CN105280541A - Temporary bonding method and bonding-removing method for ultrathin semiconductor wafer - Google Patents

Temporary bonding method and bonding-removing method for ultrathin semiconductor wafer Download PDF

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CN105280541A
CN105280541A CN 201510591118 CN201510591118A CN105280541A CN 105280541 A CN105280541 A CN 105280541A CN 201510591118 CN201510591118 CN 201510591118 CN 201510591118 A CN201510591118 A CN 201510591118A CN 105280541 A CN105280541 A CN 105280541A
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semiconductor wafer
bonding
method
agent
bonding agent
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CN 201510591118
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邹鹏辉
王彦硕
潘斌
李彭瑞
刘鑫
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中国电子科技集团公司第五十五研究所
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381Details of chemical or physical process used for separating the auxiliary support from a device or wafer

Abstract

The invention discloses a temporary bonding method and bonding-removing method for an ultrathin semiconductor wafer. Through the cooperative use of a first bonding agent and a first organic reagent, and a second bonding agent and a second organic reagent, the cracking rate of the ultrathin semiconductor wafer during the back side process can be effectively reduced, and the chip yield is high. High-temperature dissolved wax is not needed for the separation process of the semiconductor wafer and a carrier sheet, the problem of binding strength decreasing caused by different expansion and shrinkage coefficients between semiconductor materials and back-side metal can be prevented, the separation of the wafer and the carrier sheet is free of immersing a reagent de-bonding agent for a long time, the wafer separation efficiency is high, and the wafer can be produced in batch.

Description

一种用于超薄半导体圆片的临时键合方法及去键合方法 Temporary bonding method for an ultra-thin semiconductor wafers and bonding method to

技术领域 FIELD

[0001] 本发明涉及一种用于超薄半导体圆片的临时键合方法及去键合方法。 [0001] The present invention relates to a method and a temporary bonding method of bonding a semiconductor wafer for thin.

背景技术 Background technique

[0002] 随着半导体器件频率的不断攀升,芯片厚度对器件性能产生重要影响。 [0002] With the rising frequency semiconductor device, an important impact on the thickness of the chip device performance. 薄芯片具有提高散热效率、机械性能与电性能,减小封装体积,减轻重量等优势,具有较大市场应用前景。 Thin chip with improved heat dissipation efficiency, mechanical properties and electric properties, reduce the package size and weight advantages, with great market prospect. 半导体器件的背面工艺一般包括衬底减薄、通孔刻蚀、背面金属化、芯片划切等步骤。 The back surface process of a semiconductor device typically includes a substrate thinning, via etching, backside metallization, and the like chip dicing step. 由于半导体圆片减薄后机械强度较弱,且由于应力的原因容易发生卷曲,导致圆片易碎,无法操作;当半导体圆片的衬底减薄至40um甚至更薄至20um时,圆片的裂片几率随半导体材料的厚度减少而呈几何倍数递增。 Since the semiconductor wafer is thinned mechanically weak, and the stress cause curling easily occurs, resulting in the frangible disc, inoperable; wafer when the semiconductor substrate is thinned to 40um to 20um while even thinner, the wafer the probability of lobes were geometrically increases with the thickness of the semiconductor material is reduced.

[0003] 因此半导体圆片需要在背面工艺过程中贴附机械强度好的载体片来控制裂片问题,目前行业内采用的晶圆键合方法一般是在在两块晶圆之间涂覆键合蜡,然后再采用键合机将两块晶圆键合在一起,以临时载片为依托进行后续工艺制作,可以提升超薄晶圆的强度。 [0003] The semiconductor wafer thus require good mechanical strength of the carrier sheet is attached to the back surface of the control lobe problem process, the wafer bonding method is currently employed in the industry is in general between two coated wafer bonding a wax, and then in a bonding machine bonds together two wafers, the carrier sheet to temporarily rely subsequent production process, can improve the strength of the ultrathin wafers.

[0004] 针对上述临时键合的晶圆进行分离一般有以下两种方法:第一种,利用溶剂从键合的两块晶圆的边缘溶解键合时的键合蜡,第二种就是采用热力剪切分离。 There are two general methods [0004] for separating the temporary wafer bonding: first, a solvent to dissolve the wax bonded to the bonding of the two from the edge of the bonding wafer, the second is to use thermal shear separation. 第一种方法,溶解剂从晶圆边缘处慢慢溶解键合蜡,溶解剂到达晶圆中心的时间太长,分离效率太低;第二种方法,在热剪贴时半导体材料与金属材料热胀冷缩系数不一致,导致圆片分离后金属粘附力下降,且剪切时容易损坏晶圆,成品率较低。 The first method, dissolving agent from the edge of the wafer bonded to slowly dissolve the wax, the center of the wafer dissolving agent arrival time is too long, the separation efficiency is too low; the second method, a semiconductor material and the metallic material of the heat during heat Clip expansion coefficient shrink due to inconsistent wafer after separation of the metal adhesion decreased, and easily damaged when cutting the wafer, the lower the yield.

