IN2012DN02727A - - Google Patents
Download PDFInfo
- Publication number
- IN2012DN02727A IN2012DN02727A IN2727DEN2012A IN2012DN02727A IN 2012DN02727 A IN2012DN02727 A IN 2012DN02727A IN 2727DEN2012 A IN2727DEN2012 A IN 2727DEN2012A IN 2012DN02727 A IN2012DN02727 A IN 2012DN02727A
- Authority
- IN
- India
- Prior art keywords
- heat sink
- metal plate
- layer
- bonding
- solidifying
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
- C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
- C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
- C04B37/026—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used consisting of metals or metal salts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/467—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing gases, e.g. air
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
- C04B2237/12—Metallic interlayers
- C04B2237/124—Metallic interlayers based on copper
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
- C04B2237/12—Metallic interlayers
- C04B2237/126—Metallic interlayers wherein the active component for bonding is not the largest fraction of the interlayer
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
- C04B2237/36—Non-oxidic
- C04B2237/366—Aluminium nitride
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/40—Metallic
- C04B2237/402—Aluminium
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
- C04B2237/704—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the ceramic layers or articles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/29111—Tin [Sn] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
Abstract
A method for producing a substrate for a power module with a heat sink includes a heat sink bonding step for bonding a heat sink to the surface of a second metal plate. The heat sink bonding step includes: a Cu layer forming step for forming a Cu layer on at least one of the surface of the second metal plate and a bonding surface of the heat sink; a heat sink laminating step for laminating the second metal plate and the heat sink via the Cu layer; a heat sink heating step for pressing in the lamination direction and heating the second metal plate and the heat sink, to diffuse Cu in the Cu layer into the second metal plate and the heat sink; and a molten metal solidifying step for solidifying the molten metal formed with Cu diffusion, to bond the second metal plate and the heat sink.
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009208439 | 2009-09-09 | ||
JP2009208438 | 2009-09-09 | ||
JP2009252114 | 2009-11-02 | ||
JP2009252115 | 2009-11-02 | ||
PCT/JP2010/065316 WO2011030754A1 (en) | 2009-09-09 | 2010-09-07 | Method for producing substrate for power module with heat sink, substrate for power module with heat sink, and power module |
Publications (1)
Publication Number | Publication Date |
---|---|
IN2012DN02727A true IN2012DN02727A (en) | 2015-09-11 |
Family
ID=43732426
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IN2727DEN2012 IN2012DN02727A (en) | 2009-09-09 | 2010-09-07 |
Country Status (7)
Country | Link |
---|---|
US (1) | US9076755B2 (en) |
EP (1) | EP2477217B1 (en) |
KR (1) | KR101690820B1 (en) |
CN (1) | CN102498564B (en) |
IN (1) | IN2012DN02727A (en) |
TW (1) | TWI521651B (en) |
WO (1) | WO2011030754A1 (en) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103988297B (en) * | 2011-12-12 | 2018-11-23 | 三菱综合材料株式会社 | Power module and its manufacturing method |
JP5403129B2 (en) * | 2012-03-30 | 2014-01-29 | 三菱マテリアル株式会社 | Power module substrate, power module substrate with heat sink, power module, and method for manufacturing power module substrate |
