of depth is certain, if its width is excessive or too small, all likely cause the longitudinal section in space 33 too small.The spacing of adjacent two grooves 311 is arranged between 1 ~ 4 micron, while the steadiness that ensure that sacrifice layer 3 structure, increase again the volume of sacrifice layer 3 internal voids 33 as far as possible, also be the discharge of the gas that the conveniently flowing of selective corrosion liquid in sacrifice layer 3 inside and corrosion reaction produce, thus shorten the time of extension stripping technology.In addition, to can be the square or trapezoidal of upper opening or arc or U-shaped or other irregularly shaped in above-mentioned groove 311 longitudinal section.
As other alternative embodiments of the present embodiment, above-mentioned groove 311 also can be arranged on sacrifice layer 3 in star, correspondingly, space 33 is also be arranged on sacrifice layer 3 in star, so when this solar battery epitaxial wafer is immersed selective corrosion liquid, corrosive liquid can immerse the inside of sacrifice layer 3 from the surrounding of sacrifice layer 3 along this space 33, thus also can accelerate the speed that is corroded of whole sacrifice layer 3 further.
Preferably, the bottom of groove 311 extends downwardly on resilient coating 2.Further preferably, as shown in Figure 4, also be provided with at resilient coating 2 and align and the resilient coating groove 322 be communicated with the groove 311 on the first sacrifice layer 31, because the finite thickness of sacrifice layer 3, so be also provided with resilient coating groove 322 on the buffer layer 2, as the extension bottom groove 311, therefore can increase the height of protruding 321, thus the longitudinal section in space 33 can be expanded.And larger longitudinal section, space 33 can the outflow of gas that produces of the flowing of more convenient selective corrosion liquid and corrosion reaction.Particularly, the degree of depth of resilient coating groove 322 is 1 ~ 2 micron.
Particularly, the width in above-mentioned space 33 reduces from the top of projection 321 gradually to the second sacrifice layer 32 direction.Longitudinal section, space 33 is triangular in shape or trapezoidal.When groove 311 longitudinal section is the trapezoidal of upper opening or arc or U-shaped or other are irregularly shaped, the longitudinal section in this space 33 also may be other shapes, and the height in space 33 is 1 ~ 10 micron.
Particularly, the thickness of resilient coating 2 is 2 ~ 4 microns, and the thickness of the first sacrifice layer 31 is 0.5 ~ 1.5 micron, and the gross thickness of the first sacrifice layer 31 and the second sacrifice layer 32 is 4 ~ 8 microns.
Particularly, the material of the first sacrifice layer 31 and the second sacrifice layer 32 is Al
xga
1-xas, and x is 0.6 ~ 1, wherein x can be preferably 0.7 ~ 1.And, the Al of the first sacrifice layer 31
xga
1-xx in As material can with the Al of the second sacrifice layer 32
xga
1-xx in As material is identical, also can be different.The material of the first sacrifice layer 31 can be other materials, and the material of the second sacrifice layer 32 also can be other materials, as long as their material is compared with the material of solar cell layer 4 with substrate 1, be more easily corroded corrosion.
Particularly, as shown in Figure 5, solar cell layer 4 comprises the first ohmic contact layer 41, first window layer 42, emitter region 43, base 44, back surface field 45, Second Window layer 46 and the second ohmic contact layer 47 successively.The material of the first ohmic contact layer 41 is GaAs, thickness is 50-300 nanometer, the material of first window layer 42 is GaInP, thickness is 10-100 nanometer, the material of emitter region 43 is GaAs, the material of base 44 is GaAs, the material of back surface field 45 is GaInP, the gross thickness of emitter region 43, base 44 and back surface field 45 is 2-5 micron, the material of Second Window layer 46 is GaInP, thickness is 10-100 nanometer, and the material of the second ohmic contact layer 47 is GaAs, thickness is 50-300 nanometer.Also comprise the second resilient coating 5 between solar cell layer 4 and sacrifice layer 3, the material of resilient coating 2 and the second resilient coating 5 is GaAs and thickness is 100-900 nanometer.The upper surface of the second ohmic contact layer 47 of this solar battery epitaxial wafer is also provided with electrode 6, and this electrode 6 is the metal composite films be made up of the gold of the titanium of 30 ~ 150 nanometers and 50 ~ 500 nanometers.
Embodiment 2
As shown in Figure 6, present embodiments provide a kind of manufacture method of solar battery epitaxial wafer, in order to make the solar battery epitaxial wafer in above-described embodiment 1, comprise the following steps:
S1: epitaxial growth buffer 2 on substrate 1, specifically can adopt metallo-organic compound Chemical Vapor-Phase Epitaxy technology (MOCVD).This metallo-organic compound Chemical Vapor-Phase Epitaxy technology is the growth technology making the most ripe best results at present for III-V solar cell, in addition also can the slow molecular beam epitaxy technique of growth selection (MBE).