[0005] 当半导体衬底减薄至40um甚至更薄时,上述2种分离方法在圆片分离后的圆片转移过程中,存在极高的裂片率,不适合超薄芯片的生产。 [0005] When the semiconductor substrate is thinned to 40um even thinner, the above-described two kinds of the separation process after the wafer transfer process the wafer separation in the presence of a high rate of lobes is not suitable for the production of ultra-thin chips. 且圆片与载体分离后还需要经历清洗、划切等工艺步骤,在此工艺过程中造成裂片率始终是业界的难题,严重阻碍超薄芯片在半导体行业的应用。 After the wafer and separated from the carrier also needs to undergo cleaning, dicing and other processing steps, resulting in this process is always a sliver of the industry's problems, a serious impediment to the application of ultra-thin chips in the semiconductor industry.

发明内容 SUMMARY

[0006] 发明目的:本发明的目的是提供一种能够降低超薄半导体圆片在工艺过程中的裂片率的用于超薄半导体圆片的临时键合方法及去键合方法。 [0006] Object of the invention: object of the present invention is to provide a method for reducing the temporary bonding a semiconductor wafer thin sliver of ultrathin semiconductor wafers in the process of bonding and debonding methods.

[0007] 技术方案:为达到此目的,本发明采用以下技术方案: [0007] Technical Solution: In order to achieve this object, the present invention employs the following technical solution:

[0008] 本发明所述的用于超薄半导体圆片的临时键合方法及去键合方法,其中: [0008] temporary bonding method and to a method for bonding the thin semiconductor wafer according to the present invention, wherein:

[0009] 所述键合方法包括以下的步骤: [0009] The bonding method comprising the steps of:

[0010] S1:清洗半导体圆片和第一载体片的表面; [0010] S1: a first cleaning surface of the semiconductor wafer and the carrier sheet;

[0011] S2:将半导体圆片和第一载体片的正面涂覆第一键合剂,并进行热烘固化; [0011] S2: The semiconductor wafer coated front sheet and the first carrier a first bonding agent, heat drying and curing;

[0012] S3:将半导体圆片和第一载体片正面相对,通过第一键合剂键合,形成半导体圆片与第一载体片的初步键合体; [0012] S3: The front of the semiconductor wafer and the carrier plate opposite the first, through a first bonding agent is bonded, form a preliminary laminate bond the first semiconductor wafer and the carrier sheet;

[0013] S4:将半导体圆片与第一载体片的键合体浸泡在第一有机试剂中,去除半导体圆片边缘的第一键合剂,形成缝隙; [0013] S4: The body of the semiconductor wafer and the first key carrier sheet soaked in a first organic reagent, removing the first semiconductor wafer edge bonding agent, a gap is formed;

[0014] S5:在步骤S4得到的半导体圆片背面涂覆第二键合剂,以填充步骤S4形成的缝隙,并进行固化,形成半导体圆片与第一载体片的最终键合体; [0014] S5: The semiconductor wafer back surface coated with a second bonding agent obtained in step S4, the step S4 is formed to fill the gap, and cured to form the final bond of the semiconductor wafer and the first carrier sheet assembly;

[0015] 所述去键合方法包括以下的步骤: [0015] The bonding method to include the steps of:

[0016] S6:将半导体圆片与第一载体片的最终键合体浸泡在第二有机试剂中,去除半导体圆片边缘的第二键合剂,以露出缝隙; [0016] S6: The final laminate of the semiconductor wafer and the first key carrier sheet soaked in a second organic reagent, removing the semiconductor wafer edge of the second bonding agent, to expose the slot;

[0017] S7:将步骤S6得到的半导体圆片固定在第二载体上,并将第二载体放在可施加外力的平台上; [0017] S7: The semiconductor wafer obtained in step S6 is fixed to the second carrier, the second carrier and the external forces may be applied on the platform;

[0018] S8:通过外力实现半导体圆片与第一载体片的分离; [0018] S8: separated by an external force to realize a semiconductor wafer and the first carrier sheet;

[0019] S9:使用第一有机试剂清洗步骤S8得到的半导体圆片,去除半导体圆片表面的第一键合剂,得到去键合后的半导体圆片。 [0019] S9: a first organic semiconductor wafer using the cleaning agent obtained in step S8, removing the semiconductor wafer surface of a first bonding agent, to obtain a semiconductor wafer after bonding.