JP5918008B2 (en) * | 2012-05-08 | 2016-05-18 | 昭和電工株式会社 | Manufacturing method of cooler |
KR102051697B1 (en) | 2012-09-21 | 2019-12-03 | 미쓰비시 마테리알 가부시키가이샤 | Bonding structure for aluminum member and copper member |
WO2014061588A1 (en) * | 2012-10-16 | 2014-04-24 | 三菱マテリアル株式会社 | Substrate for power module with heat sink, power module with heat sink, and method for producing substrate for power module with heat sink |
JP6307832B2 (en) * | 2013-01-22 | 2018-04-11 | 三菱マテリアル株式会社 | Power module board, power module board with heat sink, power module with heat sink |
JP2014165456A (en) * | 2013-02-27 | 2014-09-08 | Fujitsu Mobile Communications Ltd | Electronic apparatus, and rear case for electronic apparatus |
JP6621076B2 (en) * | 2013-03-29 | 2019-12-18 | 三菱マテリアル株式会社 | Power module substrate, power module substrate with heat sink, and power module |
US11574889B2 (en) * | 2013-06-04 | 2023-02-07 | Infineon Technologies Ag | Power module comprising two substrates and method of manufacturing the same |
JP6079505B2 (en) * | 2013-08-26 | 2017-02-15 | 三菱マテリアル株式会社 | Bonded body and power module substrate |
EP3057125B1 (en) * | 2013-10-10 | 2020-09-30 | Mitsubishi Materials Corporation | Substrate for heat sink-equipped power module, and production method for same |
JP6341822B2 (en) * | 2014-09-26 | 2018-06-13 | 三菱電機株式会社 | Semiconductor device |
EP3208839B1 (en) * | 2014-10-16 | 2021-07-28 | Mitsubishi Materials Corporation | Substrate with cooler for power modules and method for producing same |
CN105742252B (en) * | 2014-12-09 | 2019-05-07 | 台达电子工业股份有限公司 | A kind of power module and its manufacturing method |
US9693488B2 (en) * | 2015-02-13 | 2017-06-27 | Deere & Company | Electronic assembly with one or more heat sinks |
JP6332108B2 (en) * | 2015-03-30 | 2018-05-30 | 三菱マテリアル株式会社 | Manufacturing method of power module substrate with heat sink |
CN104779228B (en) * | 2015-04-14 | 2018-09-28 | 天津大学 | A kind of structures and methods of power semiconductor modular three-dimension packaging |
CN208369332U (en) * | 2017-05-17 | 2019-01-11 | 德昌电机(深圳)有限公司 | A kind of engine cooling mould group of motor, the circuit board and application motor |
KR102505443B1 (en) * | 2017-11-16 | 2023-03-03 | 삼성전기주식회사 | Printed circuit board |
CN113133264B (en) * | 2019-12-30 | 2023-06-23 | 惠州视维新技术有限公司 | Heat dissipation structure, manufacturing method of heat dissipation structure and display device |
EP3852138B1 (en) | 2020-01-20 | 2023-11-08 | Infineon Technologies Austria AG | An electronic module comprising a semiconductor package connected to a fluid heatsink |
TWI759199B (en) * | 2021-05-07 | 2022-03-21 | 艾姆勒車電股份有限公司 | Thermal conductive substrate structure with a non-rectangular heat-dissipation layer |
KR102593733B1 (en) * | 2021-05-27 | 2023-10-25 | 주식회사 아모그린텍 | Ceramic substrate with heat sink and manufacturing method thereof |
KR102645303B1 (en) * | 2021-07-09 | 2024-03-08 | 주식회사 아모센스 | Ceramic substrate and manufacturing method thereof |
WO2023177474A1 (en) * | 2022-03-17 | 2023-09-21 | Murata Manufacturing Co., Ltd. | Cooling structure of a power supply module |
CN115020359A (en) * | 2022-08-09 | 2022-09-06 | 成都复锦功率半导体技术发展有限公司 | Semiconductor chip packaging structure and preparation method thereof |
Family Cites Families (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04187387A (en) * | 1990-11-20 | 1992-07-06 | Sumitomo Metal Ind Ltd | Vibration-proof metallic material |
JPH0748180A (en) * | 1993-08-03 | 1995-02-21 | Noritake Co Ltd | Ceramic-metal conjugate |
