CN105428215A - Metal stress layer and hydrophilic agent treatment based epitaxial wafer complete stripping method - Google Patents
Metal stress layer and hydrophilic agent treatment based epitaxial wafer complete stripping method Download PDFInfo
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- CN105428215A CN105428215A CN201510799470.3A CN201510799470A CN105428215A CN 105428215 A CN105428215 A CN 105428215A CN 201510799470 A CN201510799470 A CN 201510799470A CN 105428215 A CN105428215 A CN 105428215A
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 51
- 239000002184 metal Substances 0.000 title claims abstract description 51
- 238000000034 method Methods 0.000 title claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 21
- 238000001704 evaporation Methods 0.000 claims abstract description 19
- 230000008020 evaporation Effects 0.000 claims abstract description 19
- 239000002253 acid Substances 0.000 claims abstract description 5
- 239000007788 liquid Substances 0.000 claims abstract description 5
- 239000013589 supplement Substances 0.000 claims abstract description 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 18
- 239000000243 solution Substances 0.000 claims description 12
- 238000005566 electron beam evaporation Methods 0.000 claims description 11
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 9
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 9
- 238000004140 cleaning Methods 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 9
- 230000007797 corrosion Effects 0.000 claims description 7
- 238000005260 corrosion Methods 0.000 claims description 7
- 238000010790 dilution Methods 0.000 claims description 6
- 239000012895 dilution Substances 0.000 claims description 6
- 238000002360 preparation method Methods 0.000 claims description 6
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 6
- 238000005406 washing Methods 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 230000000694 effects Effects 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 238000002791 soaking Methods 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 27
- 239000004065 semiconductor Substances 0.000 description 7
- 239000010409 thin film Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 4
- 230000005693 optoelectronics Effects 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 3
- 206010040844 Skin exfoliation Diseases 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000035618 desquamation Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02032—Preparing bulk and homogeneous wafers by reclaiming or re-processing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B43/00—Operations specially adapted for layered products and not otherwise provided for, e.g. repairing; Apparatus therefor
- B32B43/006—Delaminating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
- H01L31/1896—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates for thin-film semiconductors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
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Abstract
The invention discloses a metal stress layer and hydrophilic agent treatment based epitaxial wafer complete stripping method. The method is mainly characterized in that by utilizing a characteristic of high corrosive selection ratio of AlAs in HF acid, a metal stress layer with the preset thickness is introduced; under the action of the metal stress layer, an epitaxial structure on an epitaxial wafer is curled upwards, so that the epitaxial structure can be separated from a substrate of the epitaxial wafer in time and a corrosive liquid can supplement a region in which a reaction is to be performed; meanwhile, a hydrophilic agent is introduced to effectively reduce the surface tension of a contact surface, reduce a contact angle, enable air bubbles generated in the reaction to be discharged in time and promote the proceeding of the reaction; and in addition, by utilizing high uniformity and repeatability of an electronic beam evaporation device, large-batch metal stress layers can be prepared simultaneously and then substrates are removed in batch, wherein the substrates can be recycled. With the method, the completely stripped substrate and the completely stripped epitaxial structure can be obtained.
Description
Technical field
The present invention relates to field of semiconductor photoelectron technique, refer in particular to a kind of epitaxial wafer whole stripping means based on metal stresses layer and hydrophilizing agent process.
Background technology
Compound semiconductor device is GaAs such as, indium phosphide etc., affects by its material factor, price and the relative silicon-based electronic devices of cost, always higher, and the part occupying cost significant proportion then comes from the substrate needed for epitaxial growth.If substrate can be recycled, the cost then occupying the opto-electronic device of critical role based on the semiconductor laser, solar cell, hetero-junction bipolar transistor, High Electron Mobility Transistor etc. of GaAs, indium phosphide in Signal transmissions, optical communication, electronic signal process then can largely reduce, and the thin-film solar cells after removal substrate, thin film semiconductor's laser is at power-weight ratio, and the aspects such as heat dissipation characteristics all will significantly be better than traditional device.