[0020] 进一步,所述半导体圆片的材料为硅、砷化镓、磷化铟或者碳化硅中的任意一种。 [0020] Further, the semiconductor wafer material is silicon, gallium arsenide, indium phosphide or any of a silicon carbide.

[0021] 进一步,所述第一载体片不与第一键合剂、第二键合剂发生物理化学反应,并且第一载体片采用可重复使用的材料;所述第一键合剂、第二键合剂不与半导体圆片反应。 [0021] Further, the first carrier sheet does not bond with the first agent, second agent key physical and chemical reaction occurs, and the first carrier sheet using reusable materials; the first bonding agent, a second bonding agent It does not react with the semiconductor wafer.

[0022] 进一步,所述第一载体片的尺寸比半导体圆片的尺寸大。 [0022] Further, the first carrier sheet size larger than the size of the semiconductor wafer.

[0023] 进一步,所述第一键合剂的型号为SPACELIQUID TR2-50482。 [0023] Further, the first bonding agent model SPACELIQUID TR2-50482.

[0024] 进一步,所述第二键合剂的型号为wafer bondOHT1.10。 [0024] Further, the second bonding agent model wafer bondOHT1.10.

[0025] 进一步,所述第一有机试剂为第一键合剂的专用去除剂。 [0025] Further, the first organic bonding agent as the first reagent special remover.

[0026] 进一步,所述第二有机试剂为第二键合剂的专用去除剂。 [0026] Further, the second agent is an organic bonding agent of the second special remover.

[0027] 进一步,所述第二载体采用平整、能够固定半导体圆片的材料。 [0027] Further, the second flat carrier employed, material of the semiconductor wafer can be fixed.

[0028] 有益效果:本发明提供的用于超薄半导体圆片的临时键合方法及去键合方法,能够降低超薄半导体圆片在工艺过程中的裂片率,芯片成品率高;半导体圆片的分离过程不用经过高温解蜡,半导体材料与背面金属间不存在热胀冷缩系数不同导致的粘附力下降的问题;半导体圆片的分离过程不用经过长时间浸泡溶解剂,圆片分离效率高,适合量产•'为超薄芯片在半导体行业的推广奠定良好的工艺基础。 [0028] Advantageous Effects: The present invention provides a method and to temporary bonding method for bonding a semiconductor wafer thin, ultra-thin semiconductor wafers can be reduced in the lobes of the process, high yield chip; Semiconductor circle sheet separation process at high temperatures without a wax solution, the problem of different thermal expansion coefficients leads to decrease in adhesion does not exist between the semiconductor material and a back metal; without separation of the semiconductor wafer after prolonged immersion dissolving agent, separating discs high efficiency, suitable for mass production • 'lay a good foundation in the promotion process for the semiconductor industry, ultra-thin chips.

附图说明 BRIEF DESCRIPTION

[0029] 图1为本发明的步骤S4得到的半导体圆片的结构示意图; [0029] FIG. 1, step S4 of the present invention to obtain a semiconductor wafer structure diagram;

[0030]图2为本发明的步骤S5得到的半导体圆片与第一载体片的最终键合体的结构示意图; Step [0030] S5 in FIG. 2 of the present invention to obtain a final wafer bond a semiconductor body of the first carrier sheet is a schematic structural diagram;

[0031]图3为本发明的半导体圆片与第一载体片的最终键合体经过圆片减薄、背面通孔及背面金属化后的结构示意图; [0031] The semiconductor wafer of the present invention in FIG. 3 and the final assembly of the first carrier sheet bond wafer after thinning, the back surface of the through-hole structure and a schematic view of a backside metallization;

[0032]图4为本发明的步骤S7中得到的固定在一起的半导体圆片和第二载体的结构示意图; Step [0032] S7 in FIG. 4 of the present invention a semiconductor wafer structure secured together and the second vector obtained in a schematic view;

[0033]图5为本发明的步骤S8得到的分离后的半导体圆片的结构示意图; [0033] FIG. 5, Step S8 of the present invention, a semiconductor wafer obtained after the separation of structural diagram;

[0034]图6为本发明的步骤S9得到的去键合后的半导体圆片经过划片后的结构示意图。 The semiconductor wafer to the bonding step [0034] S9 of FIG. 6 of the present invention obtained through the schematic structure after dicing.

