WO2011124716A3 - Verfahren zur herstellung eines photovoltaik-moduls mit rückseitenkontaktierten halbleiterzellen - Google Patents

Verfahren zur herstellung eines photovoltaik-moduls mit rückseitenkontaktierten halbleiterzellen Download PDF

Info

Publication number
WO2011124716A3
WO2011124716A3 PCT/EP2011/055575 EP2011055575W WO2011124716A3 WO 2011124716 A3 WO2011124716 A3 WO 2011124716A3 EP 2011055575 W EP2011055575 W EP 2011055575W WO 2011124716 A3 WO2011124716 A3 WO 2011124716A3
Authority
WO
WIPO (PCT)
Prior art keywords
contact
carrier
semiconductor cells
producing
rear side
Prior art date
Application number
PCT/EP2011/055575
Other languages
English (en)
French (fr)
Other versions
WO2011124716A2 (de
Inventor
Ulrich Schaaf
Andreas Kugler
Martin Zippel
Patrick Stihler
Metin Koyuncu
Original Assignee
Robert Bosch Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch Gmbh filed Critical Robert Bosch Gmbh
Priority to EP11712894A priority Critical patent/EP2556546A2/de
Priority to CN201180017973.0A priority patent/CN102822989B/zh
Priority to KR1020127026061A priority patent/KR20130050285A/ko
Priority to US13/640,145 priority patent/US20130087181A1/en
Priority to JP2013503140A priority patent/JP5655236B2/ja
Publication of WO2011124716A2 publication Critical patent/WO2011124716A2/de
Publication of WO2011124716A3 publication Critical patent/WO2011124716A3/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042PV modules or arrays of single PV cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • H01L21/268Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022408Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022433Particular geometry of the grid contacts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042PV modules or arrays of single PV cells
    • H01L31/048Encapsulation of modules
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042PV modules or arrays of single PV cells
    • H01L31/05Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042PV modules or arrays of single PV cells
    • H01L31/05Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • H01L31/0516Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module specially adapted for interconnection of back-contact solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1876Particular processes or apparatus for batch treatment of the devices
    • H01L31/188Apparatus specially adapted for automatic interconnection of solar cells in a module
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/547Monocrystalline silicon PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Sustainable Development (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Die Erfindung betrifft ein Verfahren zur Herstellung eines Photovoltaik-Moduls mit rückseitenkontaktierten Halbleiterzellen (1) mit jeweils auf einer Kontaktseite (2) vorgesehenen Kontaktbereichen (3), mit folgenden Verfahrensschritten: Bereitstellen eines nichtleitenden folienartigen Trägers (4), Aufsetzen der Kontaktseiten der Halbleiterzellen auf den Träger, Ausführen eines den Träger durchbrechenden Laserbohrens zum Erzeugen von Durchbrüchen (10) auf den Kontaktbereichen (3) der Kontaktseiten (2) der Halbleiterzellen (1), Aufbringen eines Kontaktiermittels (11) auf den Träger zum Verfüllen der Durchbrüche und zum Ausbilden einer auf dem Träger verlaufenden Kontaktierungsschicht.
PCT/EP2011/055575 2010-04-08 2011-04-08 Verfahren zur herstellung eines photovoltaik-moduls mit rückseitenkontaktierten halbleiterzellen WO2011124716A2 (de)

Priority Applications (5)

Application Number Priority Date Filing Date Title
EP11712894A EP2556546A2 (de) 2010-04-08 2011-04-08 Verfahren zur herstellung eines photovoltaik-moduls mit rückseitenkontaktierten halbleiterzellen
CN201180017973.0A CN102822989B (zh) 2010-04-08 2011-04-08 用于制造具有背侧接触半导体电池的光生伏打模块的方法
KR1020127026061A KR20130050285A (ko) 2010-04-08 2011-04-08 후면 콘택팅 방식 반도체 셀을 포함하는 태양광 모듈의 제조 방법
US13/640,145 US20130087181A1 (en) 2010-04-08 2011-04-08 Method for producing a photovoltaic module having backside-contacted semiconductor cells
JP2013503140A JP5655236B2 (ja) 2010-04-08 2011-04-08 それぞれ後面でコンタクトされる複数の半導体セルを備えた光起電モジュールの製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102010003765A DE102010003765A1 (de) 2010-04-08 2010-04-08 Verfahren zur Herstellung eines Photovoltaik-Moduls mit rückseitenkontaktierten Halbleiterzellen
DE102010003765.6 2010-04-08

Publications (2)

Publication Number Publication Date
WO2011124716A2 WO2011124716A2 (de) 2011-10-13
WO2011124716A3 true WO2011124716A3 (de) 2012-01-12