In early days, the method that substrate major part adopts mechanical lapping is removed.In recent years, based on the substrate desquamation recovery technology of sacrifice layer process favor by more researchers.For germanium base, GaAs based, indium phosphide device, generally all adopts certain thickness AlAs sacrifice layer, utilizes its corrosion Selection radio characteristic high in HF (hydrogen fluorine) acid to realize the stripping of epitaxial layer structure.But in lateral encroaching process, if reaction product fails to drain in time, sacrifice layer can not contact by timely with fresh corrosive liquid, then largely can hinder carrying out further of reaction, even make reaction stop.
Summary of the invention
The object of the invention is to overcome the deficiencies in the prior art and shortcoming, propose a kind of epitaxial wafer whole stripping means based on metal stresses layer and hydrophilizing agent process, the method can obtain the complete substrate stripped down, and the complete epitaxial structure stripped down.
For achieving the above object, technical scheme provided by the present invention is: a kind of epitaxial wafer whole stripping means based on metal stresses layer and hydrophilizing agent process, the corrosion Selection radio characteristic that the method mainly utilizes AlAs high in HF acid, introduce the metal stresses layer of preset thickness, under the effect of metal stresses layer, epitaxial structure on epitaxial wafer will upsweep, thus epitaxial structure can be separated in time with the substrate of epitaxial wafer, make corrosive liquid can supplement question response district in time, introduce hydrophilizing agent simultaneously, effectively to reduce the surface tension of contact-making surface, reduce contact angle, the steam bubble that reaction is produced can be drained in time, and then advance the carrying out of reaction, in addition, utilize high uniformity and the repeatability of electron beam evaporation equipment, metal stresses layer can be prepared in enormous quantities simultaneously, then batch carries out substrate removal, and substrate recoverable, it comprises the following steps:
1) the complete epitaxial wafer of growth is carried out organic washing and oxide on surface cleaning, to improve the bonding force of metal stresses layer on epitaxial wafer surface, wherein said epitaxial wafer comprises the substrate, AlAs sacrifice layer, the device function structure sheaf that are cascading from bottom to up;
2) the complete epitaxial wafer of cleaning is moved to electron beam evaporation equipment, the mode of electron beam evaporation is adopted to carry out repeatedly evaporation, the device function structure sheaf of epitaxial wafer prepares metal stresses layer, wherein in preparation process, control key process parameter, to control the stress of metal stresses layer, until the thickness of metal stresses layer reaches preset requirement;
3) epitaxial wafer complete for evaporation is put into jam, and carry out epitaxial structure stripping in level is immersed in containing hydrophilizing agent water-bath HF etchant solution, can obtain after soaking Preset Time peeling off complete epitaxial structure, substrate is recycled simultaneously.
In step 1) in, described AlAs sacrificial layer thickness is 5-15nm;
The organic washing of carrying out and oxide on surface cleaning comprise successively: acetone ultrasonic cleaning 5-7 minute; Isopropyl alcohol ultrasonic cleaning 5-7 minute; The hydrochloric acid solution of dilution 50 seconds to 70 seconds, dilution proportioning is HCl:H
2o=1:1; BOE solution 50 seconds to 70 seconds.
In step 2) in, metal in described metal stresses layer is chosen as goldc grains, silver granuel or shot copper, during evaporation, vacuum degree control is on 1E-7Torr, it is per second per second to 3.5 dusts that evaporation rate is set in 2.5 dusts, and evaporation adopts clearance-type stepwise heating mode, and heating-up temperature is 145 degree to 155 degree, the heating temperatures opening time melt is complete reach vacuum level requirements time, heating time continue 30 minutes; Repeat evaporation to metal stresses layer thickness and reach 25 microns to 27 microns.
In step 3) in, described hydrophilizing agent is acetone, and bath temperature controls at 40 degree of-50 degree, and during corrosion, the placement of epitaxial wafer in jam keeps metal stresses layer side upper, and the proportioning of etchant solution is acetone: HF: water=1:1:1.
