WO2011128001A3 - Verfahren zur herstellung eines photovoltaikmoduls mit rückseitenkontaktierten halbleiterzellen und photovoltaikmodul - Google Patents

Verfahren zur herstellung eines photovoltaikmoduls mit rückseitenkontaktierten halbleiterzellen und photovoltaikmodul Download PDF

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Publication number
WO2011128001A3
WO2011128001A3 PCT/EP2010/066122 EP2010066122W WO2011128001A3 WO 2011128001 A3 WO2011128001 A3 WO 2011128001A3 EP 2010066122 W EP2010066122 W EP 2010066122W WO 2011128001 A3 WO2011128001 A3 WO 2011128001A3
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WO
WIPO (PCT)
Prior art keywords
carrier
contact
photovoltaic module
semiconductor cells
producing
Prior art date
Application number
PCT/EP2010/066122
Other languages
English (en)
French (fr)
Other versions
WO2011128001A2 (de
Inventor
Ulrich Schaaf
Andreas Kugler
Patrick Zerrer
Martin Zippel
Patrick Stihler
Metin Koyuncu
Original Assignee
Robert Bosch Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch Gmbh filed Critical Robert Bosch Gmbh
Priority to CN2010800661451A priority Critical patent/CN102834924A/zh
Priority to EP10774178A priority patent/EP2559058A2/de
Priority to KR1020127029692A priority patent/KR101676078B1/ko
Priority to JP2013504137A priority patent/JP5655212B2/ja
Priority to US13/640,878 priority patent/US20130104957A1/en
Publication of WO2011128001A2 publication Critical patent/WO2011128001A2/de
Publication of WO2011128001A3 publication Critical patent/WO2011128001A3/de

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022433—Particular geometry of the grid contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • H01L31/0516—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module specially adapted for interconnection of back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Sustainable Development (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Optics & Photonics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Di e Erfindung betrifft ein Verfahren zur Herstellung eines Photovoltaikmoduls mit rückseitenkontaktierten Halbleiterzellen (1) mit jeweils auf einer Kontaktseite (2) vorgesehenen Kontaktbereichen (3) mit den Verfahrensschritten : Bereitstellen eines folienartigen nichtleitenden Trägers (4) mit einer mindestens einseitigen und mindestens abschnittsweisen elektrisch leitfähigen Trägerbeschichtung (5) auf einer ersten Trägerseite, Auf setzen der Kontakt seit en der Halbleiterzellen auf eine zweite Trägerseite, Ausführen einer den Träger und die Trägerbeschichtung durchbrechenden lokalen Perforation zum Erzeugen von Durchbrüchen (10) an den Kontaktbereichen (3) der Halbleiterzellen (1), Aufbringen eines Kontaktiermittels (11) zum Verfüllen der Durchbrüche (10) und zum Ausbilden einer Kontaktierung zwischen der Trägerbeschichtung auf der ersten Trägerseite und den Halbleiterzellen auf der zweit en Trägerseite.
PCT/EP2010/066122 2010-04-14 2010-10-26 Verfahren zur herstellung eines photovoltaikmoduls mit rückseitenkontaktierten halbleiterzellen und photovoltaikmodul WO2011128001A2 (de)

Priority Applications (5)

Application Number Priority Date Filing Date Title
CN2010800661451A CN102834924A (zh) 2010-04-14 2010-10-26 制造带有背侧接触的半导体电池的光伏模块的方法和光伏模块
EP10774178A EP2559058A2 (de) 2010-04-14 2010-10-26 Verfahren zur herstellung eines photovoltaikmoduls mit rückseitenkontaktierten halbleiterzellen und photovoltaikmodul
KR1020127029692A KR101676078B1 (ko) 2010-04-14 2010-10-26 후면 접촉식 반도체 셀을 포함하는 태양 전지 모듈의 제조 방법 및 태양 전지 모듈
JP2013504137A JP5655212B2 (ja) 2010-04-14 2010-10-26 裏面接続された半導体セルを備える光電池モジュールの製造方法および光電池モジュール
US13/640,878 US20130104957A1 (en) 2010-04-14 2010-10-26 Method for producing a photovoltaic module having backside-contacted semiconductor cells, and photovoltaic module

