IL70639A - Method of fabricating solar cells - Google Patents
Method of fabricating solar cellsInfo
- Publication number
- IL70639A IL70639A IL70639A IL7063984A IL70639A IL 70639 A IL70639 A IL 70639A IL 70639 A IL70639 A IL 70639A IL 7063984 A IL7063984 A IL 7063984A IL 70639 A IL70639 A IL 70639A
- Authority
- IL
- Israel
- Prior art keywords
- solar cells
- fabricating solar
- fabricating
- cells
- solar
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/318—Inorganic layers composed of nitrides
- H01L21/3185—Inorganic layers composed of nitrides of siliconnitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/942—Masking
- Y10S438/948—Radiation resist
- Y10S438/95—Multilayer mask including nonradiation sensitive layer
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/456,621 US4451969A (en) | 1983-01-10 | 1983-01-10 | Method of fabricating solar cells |
Publications (2)
Publication Number | Publication Date |
---|---|
IL70639A0 IL70639A0 (en) | 1984-04-30 |
IL70639A true IL70639A (en) | 1988-11-30 |
Family
ID=23813498
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IL70639A IL70639A (en) | 1983-01-10 | 1984-01-08 | Method of fabricating solar cells |
Country Status (11)
Country | Link |
---|---|
US (1) | US4451969A (fr) |
EP (1) | EP0134232B1 (fr) |
JP (1) | JPS60500392A (fr) |
AU (1) | AU554909B2 (fr) |
CA (1) | CA1238480A (fr) |
DE (1) | DE3490007T1 (fr) |
GB (1) | GB2142777B (fr) |
IL (1) | IL70639A (fr) |
IN (1) | IN160262B (fr) |
NL (1) | NL8420012A (fr) |
WO (1) | WO1984002805A1 (fr) |
Families Citing this family (61)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58220477A (ja) * | 1982-06-16 | 1983-12-22 | Japan Solar Energ Kk | 太陽電池の製造方法 |
FR2579832B1 (fr) * | 1985-03-26 | 1987-11-06 | Centre Nat Etd Spatiales | Procede d'allegement de cellules solaires et cellules ainsi obtenues |
EP0218117A3 (fr) * | 1985-10-11 | 1989-11-23 | Allied Corporation | Polymères polycyclosilazanes et leur emploi comme film diélectrique dans la fabrication de circuits intégrés |
JPS632330A (ja) * | 1986-06-23 | 1988-01-07 | Fujitsu Ltd | 化学気相成長方法 |
US4770974A (en) * | 1986-09-18 | 1988-09-13 | International Business Machines Corporation | Microlithographic resist containing poly(1,1-dialkylsilazane) |
JPS6377052A (ja) * | 1986-09-18 | 1988-04-07 | インタ−ナショナル・ビジネス・マシ−ンズ・コ−ポレ−ション | レジスト組成物 |
US4769086A (en) * | 1987-01-13 | 1988-09-06 | Atlantic Richfield Company | Thin film solar cell with nickel back |
JPS63222075A (ja) * | 1987-03-10 | 1988-09-14 | 日本鋼管株式会社 | 高密度焼結体の製造方法 |
DE3790981B4 (de) * | 1987-07-07 | 2006-04-20 | Rwe Schott Solar Inc. (N.D.Ges.D. Staates Delaware), Billerica | Verfahren zum Herstellen einer Photovoltaik-Solarzelle |
US4751191A (en) * | 1987-07-08 | 1988-06-14 | Mobil Solar Energy Corporation | Method of fabricating solar cells with silicon nitride coating |
US4863755A (en) * | 1987-10-16 | 1989-09-05 | The Regents Of The University Of California | Plasma enhanced chemical vapor deposition of thin films of silicon nitride from cyclic organosilicon nitrogen precursors |
US5011567A (en) * | 1989-12-06 | 1991-04-30 | Mobil Solar Energy Corporation | Method of fabricating solar cells |