Compared with prior art, tool has the following advantages and beneficial effect in the present invention:
The invention provides a kind of epitaxial wafer whole lift-off technology based on metal stresses layer and hydrophilizing agent process, by complete for substrate stripping, can be recycled by this technology, thus significantly reduce the preparation cost of device.The experiment proved that, the time adopting the inventive method to peel off 4 cun of complete wafers can foreshorten to 13 hours, and utilize comparatively high uniformity and the repeatability of electron beam evaporation equipment, metal stresses layer can be prepared (in practice comparatively in enormous quantities simultaneously, our board used can carry out 52 operations simultaneously at every turn), then carry out substrate removal.And the opto-electronic device such as thin-film solar cells, thin film semiconductor's laser after removal substrate is all obviously better than traditional device in power-weight ratio, heat dissipation characteristics etc.
Accompanying drawing explanation
Fig. 1 is the structural representation after the upper metal stresses layer of the preparation of epitaxial wafer described in embodiment.
Embodiment
Below in conjunction with specific embodiment, the invention will be further described.
Epitaxial wafer whole stripping means based on metal stresses layer and hydrophilizing agent process described in the present embodiment, the corrosion Selection radio characteristic mainly utilizing AlAs high in HF acid, introduce the metal stresses layer of suitable thickness, and under the effect of metal stresses layer, epitaxial structure on epitaxial wafer will be curling slightly upward, thus epitaxial structure can be separated in time with the substrate of epitaxial wafer, make corrosive liquid can supplement question response district in time, introduce hydrophilizing agent simultaneously, effectively to reduce the surface tension of contact-making surface, reduce contact angle, the steam bubble that reaction is produced can be drained in time, and then advance the carrying out of reaction, in addition, utilize high uniformity and the repeatability of electron beam evaporation equipment, metal stresses layer can be prepared in enormous quantities simultaneously, then batch carries out substrate removal, and substrate recoverable, it comprises the following steps:
1) the complete epitaxial wafer of growth is carried out organic washing and oxide on surface cleaning, to improve the bonding force of metal stresses layer on epitaxial wafer surface; Wherein, described epitaxial wafer comprises the substrate, AlAs sacrifice layer, the device function structure sheaf that are cascading from bottom to up, as shown in Figure 1; And the organic washing of carrying out and oxide on surface cleaning comprise acetone ultrasonic cleaning 5-7 minute, 6 minutes preferred time successively; Isopropyl alcohol ultrasonic cleaning 5-7 minute, 6 minutes preferred time; The hydrochloric acid solution of dilution 50 seconds to 70 seconds, 60 seconds preferred time, dilution proportioning is HCl:H2O=1:1; BOE solution 50 seconds to 70 seconds, 60 seconds preferred time.
2) the complete epitaxial wafer of cleaning is moved to electron beam evaporation equipment, the mode of electron beam evaporation is adopted to carry out repeatedly evaporation, the device function structure sheaf of epitaxial wafer prepares metal stresses layer, in preparation process, control key process parameter, to control the stress of metal stresses layer, until the thickness of metal stresses layer reaches preset requirement; Wherein, the metal in described metal stresses layer is chosen as goldc grains, silver granuel or shot copper, preferred goldc grains (goldc grains chemical inertness is strong, and follow-up flow is unaffected); During evaporation, vacuum degree control is on 1E-7Torr, and it is per second per second to 3.5 dusts that evaporation rate is set in 2.5 dusts, and it is per second that preferred rate is set in 3 dusts; Evaporation adopts clearance-type stepwise heating mode, and heating-up temperature is 145 degree to 155 degree, and preferable temperature is 150 degree; The heating temperatures opening time melt is complete reach vacuum level requirements time, heating time continue 30 minutes; Repeat evaporation to metal stresses layer thickness and reach 25 microns to 27 microns.
3) epitaxial wafer (as shown in Figure 1 structure) complete for evaporation is put into jam, and carry out epitaxial structure stripping in level is immersed in containing hydrophilizing agent water-bath HF etchant solution, can obtain after soaking Preset Time peeling off complete epitaxial structure (epitaxial structure can be bonded to technique flow support substrates being carried out conventional solar cell), substrate is recycled simultaneously.Wherein, described hydrophilizing agent is acetone; Bath temperature controls at 40 degree of-50 degree, preferably 45 degree; During corrosion, the placement of epitaxial wafer in jam keeps metal stresses layer side upper; The proportioning of etchant solution is acetone: HF: water=1:1:1.