具体实施方式 detailed description

[0035] 本发明提供的用于超薄半导体圆片1的临时键合方法及去键合方法,其中: [0035] temporary bonding method and bonding method to thin the semiconductor wafer 1 for the present invention is provided, wherein:

[0036] 键合方法包括以下的步骤: [0036] The bonding method comprising the steps of:

[0037] S1:清洗半导体圆片1和第一载体片4的表面; [0037] S1: cleaning a semiconductor wafer 1 and the first surface of the carrier sheet 4;

[0038] S2:将半导体圆片1和第一载体片4的正面涂覆第一键合剂2,并进行热烘固化; [0038] S2: coating the semiconductor wafer front surface and a first carrier sheet 4 of the first bonding agent 2, and heat drying curing;

[0039] S3:将半导体圆片1和第一载体片4正面相对,通过第一键合剂2键合,形成半导体圆片1与第一载体片4的初步键合体; [0039] S3: The semiconductor wafer 1 and the first carrier sheet 4 opposite the front side, by bonding the first bonding agent 2, the initial bond formation of the semiconductor wafer 1 and the first carrier sheet body 4;

[0040] S4:将半导体圆片1与第一载体片4的键合体浸泡在第一有机试剂中,去除半导体圆片1边缘的第一键合剂2,形成缝隙3 ; [0040] S4: the semiconductor wafer 1 and the first carrier sheet 4 key body immersed in a first organic reagent, the semiconductor wafer 1 is removed edge of the first bonding agent 2, the slit 3 is formed;

[0041] S5:在步骤S4得到的半导体圆片1背面涂覆第二键合剂5,以填充步骤S4形成的缝隙3,并进行固化,形成半导体圆片1与第一载体片4的最终键合体; [0041] S5: The semiconductor wafer obtained in step S4, the back surface coated with a second bonding agent 5, to fill the gap 3 formed in the step S4, and cured to form a semiconductor wafer 1 and the first carrier sheet 4 of the final bond fit;

[0042] 去键合方法包括以下的步骤: [0042] debonding method comprising the steps of:

[0043] S6:将半导体圆片1与第一载体片4的最终键合体浸泡在第二有机试剂中,去除半导体圆片1边缘的第二键合剂5,以露出缝隙3 ; [0043] S6: the semiconductor wafer 1 and the first carrier sheet final key in the second body 4 is immersed in an organic reagent, removing the second semiconductor wafer bonding agent 5 edge 1, to expose the slot 3;

[0044] S7:将步骤S6得到的半导体圆片1固定在第二载体7上,并将第二载体7放在可施加外力的平台上; [0044] S7: The semiconductor wafer 1 obtained in step S6 is fixed to the second support 7, and the second support 7 on an external force may be applied on the platform;

[0045] S8:通过外力实现半导体圆片1与第一载体片4的分离; [0045] S8: separating force achieved by the semiconductor wafer 1 and the first carrier sheet 4;

[0046] S9:使用第一有机试剂清洗步骤S8得到的半导体圆片1,去除半导体圆片1表面的第一键合剂2,得到去键合后的半导体圆片1。 [0046] S9: a first organic semiconductor wafer using the cleaning agent 1 obtained in step S8, the surface of the semiconductor wafer 1 is removed a first bonding agent 2, obtained after removal of the semiconductor wafer 1 is bonded.

[0047] 半导体圆片1的材料可以为硅、砷化镓、磷化铟或者碳化硅中的任意一种,本实施例中为砷化镓。 Materials [0047] The semiconductor wafer 1 may be silicon, gallium arsenide, indium phosphide or any of a silicon carbide, gallium arsenide embodiment of the present embodiment.

[0048] 第一载体片4的材料为蓝宝石或者玻璃片等机械强度好,不与第一键合剂2、第二键合剂5发生物理化学反应,可重复使用的材料。 Materials [0048] a first carrier sheet 4 of the mechanical strength of sapphire glass or the like, and do not 2, the second bonding agent 5 occurs in the first physical and chemical reaction bonding agent, reusable materials. 本实施例中为蓝宝石。 The present embodiment is sapphire.

[0049] 为方便后续的去键合工艺操作,第一载体片4的尺寸比半导体圆片1的尺寸大。 [0049] To facilitate the bonding process to the subsequent operation, the size of the first carrier sheet 4 is larger than the size of a semiconductor wafer. 本实施例中,蓝宝石的直径比砷化镓圆片大4mm-10mm。 Embodiment, the diameter of 4mm-10mm sapphire wafer of the present embodiment is larger than GaAs.

[0050] 第一键合剂2应当机械强度弱、粘性适中、易清洗、不与半导体圆片1及第一载体片4反应。 [0050] 2 first bonding agent should be weak in mechanical strength, moderate viscosity, easy to clean, does not react with the semiconductor wafer 1 and the first carrier sheet 4. 本实施例中,第一键合剂2的型号为日化精工生产的SPACELIQUID TR2-50482。 In this embodiment, the first bonding agent type 2 is a daily production of Seiko SPACELIQUID TR2-50482.