DE69517248T2 (en) * | 1994-07-15 | 2000-10-12 | Mitsubishi Materials Corp | Ceramic housing with high heat radiation |
JP3933287B2 (en) | 1998-01-30 | 2007-06-20 | 電気化学工業株式会社 | Circuit board with heat sink |
JP2001010874A (en) | 1999-03-27 | 2001-01-16 | Nippon Hybrid Technologies Kk | Production of composite material of inorganic material with metal containing aluminum and product related to the same |
JP2001018074A (en) | 1999-07-07 | 2001-01-23 | Sumitomo Metal Ind Ltd | Manufacture of aluminum clad material |
JP2001168250A (en) | 1999-12-10 | 2001-06-22 | Sumitomo Electric Ind Ltd | Insulating substrate for semiconductor device, semiconductor device using that and manufacturing method of substrate |
JP2002009212A (en) | 2000-06-23 | 2002-01-11 | Denki Kagaku Kogyo Kk | Method for manufacturing heat dissipation structure |
EP1315205A4 (en) * | 2000-08-09 | 2009-04-01 | Mitsubishi Materials Corp | Power module and power module with heat sink |
JP4134537B2 (en) * | 2000-08-09 | 2008-08-20 | 三菱マテリアル株式会社 | Power module and power module with heat sink |
JP2002203942A (en) * | 2000-12-28 | 2002-07-19 | Fuji Electric Co Ltd | Power semiconductor module |
KR20030072324A (en) | 2001-07-09 | 2003-09-13 | 이비덴 가부시키가이샤 | Ceramic heater and ceramic joined article |
DE10142615A1 (en) * | 2001-08-31 | 2003-04-10 | Siemens Ag | Power electronics unit |
JP4360847B2 (en) | 2003-06-30 | 2009-11-11 | 日本特殊陶業株式会社 | Ceramic circuit board, heat dissipation module, and semiconductor device |
KR20110124372A (en) * | 2004-04-05 | 2011-11-16 | 미쓰비시 마테리알 가부시키가이샤 | Al/aln joint material, base plate for power module, power module and process for producing al/aln joint material |
JP4913605B2 (en) * | 2005-01-20 | 2012-04-11 | 株式会社アライドマテリアル | Method for manufacturing member for semiconductor device |
JP4037425B2 (en) * | 2005-07-04 | 2008-01-23 | 電気化学工業株式会社 | Ceramic circuit board and power control component using the same. |
KR20080065988A (en) * | 2005-09-28 | 2008-07-15 | 니뽄 가이시 가부시키가이샤 | Heat sink module and process for producing the same |
CN100593238C (en) * | 2005-12-08 | 2010-03-03 | 富士通株式会社 | Method for manufacturing electronic component and thermal conduction component as well as method for installing thermal conduction component for electronic component |
EP2006895B1 (en) * | 2006-03-08 | 2019-09-18 | Kabushiki Kaisha Toshiba | Electronic component module |
US8030760B2 (en) * | 2006-12-05 | 2011-10-04 | Kabushiki Kaisha Toyota Jidoshokki | Semiconductor apparatus and manufacturing method thereof |
WO2008075409A1 (en) * | 2006-12-19 | 2008-06-26 | Kabushiki Kaisha Toyota Jidoshokki | Base for power module, method for producing base for power module and power module |
JP4965242B2 (en) * | 2006-12-27 | 2012-07-04 | 株式会社ティラド | Manufacturing method of aluminum heat sink |
JP5145729B2 (en) * | 2007-02-26 | 2013-02-20 | 富士電機株式会社 | Solder bonding method and semiconductor device manufacturing method using the same |
JP4747315B2 (en) * | 2007-11-19 | 2011-08-17 | 三菱マテリアル株式会社 | Power module substrate and power module |
JP4931842B2 (en) | 2008-03-06 | 2012-05-16 | 富士フイルム株式会社 | Droplet ejection apparatus and droplet ejection method |
JP5294657B2 (en) | 2008-03-06 | 2013-09-18 | キヤノン株式会社 | Inkjet recording head |
JP4525787B2 (en) | 2008-04-09 | 2010-08-18 | 富士ゼロックス株式会社 | Image extraction apparatus and image extraction program |
JP2009252114A (en) | 2008-04-09 | 2009-10-29 | Hitachi Ltd | Storage system and data saving method |
JP5515947B2 (en) * | 2010-03-29 | 2014-06-11 | 株式会社豊田自動織機 | Cooling system |
-
2010
- 2010-09-07 KR KR1020127006068A patent/KR101690820B1/en active IP Right Grant
