IN2012DN02727A - - Google Patents
Download PDFInfo
- Publication number
- IN2012DN02727A IN2012DN02727A IN2727DEN2012A IN2012DN02727A IN 2012DN02727 A IN2012DN02727 A IN 2012DN02727A IN 2727DEN2012 A IN2727DEN2012 A IN 2727DEN2012A IN 2012DN02727 A IN2012DN02727 A IN 2012DN02727A
- Authority
- IN
- India
- Prior art keywords
- heat sink
- metal plate
- layer
- bonding
- solidifying
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W40/00—Arrangements for thermal protection or thermal control
- H10W40/20—Arrangements for cooling
- H10W40/25—Arrangements for cooling characterised by their materials
- H10W40/255—Arrangements for cooling characterised by their materials having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
- C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
- C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
- C04B37/026—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used consisting of metals or metal salts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W40/00—Arrangements for thermal protection or thermal control
- H10W40/40—Arrangements for thermal protection or thermal control involving heat exchange by flowing fluids
- H10W40/43—Arrangements for thermal protection or thermal control involving heat exchange by flowing fluids by flowing gases, e.g. forced air cooling
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W40/00—Arrangements for thermal protection or thermal control
- H10W40/40—Arrangements for thermal protection or thermal control involving heat exchange by flowing fluids
- H10W40/47—Arrangements for thermal protection or thermal control involving heat exchange by flowing fluids by flowing liquids, e.g. forced water cooling
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
- C04B2237/12—Metallic interlayers
- C04B2237/124—Metallic interlayers based on copper
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
- C04B2237/12—Metallic interlayers
- C04B2237/126—Metallic interlayers wherein the active component for bonding is not the largest fraction of the interlayer
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
- C04B2237/36—Non-oxidic
- C04B2237/366—Aluminium nitride
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/40—Metallic
- C04B2237/402—Aluminium
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
- C04B2237/704—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the ceramic layers or articles
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/30—Die-attach connectors
- H10W72/351—Materials of die-attach connectors
- H10W72/352—Materials of die-attach connectors comprising metals or metalloids, e.g. solders
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
- H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009208438 | 2009-09-09 | ||
| JP2009208439 | 2009-09-09 | ||
| JP2009252114 | 2009-11-02 | ||
| JP2009252115 | 2009-11-02 | ||
| PCT/JP2010/065316 WO2011030754A1 (ja) | 2009-09-09 | 2010-09-07 | ヒートシンク付パワーモジュール用基板の製造方法、ヒートシンク付パワーモジュール用基板及びパワーモジュール |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IN2012DN02727A true IN2012DN02727A (enExample) | 2015-09-11 |
Family
ID=43732426