[0051] 第二键合剂5应当粘性强、密封性好,不与背面工艺常用化学试剂、半导体圆片1反应,能有效增加半导体圆片1与载体片键合后的牢固度,并保护好第一键合剂2。 [0051] The second bonding agent should be 5 adhesive strength, sealing, without conventional technical back with a chemical agent, the reaction of the semiconductor wafer 1, the semiconductor wafer can effectively increase the firmness of the sheet 1 bonded to the carrier, and protect 2 the first bonding agent. 本实施例中,第二键合剂5的型号Srafer bondiHTl0.10。 In this embodiment, the second bonding agent of the type Srafer bondiHTl0.10 5.

[0052] 第一有机试剂是第一键合剂2的专用去除剂,不与半导体圆片1及载体片反应。 [0052] The first reagent is a first organic bonding agent remover 2 is dedicated, not the semiconductor wafer 1 and the reaction carrier sheet. 本实施例中,第一有机试剂可以为异丙醇、丙酮或乙醇中的任意一种,但优选异丙醇,处理时间为60-300秒,腐蚀深度为l-5mm。 In this embodiment, the first organic reagent may be any one of isopropanol, acetone or ethanol, preferably isopropanol but the treatment time is 60-300 seconds, corrosion depth of l-5mm. 异丙醇、丙酮。 Isopropanol, acetone. 若第一键合剂发生改变,专有去除剂也相应地进行调整。 If the first bonding agent is changed, proprietary remover adjusted accordingly.

[0053] 第二载体7的材料采用平整、能够固定半导体圆片1并且方便后续工艺操作,例如采用UV膜、蓝膜或者真空吸盘等。 Materials [0053] 7 using the second carrier formation, can be fixed to the semiconductor wafer 1 and to facilitate subsequent processing operations, for example using UV blue film vacuum chuck or the like. 本实施例中,第二载体7为UV膜。 In this embodiment, the second carrier film 7 is UV.

[0054] 第二有机试剂是第二键合剂5的专用清洗剂,本实施例中,第二有机试剂可以为正十二烷、甲苯的任意一种,但优先正十二烷,处理时间120-900秒。 [0054] The second key is a second organic reagent mixture for cleaning agent 5, in this embodiment, the second organic reagent may be n-dodecane, toluene, any one, but preferentially n-dodecane, processing time 120 -900 seconds.

[0055] 步骤S8中,在为半导体圆片1分离而施加外力的过程中通常以真空吸盘吸附第一载体片4,通过机械装置或者手工操作来控制力度,也可以使用楔形硬物嵌入第一键合剂2中辅助剥离第一载体片4。 [0055] In Step S8, in the process of separating the semiconductor wafer 1 and the external force is applied generally in the first vacuum chuck suction carrier sheet 4, to control the intensity by mechanical means or manual operation, it may also be used to embed the first hard wedge the key release agent in the first auxiliary carrier sheet 4. 本实施例中,楔形硬物为单面刀片8。 Embodiment, a single-sided hard object wedge insert 8 embodiment.

[0056] 下面以一个具体实施例来对本发明的技术方案作进一步的介绍。 [0056] In the following specific embodiments a further aspect of the present description of the invention.

[0057] 键合方法包括以下步骤: [0057] The bonding method comprising the steps of:

[0058] 步骤1:用丙酮清洗半导体圆片1和第一载体片4的表面; [0058] Step 1: cleaning a semiconductor wafer with acetone and the first surface of carrier sheet 1 of 4;

[0059] 步骤2:在半导体圆片1和第一载体片4的正面分别旋涂第一键合剂2作为临时键合粘接剂,转速lOOOrpm,时间60秒。 [0059] Step 2: 1 and the front surface of the first semiconductor wafer carrier sheet 4 are respectively a first bonding agent 2 was spin-coated as a temporary bonding adhesive, the rotational speed of lOOOrpm, 60 seconds. 然后,在热板上以115°C的温度烘烤90秒进行固化,单层TR2-50482的厚度约为14um ; Then, a hot plate at a temperature of 115 ° C bake cured for 90 seconds, the thickness of the single TR2-50482 about 14um;

[0060] 步骤3:待半导体圆片1和第一载体片4在室温下自然冷却后,将半导体圆片1和第一载体片4的正面相对,在温度为120°C、真空度小于5mbar、压力大于2个大气压的条件下进行键合120秒,形成半导体圆片1与第一载体片4的初步键合体; [0060] Step 3: After the semiconductor wafer 1 and the first carrier sheet 4 cooled at room temperature, the semiconductor wafer 1 and the front carrier sheet 4 opposite the first, at a temperature of 120 ° C, vacuum is less than 5mbar carried out under a pressure greater than the key 2 atmospheres engagement 120 seconds, the initial bond formation of a semiconductor wafer 1 and the first carrier sheet body 4;