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102010027747A DE102010027747A1 (de) 2010-04-14 2010-04-14 Verfahren zur Herstellung eines Photovoltaikmoduls mit rückseitenkontaktierten Halbleiterzellen und Photovoltaikmodul
DE102010027747.9 2010-04-14

Publications (2)

Publication Number Publication Date
WO2011128001A2 WO2011128001A2 (de) 2011-10-20
WO2011128001A3 true WO2011128001A3 (de) 2011-12-22

Family

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PCT/EP2010/066122 WO2011128001A2 (de) 2010-04-14 2010-10-26 Verfahren zur herstellung eines photovoltaikmoduls mit rückseitenkontaktierten halbleiterzellen und photovoltaikmodul

Country Status (7)

Country Link
US (1) US20130104957A1 (de)
EP (1) EP2559058A2 (de)
JP (1) JP5655212B2 (de)
KR (1) KR101676078B1 (de)
CN (1) CN102834924A (de)
DE (1) DE102010027747A1 (de)
WO (1) WO2011128001A2 (de)

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DE102011000418A1 (de) * 2011-01-31 2012-08-02 Azur Space Solar Power Gmbh Photovoltaik-Baugruppe
DE102011088538A1 (de) * 2011-12-14 2013-06-20 Robert Bosch Gmbh Verfahren und Anordnung zur Herstellung oder Reparatur eines Solarmoduls
DE102011088476A1 (de) * 2011-12-14 2013-06-20 Robert Bosch Gmbh Solarmodul und Verfahren zur Herstellung eines solchen
JP5876379B2 (ja) * 2012-06-19 2016-03-02 本田技研工業株式会社 ガラス基板の穿孔方法および穿孔補助治具
JP2014067999A (ja) * 2012-09-04 2014-04-17 Toyo Aluminium Kk 太陽電池用リボン線及びそれを用いた太陽電池モジュール
DE102013205094A1 (de) 2013-03-22 2014-09-25 Robert Bosch Gmbh Solarmodul und Verfahren zur Herstellung eines solchen
CN104183666B (zh) * 2013-05-26 2017-06-16 苏州易益新能源科技有限公司 一种激光焊接联接晶体硅太阳能电池的方法
ITTV20130211A1 (it) * 2013-12-23 2015-06-24 Vismunda Srl "metodo d'assemblaggio di un pannello fotovoltaico di tipo back-contact con prefissaggio delle celle, e stazione combinata di carico e pre-fissaggio".
CN104753600A (zh) * 2013-12-31 2015-07-01 深圳新飞通光电子技术有限公司 一种金属封装的光收发模块
JP7337838B2 (ja) * 2018-11-13 2023-09-04 株式会社カネカ 太陽電池モジュールの製造方法
CN110148640A (zh) * 2019-05-30 2019-08-20 江苏欧达丰新能源科技发展有限公司 喷绘烧结制作光伏电池片栅线电极的方法
DE102019122213A1 (de) * 2019-08-19 2021-02-25 Heliatek Gmbh Verfahren zur elektrisch leitenden Kontaktierung eines mindestens eine Schutzschicht aufweisenden optoelektronischen Bauelements und optoelektronisches Bauelement mit einer solchen Kontaktierung
KR102554432B1 (ko) * 2021-05-12 2023-07-11 (주)선진환경 바이패스 핀이 접촉된 태양전지 모듈 및 이의 공정 방법
NL2028545B1 (en) * 2021-06-25 2023-01-02 Atlas Technologies Holding Bv Solar module with improved bonding
KR102639167B1 (ko) * 2021-12-02 2024-02-20 한화솔루션 주식회사 과솔더가 방지되는 태양전지 모듈 제조용 태빙 장치
CN115588716B (zh) 2022-11-24 2023-04-07 晶科能源(海宁)有限公司 光伏组件的制造方法和光伏组件

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Also Published As

Publication number Publication date
US20130104957A1 (en) 2013-05-02
KR101676078B1 (ko) 2016-11-14
WO2011128001A2 (de) 2011-10-20
DE102010027747A1 (de) 2011-10-20
CN102834924A (zh) 2012-12-19
JP5655212B2 (ja) 2015-01-21
EP2559058A2 (de) 2013-02-20
JP2013524543A (ja) 2013-06-17
KR20130059346A (ko) 2013-06-05

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