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IN2727DEN2012 IN2012DN02727A (enExample) | 2009-09-09 | 2010-09-07 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9076755B2 (enExample) |
| EP (1) | EP2477217B1 (enExample) |
| KR (1) | KR101690820B1 (enExample) |
| CN (1) | CN102498564B (enExample) |
| IN (1) | IN2012DN02727A (enExample) |
| TW (1) | TWI521651B (enExample) |
| WO (1) | WO2011030754A1 (enExample) |
Families Citing this family (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103988297B (zh) * | 2011-12-12 | 2018-11-23 | 三菱综合材料株式会社 | 功率模块及其制造方法 |
| JP5403129B2 (ja) * | 2012-03-30 | 2014-01-29 | 三菱マテリアル株式会社 | パワーモジュール用基板、ヒートシンク付パワーモジュール用基板、パワーモジュール、及びパワーモジュール用基板の製造方法 |
| JP5918008B2 (ja) * | 2012-05-08 | 2016-05-18 | 昭和電工株式会社 | 冷却器の製造方法 |
| KR102051697B1 (ko) | 2012-09-21 | 2019-12-03 | 미쓰비시 마테리알 가부시키가이샤 | 알루미늄 부재와 구리 부재의 접합 구조 |
| IN2015DN03283A (enExample) * | 2012-10-16 | 2015-10-09 | Mitsubishi Materials Corp | |
| JP6307832B2 (ja) * | 2013-01-22 | 2018-04-11 | 三菱マテリアル株式会社 | パワーモジュール用基板、ヒートシンク付パワーモジュール用基板、ヒートシンク付パワーモジュール |
| JP2014165456A (ja) * | 2013-02-27 | 2014-09-08 | Fujitsu Mobile Communications Ltd | 電子機器及び電子機器のリアケース |
| JP6621076B2 (ja) * | 2013-03-29 | 2019-12-18 | 三菱マテリアル株式会社 | パワーモジュール用基板、ヒートシンク付パワーモジュール用基板及びパワーモジュール |
| US11574889B2 (en) * | 2013-06-04 | 2023-02-07 | Infineon Technologies Ag | Power module comprising two substrates and method of manufacturing the same |
| JP6079505B2 (ja) * | 2013-08-26 | 2017-02-15 | 三菱マテリアル株式会社 | 接合体及びパワーモジュール用基板 |
| CN105580131B (zh) * | 2013-10-10 | 2021-03-12 | 三菱综合材料株式会社 | 自带散热器的功率模块用基板及其制造方法 |
| JP6341822B2 (ja) * | 2014-09-26 | 2018-06-13 | 三菱電機株式会社 | 半導体装置 |
| JP6048558B2 (ja) * | 2014-10-16 | 2016-12-21 | 三菱マテリアル株式会社 | 冷却器付パワーモジュール用基板及びその製造方法 |
| CN105742252B (zh) * | 2014-12-09 | 2019-05-07 | 台达电子工业股份有限公司 | 一种功率模块及其制造方法 |
| US9693488B2 (en) * | 2015-02-13 | 2017-06-27 | Deere & Company | Electronic assembly with one or more heat sinks |
| JP6332108B2 (ja) * | 2015-03-30 | 2018-05-30 | 三菱マテリアル株式会社 | ヒートシンク付パワーモジュール用基板の製造方法 |
| CN104779228B (zh) * | 2015-04-14 | 2018-09-28 | 天津大学 | 一种功率半导体模块三维封装的结构和方法 |
| CN208369332U (zh) * | 2017-05-17 | 2019-01-11 | 德昌电机(深圳)有限公司 | 一种电机、电路板及应用该电机的引擎冷却模组 |
| KR102505443B1 (ko) * | 2017-11-16 | 2023-03-03 | 삼성전기주식회사 | 인쇄회로기판 |
| CN113133264B (zh) * | 2019-12-30 | 2023-06-23 | 惠州视维新技术有限公司 | 一种散热结构、散热结构的制作方法及显示装置 |
| EP3852138B1 (en) | 2020-01-20 | 2023-11-08 | Infineon Technologies Austria AG | An electronic module comprising a semiconductor package connected to a fluid heatsink |
| JP7363613B2 (ja) * | 2020-03-13 | 2023-10-18 | 三菱マテリアル株式会社 | ヒートシンク一体型絶縁回路基板 |
| KR20220154663A (ko) * | 2020-03-18 | 2022-11-22 | 미쓰비시 마테리알 가부시키가이샤 | 절연 회로 기판 |
| TWI759199B (zh) * | 2021-05-07 | 2022-03-21 | 艾姆勒車電股份有限公司 | 具有非矩形散熱層的散熱基材結構 |
| KR102593733B1 (ko) * | 2021-05-27 | 2023-10-25 | 주식회사 아모그린텍 | 히트싱크 일체형 세라믹 기판 및 그 제조방법 |
| KR102645303B1 (ko) * | 2021-07-09 | 2024-03-08 | 주식회사 아모센스 | 세라믹 기판 및 그 제조방법 |
| DE102021211544A1 (de) * | 2021-10-13 | 2023-04-13 | Robert Bosch Gesellschaft mit beschränkter Haftung | Kühlrippe eines fluiddurchströmbaren Kühlers zum Kühlen einer Leistungselektronik |
| JP7845477B2 (ja) * | 2022-03-17 | 2026-04-14 | 株式会社村田製作所 | 電源モジュールの冷却構造 |
| CN115020359A (zh) * | 2022-08-09 | 2022-09-06 | 成都复锦功率半导体技术发展有限公司 | 一种半导体芯片封装结构及其制备方法 |