[0061] 步骤4:将半导体圆片1与第一载体片4的初步键合体浸泡在第一有机试剂中75秒,去除半导体圆片1边缘往里约2mm深的环形第一键合剂2,形成缝隙3,从而形成半导体圆片1与第一载体片4的最终键合体,如图1所示; [0061] Step 4: The semiconductor wafer 1 and the first carrier sheet body 4 key initial first immersed in organic reagent 75 seconds, removing the semiconductor wafer 1 to about 2mm deep inside edge of the first annular bonding agent 2, slits 3 are formed, thereby forming the final wafer bond a semiconductor body 1 and the first carrier sheet 4, shown in Figure 1;

[0062] 步骤5:在半导体圆片1背面涂覆第二键合剂5,以填充步骤4中形成的细缝3,用来保护第一键合剂2并且增加半导体圆片1与第一载体片4的粘性,转速1500rpm,时间30秒。 [0062] Step 5: 1 in a semiconductor wafer back surface coated with a second bonding agent 5, the slit formed so as to fill the step 43, a first bonding agent for protecting the semiconductor wafer 2 and an increase of the first carrier sheet 4 viscosity, speed 1500rpm, 30 seconds. 然后,在热板上以155°C的温度烘烤120秒进行固化,如图2所示; Then, a hot plate at a temperature of 155 ° C cured 120 seconds baked, shown in Figure 2;

[0063] 步骤6:将半导体圆片1与第一载体片4的最终键合体减薄至40um后依次完成背面通孔、背面金属化以及背面划片槽腐蚀等工艺,如图3所示。 [0063] Step 6: thinning the semiconductor wafer 1 and the first carrier sheet 4 to a final key assembly in order to complete the back of the through-hole, the back surface and a rear surface metallization scribe 40um after etching and other processes, as shown in FIG.

[0064] 去键合方法包括以下步骤: [0064] debonding method comprising the steps of:

[0065] 步骤7:将步骤6中得到的完成背面工艺的半导体圆片1与第一载体片4的最终键合体浸泡在第二有机试剂中10分钟,去除第二键合剂5,露出缝隙3 ; [0065] Step 7: The back surface of a semiconductor wafer process is completed in step 6 a first carrier sheet 4 the final key body immersed in the second organic reagent for 10 minutes to remove the second bonding agent 5, the gap 3 is exposed ;

[0066] 步骤8:将步骤7得到的半导体圆片1背面贴在固定好的第二载体7上,用工具轻压第二载体7使之与半导体圆片1充分接触,并在第二载体7与第一载体片4之间嵌入单面刀片8,然后平放在多孔平台9上,如图4、图5所示; [0066] Step 8: back surface of the semiconductor wafer 1 obtained in step 7 is fixed on the second support 7 good, light pressure with the second tool carrier 7 so that sufficient contact with the semiconductor wafer 1, and a second carrier one surface of the blade 8 fitted between the carrier 47 and the first sheet, and a porous flat on the platform 9, FIG. 4, FIG. 5;

[0067] 步骤9:开启真空对第二载体7产生向下的吸力,真空吸力转化为半导体圆片1向下的拉力,而单面刀片8阻止第一载体片4下沉,给第一载体片4向上的阻力,当向上的阻力与向下的拉力超出第一键合剂2的弹性范围时,第一键合剂2开裂,第一载体片4与半导体圆片1分离,如图5所示; [0067] Step 9: 7 open vacuum to the second carrier a downward suction force, the semiconductor wafer vacuum suction into a downward pulling force, one side of the blade 8 and the carrier sheet 4 to prevent the first sink, to the first carrier up resistance sheet 4, when an upward and downward pulling force exceeds the resistance of the first bonding agent elastic range 2, the first bonding agent crack 2, the first carrier sheet 41 is separated from the semiconductor wafer, shown in Figure 5 ;

[0068] 步骤10:将分离好的半导体圆片1固定在清洗台上,用第一有机试剂清洗去除第一键合剂2,清洗后的半导体圆片1经划切形成划切细缝11,从而将半导体圆片1分割成独立的管芯,如图6所示。 [0068] Step 10: separating the semiconductor wafer 1 is fixed to a good washing stage, with a first reagent removed by washing the first organic bonding agent 2, after cleaning the semiconductor wafers 1 is formed by dicing the dicing slits 11, whereby the semiconductor wafer 1 is divided into individual dies, as shown in FIG.