Family

ID=44625731

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2011/055575 WO2011124716A2 (de) 2010-04-08 2011-04-08 Verfahren zur herstellung eines photovoltaik-moduls mit rückseitenkontaktierten halbleiterzellen

Country Status (7)

Country Link
US (1) US20130087181A1 (de)
EP (1) EP2556546A2 (de)
JP (1) JP5655236B2 (de)
KR (1) KR20130050285A (de)
CN (1) CN102822989B (de)
DE (1) DE102010003765A1 (de)
WO (1) WO2011124716A2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE202011052268U1 (de) * 2011-12-12 2012-01-25 Sitec Solar Gmbh Halbzeug für ein Modul mit einer Zelle aus photoaktivem Material
DE102011088476A1 (de) * 2011-12-14 2013-06-20 Robert Bosch Gmbh Solarmodul und Verfahren zur Herstellung eines solchen
DE102012224432A1 (de) * 2012-12-27 2014-04-10 Robert Bosch Gmbh Elektrische Schaltung und Verfahren zum Herstellen einer elektrischen Schaltung
DE102013205094A1 (de) 2013-03-22 2014-09-25 Robert Bosch Gmbh Solarmodul und Verfahren zur Herstellung eines solchen
DE102013206629A1 (de) 2013-04-15 2014-10-30 Robert Bosch Gmbh Verfahren zur Herstellung eines Solarmoduls
NL2012563B1 (en) * 2014-04-03 2016-03-08 Stichting Energieonderzoek Centrum Nederland Solar cell module and method manufacturing such a module.
EP3162427A1 (de) * 2015-10-28 2017-05-03 Casale SA Verfahren und vorrichtung zum entfernen von nox und n2o aus einem gas
AU2017337293A1 (en) * 2016-09-30 2019-05-16 Greatcell Energy Limited A solar module and a method of fabricating a solar module
US20200061536A1 (en) 2016-10-28 2020-02-27 Casale Sa A method for removing nitrogen oxides from a gas using an iron exchanged zeolite catalyst
RU2695277C1 (ru) * 2019-02-12 2019-07-22 Общество С Ограниченной Ответственностью "Товарищество Энергетических И Электромобильных Проектов" Способ изготовления гибкого фотоэлектрического модуля

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5584956A (en) * 1992-12-09 1996-12-17 University Of Iowa Research Foundation Method for producing conductive or insulating feedthroughs in a substrate
JP2000196116A (ja) * 1998-12-28 2000-07-14 Sony Corp 集積型薄膜素子およびその製造方法
DE102006052018A1 (de) * 2006-11-03 2008-05-15 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Solarzelle und Solarzellenmodul mit verbesserten Rückseiten-Elektroden sowie Verfahren und Herstellung
US20090065043A1 (en) * 2006-02-22 2009-03-12 Jean-Christophe Hadorn Method of coupling photovoltaic cells and film for implementing it
DE102008044910A1 (de) * 2008-08-30 2010-03-04 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Solarzelle und Solarzellenmodul mit einseitiger Verschaltung

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5394194A (en) * 1977-01-28 1978-08-17 Toshiba Corp Substrate for photoelectric transducer
JPS6120371A (ja) * 1984-07-06 1986-01-29 Sanyo Electric Co Ltd 光起電力装置
US5972732A (en) * 1997-12-19 1999-10-26 Sandia Corporation Method of monolithic module assembly
US6300593B1 (en) * 1999-12-07 2001-10-09 First Solar, Llc Apparatus and method for laser scribing a coated substrate
US6476314B2 (en) * 2001-03-20 2002-11-05 The Boeing Company Solar tile and associated method for fabricating the same
US6660930B1 (en) * 2002-06-12 2003-12-09 Rwe Schott Solar, Inc. Solar cell modules with improved backskin
US20080105303A1 (en) * 2003-01-03 2008-05-08 Bp Corporation North America Inc. Method and Manufacturing Thin Film Photovoltaic Modules
JP2004261924A (ja) * 2003-03-03 2004-09-24 Seiko Precision Inc 板状ワークの穴明け装置および穴明け方法
US7091124B2 (en) * 2003-11-13 2006-08-15 Micron Technology, Inc. Methods for forming vias in microelectronic devices, and methods for packaging microelectronic devices
US8115096B2 (en) * 2007-06-18 2012-02-14 E-Cube Technologies, Ltd. Methods and apparatuses for improving power extraction from solar cells
US20090050190A1 (en) * 2007-08-24 2009-02-26 Sanyo Electric Co., Ltd. Solar cell and solar cell module
CN101874304B (zh) * 2007-11-22 2012-07-18 夏普株式会社 元件间布线构件、光电转换元件及使用其的光电转换元件连接体和光电转换组件
JP2009182244A (ja) * 2008-01-31 2009-08-13 Sharp Corp 太陽電池モジュールの製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5584956A (en) * 1992-12-09 1996-12-17 University Of Iowa Research Foundation Method for producing conductive or insulating feedthroughs in a substrate
JP2000196116A (ja) * 1998-12-28 2000-07-14 Sony Corp 集積型薄膜素子およびその製造方法
US20090065043A1 (en) * 2006-02-22 2009-03-12 Jean-Christophe Hadorn Method of coupling photovoltaic cells and film for implementing it
DE102006052018A1 (de) * 2006-11-03 2008-05-15 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Solarzelle und Solarzellenmodul mit verbesserten Rückseiten-Elektroden sowie Verfahren und Herstellung
DE102008044910A1 (de) * 2008-08-30 2010-03-04 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Solarzelle und Solarzellenmodul mit einseitiger Verschaltung