Family Cites Families (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04187387A (ja) * | 1990-11-20 | 1992-07-06 | Sumitomo Metal Ind Ltd | 防振金属材料 |
| JPH0748180A (ja) * | 1993-08-03 | 1995-02-21 | Noritake Co Ltd | セラミックス−金属接合体 |
| EP0693776B1 (en) * | 1994-07-15 | 2000-05-31 | Mitsubishi Materials Corporation | Highly heat-radiating ceramic package |
| JP3933287B2 (ja) | 1998-01-30 | 2007-06-20 | 電気化学工業株式会社 | ヒートシンク付き回路基板 |
| JP2001010874A (ja) | 1999-03-27 | 2001-01-16 | Nippon Hybrid Technologies Kk | 無機材料とアルミニウムを含む金属との複合材料の製造方法とその関連する製品 |
| JP2001018074A (ja) | 1999-07-07 | 2001-01-23 | Sumitomo Metal Ind Ltd | アルミニウムクラッド材の製造方法 |
| JP2001168250A (ja) | 1999-12-10 | 2001-06-22 | Sumitomo Electric Ind Ltd | 半導体用絶縁基板およびそれを用いた半導体装置並びに該基板の製造方法 |
| JP2002009212A (ja) | 2000-06-23 | 2002-01-11 | Denki Kagaku Kogyo Kk | 放熱構造体の製造方法 |
| US7019975B2 (en) * | 2000-08-09 | 2006-03-28 | Mitsubishi Materials Corporation | Power module and power module with heat sink |
| JP4134537B2 (ja) | 2000-08-09 | 2008-08-20 | 三菱マテリアル株式会社 | パワーモジュール及びヒートシンク付パワーモジュール |
| JP2002203942A (ja) * | 2000-12-28 | 2002-07-19 | Fuji Electric Co Ltd | パワー半導体モジュール |
| KR20030072324A (ko) * | 2001-07-09 | 2003-09-13 | 이비덴 가부시키가이샤 | 세라믹 히터 및 세라믹 접합체 |
| DE10142615A1 (de) | 2001-08-31 | 2003-04-10 | Siemens Ag | Leistungselektronikeinheit |
| JP4360847B2 (ja) * | 2003-06-30 | 2009-11-11 | 日本特殊陶業株式会社 | セラミック回路基板、放熱モジュール、および半導体装置 |
| WO2005098942A1 (ja) * | 2004-04-05 | 2005-10-20 | Mitsubishi Materials Corporation | Ai/ain接合体、パワーモジュール用基板及びパワーモジュール並びにai/ain接合体の製造方法 |
| EP1858078A4 (en) * | 2005-01-20 | 2009-03-04 | Almt Corp | ELEMENT FOR A SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREFOR |
| JP4037425B2 (ja) * | 2005-07-04 | 2008-01-23 | 電気化学工業株式会社 | セラミック回路基板およびそれを用いた電力制御部品。 |
| KR20080065988A (ko) * | 2005-09-28 | 2008-07-15 | 니뽄 가이시 가부시키가이샤 | 히트싱크 모듈 및 그 제조방법 |
| EP1959493B1 (en) | 2005-12-08 | 2012-02-08 | Fujitsu Limited | Process for producing electronic part, process for producing heat conducting member, and method of mounting heat conducting member for electronic part |
| JPWO2007105361A1 (ja) * | 2006-03-08 | 2009-07-30 | 株式会社東芝 | 電子部品モジュール |
| US8030760B2 (en) * | 2006-12-05 | 2011-10-04 | Kabushiki Kaisha Toyota Jidoshokki | Semiconductor apparatus and manufacturing method thereof |
| WO2008075409A1 (ja) * | 2006-12-19 | 2008-06-26 | Kabushiki Kaisha Toyota Jidoshokki | パワーモジュール用ベース、パワーモジュール用ベースの製造方法及びパ ワーモジュール |
| JP4965242B2 (ja) * | 2006-12-27 | 2012-07-04 | 株式会社ティラド | アルミニューム製ヒートシンクの製造方法 |
| JP5145729B2 (ja) | 2007-02-26 | 2013-02-20 | 富士電機株式会社 | 半田接合方法およびそれを用いた半導体装置の製造方法 |
| JP4747315B2 (ja) * | 2007-11-19 | 2011-08-17 | 三菱マテリアル株式会社 | パワーモジュール用基板及びパワーモジュール |
| JP5294657B2 (ja) | 2008-03-06 | 2013-09-18 | キヤノン株式会社 | インクジェット記録ヘッド |
| JP4931842B2 (ja) | 2008-03-06 | 2012-05-16 | 富士フイルム株式会社 | 打滴装置および打滴方法 |
| JP2009252114A (ja) | 2008-04-09 | 2009-10-29 | Hitachi Ltd | ストレージシステム及びデータ退避方法 |
| JP4525787B2 (ja) | 2008-04-09 | 2010-08-18 | 富士ゼロックス株式会社 | 画像抽出装置、及び画像抽出プログラム |
| JP5515947B2 (ja) * | 2010-03-29 | 2014-06-11 | 株式会社豊田自動織機 | 冷却装置 |
-
2010
- 2010-09-07 IN IN2727DEN2012 patent/IN2012DN02727A/en unknown