US5110369A (en) * | 1990-10-24 | 1992-05-05 | Mobil Solar Energy Corporation | Cable interconnections for solar cell modules |
US5151377A (en) * | 1991-03-07 | 1992-09-29 | Mobil Solar Energy Corporation | Method for forming contacts |
US5262273A (en) * | 1992-02-25 | 1993-11-16 | International Business Machines Corporation | Photosensitive reactive ion etch barrier |
US5215861A (en) * | 1992-03-17 | 1993-06-01 | International Business Machines Corporation | Thermographic reversible photoresist |
US5270151A (en) * | 1992-03-17 | 1993-12-14 | International Business Machines Corporation | Spin on oxygen reactive ion etch barrier |
JP2791525B2 (ja) * | 1992-04-16 | 1998-08-27 | 三菱電機株式会社 | 反射防止膜の選定方法およびその方法により選定された反射防止膜 |
US5270248A (en) * | 1992-08-07 | 1993-12-14 | Mobil Solar Energy Corporation | Method for forming diffusion junctions in solar cell substrates |
TW349185B (en) * | 1992-08-20 | 1999-01-01 | Sony Corp | A semiconductor device |
KR100276047B1 (ko) * | 1992-12-29 | 2000-12-15 | 이데이 노부유끼 | 레지스트패턴형성방법 및 박막형성방법 |
US5543333A (en) * | 1993-09-30 | 1996-08-06 | Siemens Solar Gmbh | Method for manufacturing a solar cell having combined metallization |
US5411897A (en) * | 1994-02-04 | 1995-05-02 | Mobil Solar Energy Corporation | Machine and method for applying solder paste to electronic devices such as solar cells |
US5478402A (en) * | 1994-02-17 | 1995-12-26 | Ase Americas, Inc. | Solar cell modules and method of making same |
US5476553A (en) * | 1994-02-18 | 1995-12-19 | Ase Americas, Inc. | Solar cell modules and method of making same |
JP2771472B2 (ja) * | 1994-05-16 | 1998-07-02 | 松下電器産業株式会社 | 半導体装置の製造方法 |
KR100416739B1 (ko) * | 1997-01-31 | 2004-05-17 | 삼성전자주식회사 | 실리콘 태양전지의 제조방법 |
JP3772456B2 (ja) * | 1997-04-23 | 2006-05-10 | 三菱電機株式会社 | 太陽電池及びその製造方法、半導体製造装置 |
US6121133A (en) | 1997-08-22 | 2000-09-19 | Micron Technology, Inc. | Isolation using an antireflective coating |
US6294459B1 (en) * | 1998-09-03 | 2001-09-25 | Micron Technology, Inc. | Anti-reflective coatings and methods for forming and using same |
US6444588B1 (en) * | 1999-04-26 | 2002-09-03 | Micron Technology, Inc. | Anti-reflective coatings and methods regarding same |
WO2003047005A2 (fr) * | 2001-11-26 | 2003-06-05 | Shell Solar Gmbh | Fabrication d'une pile solaire dotee de contacts arrieres |
CN1720614A (zh) * | 2002-12-03 | 2006-01-11 | 皇家飞利浦电子股份有限公司 | 制造显示器的方法 |
US7021735B2 (en) * | 2003-03-28 | 2006-04-04 | Lexmark International, Inc. | Reduction of color plane alignment error in a drum printer |
US7339110B1 (en) * | 2003-04-10 | 2008-03-04 | Sunpower Corporation | Solar cell and method of manufacture |
US7455787B2 (en) * | 2003-08-01 | 2008-11-25 | Sunpower Corporation | Etching of solar cell materials |
US8502064B2 (en) * | 2003-12-11 | 2013-08-06 | Philip Morris Usa Inc. | Hybrid system for generating power |
JP4401158B2 (ja) * | 2003-12-16 | 2010-01-20 | シャープ株式会社 | 太陽電池の製造方法 |
US7790060B2 (en) * | 2005-08-11 | 2010-09-07 | Wintek Electro Optics Corporation | SiOx:Si composite material compositions and methods of making same |