Remarks: semiconductor bar-type laser, vertical cavity surface emitting laser, hetero-junction bipolar transistor, High Electron Mobility Transistor, inverted structure solar cell, the opto-electronic devices such as flexible solar battery all can adopt this method to realize.
In sum, after the above scheme of employing, whole stripping process can be made to be able to acceleration by the inventive method, and by complete for substrate stripping, to recycle, thus can significantly reduce the preparation cost of device.The experiment proved that, the time adopting the inventive method to peel off 4 cun of complete wafers can foreshorten to 13 hours, and utilize comparatively high uniformity and the repeatability of electron beam evaporation equipment, metal stresses layer can be prepared (in practice comparatively in enormous quantities simultaneously, our board used can carry out 52 operations simultaneously at every turn), then carry out substrate removal.In addition, the opto-electronic device such as thin-film solar cells, thin film semiconductor's laser removed after substrate is all obviously better than traditional device in power-weight ratio, heat dissipation characteristics etc., is worthy to be popularized.
The examples of implementation of the above are only the preferred embodiment of the present invention, not limit practical range of the present invention with this, therefore the change that all shapes according to the present invention, principle are done, all should be encompassed in protection scope of the present invention.
Claims (4)
1. epitaxial wafer whole stripping means based on metal stresses layer and hydrophilizing agent process, it is characterized in that: the corrosion Selection radio characteristic that the method mainly utilizes AlAs high in HF acid, introduce the metal stresses layer of preset thickness, under the effect of metal stresses layer, epitaxial structure on epitaxial wafer will upsweep, thus epitaxial structure can be separated in time with the substrate of epitaxial wafer, make corrosive liquid can supplement question response district in time, introduce hydrophilizing agent simultaneously, effectively to reduce the surface tension of contact-making surface, reduce contact angle, the steam bubble that reaction is produced can be drained in time, and then advance the carrying out of reaction, in addition, utilize high uniformity and the repeatability of electron beam evaporation equipment, metal stresses layer can be prepared in enormous quantities simultaneously, then batch carries out substrate removal, and substrate recoverable, it comprises the following steps:
1) the complete epitaxial wafer of growth is carried out organic washing and oxide on surface cleaning, to improve the bonding force of metal stresses layer on epitaxial wafer surface, wherein said epitaxial wafer comprises the substrate, AlAs sacrifice layer, the device function structure sheaf that are cascading from bottom to up;
2) the complete epitaxial wafer of cleaning is moved to electron beam evaporation equipment, the mode of electron beam evaporation is adopted to carry out repeatedly evaporation, the device function structure sheaf of epitaxial wafer prepares metal stresses layer, wherein in preparation process, control key process parameter, to control the stress of metal stresses layer, until the thickness of metal stresses layer reaches preset requirement;
3) epitaxial wafer complete for evaporation is put into jam, and carry out epitaxial structure stripping in level is immersed in containing hydrophilizing agent water-bath HF etchant solution, can obtain after soaking Preset Time peeling off complete epitaxial structure, substrate is recycled simultaneously.
2. a kind of epitaxial wafer whole stripping means based on metal stresses layer and hydrophilizing agent process according to claim 1, is characterized in that: in step 1) in, described AlAs sacrificial layer thickness is 5-15nm;
The organic washing of carrying out and oxide on surface cleaning comprise successively: acetone ultrasonic cleaning 5-7 minute; Isopropyl alcohol ultrasonic cleaning 5-7 minute; The hydrochloric acid solution of dilution 50 seconds to 70 seconds, dilution proportioning is HCl:H
2o=1:1; BOE solution 50 seconds to 70 seconds.