- 2010-09-07 CN CN201080039784.9A patent/CN102498564B/en active Active
- 2010-09-07 US US13/394,923 patent/US9076755B2/en active Active
- 2010-09-07 TW TW099130193A patent/TWI521651B/en active
- 2010-09-07 WO PCT/JP2010/065316 patent/WO2011030754A1/en active Application Filing
- 2010-09-07 IN IN2727DEN2012 patent/IN2012DN02727A/en unknown
- 2010-09-07 EP EP10815351.1A patent/EP2477217B1/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN102498564A (en) | 2012-06-13 |
US9076755B2 (en) | 2015-07-07 |
EP2477217B1 (en) | 2019-05-08 |
WO2011030754A1 (en) | 2011-03-17 |
EP2477217A1 (en) | 2012-07-18 |
KR20120062751A (en) | 2012-06-14 |
TWI521651B (en) | 2016-02-11 |
CN102498564B (en) | 2015-08-26 |
TW201140764A (en) | 2011-11-16 |
EP2477217A4 (en) | 2018-01-24 |
US20130010429A1 (en) | 2013-01-10 |
KR101690820B1 (en) | 2016-12-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
IN2012DN02727A (en) | ||
IL200728A0 (en) | Method for the production of a solar cell and solar cell produced using said method | |
WO2011049812A3 (en) | Composite shoe upper and method of making same | |
WO2010085113A3 (en) | Novel ductile metal foil laminate and method for producing the same | |
EP2811513A4 (en) | Substrate for power modules, substrate with heat sink for power modules, power module, method for producing substrate for power modules, and paste for bonding copper member | |
IN2014DN08073A (en) | ||
EP2930744A4 (en) | Substrate for power modules, substrate with heat sink for power modules, power module, method for producing substrate for power modules, paste for copper plate bonding, and method for producing bonded body | |
WO2009128679A3 (en) | Solar cell, method of forming emitter layer of solar cell, and method of manufacturing solar cell | |
EP2492958A4 (en) | Substrate for power module, substrate with heat sink for power module, power module, method for producing substrate for power module, and method for producing substrate with heat sink for power module | |
MY147431A (en) | Copper foil with carrier sheet, method for manufacturing copper foil with carrier sheet, surface-treated copper foil with carrier sheet and copper-clad laminate using the surface-treated copper foil with carrier sheet | |
TW200833201A (en) | Wiring substrate and method for manufacturing the same | |
EP1887107A3 (en) | A method of forming a component on a substrate | |
TW200708241A (en) | Heat radiation member and production method for the same | |
TW200721410A (en) | Integrated circuit device incorporating metallurigacal bond to enhance thermal conduction to a heat sink | |
WO2009066692A1 (en) | Process for producing substrate for power module, substrate for power module, and power module | |
WO2009001982A3 (en) | Metal-based photonic device package module and manufacturing method thereof | |
IN2012DN04891A (en) | ||
EP2139027A4 (en) | Adhesive film for semiconductor, composite sheet, and method for producing semiconductor chip using them | |
WO2011124716A3 (en) | Method for producing a photovoltaic module comprising semiconductor cells contact-connected on the rear side | |
WO2008126206A1 (en) | Process for producing semiconductor device | |
WO2009028627A1 (en) | Led chip mounting method | |
WO2009092799A3 (en) | Object comprising a graphics element transferred onto a support wafer and method of producing such an object | |
WO2009108874A3 (en) | Method of manufacturing photovoltaic roofing tiles and photovoltaic rofing tiles | |
MX2012001479A (en) | Lamination process improvement. | |
EP2154710A3 (en) | Substrate joining method and 3-D semiconductor device |