US7749406B2 (en) * | 2005-08-11 | 2010-07-06 | Stevenson David E | SiOx:Si sputtering targets and method of making and using such targets |
US7658822B2 (en) * | 2005-08-11 | 2010-02-09 | Wintek Electro-Optics Corporation | SiOx:Si composite articles and methods of making same |
JP4950800B2 (ja) * | 2006-08-25 | 2012-06-13 | 株式会社東芝 | 半導体装置の製造方法 |
NL2000999C2 (nl) * | 2007-11-13 | 2009-05-14 | Stichting Energie | Werkwijze voor het fabriceren van kristallijn silicium zonnecellen met gebruikmaking van co-diffusie van boor en fosfor. |
CN102017187B (zh) * | 2008-04-30 | 2012-10-10 | 三菱电机株式会社 | 光电动势装置及其制造方法 |
EP2141750B1 (fr) * | 2008-07-02 | 2013-10-16 | Rohm and Haas Electronic Materials LLC | Procédé de placage induit par la lumière sur des semi-conducteurs |
TWI389322B (zh) * | 2008-09-16 | 2013-03-11 | Gintech Energy Corp | 具有差異性摻雜之太陽能電池的製造方法 |
US20100075261A1 (en) * | 2008-09-22 | 2010-03-25 | International Business Machines Corporation | Methods for Manufacturing a Contact Grid on a Photovoltaic Cell |
FR2946459B1 (fr) * | 2009-06-05 | 2011-08-05 | Centre Nat Etd Spatiales | Element de structure pour panneau solaire, et structure comportant un tel element |
TWI396771B (zh) * | 2009-08-25 | 2013-05-21 | 羅門哈斯電子材料有限公司 | 形成矽化鎳之強化方法 |
JP5410207B2 (ja) | 2009-09-04 | 2014-02-05 | AzエレクトロニックマテリアルズIp株式会社 | シリカ質膜製造方法およびそれに用いるポリシラザン塗膜処理液 |
US8574950B2 (en) * | 2009-10-30 | 2013-11-05 | International Business Machines Corporation | Electrically contactable grids manufacture |
US8980677B2 (en) * | 2009-12-02 | 2015-03-17 | University Of South Florida | Transparent contacts organic solar panel by spray |
US8445309B2 (en) | 2010-08-20 | 2013-05-21 | First Solar, Inc. | Anti-reflective photovoltaic module |
CA2763142A1 (fr) * | 2010-09-03 | 2012-03-03 | Tetrasun, Inc. | Metallisation de dispositifs photovoltaiques en couches minces par decollement partiel de revetements optiques |
US8969122B2 (en) * | 2011-06-14 | 2015-03-03 | International Business Machines Corporation | Processes for uniform metal semiconductor alloy formation for front side contact metallization and photovoltaic device formed therefrom |
DE102011057172A1 (de) * | 2011-12-29 | 2013-07-04 | Gp Solar Gmbh | Verfahren und Vorrichtung zur Herstellung einer Beschichtung auf einem Halbleiterbauelement |
US8916954B2 (en) * | 2012-02-05 | 2014-12-23 | Gtat Corporation | Multi-layer metal support |
US8841161B2 (en) | 2012-02-05 | 2014-09-23 | GTAT.Corporation | Method for forming flexible solar cells |
US8785294B2 (en) | 2012-07-26 | 2014-07-22 | Gtat Corporation | Silicon carbide lamina |
US9153712B2 (en) * | 2012-09-27 | 2015-10-06 | Sunpower Corporation | Conductive contact for solar cell |
US9673341B2 (en) | 2015-05-08 | 2017-06-06 | Tetrasun, Inc. | Photovoltaic devices with fine-line metallization and methods for manufacture |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3549411A (en) * | 1967-06-27 | 1970-12-22 | Texas Instruments Inc | Method of preparing silicon nitride films |
JPS51135366A (en) * | 1975-05-19 | 1976-11-24 | Matsushita Electronics Corp | Method of forming electrode film on silicon semiconductor device |