S2: epitaxial growth first sacrifice layer 31 on the buffer layer 2, as shown in Figure 7, specifically can adopt metallo-organic compound Chemical Vapor-Phase Epitaxy technology (MOCVD).
S3: etch many grooves 311 on the first sacrifice layer 31, as shown in Figure 8, what the etching of groove 311 preferably adopted is dry etch process, and it is effective and etched features is accurate; Also can adopt photoetching and wet corrosion technique, wet etching cost is low, and it is convenient to implement.
S4: at the first sacrifice layer 31 Epitaxial growth second sacrifice layer 32, specifically can adopt metallo-organic compound Chemical Vapor-Phase Epitaxy technology (MOCVD), second sacrifice layer 32 is close to the first sacrifice layer 31, second sacrifice layer 32 forms the projection 321 that coordinates with groove 311, and the space 33 that protruding 321 interior formation extend along the length direction of groove 311.
S5: produce solar battery epitaxial wafer at the second sacrifice layer 32 Epitaxial growth solar cell layer 4, specifically can adopt metallo-organic compound Chemical Vapor-Phase Epitaxy technology (MOCVD).
After producing above-mentioned solar battery epitaxial wafer, first, solar cell layer 4 is produced electrode 6, the making of electrode 6 specifically can adopt electron beam evaporation or sputtering method, preferred employing electron beam evaporation method, it can carry out evaporation coating to refractory metal, has good directivity, and film forming thickness and pattern have certain advantage.Then, solar cell layer 4 upper surface being provided with electrode 6 is pasted in other thin carrier (as very thin copper sheet, plastic film etc.).Finally, optionally erode the first sacrifice layer 31 and the second sacrifice layer 32 solar cell layer 4 and substrate 1 to be separated, thus produce solar cell.
The manufacture method of the solar battery epitaxial wafer that the present embodiment provides, first epitaxial growth first sacrifice layer 31 on the buffer layer 2, then on the first sacrifice layer 31, many grooves 311 are etched, last at the first sacrifice layer 31 Epitaxial growth second sacrifice layer 32, when the degree of depth of groove 311 with its width than can form the space 33 extended along the length direction of groove 311 when suitable in the inside of sacrifice layer 3.When solar battery epitaxial wafer will be produced immerse selective corrosion liquid, selective corrosion liquid enters its inside by this space 33 from the edge of sacrifice layer 3, accelerate the speed that is corroded of sacrifice layer 3, thus decrease the time in solar cell manufacturing process needed for extension stripping technology.And, the space 33 be arranged on sacrifice layer 3 can also contribute to the timely discharge of the gas that corrosion reaction produces, not only can prevent because the accumulation of gas is to the obstruction of corrosion reaction, the pressure that produces because of gas buildup can also be prevented the infringement of solar cell layer 4 and substrate 1.
Preferably, in step s3, run through the first sacrifice layer 31 bottom the groove 311 the first sacrifice layer 31 etched to extend downwardly on resilient coating 2.Further preferably, after having etched the groove 311 running through the first sacrifice layer 31, continue to etch downwards, until also etch resilient coating groove 322 on the buffer layer 2, this resilient coating groove 322 has aligned with groove 311 and has been communicated with.When epitaxial growth the second sacrifice layer 32, just can obtain highly higher projection 321, thus the longitudinal section in space 33 can be expanded.Larger longitudinal section, space 33 can the outflow of gas that produces of the flowing of more convenient selective corrosion liquid and corrosion reaction.Particularly, the degree of depth of resilient coating groove 322 is 1 ~ 2 micron.
Further preferably, many the grooves 311 that first sacrifice layer 31 etches are arranged in parallel, namely groove 311 is linear grooves and arranged in parallel on sacrifice layer 3, correspondingly, space 33 is also arranged in parallel on sacrifice layer 3, so when this solar battery epitaxial wafer is immersed selective corrosion liquid, corrosive liquid can enter the inside of sacrifice layer 3 along the two ends in this space 33, thus accelerates the speed that is corroded of whole sacrifice layer 3.Space 33 arranged in parallel can ensure the steadiness of sacrifice layer 3 various places inside structure.
Particularly, the width of groove 311 is 1 ~ 2 micron, and the spacing of adjacent two grooves 311 is 1 ~ 4 micron.In the present embodiment, projection 321 and groove 311 are close-fitting, and therefore, the width of protruding 321 is also 1 ~ 2 micron, and the spacing of adjacent two projections 321 is also 1 ~ 4 micron.Preferably, the width of groove 311 is 1.5 microns, and the spacing of adjacent two grooves 311 is 1 micron or 1.5 microns or 2 microns, and correspondingly, the width of protruding 321 is also 1.5 microns, and the spacing of adjacent two projections 321 is also 1 micron or 1.5 microns or 2 microns.
