IL70639A - Method of fabricating solar cells - Google Patents

Method of fabricating solar cells

Info

Publication number
IL70639A
IL70639A IL70639A IL7063984A IL70639A IL 70639 A IL70639 A IL 70639A IL 70639 A IL70639 A IL 70639A IL 7063984 A IL7063984 A IL 7063984A IL 70639 A IL70639 A IL 70639A
Authority
IL
Israel
Prior art keywords
solar cells
fabricating solar
fabricating
cells
solar
Prior art date
Application number
IL70639A
Other languages
English (en)
Other versions
IL70639A0 (en
Original Assignee
Mobil Solar Energy Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mobil Solar Energy Corp filed Critical Mobil Solar Energy Corp
Publication of IL70639A0 publication Critical patent/IL70639A0/xx
Publication of IL70639A publication Critical patent/IL70639A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1868—Passivation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/318—Inorganic layers composed of nitrides
    • H01L21/3185—Inorganic layers composed of nitrides of siliconnitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist
    • Y10S438/95—Multilayer mask including nonradiation sensitive layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)
IL70639A 1983-01-10 1984-01-08 Method of fabricating solar cells IL70639A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/456,621 US4451969A (en) 1983-01-10 1983-01-10 Method of fabricating solar cells

Publications (2)

Publication Number Publication Date
IL70639A0 IL70639A0 (en) 1984-04-30
IL70639A true IL70639A (en) 1988-11-30

Family

ID=23813498

Family Applications (1)

Application Number Title Priority Date Filing Date
IL70639A IL70639A (en) 1983-01-10 1984-01-08 Method of fabricating solar cells

Country Status (11)

Country Link
US (1) US4451969A (xx)
EP (1) EP0134232B1 (xx)
JP (1) JPS60500392A (xx)
AU (1) AU554909B2 (xx)
CA (1) CA1238480A (xx)
DE (1) DE3490007T1 (xx)
GB (1) GB2142777B (xx)
IL (1) IL70639A (xx)
IN (1) IN160262B (xx)
NL (1) NL8420012A (xx)
WO (1) WO1984002805A1 (xx)