- 2010-09-07 WO PCT/JP2010/065316 patent/WO2011030754A1/ja not_active Ceased
- 2010-09-07 KR KR1020127006068A patent/KR101690820B1/ko not_active Expired - Fee Related
- 2010-09-07 EP EP10815351.1A patent/EP2477217B1/en active Active
- 2010-09-07 TW TW099130193A patent/TWI521651B/zh not_active IP Right Cessation
- 2010-09-07 CN CN201080039784.9A patent/CN102498564B/zh not_active Expired - Fee Related
- 2010-09-07 US US13/394,923 patent/US9076755B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| WO2011030754A1 (ja) | 2011-03-17 |
| EP2477217A4 (en) | 2018-01-24 |
| EP2477217A1 (en) | 2012-07-18 |
| CN102498564B (zh) | 2015-08-26 |
| EP2477217B1 (en) | 2019-05-08 |
| US9076755B2 (en) | 2015-07-07 |
| KR101690820B1 (ko) | 2016-12-28 |
| TW201140764A (en) | 2011-11-16 |
| US20130010429A1 (en) | 2013-01-10 |
| CN102498564A (zh) | 2012-06-13 |
| TWI521651B (zh) | 2016-02-11 |
| KR20120062751A (ko) | 2012-06-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP2477217A4 (en) | Method for producing substrate for power module with heat sink, substrate for power module with heat sink, and power module | |
| MY201393A (en) | Photovoltaic cell and laminate metallization | |
| EP2492958A4 (en) | Substrate for power module, substrate with heat sink for power module, power module, method for producing substrate for power module, and method for producing substrate with heat sink for power module | |
| TW200746276A (en) | Method for bonding a semiconductor substrate to a metal substrate | |
| TW200833201A (en) | Wiring substrate and method for manufacturing the same | |
| JP2014175425A5 (enExample) | ||
| WO2009128679A3 (en) | Solar cell, method of forming emitter layer of solar cell, and method of manufacturing solar cell | |
| WO2009041506A1 (ja) | 導電体接続用部材及びその製造方法、接続構造、並びに、太陽電池モジュール | |
| EP1887107A3 (en) | A method of forming a component on a substrate | |
| WO2009054505A1 (ja) | 金属箔積層ポリイミド樹脂基板 | |
| TW200708241A (en) | Heat radiation member and production method for the same | |
| TW200503077A (en) | High-quality sgoi by oxidation near the alloy melting temperature | |
| TW200721410A (en) | Integrated circuit device incorporating metallurigacal bond to enhance thermal conduction to a heat sink | |
| WO2009001982A3 (en) | Metal-based photonic device package module and manufacturing method thereof | |
| WO2009108874A3 (en) | Method of manufacturing photovoltaic roofing tiles and photovoltaic rofing tiles | |
| WO2011124716A3 (de) | Verfahren zur herstellung eines photovoltaik-moduls mit rückseitenkontaktierten halbleiterzellen | |
| WO2009135073A3 (en) | System and method for aquifer geo-cooling | |
| WO2009028627A1 (ja) | Ledチップの実装方法 | |
| CN105405824B (zh) | 预制结构及其形成方法、和焊接半导体芯片布置的方法 | |
| MY155827A (en) | Surface-treated metal plate | |
| MX2012001479A (es) | Proceso de laminacion mejorado. | |
| EP2154710A3 (en) | Substrate joining method and 3-D semiconductor device | |
| WO2012116157A3 (en) | Chip module embedded in pcb substrate | |
| SG144031A1 (en) | Interconnect capping layer and method of fabrication | |
| WO2014026675A3 (de) | Verfahren zur herstellung von hohlkörpern, insbesondere von kühlern, und hohlkörper bzw. kühler enthaltende elektrische oder elektronische baugruppen |