[0069] 经过以上步骤实现超薄半导体圆片1的临时键合与去键合,此方法可以有效减少超薄半导体圆片1在背面工艺过程中特别是圆片分离、清洗及芯片划切等步骤中的裂片率,芯片成品率高;半导体圆片1的分离过程不用经过高温解蜡,半导体材料与背面金属6间不存在热胀冷缩系数不同导致的粘附力下降的问题。 [0069] After the above steps by which a thin semiconductor wafer and the temporary bonding is bonded to 1, this method can effectively reduce thin semiconductor wafer 1 separated from the back surface of the wafer particular process, cleaning and the like chip scribing lobes of step, high yield chips; semiconductor wafer separation process at high temperatures without a wax melting of the semiconductor material and the back metal 6 problem caused by different thermal expansion coefficients decrease adhesion does not exist.

Claims (9)

  1. 1.一种用于超薄半导体圆片的临时键合方法及去键合方法,其特征在于: 所述键合方法包括以下的步骤: 51:清洗半导体圆片(I)和第一载体片(4)的表面; 52:将半导体圆片(I)和第一载体片(4)的正面涂覆第一键合剂(2),并进行热烘固化; 53:将半导体圆片(I)和第一载体片(4)正面相对,通过第一键合剂(2)键合,形成半导体圆片(I)与第一载体片(4)的初步键合体; 54:将半导体圆片(I)与第一载体片(4)的键合体浸泡在第一有机试剂中,去除半导体圆片⑴边缘的第一键合剂(2),形成缝隙(3); 55:在步骤S4得到的半导体圆片(I)背面涂覆第二键合剂(5),以填充步骤S4形成的缝隙(3),并进行固化,形成半导体圆片(I)与第一载体片(4)的最终键合体; 所述去键合方法包括以下的步骤: 56:将半导体圆片(I)与第一载体片(4)的最终键合体浸泡在第二有机试剂中,去除半导体圆片⑴边缘的第二 Temporary bonding method and a method of bonding to a semiconductor wafer for an ultra-thin, wherein: said bonding method comprising the steps of: 51: cleaning a semiconductor wafer (I) and a first carrier sheet surface (4); 52: the front surface of the semiconductor wafer (I) and a first carrier sheet (4) coating the first bonding agent (2), heat drying and curing; 53: a semiconductor wafer (I) and a first carrier sheet (4) opposite the front side, the first bonding agent (2) is bonded, forming a semiconductor wafer (I) to a first support sheet (4) of the initial key body; 54: a semiconductor wafer (I ) to a first support sheet (4) of the key body immersed in a first organic reagent, removing the semiconductor wafer a first bonding agent (2) ⑴ edge, forming a gap (3); 55: semiconductor circle obtained in step S4 sheet (I) coating the back of the second bonding agent (5), slit (3), and cured to form a semiconductor wafer (I) to a first support sheet (4) to form a filling step S4 of the final laminate bond; the de-bonding method comprising the steps of: 56: semiconductor wafer (I) to a first support sheet (4) of the key body immersed in a second final organic reagent removed edge of the second semiconductor wafer ⑴ 合剂(5),以露出缝隙(3); 57:将步骤S6得到的半导体圆片(I)固定在第二载体(7)上,并将第二载体(7)放在可施加外力的平台上; 58:通过外力实现半导体圆片(I)与第一载体片(4)的分离; 59:使用第一有机试剂清洗步骤S8得到的半导体圆片(I),去除半导体圆片(I)表面的第一键合剂(2),得到去键合后的半导体圆片(I)。 Agent (5), to expose the slot (3); 57: a semiconductor wafer (I) obtained in step S6 is fixed to the second support (7), and a second carrier (7) on the platform can apply force on; 58: force to realize a semiconductor wafer (I) to a first support sheet (4) is isolated by; 59: semiconductor wafer (I) using a first cleaning step S8 organic reagent obtained, removing the semiconductor wafer (I) a first surface of the bonding agent (2), to obtain a semiconductor wafer (I) after debonding.
  2. 2.根据权利要求1所述的用于超薄半导体圆片的临时键合方法及去键合方法,其特征在于:所述半导体圆片(I)的材料为硅、砷化镓、磷化铟或者碳化硅中的任意一种。 The temporary bonding method and to a method for bonding thin semiconductor wafer according to claim 1, wherein: said semiconductor wafer material (I) is silicon, gallium arsenide, indium or any one of silicon carbide.
  3. 3.根据权利要求1所述的用于超薄半导体圆片的临时键合方法及去键合方法,其特征在于:所述第一载体片(4)不与第一键合剂(2)、第二键合剂(5)发生物理化学反应,并且第一载体片(4)采用可重复使用的材料;所述第一键合剂(2)、第二键合剂(5)不与半导体圆片⑴反应。 The method for temporary bonding of said thin semiconductor wafer 1 and to the bonding method as claimed in claim, wherein: said first carrier sheet (4) is not the first bonding agent (2), a second bonding agent (5) physical and chemical reaction occurs, and a first carrier sheet (4) use of reusable materials; the first bonding agent (2), the second bonding agent (5) and the semiconductor wafer is not ⑴ reaction.