3. a kind of epitaxial wafer whole stripping means based on metal stresses layer and hydrophilizing agent process according to claim 1, it is characterized in that: in step 2) in, metal in described metal stresses layer is chosen as goldc grains, silver granuel or shot copper, during evaporation, vacuum degree control is on 1E-7Torr, it is per second per second to 3.5 dusts that evaporation rate is set in 2.5 dusts, evaporation adopts clearance-type stepwise heating mode, heating-up temperature is 145 degree to 155 degree, the heating temperatures opening time melt is complete reach vacuum level requirements time, heating time continue 30 minutes; Repeat evaporation to metal stresses layer thickness and reach 25 microns to 27 microns.
4. a kind of epitaxial wafer whole stripping means based on metal stresses layer and hydrophilizing agent process according to claim 1, it is characterized in that: in step 3) in, described hydrophilizing agent is acetone, bath temperature controls at 40 degree of-50 degree, during corrosion, the placement of epitaxial wafer in jam keeps metal stresses layer side upper, and the proportioning of etchant solution is acetone: HF: water=1:1:1.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510799470.3A CN105428215A (en) | 2015-11-19 | 2015-11-19 | Metal stress layer and hydrophilic agent treatment based epitaxial wafer complete stripping method |
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| CN201510799470.3A CN105428215A (en) | 2015-11-19 | 2015-11-19 | Metal stress layer and hydrophilic agent treatment based epitaxial wafer complete stripping method |
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| CN105428215A true CN105428215A (en) | 2016-03-23 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107275186A (en) * | 2017-06-16 | 2017-10-20 | 中山德华芯片技术有限公司 | A kind of preparation method of flexible structure support substrate |
| CN107649785A (en) * | 2017-09-22 | 2018-02-02 | 北京世纪金光半导体有限公司 | A kind of wafer thining method and device |
| CN116252188A (en) * | 2023-05-15 | 2023-06-13 | 苏州焜原光电有限公司 | Method for removing epitaxial layer from gallium antimonide epitaxial wafer |
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| CN102804408A (en) * | 2009-09-10 | 2012-11-28 | 密歇根大学董事会 | Methods of preparing flexible photovoltaic devices using epitaxial liftoff, and preserving the integrity of growth substrates used in epitaxial growth |
| CN103811626A (en) * | 2012-11-12 | 2014-05-21 | 天津中环新光科技有限公司 | Red light emitting diode with high-reflectivity metal reflecting layer and preparation method thereof |
| CN104362196A (en) * | 2014-11-25 | 2015-02-18 | 苏州矩阵光电有限公司 | InGaAs infrared detector and preparing method thereof |
| CN105070412A (en) * | 2015-08-27 | 2015-11-18 | 西安交通大学 | Method for transferring silver nano wire transparent electrode by use of dry method |
-
2015
- 2015-11-19 CN CN201510799470.3A patent/CN105428215A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102804408A (en) * | 2009-09-10 | 2012-11-28 | 密歇根大学董事会 | Methods of preparing flexible photovoltaic devices using epitaxial liftoff, and preserving the integrity of growth substrates used in epitaxial growth |
| CN103811626A (en) * | 2012-11-12 | 2014-05-21 | 天津中环新光科技有限公司 | Red light emitting diode with high-reflectivity metal reflecting layer and preparation method thereof |
| CN104362196A (en) * | 2014-11-25 | 2015-02-18 | 苏州矩阵光电有限公司 | InGaAs infrared detector and preparing method thereof |
| CN105070412A (en) * | 2015-08-27 | 2015-11-18 | 西安交通大学 | Method for transferring silver nano wire transparent electrode by use of dry method |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107275186A (en) * | 2017-06-16 | 2017-10-20 | 中山德华芯片技术有限公司 | A kind of preparation method of flexible structure support substrate |
| CN107649785A (en) * | 2017-09-22 | 2018-02-02 | 北京世纪金光半导体有限公司 | A kind of wafer thining method and device |
| CN116252188A (en) * | 2023-05-15 | 2023-06-13 | 苏州焜原光电有限公司 | Method for removing epitaxial layer from gallium antimonide epitaxial wafer |
| CN116252188B (en) * | 2023-05-15 | 2023-08-11 | 苏州焜原光电有限公司 | Method for removing epitaxial layer from gallium antimonide epitaxial wafer |
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