Particularly, the width in above-mentioned space 33 reduces from the top of projection 321 gradually to the second sacrifice layer 32 direction.Longitudinal section, space 33 is triangular in shape or trapezoidal.The height in space 33 is 1 ~ 10 micron.The thickness of resilient coating 2 is 2 ~ 4 microns, and the thickness of the first sacrifice layer 31 is 0.5 ~ 1.5 micron, and the gross thickness of the first sacrifice layer 31 and the second sacrifice layer 32 is 4 ~ 8 microns.
Obviously, above-described embodiment is only for clearly example being described, and the restriction not to execution mode.For those of ordinary skill in the field, can also make other changes in different forms on the basis of the above description.Here exhaustive without the need to also giving all execution modes.And thus the apparent change of extending out or variation be still among the protection range of the invention.
Claims (10)
1. a solar battery epitaxial wafer, comprise the substrate (1) set gradually, resilient coating (2), sacrifice layer (3) and solar cell layer (4), it is characterized in that, described sacrifice layer (3) at least comprises the first sacrifice layer (31) and the second sacrifice layer (32), described first sacrifice layer (31) is close to described resilient coating (2) and is arranged, described second sacrifice layer (32) is close to the setting of described first sacrifice layer (31), described first sacrifice layer (31) is distributed with many grooves (311), described second sacrifice layer (32) has the projection (321) that multiple and described groove (311) coordinates, and there is in described projection (321) space (33) that the length direction along described groove (311) extends, be provided for the inside that corrosive liquid flows into described sacrifice layer (3).
2. solar battery epitaxial wafer as claimed in claim 1, it is characterized in that, many the described grooves (311) be distributed on described first sacrifice layer (31) are arranged in parallel, and described space (33) are also correspondingly arranged in parallel.
3. solar battery epitaxial wafer as claimed in claim 2, it is characterized in that, the width of described groove (311) is 1 ~ 2 micron, and the spacing of adjacent two described grooves (311) is 1 ~ 4 micron.
4. the solar battery epitaxial wafer according to any one of claim 1-3, it is characterized in that, the bottom of described groove (311) extends downwardly on described resilient coating (2), also be provided with at described resilient coating (2) and align and the resilient coating groove (322) be communicated with the described groove (311) on described first sacrifice layer (31), the degree of depth of described resilient coating groove (322) is 1 ~ 2 micron.
5. the solar battery epitaxial wafer according to any one of claim 1-4, is characterized in that, the width of described space (33) reduces from the top of described projection (321) gradually to described second sacrifice layer (32) direction.
6. the solar battery epitaxial wafer according to any one of claim 1-5, is characterized in that, the longitudinal section of described space (33) is triangular in shape or trapezoidal.
7. the solar battery epitaxial wafer according to any one of claim 1-6, it is characterized in that, the height in described space (33) is 1 ~ 10 micron, the thickness of described resilient coating (2) is 2 ~ 4 microns, the thickness of described first sacrifice layer (31) is 0.5 ~ 1.5 micron, and the gross thickness of described first sacrifice layer (31) and described second sacrifice layer (32) is 4 ~ 8 microns.
8. the solar battery epitaxial wafer according to any one of claim 1-7, is characterized in that, the material of described first sacrifice layer (31) and described second sacrifice layer (32) is Al
xga
1-xas, and x is 0.6 ~ 1.
9. a manufacture method for solar battery epitaxial wafer, is characterized in that, comprises the following steps:
Resilient coating (2) described in described substrate (1) Epitaxial growth;
The first sacrifice layer (31) described in described resilient coating (2) Epitaxial growth;
Described first sacrifice layer (31) etches many described grooves (311);
The second sacrifice layer (32) described in described first sacrifice layer (31) Epitaxial growth, described second sacrifice layer (32) is close to described first sacrifice layer (31), described second sacrifice layer (32) above forms the described projection (321) coordinated with described groove (311), and forms the space (33) extended along the length direction of described groove (311) in described projection (321);
Described in described second sacrifice layer (32) Epitaxial growth, solar cell layer (4) produces solar battery epitaxial wafer.
10. the manufacture method of solar battery epitaxial wafer as claimed in claim 9, it is characterized in that, what described first sacrifice layer (31) etched many described grooves (311) utilize is dry etch process, or what utilize is photoetching and wet corrosion technique.
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| CN111244224A (en) * | 2018-11-29 | 2020-06-05 | 东泰高科装备科技有限公司 | Epitaxial layer structure, preparation method, stripping method and solar cell preparation method |
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Effective date of registration: 20190717 Address after: 215614, Shuanglong Village, Fenghuang Town, Suzhou, Jiangsu, Zhangjiagang Patentee after: SUZHOU MATRIX OPTICAL CO., LTD. Address before: Shuanglong Village Phoenix Town Zhangjiagang city Suzhou city Jiangsu province 215614 (Suzhou Ming photoelectric Co. Ltd.) Patentee before: Suzhou Qiangming Photoelectric Co., Ltd. |