  4. 4.根据权利要求1所述的用于超薄半导体圆片的临时键合方法及去键合方法,其特征在于:所述第一载体片(4)的尺寸比半导体圆片(I)的尺寸大。 The method for temporary bonding of said thin semiconductor wafer 1 and to the bonding method as claimed in claim, wherein: said first carrier sheet (4) of the semiconductor wafer than the dimension (I), size large.
  5. 5.根据权利要求1所述的用于超薄半导体圆片的临时键合方法及去键合方法,其特征在于:所述第一键合剂(2)的型号为SPACELIQUID TR2-50482。 The method for temporary bonding of said thin semiconductor wafer 1 and to the bonding method as claimed in claim, wherein: said first bonding agent (2), Model SPACELIQUID TR2-50482.
  6. 6.根据权利要求1所述的用于超薄半导体圆片的临时键合方法及去键合方法,其特征在于:所述第二键合剂(5)的型号为wafer bondiHTl0.10。 The method for temporary bonding of said thin semiconductor wafer 1 and to the bonding method as claimed in claim, wherein: said second bonding agent (5), Model wafer bondiHTl0.10.
  7. 7.根据权利要求1所述的用于超薄半导体圆片的临时键合方法及去键合方法,其特征在于:所述第一有机试剂为第一键合剂(2)的专用去除剂。 The method for temporary bonding of said thin semiconductor wafer 1 and to the bonding method as claimed in claim, wherein: said first agent is a first organic bonding agent (2) a special remover.
  8. 8.根据权利要求1所述的用于超薄半导体圆片的临时去键合方法及去键合方法,其特征在于:所述第二有机试剂为第二键合剂(5)的专用去除剂。 The provisional bonding to a method and to a method for bonding the ultra-thin semiconductor wafer according to claim 1, wherein: said second agent is a second organic bonding agent (5) special remover .
  9. 9.根据权利要求1所述的用于超薄半导体圆片的临时去键合方法及去键合方法,其特征在于:所述第二载体(7)采用平整、能够固定半导体圆片(I)的材料。 9. A method for temporary bonding to thin the semiconductor wafer 1 and the bonding method according to claim, wherein: said second support (7) The flat, can be fixed to the semiconductor wafer (I )s material.
CN 201510591118 2015-09-16 2015-09-16 Temporary bonding method and bonding-removing method for ultrathin semiconductor wafer CN105280541A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106449505A (en) * 2016-08-22 2017-02-22 中国电子科技集团公司第五十五研究所 Back technique for semiconductor ultrathin device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101925996A (en) * 2008-01-24 2010-12-22 布鲁尔科技公司 Method for reversibly mounting device wafer to carrier substrate
CN102326227A (en) * 2009-02-26 2012-01-18 信越半导体股份有限公司 Method for manufacturing soi wafer
US20120034437A1 (en) * 2010-08-06 2012-02-09 Brewer Science Inc. Multiple bonding layers for thin-wafer handling
CN102388431A (en) * 2009-03-18 2012-03-21 Ev集团有限责任公司 Device and method for detaching a wafer from a carrier
US20120241920A1 (en) * 2011-03-21 2012-09-27 Polar Semiconductor, Inc. Edge bead removal for polybenzoxazole (pbo)

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101925996A (en) * 2008-01-24 2010-12-22 布鲁尔科技公司 Method for reversibly mounting device wafer to carrier substrate
CN102326227A (en) * 2009-02-26 2012-01-18 信越半导体股份有限公司 Method for manufacturing soi wafer
CN102388431A (en) * 2009-03-18 2012-03-21 Ev集团有限责任公司 Device and method for detaching a wafer from a carrier
US20120034437A1 (en) * 2010-08-06 2012-02-09 Brewer Science Inc. Multiple bonding layers for thin-wafer handling
US20120241920A1 (en) * 2011-03-21 2012-09-27 Polar Semiconductor, Inc. Edge bead removal for polybenzoxazole (pbo)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106449505A (en) * 2016-08-22 2017-02-22 中国电子科技集团公司第五十五研究所 Back technique for semiconductor ultrathin device

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