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FR2579832B1 (fr) * 1985-03-26 1987-11-06 Centre Nat Etd Spatiales Procede d'allegement de cellules solaires et cellules ainsi obtenues
EP0218117A3 (en) * 1985-10-11 1989-11-23 Allied Corporation Cyclosilazane polymers as dielectric films in integrated circuit fabrication technology
JPS632330A (ja) * 1986-06-23 1988-01-07 Fujitsu Ltd 化学気相成長方法
US4770974A (en) * 1986-09-18 1988-09-13 International Business Machines Corporation Microlithographic resist containing poly(1,1-dialkylsilazane)
JPS6377052A (ja) * 1986-09-18 1988-04-07 インタ−ナショナル・ビジネス・マシ−ンズ・コ−ポレ−ション レジスト組成物
US4769086A (en) * 1987-01-13 1988-09-06 Atlantic Richfield Company Thin film solar cell with nickel back
JPS63222075A (ja) * 1987-03-10 1988-09-14 日本鋼管株式会社 高密度焼結体の製造方法
WO1989000341A1 (en) * 1987-07-07 1989-01-12 Mobil Solar Energy Corporation Method of fabricating solar cells with anti-reflection coating
US4751191A (en) * 1987-07-08 1988-06-14 Mobil Solar Energy Corporation Method of fabricating solar cells with silicon nitride coating
US4863755A (en) * 1987-10-16 1989-09-05 The Regents Of The University Of California Plasma enhanced chemical vapor deposition of thin films of silicon nitride from cyclic organosilicon nitrogen precursors
US5011567A (en) * 1989-12-06 1991-04-30 Mobil Solar Energy Corporation Method of fabricating solar cells
US5110369A (en) * 1990-10-24 1992-05-05 Mobil Solar Energy Corporation Cable interconnections for solar cell modules
US5151377A (en) * 1991-03-07 1992-09-29 Mobil Solar Energy Corporation Method for forming contacts
US5262273A (en) * 1992-02-25 1993-11-16 International Business Machines Corporation Photosensitive reactive ion etch barrier
US5270151A (en) * 1992-03-17 1993-12-14 International Business Machines Corporation Spin on oxygen reactive ion etch barrier
US5215861A (en) * 1992-03-17 1993-06-01 International Business Machines Corporation Thermographic reversible photoresist
JP2791525B2 (ja) * 1992-04-16 1998-08-27 三菱電機株式会社 反射防止膜の選定方法およびその方法により選定された反射防止膜
US5270248A (en) * 1992-08-07 1993-12-14 Mobil Solar Energy Corporation Method for forming diffusion junctions in solar cell substrates
TW349185B (en) * 1992-08-20 1999-01-01 Sony Corp A semiconductor device
KR100276047B1 (ko) * 1992-12-29 2000-12-15 이데이 노부유끼 레지스트패턴형성방법 및 박막형성방법
US5543333A (en) * 1993-09-30 1996-08-06 Siemens Solar Gmbh Method for manufacturing a solar cell having combined metallization
US5411897A (en) * 1994-02-04 1995-05-02 Mobil Solar Energy Corporation Machine and method for applying solder paste to electronic devices such as solar cells
US5478402A (en) * 1994-02-17 1995-12-26 Ase Americas, Inc. Solar cell modules and method of making same
US5476553A (en) * 1994-02-18 1995-12-19 Ase Americas, Inc. Solar cell modules and method of making same
JP2771472B2 (ja) 1994-05-16 1998-07-02 松下電器産業株式会社 半導体装置の製造方法
KR100416739B1 (ko) * 1997-01-31 2004-05-17 삼성전자주식회사 실리콘 태양전지의 제조방법
JP3772456B2 (ja) * 1997-04-23 2006-05-10 三菱電機株式会社 太陽電池及びその製造方法、半導体製造装置
US6121133A (en) 1997-08-22 2000-09-19 Micron Technology, Inc. Isolation using an antireflective coating
US6294459B1 (en) 1998-09-03 2001-09-25 Micron Technology, Inc. Anti-reflective coatings and methods for forming and using same
US6444588B1 (en) * 1999-04-26 2002-09-03 Micron Technology, Inc. Anti-reflective coatings and methods regarding same
CN100401532C (zh) * 2001-11-26 2008-07-09 壳牌阳光有限公司 太阳能电池及其制造方法
US20060054594A1 (en) * 2002-12-03 2006-03-16 Herbert Lifka Method for the manufacture of a display
US7021735B2 (en) * 2003-03-28 2006-04-04 Lexmark International, Inc. Reduction of color plane alignment error in a drum printer
US7339110B1 (en) * 2003-04-10 2008-03-04 Sunpower Corporation Solar cell and method of manufacture
US7455787B2 (en) * 2003-08-01 2008-11-25 Sunpower Corporation Etching of solar cell materials
US8502064B2 (en) * 2003-12-11 2013-08-06 Philip Morris Usa Inc. Hybrid system for generating power
JP4401158B2 (ja) * 2003-12-16 2010-01-20 シャープ株式会社 太陽電池の製造方法
US7749406B2 (en) * 2005-08-11 2010-07-06 Stevenson David E SiOx:Si sputtering targets and method of making and using such targets
US7790060B2 (en) * 2005-08-11 2010-09-07 Wintek Electro Optics Corporation SiOx:Si composite material compositions and methods of making same
US7658822B2 (en) * 2005-08-11 2010-02-09 Wintek Electro-Optics Corporation SiOx:Si composite articles and methods of making same
JP4950800B2 (ja) * 2006-08-25 2012-06-13 株式会社東芝 半導体装置の製造方法
NL2000999C2 (nl) * 2007-11-13 2009-05-14 Stichting Energie Werkwijze voor het fabriceren van kristallijn silicium zonnecellen met gebruikmaking van co-diffusie van boor en fosfor.
JPWO2009133607A1 (ja) * 2008-04-30 2011-08-25 三菱電機株式会社 光起電力装置の製造方法
EP2141750B1 (en) * 2008-07-02 2013-10-16 Rohm and Haas Electronic Materials LLC Method of light induced plating on semiconductors
TWI389322B (zh) * 2008-09-16 2013-03-11 Gintech Energy Corp 具有差異性摻雜之太陽能電池的製造方法
US20100075261A1 (en) * 2008-09-22 2010-03-25 International Business Machines Corporation Methods for Manufacturing a Contact Grid on a Photovoltaic Cell
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JP5631113B2 (ja) * 2009-08-25 2014-11-26 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． ケイ化ニッケルの向上した形成方法
JP5410207B2 (ja) 2009-09-04 2014-02-05 ＡｚエレクトロニックマテリアルズＩｐ株式会社 シリカ質膜製造方法およびそれに用いるポリシラザン塗膜処理液
US8574950B2 (en) * 2009-10-30 2013-11-05 International Business Machines Corporation Electrically contactable grids manufacture
US8980677B2 (en) * 2009-12-02 2015-03-17 University Of South Florida Transparent contacts organic solar panel by spray
US8445309B2 (en) 2010-08-20 2013-05-21 First Solar, Inc. Anti-reflective photovoltaic module
CN102576767B (zh) * 2010-09-03 2016-02-10 泰特拉桑有限公司 将金属栅格触点图案和介电图案形成到需要导电触点的太阳能电池层上的方法
US8969122B2 (en) * 2011-06-14 2015-03-03 International Business Machines Corporation Processes for uniform metal semiconductor alloy formation for front side contact metallization and photovoltaic device formed therefrom
DE102011057172A1 (de) * 2011-12-29 2013-07-04 Gp Solar Gmbh Verfahren und Vorrichtung zur Herstellung einer Beschichtung auf einem Halbleiterbauelement
US8916954B2 (en) * 2012-02-05 2014-12-23 Gtat Corporation Multi-layer metal support
US8841161B2 (en) 2012-02-05 2014-09-23 GTAT.Corporation Method for forming flexible solar cells
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Also Published As

Publication number Publication date
CA1238480A (en) 1988-06-28
EP0134232A1 (en) 1985-03-20
WO1984002805A1 (en) 1984-07-19
AU554909B2 (en) 1986-09-04
EP0134232B1 (en) 1992-06-10
US4451969A (en) 1984-06-05
DE3490007T1 (de) 1985-01-24
JPH057872B2 (xx) 1993-01-29
DE3490007C2 (xx) 1990-11-29
NL8420012A (nl) 1984-11-01
EP0134232A4 (en) 1989-01-19
IL70639A0 (en) 1984-04-30
GB8416965D0 (en) 1984-08-08
GB2142777A (en) 1985-01-23
JPS60500392A (ja) 1985-03-22
IN160262B (xx) 1987-07-04
GB2142777B (en) 1986-07-02
AU2490184A (en) 1984-08-02

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