US4347264A (en) * | 1975-09-18 | 1982-08-31 | Solarex Corporation | Method of applying contacts to a silicon wafer and product formed thereby |
JPS5384585A (en) * | 1976-12-29 | 1978-07-26 | Hamasawa Kogyo:Kk | Solar cell |
US4158717A (en) * | 1977-02-14 | 1979-06-19 | Varian Associates, Inc. | Silicon nitride film and method of deposition |
US4152824A (en) * | 1977-12-30 | 1979-05-08 | Mobil Tyco Solar Energy Corporation | Manufacture of solar cells |
US4200666A (en) * | 1978-08-02 | 1980-04-29 | Texas Instruments Incorporated | Single component monomer for silicon nitride deposition |
US4268711A (en) * | 1979-04-26 | 1981-05-19 | Optical Coating Laboratory, Inc. | Method and apparatus for forming films from vapors using a contained plasma source |
US4266985A (en) * | 1979-05-18 | 1981-05-12 | Fujitsu Limited | Process for producing a semiconductor device including an ion implantation step in combination with direct thermal nitridation of the silicon substrate |
US4321283A (en) * | 1979-10-26 | 1982-03-23 | Mobil Tyco Solar Energy Corporation | Nickel plating method |
US4359487A (en) * | 1980-07-11 | 1982-11-16 | Exxon Research And Engineering Co. | Method for applying an anti-reflection coating to a solar cell |
US4347262A (en) * | 1980-11-26 | 1982-08-31 | E. I. Du Pont De Nemours And Company | Aluminum-magnesium alloys in low resistance contacts to silicon |
JPS57124477A (en) * | 1981-01-26 | 1982-08-03 | Toshiba Corp | Manufacture of semiconductor device |
JPS57199270A (en) * | 1981-06-02 | 1982-12-07 | Semiconductor Energy Lab Co Ltd | Photoelectric converter |
-
1983
- 1983-01-10 US US06/456,621 patent/US4451969A/en not_active Expired - Fee Related
-
1984
- 1984-01-06 AU AU24901/84A patent/AU554909B2/en not_active Ceased
- 1984-01-06 WO PCT/US1984/000012 patent/WO1984002805A1/fr active IP Right Grant
- 1984-01-06 JP JP59500705A patent/JPS60500392A/ja active Granted
- 1984-01-06 NL NL8420012A patent/NL8420012A/nl unknown
- 1984-01-06 GB GB08416965A patent/GB2142777B/en not_active Expired
- 1984-01-06 DE DE19843490007 patent/DE3490007T1/de active Granted
- 1984-01-06 EP EP84900663A patent/EP0134232B1/fr not_active Expired - Lifetime
- 1984-01-08 IL IL70639A patent/IL70639A/xx not_active IP Right Cessation
- 1984-01-09 IN IN31/DEL/84A patent/IN160262B/en unknown
- 1984-01-09 CA CA000444966A patent/CA1238480A/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
IN160262B (fr) | 1987-07-04 |
DE3490007T1 (de) | 1985-01-24 |
AU554909B2 (en) | 1986-09-04 |
NL8420012A (nl) | 1984-11-01 |
EP0134232B1 (fr) | 1992-06-10 |
DE3490007C2 (fr) | 1990-11-29 |
US4451969A (en) | 1984-06-05 |
WO1984002805A1 (fr) | 1984-07-19 |
GB2142777B (en) | 1986-07-02 |
EP0134232A4 (fr) | 1989-01-19 |
GB2142777A (en) | 1985-01-23 |
IL70639A0 (en) | 1984-04-30 |
JPH057872B2 (fr) | 1993-01-29 |
GB8416965D0 (en) | 1984-08-08 |
EP0134232A1 (fr) | 1985-03-20 |
JPS60500392A (ja) | 1985-03-22 |
CA1238480A (fr) | 1988-06-28 |
AU2490184A (en) | 1984-08-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
HC | Change of name of proprietor(s) | ||
RH | Patent void |