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
VAN KERSCHAVER E ET AL: "Back-contact solar cells: a review", PROGRESS IN PHOTOVOLTAICS. RESEARCH AND APPLICATIONS, JOHN WILEY AND SONS, CHICHESTER, GB, vol. 14, no. 2, 1 March 2006 (2006-03-01), pages 107 - 123, XP002577679, ISSN: 1062-7995, [retrieved on 20051220], DOI: 10.1002/PIP.657 *

Also Published As

Publication number Publication date
KR20130050285A (ko) 2013-05-15
US20130087181A1 (en) 2013-04-11
JP2013527976A (ja) 2013-07-04
WO2011124716A2 (de) 2011-10-13
CN102822989B (zh) 2016-03-23
EP2556546A2 (de) 2013-02-13
DE102010003765A1 (de) 2011-10-13
JP5655236B2 (ja) 2015-01-21
CN102822989A (zh) 2012-12-12

Similar Documents

Publication Publication Date Title
WO2011124716A3 (de) Verfahren zur herstellung eines photovoltaik-moduls mit rückseitenkontaktierten halbleiterzellen
WO2011128001A3 (de) Verfahren zur herstellung eines photovoltaikmoduls mit rückseitenkontaktierten halbleiterzellen und photovoltaikmodul
PH12013000318A1 (en) Semiconductor die singulation method and apparatus
IL197449A0 (en) Packaging for active substance-containing films and method for producing them
WO2012108627A3 (en) Light emitting diode having photonic crystal structure and method of fabricating the same
WO2012006063A3 (en) Microelectronic package and method of manufacturing same
TW201130173A (en) Semiconductor light emitting device and method for manufacturing same
WO2012044978A3 (en) High efficiency solar cell device with gallium arsenide absorber layer
TW201612949A (en) Method for permanent bonding of wafers
MY167855A (en) Composition for forming n-type diffusion layer, method for forming n-type diffusion layer, and method for producing photovoltaic cell
WO2009059128A3 (en) Crystalline-thin-film photovoltaic structures and methods for forming the same
GB2417133B (en) Method for fabricating lateral semiconductor device
WO2013168634A8 (ja) 転写方法及び熱ナノインプリント装置
EP2477244A3 (de) Verpackung für lichtemittierende Vorrichtung auf Waferebene und Verfahren zu deren Herstellung
WO2011087361A3 (en) Foil shaped electro-optical product, semi-finished product and method and apparatus for manufacturing the same
MX2009008109A (es) Celulas solares organicas hibridas con nanoparticulas semiconductoras rodeadas de modificadores de la superficie fotoactivos.
EP2605296A3 (de) Lichtemittierende Vorrichtung
WO2014025722A3 (en) Method and system for gallium nitride electronic devices using engineered substrates
WO2006074175A3 (en) Method and structure for forming an integrated spatial light modulator
WO2013152275A3 (en) Hole carrier layer for organic photovoltaic device
WO2013070454A3 (en) Apparatus and methods for enhancing photovoltaic efficiency
WO2014044871A3 (fr) Cellule photovoltaique a heterojonction et procede de fabrication d'une telle cellule
WO2011043609A3 (ko) 태양광 발전장치 및 이의 제조방법
WO2012045511A3 (de) Verfahren zur herstellung einer silikonfolie, silikonfolie und optoelektronisches halbleiterbauteil mit einer silikonfolie
WO2011002212A3 (ko) 태양광 발전장치 및 이의 제조방법

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 201180017973.0

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 11712894

Country of ref document: EP

Kind code of ref document: A2

WWE Wipo information: entry into national phase

Ref document number: 2011712894

Country of ref document: EP

ENP Entry into the national phase

Ref document number: 20127026061

Country of ref document: KR

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 8703/DELNP/2012

Country of ref document: IN

WWE Wipo information: entry into national phase

Ref document number: 2013503140

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 13640145

Country of ref document: US